The Boron-Oxygen Defect: Does its Concentration Really Depends on the Boron/Dopant Concentration?

2020 ◽  
Author(s):  
Fiacre Rougieux ◽  
Chang Sun ◽  
Mattias Juhl
Keyword(s):  
Dopant Concentration ◽  
Oxygen Defect ◽  
Boron Dopant

Redistribution of Dopant and Impurity Concentrations During the Formation of Uniform Wsi2 Films by RTP

1988 ◽  
Vol 100 ◽  
Author(s):  
Michael P. Siegal ◽  
Jorge J. Santiago
Keyword(s):  
Thermal Processing ◽  
Dopant Concentration ◽  
High Vacuum ◽  
Rapid Thermal Processing ◽  
Si Substrate ◽  
Time Intervals ◽  
Boron Dopant ◽  
P Type ◽  
Secondary Ion

ABSTRACTSecondary ion mass spectroscopy has been used to study the effects of rapid thermal processing on the formation of tetragonal tungsten disilicide thin films on Si(100), p-type 5 Omaga;, cm wafers. The substrates were chemically etched, followed by an RF sputter depostion of 710Å W metal. The samples were then fast radiatively processed in an RTP system for time intervals ranging from 15 to 45 seconds at high temperature (∼1100°C) under high vacuum.The redistribution of the boron dopant concentration profile is studied and shows that boron moves from the Si-substrate into the growing Wsi2 film, eventually escaping into the vacuum. Oxygen is the major impurity in these samples and its removal from the interface has been shown to improve the quality of the silicide film. Trace quantities of F, Cl, Na, K, C and Cr have also been detected.

Shaping of Dopant Concentration Profiles in Silicon by Multiple–Pulse Laser Processing

1981 ◽  
Vol 4 ◽  
Author(s):  
C Hill ◽  
A L Butler ◽  
J A Daly
Keyword(s):  
Integrated Circuits ◽  
High Speed ◽  
Dopant Concentration ◽  
Bipolar Transistors ◽  
New Approach ◽  
State Diffusion ◽  
Boron Dopant ◽  
Controllable Fabrication ◽  
First Time ◽  
Dopant Profiles

ABSTRACTOver the past ten years, the performance of bipolar transistors in high speed integrated circuits has been steadily improved by fully exploiting the complex solid state diffusion behaviour of dopants in silicon to make successively closer approaches to the ideal dopant profiles in the emitter and base regions of the transistor. Further optimisation requires a new approach, and in this paper an entirely new method of shaping the dopant profiles by exploiting the large ratio (about 108) of diffusion coefficients in liquid and solid silicon near the melting point is described Melting is effected by irradiation with a homogenised pulse from a Q-switched ruby laser. Completely new features of the technique are the controllable fabrication of both quasi–Gaussian and quasi-rectangular dopant profiles independent of dopant (arsenic or boron), dopant concentration (1013−1016atom cm−2) or presence of other dopants. This allows for the first time independent optimisation of emitter profile shape, emitter doping level, and base profile in bipolar transistor structures.

Alternating Plane-View and Cross-Section Scanning Capacitance Microscope Technique to Reveal Various Implant Issue

2007 ◽  
Author(s):  
Tsan-Chang Chuang ◽  
Cha-Ming Shen ◽  
Shi-Chen Lin ◽  
Chen-May Huang ◽  
Jin-Hong Chou ◽  
...  
Keyword(s):  
Cross Section ◽  
Scanning Probe Microscopy ◽  
Dopant Concentration ◽  
Scanning Probe ◽  
Correct Selection ◽  
Cross Sectional ◽  
Root Cause ◽  
Excellent Spatial Resolution ◽  
Microscope Technique ◽  
Plane View

Abstract Scanning capacitance microscopy (SCM) is a 2-D carrier and/or dopant concentration profiling technique under development that utilizes the excellent spatial resolution of scanning probe microscopy. However, PV-SCM has limited capability to achieve the goal due to inherent "plane" trait. On top of that, deeper concentration profile just like deep N-well is also one of restrictions to use. For representing above contents more clearly, this paper presents a few cases that demonstrate the alternated and optimized application of PV-SCM and X-SCM. The case studies concern Joint Test Action Group failure and stand-by failure. These cases illustrate that the correct selection from either plane-view or cross-sectional SCM analysis according to the surrounding of defect could help to exactly and rapidly diagnose the failure mechanism. Alternating and optimizing PV-SCM and X-SCM techniques to navigate various implant issue could provide corrective actions that suit local circumstance of defects and identify the root cause.

Sol-gel growth of Ni doped CdS on glass substrates: effect of spin coating speed and dopant concentration

2020 ◽  
Vol 10 ◽  
Author(s):  
Atefeh Nazari Setayesh ◽  
Hassan Sedghi
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Spin Coating ◽  
Optical Band Gap ◽  
Dopant Concentration ◽  
Rotation Speed ◽  
Sol Gel ◽  
Band Gap Energy ◽  
Gap Energy ◽  
Glass Substrates

Background: In this work, CdS thin films were synthesized by sol-gel method (spin coating technique) on glass substrates to investigate the optical behavior of the film. Methods: Different substrate spin coating speeds of 2400, 3000, 3600 rpm and different Ni dopant concentrations of 0 wt.%, 2.5 wt.%, 5 wt.%) were investigated. The optical properties of thin films such as refraction index, extinction coefficient, dielectric constant and optical band gap energy of the layers were discussed using spectroscopic ellipsometry method in the wavelength range of 300 to 900 nm. Results: It can be deduced that substrate rotation speed and dopant concentration has influenced the optical properties of thin films. By decreasing rotation speed of the substrate which results in films with more thicknesses, more optical interferences were appeared in the results. Conclusion: The samples doped with Ni comparing to pure ones have had more optical band gap energy.

Flexible High-Energy and Stable Rechargeable Vanadium-Zinc Battery Based on Oxygen Defect Modulated V2O5 Cathode

Nano Energy ◽  
2021 ◽  
pp. 106164
Author(s):  
Xinyue Liang ◽  
Lijin Yan ◽  
Wenpo Li ◽  
Youcun Bai ◽  
Chong Zhu ◽  
...  
Keyword(s):  
High Energy ◽  
Oxygen Defect

scholarly journals Polymer Thermal Treatment Production of Cerium Doped Willemite Nanoparticles: An Analysis of Structure, Energy Band Gap and Luminescence Properties

Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1118
Author(s):  
Ibrahim Mustapha Alibe ◽  
Khamirul Amin Matori ◽  
Mohd Hafiz Mohd Zaid ◽  
Salisu Nasir ◽  
Ali Mustapha Alibe ◽  
...  
Keyword(s):  
Solid State ◽  
Thermal Treatment ◽  
Band Gap ◽  
Optical Band Gap ◽  
Dopant Concentration ◽  
Blue Emission ◽  
Green Emission ◽  
Band Gap Energy ◽  
Solid State Lighting ◽  
Gap Energy

The contemporary market needs for enhanced solid–state lighting devices has led to an increased demand for the production of willemite based phosphors using low-cost techniques. In this study, Ce3+ doped willemite nanoparticles were fabricated using polymer thermal treatment method. The special effects of the calcination temperatures and the dopant concentration on the structural and optical properties of the material were thoroughly studied. The XRD analysis of the samples treated at 900 °C revealed the development and or materialization of the willemite phase. The increase in the dopant concentration causes an expansion of the lattice owing to the replacement of larger Ce3+ ions for smaller Zn2+ ions. Based on the FESEM and TEM micrographs, the nanoparticles size increases with the increase in the cerium ions. The mean particles sizes were estimated to be 23.61 nm at 1 mol% to 34.02 nm at 5 mol% of the cerium dopant. The optical band gap energy of the doped samples formed at 900 °C decreased precisely by 0.21 eV (i.e., 5.21 to 5.00 eV). The PL analysis of the doped samples exhibits a strong emission at 400 nm which is ascribed to the transition of an electron from localized Ce2f state to the valence band of O2p. The energy level of the Ce3+ ions affects the willemite crystal lattice, thus causing a decrease in the intensity of the green emission at 530 nm and the blue emission at 485 nm. The wide optical band gap energy of the willemite produced is expected to pave the way for exciting innovations in solid–state lighting applications.

Impact of Al doping on a hydrothermally synthesized β-Ga2O3 nanostructure for photocatalysis applications

RSC Advances ◽  
2021 ◽  
Vol 11 (13) ◽  
pp. 7338-7346
Author(s):  
Sunjae Kim ◽  
Heejoong Ryou ◽  
In Gyu Lee ◽  
Myunghun Shin ◽  
Byung Jin Cho ◽  
...  
Keyword(s):  
Photocatalytic Activity ◽  
Grain Boundary ◽  
Redox Potential ◽  
Surface Area ◽  
Crystal Defect ◽  
Oxygen Defect ◽  
Al Doping ◽  
Photocatalytic Reactions

The photocatalytic activity is correlated with different parameters affecting the photocatalytic reactions; redox potential (RP), surface area (SA), crystal defect (CD), oxygen defect (OD), and grain-boundary induced defect (GD).

scholarly journals Boron Influence on Defect Structure and Properties of Lithium Niobate Crystals

Crystals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 458
Author(s):  
Nikolay V. Sidorov ◽  
Natalia A. Teplyakova ◽  
Olga V. Makarova ◽  
Mikhail N. Palatnikov ◽  
Roman A. Titov ◽  
...  
Keyword(s):  
Lithium Niobate ◽  
Defect Structure ◽  
Photorefractive Effect ◽  
Ferroelectric Properties ◽  
High Concentration ◽  
Oh Groups ◽  
Boron Doped ◽  
Compositional Uniformity ◽  
Boron Dopant ◽  
Lithium Niobate Crystals

Defect structure of nominally pure lithium niobate crystals grown from a boron doped charge have been studied by Raman and optical spectroscopy, laser conoscopy, and photoinduced light scattering. An influence of boron dopant on optical uniformity, photoelectrical fields values, and band gap have been also studied by these methods in LiNbO3 crystals. Despite a high concentration of boron in the charge (up to 2 mol%), content in the crystal does not exceed 10−4 wt%. We have calculated that boron incorporates only into tetrahedral voids of crystal structure as a part of groups [BO3]3−, which changes O–O bonds lengths in O6 octahedra. At this oxygen–metal clusters MeO6 (Me: Li, Nb) change their polarizability. The clusters determine optically nonlinear and ferroelectric properties of a crystal. Chemical interactions in the system Li2O–Nb2O5–B2O3 have been considered. Boron, being an active element, structures lithium niobate melt, which significantly influences defect structure and physical properties of a crystal grown from such a melt. At the same time, amount of defects NbLi and concentration of OH groups in LiNbO3:B is close to that in stoichiometric crystals; photorefractive effect, optical, and compositional uniformity on the contrary is higher.

Annealing effects on phase transformation and powder microstructure of nanocrystalline zirconia polymorphs

1999 ◽  
Vol 14 (1) ◽  
pp. 90-96 ◽  
Author(s):  
R. Ramamoorthy ◽  
S. Ramasamy ◽  
D. Sundararaman
Keyword(s):  
Monoclinic Phase ◽  
Lattice Strain ◽  
Dopant Concentration ◽  
Precipitation Method ◽  
Strain Effect ◽  
Volume Percentage ◽  
Annealing Temperatures ◽  
Annealing Effects ◽  
Nanocrystalline Zirconia ◽  
Average Size

Nanocrystalline zirconia powders in pure form and doped with yttria and calcia were prepared by the precipitation method. In the as-prepared condition, all the doped samples show only monoclinic phase, independent of the dopants and dopant concentration. On annealing the powders at 400 °C and above, in the case of 3 and 6 mol% Y2O3 stabilized ZrO2 (3YSZ and 6YSZ), the monoclinic phase transforms to tetragonal and cubic phases, respectively, whereas in 3 and 6 mol% CaO stabilized ZrO2 (3CSZ and 6CSZ), the volume percentage of the monoclinic phase gradually decreases up to the annealing temperature of about 1000 °C and then increases for higher annealing temperatures. The presence of monoclinic phase in the as-prepared samples of doped zirconia has been attributed to the lattice strain effect which results in the less symmetric lattice. For the annealing temperatures below 1000 °C, the phenomenon of partial stabilization of the tetragonal phase in 3CSZ and 6CSZ can be explained in terms of the grain size effect. High resolution transmission electron microscopy (HRTEM) observations reveal the lattice strain structure in the as-prepared materials. The particles are found to be a tightly bound aggregate of small crystallites with average size of 10 nm. The morphology of the particles is observed to be dependent on the dopants and dopant concentration.

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