Improved the C–V Curve Shift, Trap State Responsiveness, and Dynamic R ON of SBDs by the Composite 2-D–3-D Channel Heterostructure Under the OFF-State Stress

2020 ◽  
Vol 67 (11) ◽  
pp. 4808-4812
Author(s):  
Ling Yang ◽  
Meng Zhang ◽  
Bin Hou ◽  
Minhan Mi ◽  
Mei Wu ◽  
...  
Keyword(s):  
2021 ◽  
Vol 125 (3) ◽  
pp. 2055-2063
Author(s):  
K. Kůsová ◽  
T. Popelář ◽  
I. Pelant ◽  
G. Morselli ◽  
S. Angeloni ◽  
...  

2017 ◽  
Vol 872 ◽  
pp. 30-37
Author(s):  
Meng Han Wang ◽  
Kang Wei ◽  
Xiao Juan Li

The hot compressive deformation behaviors of ZHMn34-2-2-1 manganese brass are investigated on Thermecmastor-Z thermal simulator over wide processing domain of temperatures (923K-1073K) and strain rates (0.01s-1-10s-1). The true stress-strain curves exhibit a single peak stress, after which the stress monotonously decreases until a steady state stress occurs, indicating a typical dynamic recrystallization. A revised constitutive model coupling flow stress with strain, strain rate and deformation temperature is established with the material constants expressed by polynomial fitting of strain. Moreover, better prediction ability of the constitutive model is achieved by implementation of a simple approach for modified the Zener-Hollomon parameter considering the compensation of strain rate and temperature increment. By comparing the predicted and experimented values, the correlation coefficient and mean absolute relative error are 0.997 and 2.363%, respectively. The quantitative statistical results indicate that the proposed constitutive model can precisely characterize the hot deformation behavior of ZHMn34-2-2-1 manganese brass.


Author(s):  
Alessio Spessot ◽  
Marc Aoulaiche ◽  
Moonju Cho ◽  
Jacopo Franco ◽  
Tom Schram ◽  
...  
Keyword(s):  
High K ◽  

2010 ◽  
Vol 4 (2) ◽  
pp. 63-68 ◽  
Author(s):  
Iryna Cherniakova ◽  
Svitlana Zdolnik ◽  
Vitaly Petrovsky

It has been established that cooling rate after hot pressing has influence on microstructure, electrical conductivity and charge storage in Si3N4 ceramics with TiO2 and TiH2 additives, which can be used as substrates for the large capacity micro assemblies by Flip-Chip technology. It was shown that the critical cooling rate is 30?C/min for the Si3N4-TiO2 and 50?C/min for the Si3N4-TiH2 ceramics. Electrical conductivity is structurally sensitive property, strongly connected with evolution of Si3N4 microstructure. The best properties are typical for Si3N4 ceramics characterized by mono-trap state level with the activation energy of about 0.8 eV, obtained at the characteristic cooling rates. .


RSC Advances ◽  
2015 ◽  
Vol 5 (41) ◽  
pp. 32110-32117 ◽  
Author(s):  
Xiao-Juan Shi ◽  
Yi Wang ◽  
Dapeng Wu ◽  
Yujun Qin ◽  
Xi-Cheng Ai ◽  
...  

The trap state distributions in hierarchical TiO2 microspheres and their influence on charge transport/recombination dynamics.


2012 ◽  
Vol 715-716 ◽  
pp. 492-497 ◽  
Author(s):  
Darren G. Cram ◽  
Hatem S. Zurob ◽  
Yves J.M. Bréchet ◽  
Christopher R. Hutchinson

A physically-based model for nucleation during discontinuous dynamic recrystallization (DDRX) has been developed and is coupled with polyphase plasticity and grain growth models to predict the macroscopic stress and grain size evolution during straining. The nucleation model is based on a recent description for static recrystallization and considers the dynamically evolving substructure size. Model predictions are compared with literature results on DDRX in pure Cu as a function of initial grain size, deformation temperature and strain-rate. The characteristic DRX features such as single to multiple peak stress transitions and convergence towards a steady-state stress and grain size are quantitatively reproduced by the model.


2018 ◽  
Vol 54 (1) ◽  
pp. 62-65 ◽  
Author(s):  
Sky Paderick ◽  
Matthew Kessler ◽  
Tyler J. Hurlburt ◽  
Steven M. Hughes

Silver gallium sulfide nanocrystals demonstrate tunability for trap-state emission (650 nm) or band gap fluorescence (460 nm).


1982 ◽  
Vol 17 (3) ◽  
pp. 123-132 ◽  
Author(s):  
K D Al-Faddagh ◽  
R T Fenner ◽  
G A Webster

The paper describes a procedure, based on a finite element method, for calculating directly the steady-state stress distribution in circumferentially notched bars subjected to creep without the need for obtaining solutions at intermediate time intervals. Good agreement is obtained with relevant approximate plasticity solutions and with numerical calculations which approach the steady-state over a period of time from the initial elastic stress distribution. Also, the procedure is equally applicable to primary, secondary, and tertiary creep, provided the variables of stress and time are separable in the creep law. Results obtained for a range of notch geometries and values of the stress index, n, are reported. It is found for each profile that a region of approximately constant effective stress, σ, independent of n, is obtained which can be used to characterise the overall behaviour of the notch throat region when a steady-state is reached sufficiently early in life. An approximate method for estimating the maximum equivalent steady-state stress across the notch throat is also presented which does not require a computer solution.


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