Investigation of the optimal annealing temperature for the enhanced thermoelectric properties of MOCVD-grown ZnO films

N-doped ZnO films were deposited on Si (100) substrates by radio frequency (RF) magnetron sputtering in N2/Ar2 gas mixture. After the deposition, the films were post-annealed in vacuum at several temperatures from 400°C to 850°C for 60 minutes respectively.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO films following post-annealing. When the annealing temperature is higher than 650°C achieved by the n-type ZnO to the p-type transition and for the better growth of p-type ZnO films, the optimal annealing temperature is 650°C.

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Corrigendum to ‟Effect of annealing temperature on thermoelectric properties of zinc nitride thin films grown by thermal evaporation method” [Ceram. Int. 46 (2020) 25992–25995]

Ceramics International ◽

10.1016/j.ceramint.2021.04.288 ◽

2021 ◽

Author(s):

Hassnain Zaman ◽

Jolly Jacob ◽

Khurram Mehboob ◽

K. Mahmood ◽

U. Rehman ◽

...

Keyword(s):

Thin Films ◽

Thermoelectric Properties ◽

Annealing Temperature ◽

Thermal Evaporation ◽

Thermal Evaporation Method ◽

Evaporation Method ◽

Zinc Nitride

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Влияние температуры фотонного отжига на структурные и оптические свойства пленок ZnO, синтезированных методом дуального магнетронного распыления

Физика и техника полупроводников ◽

10.21883/ftp.2019.02.47111.8933 ◽

2019 ◽

Vol 53 (2) ◽

pp. 267

Author(s):

С.В. Зайцев ◽

В.С. Ващилин ◽

В.В. Колесник ◽

М.В. Лимаренко ◽

Д.С. Прохоренков ◽

...

Keyword(s):

Electron Microscopy ◽

Crystallite Size ◽

Annealing Temperature ◽

Optical Transmittance ◽

Degree Of Crystallinity ◽

Zno Films ◽

Gas Atmosphere ◽

Oxygen Gas ◽

Microstructure Density ◽

The Degree Of Crystallinity

AbstractZinc-oxide films 1.4 μm in thickness are deposited onto glassy substrates by the dual magnetron-assisted sputtering of zinc targets in an argon and oxygen gas atmosphere. The dependences of the structural and optical characteristics of the ZnO films on the temperature of postdeposition photonic annealing are studied. It is established that an increase in the annealing temperature yields an increase in the degree of crystallinity of the films. Electron microscopy shows that the deposited ZnO coatings are columnar in structure and the microstructure density and crystallite size increase upon annealing. It is found that, at an annealing temperature of 450–650°C, the optical transmittance increases to >90% in the spectral range 400–1100 nm. The experimental results show that the temperature of vacuum photonic annealing has the most profound effect on the final properties of ZnO coatings.

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Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

Molecules ◽

10.3390/molecules25215043 ◽

2020 ◽

Vol 25 (21) ◽

pp. 5043

Author(s):

Chia-Hsun Hsu ◽

Xin-Peng Geng ◽

Wan-Yu Wu ◽

Ming-Jie Zhao ◽

Xiao-Ying Zhang ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Band Gap ◽

Photoelectron Spectroscopy ◽

High Speed ◽

Oxygen Vacancies ◽

Annealing Temperature ◽

Atomic Layer ◽

Zno Films ◽

X Ray ◽

Layer Deposition

In this study, aluminum-doped zinc oxide (Al:ZnO) thin films were grown by high-speed atmospheric atomic layer deposition (AALD), and the effects of air annealing on film properties are investigated. The experimental results show that the thermal annealing can significantly reduce the amount of oxygen vacancies defects as evidenced by X-ray photoelectron spectroscopy spectra due to the in-diffusion of oxygen from air to the films. As shown by X-ray diffraction, the annealing repairs the crystalline structure and releases the stress. The absorption coefficient of the films increases with the annealing temperature due to the increased density. The annealing temperature reaching 600 °C leads to relatively significant changes in grain size and band gap. From the results of band gap and Hall-effect measurements, the annealing temperature lower than 600 °C reduces the oxygen vacancies defects acting as shallow donors, while it is suspected that the annealing temperature higher than 600 °C can further remove the oxygen defects introduced mid-gap states.

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Effect of annealing temperature on optical properties of Er-doped ZnO films prepared by sol–gel method

Materials Science and Engineering B ◽

10.1016/j.mseb.2007.09.029 ◽

2008 ◽

Vol 148 (1-3) ◽

pp. 35-39 ◽

Cited By ~ 43

Author(s):

Fanyong Ran ◽

Lei Miao ◽

Sakae Tanemura ◽

Masaki Tanemura ◽

Yongge Cao ◽

...

Keyword(s):

Optical Properties ◽

Annealing Temperature ◽

Sol Gel ◽

Zno Films ◽

Gel Method ◽

Sol Gel Method ◽

Doped Zno ◽

Er Doped

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Annealing Effect on the Thermoelectric Properties of Bi2Te3Thin Films Prepared by Thermal Evaporation Method

Journal of Nanomaterials ◽

10.1155/2013/201017 ◽

2013 ◽

Vol 2013 ◽

pp. 1-6 ◽

Cited By ~ 8

Author(s):

Jyun-Min Lin ◽

Ying-Chung Chen ◽

Chi-Pi Lin

Keyword(s):

Thin Films ◽

Seebeck Coefficient ◽

Thermoelectric Properties ◽

Power Factor ◽

Room Temperature ◽

Annealing Temperature ◽

Thermal Evaporation ◽

Thermal Evaporation Method ◽

Si Substrates ◽

Seebeck Coefficients

Bismuth telluride-based compounds are known to be the best thermoelectric materials within room temperature region, which exhibit potential applications in cooler or power generation. In this paper, thermal evaporation processes were adopted to fabricate the n-type Bi2Te3thin films on SiO2/Si substrates. The influence of thermal annealing on the microstructures and thermoelectric properties of Bi2Te3thin films was investigated in temperature range 100–250°C. The crystalline structures and morphologies were characterized by X-ray diffraction and field emission scanning electron microscope analyses. The Seebeck coefficients, electrical conductivity, and power factor were measured at room temperature. The experimental results showed that both the Seebeck coefficient and power factor were enhanced as the annealing temperature increased. When the annealing temperature increased to 250°C for 30 min, the Seebeck coefficient and power factor of n-type Bi2Te3-based thin films were found to be about −132.02 μV/K and 6.05 μW/cm·K2, respectively.

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Effect of annealing temperature on photoluminescence spectra, gap states using different models and optical dispersion parameters in copper-doped ZnO films

Molecular Simulation ◽

10.1080/08927022.2020.1856839 ◽

2020 ◽

Vol 46 (18) ◽

pp. 1542-1549

Author(s):

Vali Dalouji ◽

Pouria Abbasi ◽

Nasim Rahimi

Keyword(s):

Annealing Temperature ◽

Zno Films ◽

Photoluminescence Spectra ◽

Dispersion Parameters ◽

Optical Dispersion ◽

Doped Zno ◽

Optical Dispersion Parameters ◽

Gap States

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Suppression of Oxygen Vacancy Defects in sALD-ZnO Films Annealed in Different Conditions

Materials ◽

10.3390/ma13183910 ◽

2020 ◽

Vol 13 (18) ◽

pp. 3910

Author(s):

Ming-Jie Zhao ◽

Zhi-Tao Sun ◽

Zhi-Xuan Zhang ◽

Xin-Peng Geng ◽

Wan-Yu Wu ◽

...

Keyword(s):

Oxygen Vacancy ◽

Carrier Concentration ◽

Photoelectron Spectroscopy ◽

Annealing Temperature ◽

Atomic Layer ◽

Zno Films ◽

High Deposition Rate ◽

Xps Spectra ◽

Vacancy Defects ◽

X Ray

Zinc oxide (ZnO) has drawn much attention due to its excellent optical and electrical properties. In this study, ZnO film was prepared by a high-deposition-rate spatial atomic layer deposition (ALD) and subjected to a post-annealing process to suppress the intrinsic defects and improve the crystallinity and film properties. The results show that the film thickness increases with annealing temperature owing to the increment of oxide layer caused by the suppression of oxygen vacancy defects as indicated by the X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) spectra. The film transmittance is seldom influenced by annealing. The refractive index increases with annealing temperature at 300–700 °C, possibly due to higher density and crystallinity of the film. The band gap decreases after annealing, which should be ascribed to the decrease in carrier concentration according to Burstein–Moss model. The carrier concentration decreases with increasing annealing temperature at 300–700 °C since the oxygen vacancy defects are suppressed, then it increases at 800 °C possibly due to the out-diffusion of oxygen atoms from the film. Meanwhile, the carrier mobility increases with temperature due to higher crystallinity and larger crystallite size. The film resistivity increases at 300–700 °C then decreases at 800 °C, which should be ascribed primarily to the variation of carrier concentration.

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Photocatalytic Properties of ZnO and Ag Doped ZnO Thin Films

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.685.3 ◽

2014 ◽

Vol 685 ◽

pp. 3-6

Author(s):

Ying Lian Wang ◽

Jun Yao Ye

Keyword(s):

Thin Films ◽

Annealing Temperature ◽

Sol Gel ◽

Structural Features ◽

Photocatalytic Properties ◽

Zno Thin Films ◽

Molar Ratio ◽

Zno Films ◽

Doped Zno ◽

Excellent Adhesion

Pure ZnO thin films and Ag doped ZnO thin films were prepared on quartz substrates by sol-gel process. Structural features and UV absorption spectrum have been studied by XRD and UV-Vis-Nir scanning spectrophotometer. Taking phenol as pollutants, further study of the effect of different annealing temperature and Ag dopant amount of ZnO films on photocatalytic properties was carried out. The results showed that, the optimal annealing temperature on photocatalytic degradation of phenol in this experiment was 300 °C, the best molar ratio of ZnO and Ag was 30:1, which was better than pure ZnO film greatly. Excellent adhesion, recyclable and efficient degradation Ag doped ZnO thin films were found in this experiment.

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