Cooling Rate Effect on Post Cure Stresses in Molded Plastic IC Packages

1998 ◽  
Vol 120 (4) ◽  
pp. 385-390 ◽  
Author(s):  
S. Yi ◽  
K. Y. Sze
Keyword(s):  
Residual Stresses ◽  
Room Temperature ◽  
Rapid Cool ◽  
Temperature History ◽  
Finite Element Analyses ◽  
Temperature Dependent ◽  
Plastic Packages ◽  
Viscoelastic Effects ◽  
On Chip ◽  
Linear Cool

Residual stresses during cool down process after curing are evaluated on the basis of thermoviscoelastic finite element analyses with material properties dependent on both time and temperature. Temperature distributions in packages are predicted by solving the heat conduction equations. The effects of cool-down history on thermomechanical responses of a lead-on-chip (LOC), thin small outline package (TSOP) are investigated. Three linear cool down temperature histories are considered. Numerical results show that residual stresses in a LOC TSOP are significantly influenced by the manufacturing temperature history. Residual stresses in plastic packages are strongly time-temperature dependent due to the thermoviscoelastic behavior of molding compounds. Substantial residual stresses arise when a LOC TSOP has cooled to room temperature and rapid cool down permits small viscoelastic effects.

scholarly journals Simulation of Multipass Welding With Simultaneous Computation of Material Properties

2000 ◽  
Vol 123 (1) ◽  
pp. 106-111 ◽  
Author(s):  
Lars Bo¨rjesson ◽  
Lars-Erik Lindgren
Keyword(s):  
Residual Stresses ◽  
Microstructure Evolution ◽  
Material Properties ◽  
Base Material ◽  
Steel Plates ◽  
Filler Material ◽  
Temperature History ◽  
Temperature Dependent ◽  
Butt Welding ◽  
Thick Steel

Multipass butt welding of two 0.2 m thick steel plates has been investigated. The objective is to calculate residual stresses and compare them with measured residual stresses. The material properties depend on temperature and temperature history. This dependency is accounted for by computing the microstructure evolution and using this information for computing material properties. This is done by assigning temperature dependent material properties to each phase and applying mixture rules to predict macro material properties. Two different materials have been used for the microstructure calculation, one for the base material and one for the filler material.

Robustness of Residual Stresses in Brake Discs by Metamodeling

2011 ◽  
Author(s):  
M. Hofwing
Keyword(s):  
Finite Element ◽  
Residual Stresses ◽  
Finite Element Model ◽  
Robustness Analysis ◽  
Element Model ◽  
Response Surfaces ◽  
Temperature History ◽  
Brake Disc ◽  
Finite Element Analyses ◽  
Brake Discs

During casting residual stresses are developed due to the solidification and cooling. In this work the robustness of residual stresses in casted brake discs with respect to variations in four parameters is evaluated. The parameters are Young’s modulus, yield strength and hardening, time of breaking the mould and the thickness of the brake disc. The robustness analysis is performed by Monte Carlo simulations of metamodels which are surrogates to a finite element model. Quadratic response surfaces and Kriging approximations are considered. Those are based on finite element analyses defined by a Latin hypercube sampled design of experiments. In the finite element analyses an un-coupled approach is utilized where a thermal analysis generates a temperature history of the solidification and cooling. Then follows a structural analysis which is driven by the temperature history. After casting the machining of the brake disc is analyzed by gradually removing elements in the finite element model. The results show that the variation in the studied parameters yield large variation in residual stresses. The thickness of the brake disc is the parameter that has largest influence to the variation in residual stresses. Furthermore, the level of the residual stresses are in general high and might influence the fatigue life of the brake disc.

Predicting Residual Thermal Stresses in Friction Stir Welding

2003 ◽  
Author(s):  
Mir H. Zahedul Khandkar ◽  
Jamil A. Khan
Keyword(s):  
Friction Stir Welding ◽  
Residual Stresses ◽  
Thermal Model ◽  
Thermal Stresses ◽  
Three Dimensional ◽  
Welding Process ◽  
Temperature History ◽  
Temperature Dependent ◽  
Friction Stir ◽  
Input Torque

Sequentially coupled finite element models of the friction stir welding process have been proposed to study the residual stresses caused by the thermal cycles during friction stir welding of metals. This is a two step simulation process. In the first step, the thermal history is predicted from an input torque based thermal model. The temperature history generated by the thermal model is then sequentially coupled to a mechanical model that predicts the residual stresses. The model does not deal with the severe plastic deformations within the weld nugget and the thermo-mechanically affected regions, a fact that may cause modeled results to deviate from experimentally measured residual stresses. The model is three dimensional and uses temperature dependent material and thermophysical properties.

(111) Monocrystalline Nickel Films

1972 ◽  
Vol 30 ◽  
pp. 512-513
Author(s):  
T.E. Pratt ◽  
R.W. Vook
Keyword(s):  
Film Thickness ◽  
Deposition Rate ◽  
Room Temperature ◽  
Narrow Range ◽  
High Vacuum ◽  
Residual Pressure ◽  
Temperature Dependent ◽  
Deposition Parameters ◽  
Transmission Electron ◽  
Substrate Temperatures

(111) oriented thin monocrystalline Ni films have been prepared by vacuum evaporation and examined by transmission electron microscopy and electron diffraction. In high vacuum, at room temperature, a layer of NaCl was first evaporated onto a freshly air-cleaved muscovite substrate clamped to a copper block with attached heater and thermocouple. Then, at various substrate temperatures, with other parameters held within a narrow range, Ni was evaporated from a tungsten filament. It had been shown previously that similar procedures would yield monocrystalline films of CU, Ag, and Au.For the films examined with respect to temperature dependent effects, typical deposition parameters were: Ni film thickness, 500-800 A; Ni deposition rate, 10 A/sec.; residual pressure, 10-6 torr; NaCl film thickness, 250 A; and NaCl deposition rate, 10 A/sec. Some additional evaporations involved higher deposition rates and lower film thicknesses.Monocrystalline films were obtained with substrate temperatures above 500° C. Below 450° C, the films were polycrystalline with a strong (111) preferred orientation.

Temperature Dependent Line-Shape of the Silicon Dangling Bond EPR-Resonance in Polycrystalline Silicon

1996 ◽  
Vol 452 ◽  
Author(s):  
N. H. Nickel ◽  
E. A. Schiff
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Polycrystalline Silicon ◽  
Room Temperature ◽  
Dangling Bond ◽  
Temperature Dependent ◽  
Paramagnetic Resonance ◽  
Temperature Electron ◽  
Motional Narrowing ◽  
G Value ◽  
Electron Paramagnetic

AbstractThe temperature dependence of the silicon dangling-bond resonance in polycrystalline (poly-Si) and amorphous silicon (a-Si:H) was measured. At room temperature, electron paramagnetic resonance (EPR) measurements reveal an isotropie g-value of 2.0055 and a line width of 6.5 and 6.1 G for Si dangling-bonds in a-Si:H and poly-Si, respectively. In both materials spin density and g-value are independent of temperature. While in a-Si:H the width of the resonance did not change with temperature, poly-Si exhibits a remarkable T dependence of ΔHpp. In unpassivated poly-Si a pronounced decrease of ΔHpp is observed for temperatures above 300 K. At 384 K ΔHpp reaches a minimum of 5.1 G, then increases to 6.1 G at 460 K, and eventually decreases to 4.6 G at 530 K. In hydrogenated poly-Si ΔHpp decreases monotonically above 425 K. The decrease of ΔHpp is attributed to electron hopping causing motional narrowing. An average hopping distance of 15 and 17.5 Å was estimated for unhydrogenated and H passivated poly-Si, respectively.

scholarly journals Thermochromic aggregation-induced dual phosphorescence via temperature-dependent sp3-linked donor-acceptor electronic coupling

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Tao Wang ◽  
Zhubin Hu ◽  
Xiancheng Nie ◽  
Linkun Huang ◽  
Miao Hui ◽  
...  
Keyword(s):  
Excited State ◽  
Room Temperature ◽  
Electronic Coupling ◽  
Temperature Dependent ◽  
Molecular Systems ◽  
Donor And Acceptor ◽  
Theoretical Investigations ◽  
Donor Acceptor ◽  
And Control ◽  
Two Temperature

AbstractAggregation-induced emission (AIE) has proven to be a viable strategy to achieve highly efficient room temperature phosphorescence (RTP) in bulk by restricting molecular motions. Here, we show that by utilizing triphenylamine (TPA) as an electronic donor that connects to an acceptor via an sp3 linker, six TPA-based AIE-active RTP luminophores were obtained. Distinct dual phosphorescence bands emitting from largely localized donor and acceptor triplet emitting states could be recorded at lowered temperatures; at room temperature, only a merged RTP band is present. Theoretical investigations reveal that the two temperature-dependent phosphorescence bands both originate from local/global minima from the lowest triplet excited state (T1). The reported molecular construct serves as an intermediary case between a fully conjugated donor-acceptor system and a donor/acceptor binary mix, which may provide important clues on the design and control of high-freedom molecular systems with complex excited-state dynamics.

scholarly journals Local ferroelectric polarization switching driven by nanoscale distortions in thermoelectric $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Aastha Vasdev ◽  
Moinak Dutta ◽  
Shivam Mishra ◽  
Veerpal Kaur ◽  
Harleen Kaur ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Lattice Thermal Conductivity ◽  
Direct Evidence ◽  
Temperature Dependent ◽  
Force Microscopy ◽  
Ferroelectric Domains ◽  
Pdf Analysis ◽  
Ferroelectric Transition Temperature

AbstractA remarkable decrease in the lattice thermal conductivity and enhancement of thermoelectric figure of merit were recently observed in rock-salt cubic SnTe, when doped with germanium (Ge). Primarily, based on theoretical analysis, the decrease in lattice thermal conductivity was attributed to local ferroelectric fluctuations induced softening of the optical phonons which may strongly scatter the heat carrying acoustic phonons. Although the previous structural analysis indicated that the local ferroelectric transition temperature would be near room temperature in $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$ Sn 0.7 Ge 0.3 Te , a direct evidence of local ferroelectricity remained elusive. Here we report a direct evidence of local nanoscale ferroelectric domains and their switching in $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$ Sn 0.7 Ge 0.3 Te using piezoeresponse force microscopy(PFM) and switching spectroscopy over a range of temperatures near the room temperature. From temperature dependent (250–300 K) synchrotron X-ray pair distribution function (PDF) analysis, we show the presence of local off-centering distortion of Ge along the rhombohedral direction in global cubic $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$ Sn 0.7 Ge 0.3 Te . The length scale of the $${\text {Ge}}^{2+}$$ Ge 2 + off-centering is 0.25–0.10 Å near the room temperatures (250–300 K). This local emphatic behaviour of cation is the cause for the observed local ferroelectric instability, thereby low lattice thermal conductivity in $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$ Sn 0.7 Ge 0.3 Te .

Atomistic prediction on the configuration- and temperature-dependent dielectric constant of Be0.25Mg0.75O superlattice as a high-κ dielectric layer

2021 ◽  
Author(s):  
Gyuseung Han ◽  
In Won Yeu ◽  
Kun Hee Ye ◽  
Seung-Cheol Lee ◽  
Cheol Seong Hwang ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dft Calculations ◽  
Bond Length ◽  
Dielectric Layer ◽  
Room Temperature ◽  
High Dielectric Constant ◽  
Temperature Dependent ◽  
High Dielectric

Through DFT calculations, a Be0.25Mg0.75O superlattice having long apical Be–O bond length is proposed to have a high bandgap (>7.3 eV) and high dielectric constant (∼18) at room temperature and above.

Temperature-induced structural phase transitions in RERhSn (RE = Y, Gd-Tm, Lu)

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Simon Engelbert ◽  
Rolf-Dieter Hoffmann ◽  
Jutta Kösters ◽  
Steffen Klenner ◽  
Rainer Pöttgen
Keyword(s):  
Rare Earth ◽  
Phase Transitions ◽  
Driving Force ◽  
Room Temperature ◽  
Structural Phase ◽  
Structural Phase Transitions ◽  
Line Broadening ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
X Ray

Abstract The structures of the equiatomic stannides RERhSn with the smaller rare earth elements Y, Gd-Tm and Lu were reinvestigated on the basis of temperature-dependent single crystal X-ray diffraction data. GdRhSn crystallizes with the aristotype ZrNiAl at 293 and 90 K. For RE = Y, Tb, Ho and Er the HP-CeRuSn type (approximant with space group R3m) is already formed at room temperature, while DyRhSn adopts the HP-CeRuSn type below 280 K. TmRhSn and LuRhSn show incommensurate modulated variants with superspace groups P31m(1/3; 1/3; γ) 000 (No. 157.1.23.1) (γ = 3/8 for TmRhSn and γ = 2/5 for LuRhSn). The driving force for superstructure formation (modulation) is a strengthening of Rh–Sn bonding. The modulation is expressed in a 119Sn Mössbauer spectrum of DyRhSn at 78 K through line broadening.

scholarly journals Roadmap of Terahertz Imaging 2021

Sensors ◽  
2021 ◽  
Vol 21 (12) ◽  
pp. 4092
Author(s):  
Gintaras Valušis ◽  
Alvydas Lisauskas ◽  
Hui Yuan ◽  
Wojciech Knap ◽  
Hartmut G. Roskos
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Computational Imaging ◽  
Imaging Systems ◽  
Thz Imaging ◽  
Operational Conditions ◽  
Frequency Combs ◽  
Wave Imaging ◽  
On Chip ◽  
Nano Imaging

In this roadmap article, we have focused on the most recent advances in terahertz (THz) imaging with particular attention paid to the optimization and miniaturization of the THz imaging systems. Such systems entail enhanced functionality, reduced power consumption, and increased convenience, thus being geared toward the implementation of THz imaging systems in real operational conditions. The article will touch upon the advanced solid-state-based THz imaging systems, including room temperature THz sensors and arrays, as well as their on-chip integration with diffractive THz optical components. We will cover the current-state of compact room temperature THz emission sources, both optolectronic and electrically driven; particular emphasis is attributed to the beam-forming role in THz imaging, THz holography and spatial filtering, THz nano-imaging, and computational imaging. A number of advanced THz techniques, such as light-field THz imaging, homodyne spectroscopy, and phase sensitive spectrometry, THz modulated continuous wave imaging, room temperature THz frequency combs, and passive THz imaging, as well as the use of artificial intelligence in THz data processing and optics development, will be reviewed. This roadmap presents a structured snapshot of current advances in THz imaging as of 2021 and provides an opinion on contemporary scientific and technological challenges in this field, as well as extrapolations of possible further evolution in THz imaging.

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