Design of 1 V bandgap reference without native MOS transistor in 0.18 µm CMOS technology

2012 ◽  
Author(s):  
P. Arivazhagan ◽  
T. K. Bhattacharyya
Keyword(s):  
Cmos Technology ◽  
Bandgap Reference ◽  
Mos Transistor

A 0.55 V Bandgap Reference with a 59 ppm/°C Temperature Coefficient

2019 ◽  
Vol 28 (07) ◽  
pp. 1950120 ◽  
Author(s):  
R. Nagulapalli ◽  
K. Hayatleh ◽  
S. Barker ◽  
A. A. Tammam ◽  
P. Georgiou ◽  
...  
Keyword(s):  
Temperature Coefficient ◽  
Low Voltage ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Absolute Temperature ◽  
Threshold Region ◽  
Bandgap Reference ◽  
Na Current ◽  
Mos Transistor ◽  
Self Bias

This paper presents a novel low power, low voltage CMOS bandgap reference (BGR) that overcomes the problems with the existing BJT-based reference circuits by using a MOS transistor operating in sub-threshold region. A proportional to absolute temperature (PTAT) voltage is generated by exploiting the self-bias cascode branch, while a Complementary to Absolute Temperature (CTAT) voltage is generated by using the threshold voltage of the transistor. The proposed circuit is implemented in 65[Formula: see text]nm CMOS technology. Post-layout simulation results show that the proposed circuit works with a supply voltage of 0.55[Formula: see text]V, and generates a 286[Formula: see text]mV reference voltage with a temperature coefficient of 59[Formula: see text]ppm/∘C. The circuit takes 413[Formula: see text]nA current from 0.55[Formula: see text]V supply and occupies 0.00986[Formula: see text]mm2 of active area.

Effective Circuit Design Methodologies for Standby Leakage Power Reduction

2020 ◽  
Vol 12 (2) ◽  
pp. 168-172
Author(s):  
Manish Kumar ◽  
Md. Anwar Hussain ◽  
Sajal K. Paul
Keyword(s):  
Circuit Design ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Logic Circuits ◽  
Power Reduction ◽  
Leakage Power ◽  
Model Parameters ◽  
Mos Transistor ◽  
Design Methodologies ◽  
Transistor Model

This paper presents circuit level design methodologies for significantly reducing the standby leakage power. Layout of different CMOS logic circuits such as a 2-input XOR, a 2-input XNOR, and a 4-input XNOR are designed and simulated by using BSIM4 MOS transistor model parameters. Layout simulations are done at a supply voltage of 0.4 V in 45 nm CMOS technology. Logic circuits designed by using the proposed circuit design methodologies proved to be effective in minimizing the standby leakage power. All layout design and simulation of the circuits are carried out by using Microwind EDA software (version 3.1).

scholarly journals A Radiation Hard Bandgap Reference Circuit in a Standard 0.13 $\mu$m CMOS Technology

2007 ◽  
Vol 54 (6) ◽  
pp. 2727-2733 ◽  
Author(s):  
Vladimir Gromov ◽  
Anne Johan Annema ◽  
Ruud Kluit ◽  
Jan Lammert Visschers ◽  
P. Timmer
Keyword(s):  
Cmos Technology ◽  
Bandgap Reference ◽  
Reference Circuit ◽  
Radiation Hard

A High-Order Curvature-Compensated Bandgap Voltage Reference for Micro-Gyroscope

2012 ◽  
Vol 503 ◽  
pp. 12-17
Author(s):  
Qiang Li ◽  
Xiao Yun Tan ◽  
Guan Shi Wang
Keyword(s):  
Power Supply ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Bandgap Reference ◽  
Voltage Reference ◽  
Temperature Dependent ◽  
Power Supply Voltage ◽  
Gyroscope System ◽  
Bandgap Voltage Reference ◽  
Reference Circuit

The reference is an important part of the micro-gyroscope system. The precision and stability of the reference directly affect the precision of the micro-gyroscope. Unlike the traditional bandgap reference circuit, a circuit using a temperature-dependent resistor ratio generated by a highly-resistive poly resistor and a diffusion resistor in CMOS technology is proposed in this paper. The complexity of the circuit is greatly reduced. Implemented with the standard 0.5μm CMOS technology and 9V power supply voltage, in the range of -40~120°C, the temperature coefficient of the proposed bandgap voltage reference can achieve to about 1.6 ppm/°C. The PSRR of the circuit is -107dB.

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