On high noise immunity CMOS design scheme with low leakage power consumption

Author(s):  
M. Abbas ◽  
M. Ikeda ◽  
K. Asada
2020 ◽  
Vol 12 ◽  
Author(s):  
Deepika Bansal ◽  
Bal Chand Nagar ◽  
Ajay Kumar ◽  
Brahamdeo Prasad Singh

Objective: A new efficient keeper circuit has been proposed in this article for achieving low leakage power consumption and to improve power delay product of the dynamic logic using carbon nanotube MOSFET. Method: As a benchmark, an one-bit adder has been designed and characterized with both technologies Si-MOSFET and CN-MOSFET using proposed and existing dynamic circuits. Furthermore, a comparison has been made to demonstrate the superiority of CN-MOSFET technology with Synopsys HSPICE tool for multiple bit adders available in the literature. Result: The simulation results show that the proposed keeper circuit provides lower static and dynamic power consumption up to 57 and 40% respectively, as compared to the domino circuits using 32nm CN-MOSFET technology provided by Stanford University. Moreover, the proposed keeper configuration provides better performance using SiMOSFET and CN-MOSFET technologies. Conclusion: A comparison of the proposed keeper with previously published designs is also given in terms of power consumption, delay and power delay product with the improvement up to 75, 18 and 50% respectively. The proposed circuit uses only two transistors, so it requires less area and gives high efficiency.


Author(s):  
Mr. Sagar Kothawade

FPGA based controlled devices are widely used in integrated chip sector provided the power consumed by such devices should be low. Leakage power takes vital part in contributing towards the total power consumption. This research work concentrates in proposing a power gating technique based on look up table approach. The novelty of this approach is that common look up tables are employed for asynchronous architectures for each leaf node. Due to this the leakage power and the total area overhead can be minimized. The proposed architecture is simulated through M-Power analysis and simulator tool for leaf nodes and efficiently utilizes H-tree methodology to minimize area. The reduction in number of look up tables leads to 45% to 50% reduction in leakage power of FPGA device.


Circuit World ◽  
2018 ◽  
Vol 44 (2) ◽  
pp. 87-98
Author(s):  
Amit Kumar Pandey ◽  
Tarun Kumar Gupta ◽  
Pawan Kumar Verma

Purpose This paper aims to propose a new sleep signal controlled footless domino circuit for reducing the subthreshold and gate oxide leakage currents. Design/methodology/approach In the proposed circuit, a P channel MOSFET (PMOS) sleep switch transistor is inserted between the power supply and the output node. The sleep transistor, the source of the pull-down network, and the source of the N channel MOSFET (NMOS) transistor of the output inverter are controlled by this additional sleep signal to place the footless domino circuit in a low leakage state. Findings The authors simulate the proposed circuit by using HSPICE in 45-nm CMOS technology for OR and AND logic gates such as OR2, OR4, OR8, AND2 and AND4 at 25°C and 110°C. The proposed circuit reduces leakage power consumption as compared to the existing circuits. Originality/value The proposed circuit significantly reduces the total leakage power consumption up to 99.41 and 99.51 per cent as compared to the standard dual-threshold voltage footless domino circuits at 25°C and 110°C, respectively, and up to 93.79 and 97.98 per cent as compared to the sleep control techniques at 25°C and 110°C, respectively. Similarly, the proposed circuit reduces the active power consumption up to 26.76 and 86.25 per cent as compared to the standard dual-threshold voltage and sleep control techniques footless domino circuits at 25°C and 110°C, respectively.


2015 ◽  
Vol 24 (05) ◽  
pp. 1550073 ◽  
Author(s):  
Vikas Mahor ◽  
Manisha Pattanaik

Wide fan-in dynamic logic OR gate has always been an integral part of high speed microprocessors. However, low noise immunity of wide fan-in dynamic logic gate is always an issue of concern. For maintaining high noise immunity, various large sized PMOS keeper-based dynamic OR gates are proposed in the literature. These designs allow large leakage through them for maintaining high noise immunity which unnecessarily increases the power dissipation. This can be a critical issue for microprocessors used in battery operated devices. Independent gate (IG) FinFET devices are known to reduce leakage current through them using back gate biasing technique. In this paper, a novel FinFET-based wide fan-in dynamic OR gate has been proposed with effective leakage control and high noise immunity. This work reports a maximum leakage power reduction up to 70% while maintaining up to 90% higher noise immunity as compared to standard dynamic OR gate at low keeper size. This work also mathematically illustrates the effective leakage reduction capability of FinFET as compared to CMOS and hence proves its preference over CMOS in wide fan-in dynamic OR gate.


Author(s):  
A. V. Mazin ◽  
M. Yu. Aliyev

The article investigates the problem of providing high noise immunity radar under the influence of passive and intentional interference. The purpose of radio operation of the radar is to create conditions that would impede the operation of systems and minimize its effectiveness. The main method of radio transmission is still creating (staging) interference. Modern radar systems must solve the tasks in terms of electronic suppression using, including intentional interference and under severe time constraints. It is shown that the most effective way to improve the noise immunity of radar systems designed to operate in multipoint space, including non-stationary, interference is adaptive space-time processing of the received signals, based on the angular selection of targets, due to the formation of zeros in the directional diagram in the direction of interference sources. This problem is solved by determining the accuracy of the direction finding of interference sources and is achieved by the joint operation of the antenna array and multi-channel signal processing devices, namely the separation of interference signals on different receiving channels.


2020 ◽  
Vol 11 (1) ◽  
pp. 129
Author(s):  
Po-Yu Kuo ◽  
Ming-Hwa Sheu ◽  
Chang-Ming Tsai ◽  
Ming-Yan Tsai ◽  
Jin-Fa Lin

The conventional shift register consists of master and slave (MS) latches with each latch receiving the data from the previous stage. Therefore, the same data are stored in two latches separately. It leads to consuming more electrical power and occupying more layout area, which is not satisfactory to most circuit designers. To solve this issue, a novel cross-latch shift register (CLSR) scheme is proposed. It significantly reduced the number of transistors needed for a 256-bit shifter register by 48.33% as compared with the conventional MS latch design. To further verify its functions, this CLSR was implemented by using TSMC 40 nm CMOS process standard technology. The simulation results reveal that the proposed CLSR reduced the average power consumption by 36%, cut the leakage power by 60.53%, and eliminated layout area by 34.76% at a supply voltage of 0.9 V with an operating frequency of 250 MHz, as compared with the MS latch.


2018 ◽  
Vol 15 (6) ◽  
pp. 792-803
Author(s):  
Sudhakar Jyothula

PurposeThe purpose of this paper is to design a low power clock gating technique using Galeor approach by assimilated with replica path pulse triggered flip flop (RP-PTFF).Design/methodology/approachIn the present scenario, the inclination of battery for portable devices has been increasing tremendously. Therefore, battery life has become an essential element for portable devices. To increase the battery life of portable devices such as communication devices, these have to be made with low power requirements. Hence, power consumption is one of the main issues in CMOS design. To reap a low-power battery with optimum delay constraints, a new methodology is proposed by using the advantages of a low leakage GALEOR approach. By integrating the proposed GALEOR technique with conventional PTFFs, a reduction in power consumption is achieved.FindingsThe design was implemented in mentor graphics EDA tools with 130 nm technology, and the proposed technique is compared with existing conventional PTFFs in terms of power consumption. The average power consumed by the proposed technique (RP-PTFF clock gating with the GALEOR technique) is reduced to 47 per cent compared to conventional PTFF for 100 per cent switching activity.Originality/valueThe study demonstrates that RP-PTFF with clock gating using the GALEOR approach is a design that is superior to the conventional PTFFs.


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