Strain and Photovoltaic Sensitivities of Dumbbell-Shape GNR-Base Sensors

2019 ◽  
Author(s):  
Jowesh Avisheik Goundar ◽  
Takuya Kudo ◽  
Qinqiang Zhang ◽  
Ken Suzuki ◽  
Hideo Miura
Keyword(s):  
Vapor Deposition ◽  
Tensile Strain ◽  
Incident Light ◽  
Chemical Vapor ◽  
Strain Sensors ◽  
Gauge Factor ◽  
Uniaxial Tensile ◽  
Incident Light Intensity ◽  
Highly Sensitive ◽  
Electronic Behavior

Abstract The area-arrayed dumbbell-shape Graphene Nano-Ribbons (GNRs) were fabricated by using chemical vapor deposition and photolithography technologies. The electronic behavior of the fabricated GNR-FET structure was evaluated for its photonic properties with an incident light intensity of 1-mW. The 200-nm wide GNRs structure showed metallic properties, while those with the width of 40 nm showed semiconductive properties as was expected. The light-induced photocurrent was observed in all the fabricated GNRs structures. The average photocurrent observed in the 2-mm wide graphene structure was 3.3 A/m2 and that observed in the 40-nm wide area-arrayed GNRs structure was 261 A/m2, respectively. Based on this photocurrent, the external photosensitivity of the 40-nm wide GNRs structure was about 2.6 × 105 A/W.m2 and this value was much larger than that of conventional Si-base solar cells. In addition, the effect of strain on the resistivity of GNRs was measured. Uniaxial tensile strain was applied to the area-arrayed GNRs structures with the width from 200 nm to 40 nm. The gauge factor obtained from the GNRs with the width wider than 100 nm was about 3, and that with the width of 40 nm was about 160. Therefore, highly-sensitive strain sensors can be realized by using GNRs thinner than 70 nm.

scholarly journals Easy Fabrication of Performant SWCNT-Si Photodetector

Electronics ◽  
2022 ◽  
Vol 11 (2) ◽  
pp. 271
Author(s):  
Daniele Capista ◽  
Maurizio Passacantando ◽  
Luca Lozzi ◽  
Enver Faella ◽  
Filippo Giubileo ◽  
...  
Keyword(s):  
Thermal Stress ◽  
Carbon Nanotube ◽  
Light Intensity ◽  
Vapor Deposition ◽  
Incident Light ◽  
Chemical Vapor ◽  
Visible Range ◽  
Sensitive Area ◽  
Incident Light Intensity ◽  
Simple Method

We propose a simple method to fabricate a photodetector based on the carbon nanotube/silicon nitride/silicon (CNT/Si3N4/Si) heterojunction. The device is obtained by depositing a freestanding single-wall carbon nanotube (SWCNT) film on a silicon substrate using a dry transfer technique. The SWCNT/Si3N4/Si heterojunction is formed without the thermal stress of chemical vapor deposition used for the growth of CNTs in other approaches. The CNT film works as a transparent charge collecting electrode and guarantees a uniform photocurrent across the sensitive area of the device. The obtained photodetector shows a great photocurrent that increases linearly with the incident light intensity and grows with the increasing wavelength in the visible range. The external quantum efficiency is independent of the light intensity and increases with the wavelength, reaching 65% at 640 nm.

scholarly journals Development of Highly Sensitive Strain Sensor Using Area-Arrayed Graphene Nanoribbons

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1701
Author(s):  
Ken Suzuki ◽  
Ryohei Nakagawa ◽  
Qinqiang Zhang ◽  
Hideo Miura
Keyword(s):  
Graphene Nanoribbons ◽  
Strain Sensor ◽  
Strain Sensors ◽  
Sensitive Strain ◽  
Bending Test ◽  
Gauge Factor ◽  
Four Point Bending ◽  
Current Voltage ◽  
Highly Sensitive ◽  
Current Voltage Relationship

In this study, a basic design of area-arrayed graphene nanoribbon (GNR) strain sensors was proposed to realize the next generation of strain sensors. To fabricate the area-arrayed GNRs, a top-down approach was employed, in which GNRs were cut out from a large graphene sheet using an electron beam lithography technique. GNRs with widths of 400 nm, 300 nm, 200 nm, and 50 nm were fabricated, and their current-voltage characteristics were evaluated. The current values of GNRs with widths of 200 nm and above increased linearly with increasing applied voltage, indicating that these GNRs were metallic conductors and a good ohmic junction was formed between graphene and the electrode. There were two types of GNRs with a width of 50 nm, one with a linear current–voltage relationship and the other with a nonlinear one. We evaluated the strain sensitivity of the 50 nm GNR exhibiting metallic conduction by applying a four-point bending test, and found that the gauge factor of this GNR was about 50. Thus, GNRs with a width of about 50 nm can be used to realize a highly sensitive strain sensor.

Synthesis of single-crystalline GeS nanoribbons for high sensitivity visible-light photodetectors

2015 ◽  
Vol 3 (31) ◽  
pp. 8074-8079 ◽  
Author(s):  
Changyong Lan ◽  
Chun Li ◽  
Yi Yin ◽  
Huayang Guo ◽  
Shuai Wang
Keyword(s):  
Visible Light ◽  
Vapor Deposition ◽  
High Performance ◽  
Incident Light ◽  
Chemical Vapor ◽  
High Sensitivity ◽  
Single Crystalline ◽  
Promising Application ◽  
Photo Detection ◽  
First Time

Single-crystalline GeS nanoribbons were synthesized by chemical vapor deposition for the first time. The nanoribbon photodetectors respond to the entire visible incident light with a response edge at around 750 nm and a high responsivity, indicating their promising application for high performance broadband visible-light photo-detection.

Area-Arrayed Graphene Nano-Ribbon-Base Strain Sensor

2018 ◽  
Author(s):  
Ryohei Nakagawa ◽  
Zhi Wang ◽  
Ken Suzuki
Keyword(s):  
Chemical Vapor Deposition ◽  
Stress Concentration ◽  
Health Monitoring ◽  
Vapor Deposition ◽  
Strain Sensor ◽  
Chemical Vapor ◽  
High Sensitivity ◽  
Strain Sensors ◽  
Chemical Vapor Deposition Method ◽  
High Quality

Health monitoring devices using a strain sensor, which shows high sensitivity and large deformability, are strongly demanded due to further aging of society with fewer children. Conventional strain sensors, such as metallic strain gauges and semiconductive strain sensors, however, aren’t applicable to health monitoring because of their low sensitivity and deformability. In this study, fundamental design of area-arrayed graphene nano-ribbon (GNR) strain senor was proposed in order to fabricate next-generation strain sensor. The sensor was consisted of two sections, which are stress concentration section and stress detecting section. This structure can take full advantage of GNR’s properties. Moreover, high quality GNR fabrication process, which is one of the important process in the sensor, was developed by applying CVD (Chemical Vapor Deposition) method. Top-down approach was applied to fabricate the GNR. At first, in order to synthesize a high-quality graphene sheet, acetylene-based LPCVD (low pressure chemical vapor deposition) using a closed Cu foil was employed. After that, graphene was transferred silicon substrate and the quality was evaluated. The high quality graphene was transferred on the soft PDMS substrate and metallic electrodes were fabricated by applying MEMS technology. Area-arrayed fine pin structure was fabricated by using hard PDMS as a stress-concentration section. Finally, both sections were integrated to form a highly sensitive and large deformable pressure sensor. The strain sensitivity of the GNR-base sensor was also evaluated.

scholarly journals Flexibility of Fluorinated Graphene-Based Materials

Materials ◽  
2020 ◽  
Vol 13 (5) ◽  
pp. 1032 ◽  
Author(s):  
Irina Antonova ◽  
Nadezhda Nebogatikova ◽  
Nabila Zerrouki ◽  
Irina Kurkina ◽  
Artem Ivanov
Keyword(s):  
Chemical Vapor Deposition ◽  
Polyvinyl Alcohol ◽  
Vapor Deposition ◽  
Tensile Strain ◽  
Flexible Substrate ◽  
Chemical Vapor ◽  
Multilayer Graphene ◽  
Current Ratio ◽  
Bending Radius ◽  
Fluorinated Graphene

The resistivity of different films and structures containing fluorinated graphene (FG) flakes and chemical vapor deposition (CVD)-grown graphene of various fluorination degrees under tensile and compressive strains due to bending deformations was studied. Graphene and multilayer graphene films grown by means of the chemical vapor deposition (CVD) method were transferred onto the flexible substrate by laminating and were subjected to fluorination. They demonstrated a weak fluorination degree (F/C lower 20%). Compressive strains led to a strong (one-two orders of magnitude) decrease in the resistivity in both cases, which was most likely connected with the formation of additional conductive paths through fluorinated graphene. Tensile strain up to 3% caused by the bending of both types of CVD-grown FG led to a constant value of the resistivity or to an irreversible increase in the resistivity under repeated strain cycles. FG films created from the suspension of the fluorinated graphene with a fluorination degree of 20–25%, after the exclusion of design details of the used structures, demonstrated a stable resistivity at least up to 2–3% of tensile and compressive strain. The scale of resistance changes ΔR/R0 was found to be in the range of 14–28% with a different sign at the 10% tensile strain (bending radius 1 mm). In the case of the structures with the FG thin film printed on polyvinyl alcohol, a stable bipolar resistive switching was observed up to 6.5% of the tensile strain (bending radius was 2 mm). A further increase in strain (6.5–8%) leads to a decrease in ON/OFF current ratio from 5 down to 2 orders of magnitude. The current ratio decrease is connected with an increase under the tensile strain in distances between conductive agents (graphene islands and traps at the interface with polyvinyl alcohol) and thickness of fluorinated barriers within the active layer. The excellent performance of the crossbar memristor structures under tensile strain shows that the FG films and structures created from suspension are especially promising for flexible electronics.

scholarly journals Enhanced Stretchable and Sensitive Strain Sensor via Controlled Strain Distribution

Nanomaterials ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 218 ◽  
Author(s):  
Huamin Chen ◽  
Longfeng Lv ◽  
Jiushuang Zhang ◽  
Shaochun Zhang ◽  
Pengjun Xu ◽  
...  
Keyword(s):  
Strain Distribution ◽  
Tensile Strain ◽  
Strain Sensor ◽  
Gauge Factor ◽  
Simple Method ◽  
Practical Applications ◽  
Simple Strategy ◽  
Highly Sensitive ◽  
Highly Stretchable ◽  
Maximum Tensile Strain

Stretchable and wearable opto-electronics have attracted worldwide attention due to their broad prospects in health monitoring and epidermal applications. Resistive strain sensors, as one of the most typical and important device, have been the subject of great improvements in sensitivity and stretchability. Nevertheless, it is hard to take both sensitivity and stretchability into consideration for practical applications. Herein, we demonstrated a simple strategy to construct a highly sensitive and stretchable graphene-based strain sensor. According to the strain distribution in the simulation result, highly sensitive planar graphene and highly stretchable crumpled graphene (CG) were rationally connected to effectively modulate the sensitivity and stretchability of the device. For the stretching mode, the device showed a gauge factor (GF) of 20.1 with 105% tensile strain. The sensitivity of the device was relatively high in this large working range, and the device could endure a maximum tensile strain of 135% with a GF of 337.8. In addition, in the bending mode, the device could work in outward and inward modes. This work introduced a novel and simple method with which to effectively monitor sensitivity and stretchability at the same time. More importantly, the method could be applied to other material categories to further improve the performance.

Electrical Resistance of Single-Wall Carbon Nanotubes with Determined Chiral Indices

2009 ◽  
Vol 1204 ◽  
Author(s):  
Letian Lin ◽  
Lu-Chang Qin ◽  
Sean Washburn ◽  
Scott Paulson
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Vapor Deposition ◽  
Electrical Resistance ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Single Wall Carbon Nanotubes ◽  
Single Wall Carbon ◽  
Transmission Electron ◽  
Highly Sensitive

AbstractThe properties of a carbon nanotube (CNT), in particular a single-wall carbon nanotube (SWNT), are highly sensitive to the atomic structure of the nanotube described by its chirality (chiral indices). We have grown isolated SWNTs on a silicon substrate using chemical vapor deposition (CVD) and patterned sub-micron probes using electron beam lithography. The SWNT was exposed by etching the underlying substrate for transmission electron microscope (TEM) imaging and diffraction studies. For each individual SWNT, its electrical resistance was measured by the four-probe method at room temperature and the chiral indices of the same SWNT were determined by nano-beam electron diffraction. The contact resistances were reduced by annealing to typically 3-5 kΩ. We have measured the I-V curve and determined the chiral indices of each nanotube individually from four SWNTs selected randomly – two are metallic and two are semiconducting. We will present the electrical resistances in correlation with the carbon nanotube diameter as well as the band gap calculated from the determined chiral indices for the semiconducting carbon nanotubes. These experimental results are also discussed in connection with theoretical estimations.

Ultra-stretchable and highly sensitive strain sensor based on gradient structure carbon nanotubes

Nanoscale ◽  
2018 ◽  
Vol 10 (28) ◽  
pp. 13599-13606 ◽  
Author(s):  
Binghao Liang ◽  
Zhiqiang Lin ◽  
Wenjun Chen ◽  
Zhongfu He ◽  
Jing Zhong ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Strain Sensor ◽  
High Sensitivity ◽  
Strain Sensors ◽  
Sensitive Strain ◽  
Gauge Factor ◽  
Gradient Structure ◽  
Highly Sensitive ◽  
Highly Stretchable

A highly stretchable and sensitive strain sensor based on a gradient carbon nanotube was developed. The strain sensors show an unprecedented combination of both high sensitivity (gauge factor = 13.5) and ultra-stretchability (>550%).

scholarly journals Waterproof Graphene-PVDF Wearable Strain Sensors for Movement Detection in Smart Gloves

Sensors ◽  
2021 ◽  
Vol 21 (16) ◽  
pp. 5277
Author(s):  
Hossein Cheraghi Bidsorkhi ◽  
Alessandro Giuseppe D’Aloia ◽  
Alessio Tamburrano ◽  
Giovanni De Bellis ◽  
Maria Sabrina Sarto
Keyword(s):  
Polyvinylidene Fluoride ◽  
Index Finger ◽  
Wearable Sensors ◽  
Proximal Interphalangeal Joint ◽  
Interphalangeal Joint ◽  
Strain Sensors ◽  
Nanocomposite Films ◽  
Gauge Factor ◽  
Movement Detection ◽  
Highly Sensitive

In this work, new highly sensitive graphene-based flexible strain sensors are produced. In particular, polyvinylidene fluoride (PVDF) nanocomposite films filled with different amounts of graphene nanoplatelets (GNPs) are produced and their application as wearable sensors for strain and movement detection is assessed. The produced nanocomposite films are morphologically characterized and their waterproofness, electrical and mechanical properties are measured. Furthermore, their electromechanical features are investigated, under both stationary and dynamic conditions. In particular, the strain sensors show a consistent and reproducible response to the applied deformation and a Gauge factor around 30 is measured for the 1% wt loaded PVDF/GNP nanocomposite film when a deformation of 1.5% is applied. The produced specimens are then integrated in commercial gloves, in order to realize sensorized gloves able to detect even small proximal interphalangeal joint movements of the index finger.

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