scholarly journals An Integrated SiC CMOS Gate Driver for Power Module Integration

2019 ◽  
Vol 34 (11) ◽  
pp. 11191-11198 ◽  
Author(s):  
Matthew Barlow ◽  
Shamim Ahmed ◽  
A. Matt Francis ◽  
H. Alan Mantooth
Keyword(s):  
Power Module ◽  
Gate Driver

First Demonstration of High Temperature SiC CMOS Gate Driver in Bridge Leg for Hybrid Power Module Application

2018 ◽  
Vol 924 ◽  
pp. 854-857
Author(s):  
Ming Hung Weng ◽  
Muhammad I. Idris ◽  
S. Wright ◽  
David T. Clark ◽  
R.A.R. Young ◽  
...  
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Initial Increase ◽  
Reliability Test ◽  
Power Devices ◽  
Power Module ◽  
Hybrid Power ◽  
Gate Driver ◽  
Passive Circuit

A high-temperature silicon carbide power module using CMOS gate drive technology and discrete power devices is presented. The power module was aged at 200V and 300 °C for 3,000 hours in a long-term reliability test. After the initial increase, the variation in the rise time of the module is 27% (49.63ns@1,000h compared to 63.1ns@3,000h), whilst the fall time increases by 54.3% (62.92ns@1,000h compared to 97.1ns@3,000h). The unique assembly enables the integrated circuits of CMOS logic with passive circuit elements capable of operation at temperatures of 300°C and beyond.

scholarly journals 30-kW All-SiC Inverter with 3D-Printed Air-Cooled Heatsinks for Plug-In and Full Electric Vehicle Applications

2018 ◽  
Vol 924 ◽  
pp. 845-848 ◽  
Author(s):  
Madhu Sudhan Chinthavali ◽  
Zhi Qiang Wang
Keyword(s):  
Electric Vehicle ◽  
Continuous Operation ◽  
Voltage Source ◽  
High Power Density ◽  
Power Module ◽  
Pulse Test ◽  
Three Phase ◽  
Channel Gate ◽  
3D Printed ◽  
Gate Driver

This paper presents the design and development of a 30-kW 3D printed based air-cooled silicon carbide (SiC) inverter for electric vehicle application. Specifically, an all-SiC air-cooled power module is designed, aiming at reduced thermal resistance for high temperature and high power density operation. The module assembly incorporates three major parts: an optimized 3D printed heat sink, a SiC MOSFET phase leg module, and a two-channel gate driver. The electrical and thermal performance of the power module is evaluated through double pulse test and continuous operation. Based on the air-cooled power module, a three-phase half-bridge voltage source inverter with 3D-printed air duct is built and tested to further verify the performance of the power module.

Dual-function gate driver for a power module with SiC junction field transistors

2013 ◽  
Author(s):  
Juan Colmenares ◽  
Dimosthenis Peftitsis ◽  
Jacek Rabkowski ◽  
Hans-Peter Nee
Keyword(s):  
Dual Function ◽  
Power Module ◽  
Gate Driver

scholarly journals High temperature, Smart Power Module for aircraft actuators

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000069-000074
Author(s):  
Khalil El Falahi ◽  
Stanislas Hascoët ◽  
Cyril Buttay ◽  
Pascal Bevilacqua ◽  
Luong-Viet Phung ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Wide Temperature Range ◽  
Power Module ◽  
Smart Power ◽  
Temperature Range ◽  
Electric Aircraft ◽  
Gate Driver ◽  
Proper Operation ◽  
More Electric Aircraft

More electric aircraft require converters that can operate over a wide temperature range (−55 to more than 200°C). Silicon carbide JFETs can satisfy these requirements, but there is a need for suitable peripheral components (gate drivers, passives. . . ). In this paper, we present a “smart power module” based on SiC JFETs and dedicated integrated gate driver circuits. The design is detailed, and some electrical results are given, showing proper operation of the module up to 200°C.

Comparative Evaluation and Analysis of Gate Driver Impacts on a SiC MOSFET-Gate Driver Integrated Power Module

2017 ◽  
Vol 2017 (1) ◽  
pp. 000247-000251
Author(s):  
Liqi Zhang ◽  
Suxuan Guo ◽  
Pengkun Liu ◽  
Alex Q. Huang
Keyword(s):  
Comparative Evaluation ◽  
Switching Frequency ◽  
Common Source ◽  
Power Module ◽  
Switching Speed ◽  
Switching Performance ◽  
Switching Losses ◽  
Power Modules ◽  
Gate Driver ◽  
The Common

Abstract SiC MOSFET-gate driver integrated power module is proposed to provide ultra-low stray inductance compared to traditional TO-247 or TO-220 packages. Kelvin connection eliminates the common source stray inductance and zero external gate resistor enables faster switching. This module can be operated at MHz switching frequency for high power applications with lower switching losses than discrete packages. Two different gate drivers and two different SiC MOSFETs are grouped and integrated into three integrated power modules. Comparative evaluation and analysis of gate driver impacts on switching speed of SiC MOSFET is shown in detail. The paper provides an insight of the gate driver impacts on the device switching performance in an integrated power module.

Low Switching Energy 1200V Normally-Off SiC VJFET Power Modules

2011 ◽  
Vol 679-680 ◽  
pp. 583-586 ◽  
Author(s):  
David C. Sheridan ◽  
Andrew Ritenour ◽  
Volodymyr Bondarenko ◽  
Jeff B. Casady ◽  
Robin L. Kelley
Keyword(s):  
High Frequency ◽  
High Efficiency ◽  
Bridge Circuit ◽  
Schottky Diodes ◽  
Power Module ◽  
Enhancement Mode ◽  
Switching Losses ◽  
Power Modules ◽  
Standard Module ◽  
Gate Driver

This work presents the progress in developing an all SiC based power module for use in high frequency and high efficiency applications. Using parallel combinations of 1200V enhancement mode SiC VJFETs (36mm2) and Schottky diodes (23mm2), a total on-resistance of only 10mOhm (2.7m-cm2) was achieved at ID=100A in a commercially available standard module configured as a half-bridge circuit. Careful attention to module layout, gate driver design, and the addition of optimized snubbers resulted in excellent switching waveforms with low total switching losses of 1.25mJ when switching 100A at 150oC.

Dual-Function Gate Driver for a Power Module With SiC Junction Field-Effect Transistors

2014 ◽  
Vol 29 (5) ◽  
pp. 2367-2379 ◽  
Author(s):  
Juan Colmenares ◽  
Dimosthenis Peftitsis ◽  
Jacek Rabkowski ◽  
Diane-Perle Sadik ◽  
Hans-Peter Nee
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Dual Function ◽  
Power Module ◽  
Gate Driver ◽  
Junction Field Effect Transistors

Gate Driver Design in a 1 μm SiC CMOS Process for Heterogeneous Integration Inside SiC Power Module

2020 ◽  
Vol 2020 (1) ◽  
pp. 000281-000285
Author(s):  
Affan Abbasi ◽  
Asif Faruque ◽  
Sajib Roy ◽  
Robert Murphree ◽  
Tobias Erlbacher ◽  
...  
Keyword(s):  
Flip Chip ◽  
Current Drive ◽  
Heterogeneous Integration ◽  
Cmos Process ◽  
Power Module ◽  
Output Stage ◽  
Driver Circuit ◽  
Gate Driver ◽  
Control Circuits ◽  
Output Stages

Abstract In this paper, the design and implementation of a gate driver in SiC CMOS process is presented for heterogeneous integration (HI) inside the commercial SiC power module. The output stage of the gate driver circuit includes four-pull up (QP 1,2,3,4) and four-pull down (QN 1,2,3,4) transistors to vary current drive strength. The output stages are driven by tri-state buffer chains that are controlled by comparator based control circuits. The driver is tested over temperature up to 300°C. At higher temperatures, the peak drive current (under full strength with no external load) increases with the output swing remaining the same. Variation of the driver’s output pull-up and pull-down stage at higher load capacitance is also discussed in this paper. The driver circuit layout is optimized to utilize the maximum die area allowed by the process. The gate driver layout is 4.8mm × 4.8mm. The bond pads and layout orientation are configured for flip-chip packaging but can also be used for wire-bonding.

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