Effect of Ar / O2 gas flow ratio on photocatalytic efficiency of TiO2 films prepared by DC magnetron sputtering

2007 ◽  
Author(s):  
Zhao Lin ◽  
Lv Liping ◽  
Jiawen Qiu
Keyword(s):  
Magnetron Sputtering ◽  
Gas Flow ◽  
Tio2 Films ◽  
Photocatalytic Efficiency ◽  
Flow Ratio ◽  
Dc Magnetron Sputtering ◽  
Gas Flow Ratio

Ti Doped Cu2O Thin Films: DC Magnetron Sputtering and Structural and Optical Studies

2022 ◽  
Vol 1048 ◽  
pp. 158-163
Author(s):  
Mekala Lavanya ◽  
Srirangam Sunita Ratnam ◽  
Thota Subba Rao
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Gas Flow ◽  
Visible Region ◽  
Diffraction Field ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Film Properties ◽  
Glass Substrates ◽  
Gas Flow Ratio

Ti doped Cu2O thin films were prepared at distinct Argon/Oxygen gas flow ratio of 34/1, 33/2,32/3 and 31/4 with net flow (Ar+O2) of 35 sccm by using DC magnetron sputtering system on glass substrates at room temperature. The gas mixture influence on the film properties studied by using X-ray diffraction, Field emission scanning electron microscopy and UV-Visible spectroscopy. From XRD results, it is evident that, with a decrease in oxygen content, the amplitude of (111) peak increased, peak at a 35.67o scattering angle and the films shows a simple cubic structure. The FESEM images indicated the granularity of thin films was distributed uniformly in a homogenous model and also includes especially pores and cracks. The film deposited at 31/4 showed a 98% higher transmittance in the visible region.

Dependence of Electrical and Optical Properties of the Al Doped ZnO for Transparent Conductors Deposited by rf–Magnetron Sputtering on the O2/Ar Gas Flow Ratio

2007 ◽  
Vol 336-338 ◽  
pp. 564-566 ◽  
Author(s):  
Chong Mu Lee ◽  
Keun Bin Yim ◽  
Choong Mo Kim
Keyword(s):  
Surface Roughness ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Gas Flow ◽  
Rf Magnetron Sputtering ◽  
Transparent Conductors ◽  
Flow Ratio ◽  
Gas Flow Ratio ◽  
Magnetron Sputter Deposition ◽  
Ar Gas

ZnO:Al thin films were deposited on sapphire(001) substrates by RF magnetron sputtering. Effects of the O2/Ar flow ratio in the sputtering process on the crystallinity, surface roughness, carrier concentration, carrier mobility, and optical properties of the films were investigated. AFM analysis results show that the surface roughness is lowest at the O2/Ar flow ratio of 0.5 and tends to increase owing to the increase of the grain size as the O2/Ar flow ratio increases further than 0.5. According to the Hall measurement results the resistivity increases as the O2/Ar flow ratio increases. The transmittance of the film tends to increase as the O2/Ar gas flow ratio increases up to 0.5 but it nearly does not change with continued increases in the O2/Ar flow ratio. Considering the effects of the the O2/Ar flow ratio on the surface roughness, electrical resistivity and transmittance properties of the ZnO:Al film the optimum O2/Ar flow ratio is 0.5 in the RF magnetron sputter deposition of the ZnO:Al film.

scholarly journals Influence of N2 Gas Flow Ratio and Working Pressure on Amorphous Mo–Si–N Coating during Magnetron Sputtering

Coatings ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 34 ◽  
Author(s):  
Ki Seong Lim ◽  
Young Seok Kim ◽  
Sung Hwan Hong ◽  
Gian Song ◽  
Ki Buem Kim
Keyword(s):  
Electron Microscopy ◽  
Elastic Modulus ◽  
Magnetron Sputtering ◽  
Gas Flow ◽  
Amorphous Coating ◽  
Flow Ratio ◽  
Working Pressure ◽  
X Ray ◽  
Transmission Electron ◽  
Gas Flow Ratio

In this study, Mo–Si–N coatings were deposited on Si wafers and tungsten carbide substrates using a reactive direct current magnetron sputtering system with a MoSi powder target. The influence of sputtering parameters, such as the N2 gas flow ratio and working pressure, on the microstructure and mechanical properties (hardness (H), elastic modulus (E), and H/E ratio) of the Mo–Si–N coatings was systematically investigated using X-ray diffractometry (XRD), scanning electron microscopy (SEM), nanoindentation, and transmission electron microscopy (TEM). The gas flow rate was a significant parameter for determining the crystallinity and microstructure of the coatings. A Mo2N crystalline coating could be obtained by a high N2 gas flow ratio of more than 35% in the gas mixture, whereas an amorphous coating could be formed by a low N2 gas flow ratio of less than 25%. Furthermore, the working pressure played an important role in controlling the smooth surface and densified structure of the Mo–Si–N coating. For the amorphous Mo–Si–N coating deposited with the lowest working pressure (1 mTorr), the hardness, elastic modulus, and H/E ratio reached from 9.9 GPa, 158.8 GPa, and 0.062 up to 17.9 GPa, 216.1 GPa, and 0.083, respectively.

Fabrication of Tungsten-Tellurite Glass Thin Films using Radio Frequency Magnetron Sputtering Method and Optical Property Characterization

2004 ◽  
Vol 817 ◽  
Author(s):  
Ki-Young Yoo ◽  
Sanghoon Shin ◽  
Youngman Kim ◽  
Jong-Ha Moon ◽  
Jin Hyeok Kim
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Gas Flow ◽  
Room Temperature ◽  
Tellurite Glass ◽  
Processing Parameters ◽  
Flow Ratio ◽  
Rf Power ◽  
Gas Flow Ratio

AbstractTungsten-tellurite glass thin films were fabricated by radio-frequency (rf) magnetron sputtering method at various processing parameters such as substrate temperatures, Ar/O2 processing gas flow ratio, processing pressure, and rf power from a 70TeO2-30WO3 target fabricated by solid–state sintering method. The effects of processing parameters on the growth rate, the surface morphologies, the crystallinity, and refractive indices of thin films were investigated using atomic force microscopy, X-ray diffractometer, scanning electron microscopy, and UV spectrometer. Amorphous glass thin films with a surface roughness of 4∼6 nm were obtained only at room temperature and crystalline phase were observed in all as-deposited thin films prepared at above the room temperature. The deposition rate strongly depends on the processing parameters. It increases as the rf power increases and the processing pressure decreases. Especially, it changes remarkably as varying the Ar/O2 gas flow ratio from 40sccm/0sccm to 0sccm/40sccm. When the films were formed in pure Ar atmosphere it shows a deposition rate of ∼0.2 μm /h, whereas ∼1.5 μm/h when the films was formed in pure O2 atmosphere.

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