The Development and Qualification of a DC-DC Converter for 225°C (437°F) Operating Temperature

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000214-000221
Author(s):  
Bob Hunt
Keyword(s):  
High Temperature ◽  
Operating Temperature ◽  
Reliable Operation ◽  
Packaging Technology ◽  
High Temperature Electronic

This paper presents the development and qualification of high temperature electronic module packaging technology to service the requirements for extended and reliable operation at 225°C (437°F) for applications in the Oil & Gas, Automotive and Aerospace markets. It also covers the application of this technology to the first in a range of DC-DC converter modules and is based on Cissoid's ‘ETNA’ semiconductor components.

Generating Innovative Solid Polymer Electrolyte Based on Melanin and Without Binder for High Energy Li Batteries

2021 ◽  
Vol 105 (1) ◽  
pp. 29-34
Author(s):  
Elena Shembel ◽  
Yuliya Polishchuk ◽  
Volodymyr Kyrychenko ◽  
Volodymyr Redko ◽  
Boris A Blyuss ◽  
...  
Keyword(s):  
High Temperature ◽  
Polymer Electrolyte ◽  
Chemical Stability ◽  
Solid Polymer Electrolyte ◽  
Operating Temperature ◽  
High Energy ◽  
Solid Polymer ◽  
Special Design ◽  
Li Batteries ◽  
Wide Operating

The goal of this investigation is connected with wishes to use the melanin for formulating the solid polymer electrolyte without the binder for Li batteries. Nature and properties of solid polymer electrolyte of the Li batteries is an important factor for ensuring the properties of Li batteries. For successful optimization the properties of Li batteries the following list includes the important requirements for the polymer electrolyte: high conductivity in wide operating temperature, chemical stability and no ignition at under high temperature - even more than 1000C, low impedance of interface between electrode and solid polymer electrolyte, special design of system - the solid polymer electrolyte in porous structure of electrode. For developing the solid polymer electrolyte without the binder we fulfill this goal includes the melanin in the solid polymer electrolyte.

Effects of Thermal Exposure on Microstructure and Mechanical Properties of Ni Based Superalloy GTD111

2011 ◽  
Vol 275 ◽  
pp. 31-34 ◽  
Author(s):  
Han Sang Lee ◽  
Keun Bong Yoo ◽  
Doo Soo Kim ◽  
Jae Hoon Kim
Keyword(s):  
High Temperature ◽  
Gas Turbine ◽  
Operating Temperature ◽  
Rupture Strength ◽  
Mechanical Test ◽  
Thermal Exposure ◽  
Creep Rupture Strength ◽  
Material Degradation ◽  
Temperature Dependent ◽  
Hot Gas

The rotating components in the hot sections of land-based gas turbine are exposed to severe environment during several ten thousand hours at above 1100 oC operating temperature. The failure mechanism of the hot gas components would be accompanied by material degradation in the properties of high temperature and creep rupture strength. Many hot gas components in gas turbine are made of Ni-based superalloy because of their high temperature performance. In this work, we surveyed the time and temperature dependent degradation of Ni-based superalloy. We prepared the specimens from GTD111 that are exposed at 871 oC and 982 oC in 1,000 ~ 10,000 hours. We carried out the mechanical test and microstructural observation.

Development of an SiC Multichip Phase-Leg Module for High-Temperature and High-Frequency Applications

2016 ◽  
Vol 13 (2) ◽  
pp. 39-50 ◽  
Author(s):  
Zheng Chen ◽  
Yiying Yao ◽  
Wenli Zhang ◽  
Dushan Boroyevich ◽  
Khai Ngo ◽  
...  
Keyword(s):  
High Temperature ◽  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Operating Temperature ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Packaging Materials ◽  
Temperature Capability ◽  
Effect Transistor

This article presents a 1,200-V, 120-A silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET) phase-leg module capable of operating at 200°C ambient temperature. Paralleling six 20-A MOSFET bare dice for each switch, this module outperforms the commercial SiC modules in higher operating temperature and lower package parasitics at a comparable power rating. The module's high-temperature capability is validated through the extensive characterizations of the SiC MOSFET, as well as the careful selections of suitable packaging materials. Particularly, the sealed-step-edge technology is implemented on the direct-bonded-copper substrates to improve the module's thermal cycling lifetime. Though still based on the regular wire-bond structure, the module is able to achieve over 40% reduction in the switching loop inductance compared with a commercial SiC module by optimizing its internal layout. By further embedding decoupling capacitors directly on the substrates, the module also allows SiC MOSFETs to be switched twice faster with only one-third turn-off overvoltages compared with the commercial module.

Solid Electrolytic Capacitors Designed for High Temperature Applications

2015 ◽  
Vol 2015 (HiTEN) ◽  
pp. 000142-000152 ◽  
Author(s):  
Randy Hahn ◽  
Kristin Tempel
Keyword(s):  
High Temperature ◽  
Operating Temperature ◽  
Tantalum Pentoxide ◽  
Passive Component ◽  
Surface Mount ◽  
Electrolytic Capacitors ◽  
Developed Surface ◽  
Design And Manufacturing ◽  
Materials Used ◽  
Temperature Applications

For decades the maximum recommended operating temperature of solid electrolytic capacitors was 125°C. Responding to needs in the automotive and downhole drilling industries passive component manufacturers developed surface mount tantalum capacitors rated at 150°C in 2002–2003. Since that time the industry has introduced high temperature capable tantalum capacitors generally in 25°C increments roughly every four years. Today multiple manufacturers have products rated at 230°C poised for market release. The tantalum anode, tantalum pentoxide dielectric and manganese dioxide primary cathode material stand up well to these temperatures, although some optimization of the design and manufacturing process for these materials have been required. The primary challenges encountered when developing solid electrolytic capacitors with high temperature capabilities are associated with the carbon, silver and epoxy encapsulant materials used in conventional surface mount tantalum capacitors. Capacitor manufacturers have taken different paths to overcome these challenges. We have developed a metallized plating process to avoid issues associated with silver paints utilized in conventional Ta capacitors. We have worked with suppliers, or developed in house capabilities, to manufacture the other materials required to withstand the rigors of high temperature applications. This paper will discuss these challenges and provide reliability test data on a recently developed tantalum surface mount series capable of continuous operation at 230°C.

A Resistive GaN-HEMT Mixer for a Cable Modem Operable up to 250°C for Downhole Communications

2017 ◽  
Vol 14 (1) ◽  
pp. 17-25 ◽  
Author(s):  
Jebreel M. Salem ◽  
Dong Sam Ha
Keyword(s):  
High Temperature ◽  
Oil And Gas ◽  
High Electron Mobility Transistor ◽  
Oil And Gas Industry ◽  
Intermediate Frequency ◽  
Local Oscillator ◽  
Heat Extraction ◽  
High Electron ◽  
Reliable Operation ◽  
Ambient Temperatures

It is necessary for the oil and gas industry to drill deeper due to decrease of easily accessible natural reserves. Temperatures of deep wells can exceed 210°C, and conventional cooling and heat extraction techniques are impractical in such a harsh environment. Reliable electronic designs that can sustain high temperature become necessary. This article presents a high-temperature passive radio frequency (RF) mixer for downhole communications. The proposed mixer is designed to upconvert or downconvert the incoming signal with low conversion loss (CL), high linearity, and reliable operation at the ambient temperature up to 250°C. GaN is a wide-bandgap technology that can provide a reliable operation at high ambient temperatures, and the proposed mixer adopts a commercial GaN high-electron-mobility transistor. Measurement results indicate that the proposed mixer achieves a CL of 7.1 dB at local oscillator (LO) power of 2.5 dBm for the downconversion from 230–253 to 97.5 MHz at 250°C and the input P1dB compression point lies at 5 dBm. The designed mixer also achieves 24.5 dB RF-to-intermediate frequency (IF) isolation and 28 dB LO-to-IF isolation at 250°C. The power dissipation of the mixer is virtually zero.

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