A STUDY ON THE INDIUM-INDUCED VARIATIONS IN PHOTOLUMINESCENCE PROPERTIES OF INDIUM-DOPED ZINCOXIDE NANORODS

2009 ◽  
Vol 08 (01n02) ◽  
pp. 137-145 ◽  
Author(s):  
M. N. JUNG ◽  
J. E. KOO ◽  
J. H. CHANG ◽  
T.-I. JEON ◽  
W. J. LEE ◽  
...  
Keyword(s):  
Zno Nanorods ◽  
Peak Position ◽  
Excitation Power ◽  
Optical Quality ◽  
Structural Quality ◽  
In Doping ◽  
Induced Changes ◽  
Relationship Of ◽  
Good Optical Quality

In doped ZnO nanorods ( ZnO : In NRs) were grown on Si (111) substrates by using AuGe as a catalyst. In-concentration was controlled as high as 0.33 at.%. The length L to diameter D relationship of NRs revealed that the growth mechanism should be explained in terms of not a simple vapor–liquid–solid (VLS) mechanism but a diffusion-induced growth model. In-induced changes have been investigated from the viewpoint of photoluminescence (PL) property. At room temperature, an increase of extrinsic carrier concentration and interaction with excitons were estimated from the blueshift of peak position and decrease of luminescence intensity. Also, narrow linewidth of low-temperature PL spectra characterized the high structural quality of ZnO : In NRs. We have assigned several PL lines and confirmed the assignment by using excitation power and temperature dependence PL. Considerable evidence of crystal quality degradation was not observed from both measurements; however, we could observe that a defect and donor-bound-exciton complex dominate the PL spectrum. ZnO : In NRs shows good optical quality within our experimental range, and this result strongly supports the feasibility of In -doping to enhance the electrical property of ZnO -based nanostructure.

Low temperature wet chemical synthesis of good optical quality vertically aligned crystalline ZnO nanorods

2007 ◽  
Vol 18 (3) ◽  
pp. 035606 ◽  
Author(s):  
T Mahalingam ◽  
Kyung Moon Lee ◽  
Kyung Ho Park ◽  
Soonil Lee ◽  
Yeonghwan Ahn ◽  
...  
Keyword(s):  
Low Temperature ◽  
Chemical Synthesis ◽  
Zno Nanorods ◽  
Optical Quality ◽  
Wet Chemical Synthesis ◽  
Vertically Aligned ◽  
Wet Chemical ◽  
Good Optical Quality

Optical Properties of Doped Cd1−xMnxTe

1986 ◽  
Vol 89 ◽  
Author(s):  
Y. Lansari ◽  
N. C. Giles ◽  
J. F. Schetzina ◽  
P. Becia ◽  
D. Kaiser
Keyword(s):  
Optical Properties ◽  
Low Temperature ◽  
Spectral Range ◽  
Room Temperature ◽  
Far Infrared ◽  
Optical Quality ◽  
Structural Quality ◽  
Reflectance Measurements ◽  
Low Temperature Photoluminescence

AbstractThe introduction of phosphorus and arsenic dopants into bulk Cd1−xMnx Te crystals grown by the Bridgman-Stockbarger technique has been studieA-with respect to the resulting optical properties. Samples with a Mn composition in the range 0.10 < x < 0.30, both as-grown and annealed, were investigated. A combination of room temperature transmittance and reflectance measurements over the spectral range from the ultraviolet to the far infrared has been used to gain information concerning the structural quality of the samples. Low temperature photoluminescence measurements (1.6−5 K) were used to determine optical quality and excitonic energies.

scholarly journals III-V nanowires with quantum dots: MBE growth and properties

2021 ◽  
Vol 2015 (1) ◽  
pp. 012124
Author(s):  
R R Reznik ◽  
K P Kotlyar ◽  
V O Gridchin ◽  
I V Ilkiv ◽  
A I Khrebtov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Optoelectronic Devices ◽  
Optical Quality ◽  
Silicon Substrates ◽  
Single Photons ◽  
Mbe Growth ◽  
Pl Spectrum ◽  
Good Optical Quality

Abstract We demonstrate growth of AlGaAs NWs with GaAs QDs and InP NWs with InAsP QDs on silicon substrates. Results of GaAs QDs optical properties study have shown that these objects are sources of single photons. In case of InP NWs with InAsP QDs, the results showed that ~ 100% of homogeneously oriented NWs were formed with good optical quality of this system on a Si(111). PL spectrum peak near 1.3 μm indicates that such system is promising for optoelectronic devices.

Growth of Well-Aligned ZnO Nanorods Using AuGe Catalyst by Vapor Phase Transportation

2006 ◽  
Vol 6 (11) ◽  
pp. 3624-3627
Author(s):  
S. Y. Ha ◽  
M. N. Jung ◽  
S. H. Park ◽  
H. J. Ko ◽  
H. Ko ◽  
...  
Keyword(s):  
Deep Level ◽  
Zno Nanorods ◽  
Horizontal Tube ◽  
Deep Level Emission ◽  
Structural Quality ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Uv Emission ◽  
Tilting Angle

Well-aligned ZnO nanorods have been achieved using new alloy (AuGe) catalyst. Zn powder was used as a source material and it was transported in a horizontal tube furnace onto an AuGe deposited Si substrates. The structural and optical properties of ZnO nanorods were characterized by scanning electron microscopy, high resolution X-ray diffraction, and photoluminescence. ZnO nanorods grown at 650 °C on 53 nm thick AuGe layer show uniform shape with the length of 8±0.5 μm and the diameter of 150±5 nm. Also, the tilting angle of ZnO nanorods (±5.5°) is confirmed by HRXRD. High structural quality of the nanorods is conformed by the photoluminescence measurement. All samples show strong UV emission without considerable deep level emission. However, weak deep level emission appears at high (700 °C) temperature due to the increase of oxygen desertion.

Improvement of the Structural Quality of GaAs Layers Grown on Si with LT-GaAs Intermediate Layer

1993 ◽  
Vol 325 ◽  
Author(s):  
Zuzanna Liliental Weber ◽  
H. Fujioka ◽  
H. Sohn ◽  
E.R. Weber
Keyword(s):  
Schottky Diodes ◽  
Gaas Layer ◽  
Optical Quality ◽  
Structural Quality ◽  
Photoluminescence Intensity ◽  
Dislocation Interaction ◽  
Gaas Buffer Layer ◽  
Order Of Magnitude ◽  
Lt Gaas

AbstractSuperior electrical and optical quality of GaAs grown on Si with an inserted low-temperature (LT)-GaAs buffer-layer was demonstrated. Photoluminescence intensity was increasing and leakage current of Schottky diodes build on such a structure was decreasing by few orders of magnitude. These observations were correlated with structural studies employing classical and high-resolution transmission electron microscopy (TEM). Bending of the threading dislocations and their interaction was observed at the interface between a cap GaAs layer and the LT-GaAs layer. This dislocation interaction results in the reduction of dislocation density by at least one order of magnitude or more compared for the GaAs layers with the same thickness grown on Si. The surface morphology of the cap GaAs layer is improving as well.

Influence of ZnO seed crystals and annealing on the optical quality of low-temperature grown ZnO nanorods

2007 ◽  
Vol 102 (4) ◽  
pp. 044908 ◽  
Author(s):  
C. Bekeny ◽  
T. Voss ◽  
B. Hilker ◽  
J. Gutowski ◽  
R. Hauschild ◽  
...  
Keyword(s):  
Low Temperature ◽  
Zno Nanorods ◽  
Optical Quality ◽  
Seed Crystals

FABRICATION OF GaN HOMO-JUNCTION ON Si (111) SUBSTRATE FOR SENSOR APPLICATIONS

2013 ◽  
Vol 01 (01) ◽  
pp. 1250006 ◽  
Author(s):  
M. Z. MOHD YUSOFF ◽  
Z. HASSAN ◽  
C. W. CHIN ◽  
H. ABU HASSAN ◽  
M. J. ABDULLAH ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
High Energy ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Raman Analysis ◽  
Sensor Applications ◽  
Current Voltage ◽  
Good Optical Quality

In this paper, we investigated growth of GaN pn-homo junction layers on silicon (111) by plasma-assisted molecular beam epitaxy (PA-MBE) system and its application for photo-sensors. Silicon (Si) and magnesium (Mg) were used in this study as n- and p-dopants, respectively. Structural and optical analysis of the GaN homo-junction samples were performed by using reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), Raman spectroscopy and photoluminescence (PL) to analyze the crystalline quality of the samples. Surprisingly, the Raman analysis has revealed that there is no quenching of the A1 (LO) peak, with the presence of Si - and Mg -dopants in sample. The pn-junctions sample has good optical quality as measured by the PL system. Electrical characterization of the photo-sensors was carried out by using current–voltage (I–V) measurements.

Exciton Localization and Stimulated Emission of ZnO Nanorods

2013 ◽  
Vol 538 ◽  
pp. 161-164 ◽  
Author(s):  
Chun Ping Li ◽  
Li Zhang ◽  
Chang Jie Liu ◽  
Ge Gao
Keyword(s):  
Zno Nanorods ◽  
Optical Quality ◽  
Stimulated Emission ◽  
High Yield ◽  
X Ray Diffraction ◽  
Localization Property ◽  
Exciton Localization ◽  
Transmission Electron ◽  
Intensity Changes

High yield ZnO nanorods are synthesized by a simple wet chemical method. The crystal morphology and structure of the ZnO nanorods are examined by transmission electron microscopy (TEM) and X-Ray Diffraction (XRD), respectively. The properties of the excitonic luminescence are investigated by temperature dependent photoluminescence (PL) spectra. Barely observed visible emission band indicates the good optical quality of the ZnO nanorods and the abnormal position and intensity changes of the emission peaks indicates the localization property of exciton.

scholarly journals Effect of Growth Temperature on Structural Quality of In-Rich InxAl1−xN Alloys on Si (111) Substrate by RF-MOMBE

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Wei-Chun Chen ◽  
Yue-Han Wu ◽  
Jr.-Sheng Tian ◽  
Tzu-Chun Yen ◽  
Pei-Yin Lin ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Ternary Alloys ◽  
Structural Quality ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Relationship Of ◽  
Substrate Temperatures

In-rich InAlN films were grown directly on Si (111) substrate by RF-MOMBE without any buffer layer. InAlN films were grown at various substrate temperatures in the range of 460–540°C with TMIn/TMAl ~3.3. Structural properties of InAlN ternary alloys were investigated with X-ray diffraction, scanning electron microscopy, and transmission electron microscopy (TEM). It is shown that the deposited In0.8AlM0.2N (0001) films can be in epitaxy with Si (111) substrate with orientation relationship of [2̅110]InAlN//[11̅0]Si. Also, the growth rate around ~0.25 μm/h almost remains constant for growth in the temperature range from 460 to 520°C. Cross-sectional TEM from InAlN grown on Si (111) at 460°C shows that the epitaxial film is in direct contact with Si without any interlayer.

scholarly journals Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy

Materials ◽  
2021 ◽  
Vol 14 (21) ◽  
pp. 6270
Author(s):  
Tristan Smołka ◽  
Katarzyna Posmyk ◽  
Maja Wasiluk ◽  
Paweł Wyborski ◽  
Michał Gawełczyk ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Internal Quantum Efficiency ◽  
Radiative Lifetime ◽  
Optical Quality ◽  
Structural Quality ◽  
Emission Quenching ◽  
Inp Quantum Dots

We present an experimental study on the optical quality of InAs/InP quantum dots (QDs). Investigated structures have application relevance due to emission in the 3rd telecommunication window. The nanostructures are grown by ripening-assisted molecular beam epitaxy. This leads to their unique properties, i.e., low spatial density and in-plane shape symmetry. These are advantageous for non-classical light generation for quantum technologies applications. As a measure of the internal quantum efficiency, the discrepancy between calculated and experimentally determined photon extraction efficiency is used. The investigated nanostructures exhibit close to ideal emission efficiency proving their high structural quality. The thermal stability of emission is investigated by means of microphotoluminescence. This allows to determine the maximal operation temperature of the device and reveal the main emission quenching channels. Emission quenching is predominantly caused by the transition of holes and electrons to higher QD’s levels. Additionally, these carriers could further leave the confinement potential via the dense ladder of QD states. Single QD emission is observed up to temperatures of about 100 K, comparable to the best results obtained for epitaxial QDs in this spectral range. The fundamental limit for the emission rate is the excitation radiative lifetime, which spreads from below 0.5 to almost 1.9 ns (GHz operation) without any clear spectral dispersion. Furthermore, carrier dynamics is also determined using time-correlated single-photon counting.

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