3.8 W/mm RF Power Density for ALD Al2O3-Based Two-Dimensional Hole Gas Diamond MOSFET Operating at Saturation Velocity

AbstractFunction elements (FE) are vital components of nanochannel-systems for artificially regulating ion transport. Conventionally, the FE at inner wall (FEIW) of nanochannel−systems are of concern owing to their recognized effect on the compression of ionic passageways. However, their properties are inexplicit or generally presumed from the properties of the FE at outer surface (FEOS), which will bring potential errors. Here, we show that the FEOS independently regulate ion transport in a nanochannel−system without FEIW. The numerical simulations, assigned the measured parameters of FEOS to the Poisson and Nernst-Planck (PNP) equations, are well fitted with the experiments, indicating the generally explicit regulating-ion-transport accomplished by FEOS without FEIW. Meanwhile, the FEOS fulfill the key features of the pervious nanochannel systems on regulating-ion-transport in osmotic energy conversion devices and biosensors, and show advantages to (1) promote power density through concentrating FE at outer surface, bringing increase of ionic selectivity but no obvious change in internal resistance; (2) accommodate probes or targets with size beyond the diameter of nanochannels. Nanochannel-systems with only FEOS of explicit properties provide a quantitative platform for studying substrate transport phenomena through nanoconfined space, including nanopores, nanochannels, nanopipettes, porous membranes and two-dimensional channels.

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Lamellar Porous Vermiculite Membranes for Boosting Nanofluidic Osmotic Energy Conversion

Journal of Materials Chemistry A ◽

10.1039/d1ta02400k ◽

2021 ◽

Author(s):

Li Cao ◽

Hong Wu ◽

Chunyang Fan ◽

Zhiming Zhang ◽

Benbing Shi ◽

...

Keyword(s):

Energy Conversion ◽

Power Density ◽

Great Promise ◽

Two Dimensional ◽

Nanofluidic Channels ◽

Salinity Gradients ◽

Transmembrane Resistance

Lamellar membranes with two-dimensional nanofluidic channels hold great promise in harvesting osmotic energy from salinity gradients. However, the power density is often limited by the high transmembrane resistance primarily caused...

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Control of Plasma Etch Profiles with Plasma Sheath Electric Field and RF Power Density

Journal of The Electrochemical Society ◽

10.1149/1.2123602 ◽

1982 ◽

Vol 129 (11) ◽

pp. 2541-2547 ◽

Cited By ~ 18

Author(s):

C. B. Zarowin ◽

R. S. Horwath

Keyword(s):

Electric Field ◽

Power Density ◽

Plasma Sheath ◽

Rf Power ◽

Plasma Etch

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RF Power Dependence of the Material Properties of PECVD Silicon Dioxide

MRS Proceedings ◽

10.1557/proc-165-113 ◽

1989 ◽

Vol 165 ◽

Cited By ~ 2

Author(s):

J. D. Chapple-Sokol ◽

E. Tiemey ◽

J. Batey

Keyword(s):

Nitrous Oxide ◽

Silicon Dioxide ◽

Power Density ◽

Material Properties ◽

Deposition Process ◽

Power Dependence ◽

Rf Power ◽

Deposition Rates ◽

Physical Integrity ◽

Silane Concentration

AbstractSilicon dioxide films deposited from the PECVD reaction of silane and nitrous oxide in the presence of helium were studied to determine the effects of RF power on the deposition process. Increased RF power density yielded oxides which were structurally and chemically more homogeneous. The combination of elevated power density with increased silane concentration resulted in the deposition of films of high electrical and physical integrity at high deposition rates.

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Top-gate ZnO-based TFTs by RF Sputtering

MRS Proceedings ◽

10.1557/proc-1035-l11-32 ◽

2007 ◽

Vol 1035 ◽

Author(s):

Shahrukh Khan ◽

Abbas jamshidi-Roudbari ◽

Miltiadis Hatalis

Keyword(s):

Thin Films ◽

Power Density ◽

Rf Sputtering ◽

Visible Spectrum ◽

Drain Current ◽

Channel Length ◽

Zno Thin Films ◽

Chamber Pressure ◽

Rf Power ◽

Bridge Structures

AbstractThis work emphasizes room temperature deposition and fabrication of top-gated staggered structure ZnO-TFTs and integration of ZnO-TFT based simple logic circuits. We synthesized ZnO thin films by RF sputtering in an Ar/Oxygen ambience with no intentional heating of the substrates. The electrical, optical and structural properties of the ZnO thin films can be well-controlled by altering process parameters such as RF power density and relative Oxygen partial pressure. Typical deposition was carried out at a chamber pressure of 15 mTorr, Ar/Oxygen flow rates of 15 sccm/1 sccm and RF power density of 3W/cm2. The resistivity of the as-deposited films was between 104-106 Ù-cm with high optical transparency (>80%) in the visible spectrum and minimal surface roughness as detected by high-resolution AFM imaging. Gated van der Pauw and Kelvin-bridge structures were lithographically patterned to asses ZnO channel resistance. In the completed devices, a dual-stack (Ta2O5/SiO2) dielectric layer was effective in suppressing gate-leakage current below 10 pA and enabled depletion-mode ZnO-TFT operation exhibiting hard saturation. A Ti/Au metallization scheme was adopted to provide good ohmic contact to ZnO. TFTs retained well-behaved transfer characteristics down to a channel length of 4 ìm with on/off drain current ratio exceeding 105, threshold voltage between -15 V to -5 V and inverse sub-threshold slope of around 1.75 V/decade.

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Microcrystalline Silicon Films Produced by RF Magnetron Sputtering and the Effect of Diffrent Ambients on their Conductivity

MRS Proceedings ◽

10.1557/proc-164-69 ◽

1989 ◽

Vol 164 ◽

Cited By ~ 1

Author(s):

Ratnabali Berjee ◽

A. K. Bandyopadhyay ◽

S. N. Sharma ◽

A. K. Patabyal ◽

A.K. Barua

Keyword(s):

Magnetron Sputtering ◽

Power Density ◽

Rf Magnetron Sputtering ◽

Silicon Films ◽

Critical Parameters ◽

Rf Power ◽

Microcrystalline Silicon ◽

Film Properties

AbstractResults on characterisation of undoped, μc-Si:H films prepared by rf magnetron sputtering technique are presented. Highly conducting films (10−3 Δ−cm−1) were obtained at fairly low rf power density (l.2W/cm2). Critical parameters for obtaining microcrystalline phase were identified. The effect of humid ambient on film properties was looked into.

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High Power-Density 4H-SiC RF MOSFETs

Materials Science Forum ◽

10.4028/www.scientific.net/msf.527-529.1277 ◽

2006 ◽

Vol 527-529 ◽

pp. 1277-1280 ◽

Cited By ~ 1

Author(s):

G. Gudjónsson ◽

Fredrik Allerstam ◽

H.Ö. Ólafsson ◽

Per Åke Nilsson ◽

Hans Hjelmgren ◽

...

Keyword(s):

Power Density ◽

High Power ◽

Cutoff Frequency ◽

Double Gate ◽

High Power Density ◽

Rf Power ◽

Drain Voltage ◽

Power Mosfets ◽

First Time ◽

Power Densities

We have made a 4H-SiC RF power MOSFETs with cutoff frequency up to 12 GHz, delivering RF power of 1.9 W/mm at 3 GHz. The transistors withstand 200 V drain voltage, are normally-off, and show no gate lag, which is often encountered in SiC MESFETs. The measured devices have a single drain finger and a double gate finger and a total gate width of 0.8 mm. To our knowledge this is the first time that power densities above 1 W/mm at 3 GHz are reported for SiC MOSFETs.

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