Effect of pretreatments and drying on shrinkage and rehydration kinetics of ginger ( Zingiber officinale )

2022 ◽  
Author(s):  
Malini Buvaneswaran ◽  
Venkatachalapathy Natarajan ◽  
Chikkaballapur Krishnappa Sunil ◽  
Ashish Rawson
Keyword(s):  
Zingiber Officinale ◽  
Kinetics Of

scholarly journals Kinetic Study and Optimization of the Most Influential Factor on Batch-Extraction of Gingerol from Fresh Ginger (Zingiber officinale) Rhizomes by Using n-Hexane as a Solvent

REAKTOR ◽  
2018 ◽  
Vol 18 (03) ◽  
pp. 136
Author(s):  
Margaretha Praba Aulia ◽  
Fitra Pradhita ◽  
Andri Cahyo Kumoro ◽  
Marcelinus Christwardana ◽  
H. Hargono
Keyword(s):  
Zingiber Officinale ◽  
Extraction Process ◽  
Influential Factor ◽  
Quick Method ◽  
Ginger Rhizome ◽  
Effects Of Temperature ◽  
Kinetics Of ◽  
Influential Parameters ◽  
Optimum Extraction ◽  
Two Temperature

A solvent extraction of 6- gingerol from fresh ginger rhizome chips using n-hexane has been successfully carried out. This study aimed to investigate the effects of temperature, feed size, and feed mass on the yield of gingerol, to observe the kinetics of gingerol extraction process using n-hexane as a solvent, to find the most influential parameters in the gingerol extraction process and to determine the optimum conditions of the gingerol extraction process. The experiment was carried out for 60 minutes using two feed mass ( 50 and 75 g), two temperature (60 and 70 oC) and two chips sizes (100 and 25 mm3) using 350 mL n-hexane. The second-order kinetics model was used to study the extraction kinetic parameters. The quick method was used to evaluate the most influential extraction parameters with respect to the yield of gingerol. Feed mass was found to be the most influential parameter in the gingerol extraction process. The optimum extraction conditions were found to be at 60 °C, ginger rhizome chips with 25 mm size3, feed mass was 109.7g and 350 mL n-hexane, which resulted in crude extract with gingerol content of 517.11 ppm. 

scholarly journals Drying Kinetics Of Ginger Rhizome (Zingiber officinale)

2013 ◽  
Vol 38 (2) ◽  
pp. 301-319 ◽  
Author(s):  
MA Hoque ◽  
BK Bala ◽  
MA Hossain ◽  
M Borhan Uddin
Keyword(s):  
Thin Layer ◽  
Zingiber Officinale ◽  
Drying Kinetics ◽  
Drying Rate ◽  
Thin Layer Drying ◽  
Ginger Rhizome ◽  
Drying Models ◽  
Temperature Levels ◽  
Page Equation ◽  
Kinetics Of

This paper presents the drying kinetics of ginger rhizome under blanched and nonblanched conditions using hybrid solar dryer and mechanical tray dryer at three temperature levels. The drying rate increases with the increase in drying air temperature and blanching also increases the drying rate. The drying rate depends on shape and size of the ginger rhizomes. The highest drying rate was found for sliced samples of ginger rhizome followed by splitted and whole root samples. Five thin layer drying models were fitted to the experimental data of blanched and sliced ginger rhizomes. The Page equation was found to be the best to predict the moisture content of sliced ginger rhizome in thin layer. The agreement between the predicted and experimental results was excellent. Colour of ginger rhizomes was slightly changed after drying. Lightness of ginger rhizomes decreased with an increase in drying temperature for all samples except sliced and blanched samples. For drying of ginger rhizome, it should be sliced and blanched and dried below 70°C for better quality dried products. Bangladesh J. Agril. Res. 38(2): 301-319, June 2013 DOI: http://dx.doi.org/10.3329/bjar.v38i2.15892

Direct observations of radiation-enhanced transformations in glass

1983 ◽  
Vol 41 ◽  
pp. 354-355
Author(s):  
J. F. DeNatale ◽  
D. G. Howitt
Keyword(s):  
Glass Matrix ◽  
Diffusion Mechanism ◽  
Bubble Formation ◽  
Silicate Glasses ◽  
Phase Decomposition ◽  
Direct Observations ◽  
Thin Foils ◽  
Oxygen Bubble ◽  
Electron Energy Loss ◽  
Kinetics Of

The electron irradiation of silicate glasses containing metal cations produces various types of phase separation and decomposition which includes oxygen bubble formation at intermediate temperatures figure I. The kinetics of bubble formation are too rapid to be accounted for by oxygen diffusion but the behavior is consistent with a cation diffusion mechanism if the amount of oxygen in the bubble is not significantly different from that in the same volume of silicate glass. The formation of oxygen bubbles is often accompanied by precipitation of crystalline phases and/or amorphous phase decomposition in the regions between the bubbles and the detection of differences in oxygen concentration between the bubble and matrix by electron energy loss spectroscopy cannot be discerned (figure 2) even when the bubble occupies the majority of the foil depth.The oxygen bubbles are stable, even in the thin foils, months after irradiation and if van der Waals behavior of the interior gas is assumed an oxygen pressure of about 4000 atmospheres must be sustained for a 100 bubble if the surface tension with the glass matrix is to balance against it at intermediate temperatures.

Irradiation behavior of pyrolytic silicon carbide

1983 ◽  
Vol 41 ◽  
pp. 72-73
Author(s):  
R. J. Lauf
Keyword(s):  
Silicon Carbide ◽  
Fission Products ◽  
Thermodynamics And Kinetics ◽  
Neutron Fluences ◽  
Fuel Particles ◽  
Sic Coatings ◽  
Irradiation Behavior ◽  
Kinetics Of ◽  
Htgr Fuel

Fuel particles for the High-Temperature Gas-Cooled Reactor (HTGR) contain a layer of pyrolytic silicon carbide to act as a miniature pressure vessel and primary fission product barrier. Optimization of the SiC with respect to fuel performance involves four areas of study: (a) characterization of as-deposited SiC coatings; (b) thermodynamics and kinetics of chemical reactions between SiC and fission products; (c) irradiation behavior of SiC in the absence of fission products; and (d) combined effects of irradiation and fission products. This paper reports the behavior of SiC deposited on inert microspheres and irradiated to fast neutron fluences typical of HTGR fuel at end-of-life.

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

Investigation of irradiation-induced nucleation processes in silicon and germanium

1995 ◽  
Vol 53 ◽  
pp. 224-225
Author(s):  
Harry A. Atwater ◽  
C.M. Yang ◽  
K.V. Shcheglov
Keyword(s):  
Room Temperature ◽  
Crystal Size ◽  
Initial Distribution ◽  
Engineering Control ◽  
Size Evolution ◽  
Silicon And Germanium ◽  
Ge Quantum Dot ◽  
And Control ◽  
Germanium Quantum Dots ◽  
Kinetics Of

Studies of the initial stages of nucleation of silicon and germanium have yielded insights that point the way to achievement of engineering control over crystal size evolution at the nanometer scale. In addition to their importance in understanding fundamental issues in nucleation, these studies are relevant to efforts to (i) control the size distributions of silicon and germanium “quantum dots𠇍, which will in turn enable control of the optical properties of these materials, (ii) and control the kinetics of crystallization of amorphous silicon and germanium films on amorphous insulating substrates so as to, e.g., produce crystalline grains of essentially arbitrary size.Ge quantum dot nanocrystals with average sizes between 2 nm and 9 nm were formed by room temperature ion implantation into SiO2, followed by precipitation during thermal anneals at temperatures between 30°C and 1200°C[1]. Surprisingly, it was found that Ge nanocrystal nucleation occurs at room temperature as shown in Fig. 1, and that subsequent microstructural evolution occurred via coarsening of the initial distribution.

In situ observation of the martensitic transformation in (Mg,Y)-PSZ

1986 ◽  
Vol 44 ◽  
pp. 500-501
Author(s):  
R-R. Lee
Keyword(s):  
Martensitic Transformation ◽  
High Strength ◽  
Nucleation And Growth ◽  
In Situ Observation ◽  
Considerable Potential ◽  
Transmission Electron ◽  
Structural Applications ◽  
Applied Stresses ◽  
Kinetics Of

Partially-stabilized ZrO2 (PSZ) ceramics have considerable potential for advanced structural applications because of their high strength and toughness. These properties derive from small tetragonal ZrO2 (t-ZrO2) precipitates in a cubic (c) ZrO2 matrix, which transform martensitically to monoclinic (m) symmetry under applied stresses. The kinetics of the martensitic transformation is believed to be nucleation controlled and the nucleation is always stress induced. In situ observation of the martensitic transformation using transmission electron microscopy provides considerable information about the nucleation and growth aspects of the transformation.

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