Grain size-induced enhancement of thermoelectric performance of Cu3Sb1−xInxSe4 materials

2021 ◽  
pp. 2151026
Author(s):  
Lin Bo ◽  
Wen-Ying Wang ◽  
Yong-Peng Wang ◽  
Lei Wang ◽  
Fu-Jin Li ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Grain Size ◽  
Ball Milling ◽  
Temperature Region ◽  
Hot Pressing ◽  
Room Temperature ◽  
Powder Processing ◽  
Thermoelectric Performance ◽  
In Doping

The ternary Cu3SbSe4 thermoelectric material with diamond-like structure exhibits good thermoelectric performance in the middle temperature region. In this study, the Cu3Sb[Formula: see text]In[Formula: see text]Se4 ([Formula: see text]= 0–0.03) materials were fabricated by melting-annealing-ball milling-hot pressing process. The influences of In-doping and grain size on the microstructure and thermoelectric properties of Cu3Sb[Formula: see text]In[Formula: see text]Se4 were evaluated. It is found that the electricity conduction at room temperature for Cu3Sb[Formula: see text]In[Formula: see text]Se4 sample was significantly increased to 6.1 × 103Sm[Formula: see text] due to the In-doping. Additionally, during the powder processing, a relatively low thermal conductivity for the refinement Cu3Sb[Formula: see text]In[Formula: see text]Se4-BM-72H sample was obtained. Benefiting from the enhanced electrical conductivity and the decreased thermal conductivity, the maximum zT value of 0.75 was achieved for Cu3Sb[Formula: see text]In[Formula: see text]Se4-BM-36H at 650 K.

Thermal Diffusivity and Conductivity of La0.7Ca0.3-xSrxMnO3 (x=0 to 0.10)

2012 ◽  
Vol 501 ◽  
pp. 319-323
Author(s):  
Hasan A. Alwi ◽  
Lay S. Ewe ◽  
Zahari Ibrahim ◽  
Noor B. Ibrahim ◽  
Roslan Abd-Shukor
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Grain Size ◽  
Transition Temperature ◽  
Thermal Diffusivity ◽  
Electrical Properties ◽  
Room Temperature ◽  
Electronic Contribution ◽  
Insulator Metal Transition ◽  
Thermal And Electrical Properties

We report the room temperature thermal conductivity κ and thermal diffusivity α of polycrystalline La0.7Ca0.3-xSrxMnO3 for x = 0 to 0.1. The samples were prepared by heating at 1220 and 1320oC. The insulator-metal transition temperature, TIM and thermal diffusivity increased with Sr content. Phonon was the dominant contributor to thermal conductivity and the electronic contribution was less than 1%. Enhancement of electrical conductivity σ and thermal diffusivity for x ≥ 0.08 was observed in both series of samples. The grain size of the samples (28 to 46 µm) does not show any affect on the thermal and electrical properties.

Raising the Thermoelectric Performance of Fe3CoSb12 Skutterudites via Nd Filling and In-Situ Nanostructuring

2016 ◽  
Vol 16 (4) ◽  
pp. 3841-3847 ◽  
Author(s):  
Lijie Guo ◽  
Zhengwei Cai ◽  
Xiaolong Xu ◽  
Kunling Peng ◽  
Guiwen Wang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermoelectric Performance ◽  
Large Reduction ◽  
Dimensionless Figure Of Merit ◽  
Plasma Sintering ◽  
Spark Plasma

p-type skutterudites NdxFe3CoSb12 with x equaling 0.8, 0.85, 0.9, 0.95, 1.0 have been synthesized by solid state reaction followed by spark plasma sintering. The influence of Nd filling on electrical and thermal transport properties has been investigated in the Nd-filled skutterudite compounds in the temperature range from room temperature to 800 K. It was found that the Seebeck coefficient is drastically enhanced via filling Nd in p-Type skutterudites as well as the corresponding power factor although electrical conductivity is reduced. In addition, a large reduction in thermal conductivity is achieved by Nd fillers through rattling effect along with the In-Situ nanostructured precipitate through scattering phonons with much wider frequency. These concomitant effects result in an enhanced thermoelectric performance with the dimensionless figure of merit ZT. These observations demonstrate an exciting scientific opportunity to raise the figure-of-merit of p-type skutterudites.

High thermal conductivity of pure dense SiC ceramics prepared via HTPVT

2019 ◽  
Vol 12 (03) ◽  
pp. 1950032 ◽  
Author(s):  
Yuchen Deng ◽  
Yaming Zhang ◽  
Nanlong Zhang ◽  
Qiang Zhi ◽  
Bo Wang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Silicon Carbide ◽  
Grain Size ◽  
Phase Composition ◽  
Room Temperature ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Growth Substrate ◽  
Sic Ceramics ◽  
Evolution Of Microstructure

Pure dense silicon carbide (SiC) ceramics were obtained via the high-temperature physical vapor transport (HTPVT) method using graphite paper as the growth substrate. The phase composition, the evolution of microstructure, the thermal diffusivity and thermal conductivity at RT to 200∘C were investigated. The obtained samples had a relative density of higher than 98.7% and a large grain size of 1[Formula: see text]mm, the samples also had a room-temperature thermal conductivity of [Formula: see text] and with the temperature increased to 200∘C, the thermal conductivity still maintained at [Formula: see text].

The Influence of Silicon Dopant and Processing on Thermoelectric Properties of B4C Ceramics

1998 ◽  
Vol 545 ◽  
Author(s):  
Ke-Feng Cai ◽  
Ce-Wen Nan ◽  
Xin-Min Min
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Hot Pressing ◽  
Figure Of Merit ◽  
Room Temperature ◽  
A Value ◽  
Si Doped

AbstractB4C ceramics doped with various content of Si (0 to 2.03 at%) are prepared via hot pressing. The composition and microstructure of the ceramics are characterized by means of XRD and EPMA. Their electrical conductivity and Seebeck coefficient of the samples are measured from room temperature up to 1500K. The electrical conductivity increases with temperature, and more rapidly after 1300K; the Seebeck coefficient of the ceramics also increases with temperature and rises to a value of about 320μVK−1. The value of the figure of merit of Si-doped B4C rises to about 4 × 10−4K−1 at 1500K.

scholarly journals Significantly enhanced thermoelectric performance of Cu-doped p-type Bi0.5Sb1.5Te3 by a hydrothermal synthesis method

RSC Advances ◽  
2017 ◽  
Vol 7 (65) ◽  
pp. 41111-41116 ◽  
Author(s):  
Zichen Wei ◽  
Chenyang Wang ◽  
Li You ◽  
Shijie Zhao ◽  
Kang Yang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Hydrothermal Synthesis ◽  
Hydrothermal Method ◽  
Synthesis Method ◽  
Thermoelectric Performance ◽  
P Type

Increased electrical conductivity and decreased thermal conductivity were achieved simultaneously in the Cu-doped Bi0.5Sb1.5Te3 synthesized by a hydrothermal method.

scholarly journals Silver vacancy concentration engineering leading to the ultralow lattice thermal conductivity and improved thermoelectric performance of Ag1-xInTe2

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Yaqiong Zhong ◽  
Yong Luo ◽  
Xie Li ◽  
Jiaolin Cui
Keyword(s):  
Crystal Structure ◽  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Point Defects ◽  
Lattice Thermal Conductivity ◽  
Vacancy Concentration ◽  
Antisite Defect ◽  
Thermoelectric Performance ◽  
Callaway Model

AbstractAgInTe2 compound has not received enough recognition in thermoelectrics, possibly due to the fact that the presence of Te vacancy (VTe) and antisite defect of In at Ag site (InAg) degrades its electrical conductivity. In this work, we prepared the Ag1-xInTe2 compounds with substoichiometric amounts of Ag and observed an ultralow lattice thermal conductivity (κL = 0.1 Wm−1K−1) for the sample at x = 0.15 and 814 K. This leads to more than 2-fold enhancement in the ZT value (ZT = 0.62) compared to the pristine AgInTe2. In addition, we have traced the origin of the untralow κL using the Callaway model. The results attained in this work suggest that the engineering of the silver vacancy (VAg) concentration is still an effective way to manipulate the thermoelectric performance of AgInTe2, realized by the increased point defects and modified crystal structure distortion as the VAg concentration increases.

scholarly journals Effect of Grain Size and Film Thickness on the Thermoelectric Properties of Flexible Sb2Te3 Thin Films

2019 ◽  
Vol 2019 ◽  
pp. 1-7 ◽  
Author(s):  
Pornsiri Wanarattikan ◽  
Piya Jitthammapirom ◽  
Rachsak Sakdanuphab ◽  
Aparporn Sakulkalavek
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Grain Size ◽  
Film Thickness ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Flexible Substrate ◽  
Rf Magnetron Sputtering ◽  
Mean Free Path

In this work, stoichiometric Sb2Te3 thin films with various thicknesses were deposited on a flexible substrate using RF magnetron sputtering. The grain size and thickness effects on the thermoelectric properties, such as the Seebeck coefficient (S), electrical conductivity (σ), power factor (PF), and thermal conductivity (k), were investigated. The results show that the grain size was directly related to film thickness. As the film thickness increased, the grain size also increased. The Seebeck coefficient and electrical conductivity corresponded to the grain size of the films. The mean free path of carriers increases as the grain size increases, resulting in a decrease in the Seebeck coefficient and increase in electrical conductivity. Electrical conductivity strongly affects the temperature dependence of PF which results in the highest value of 7.5 × 10−4 W/m·K2 at 250°C for film thickness thicker than 1 µm. In the thermal conductivity mechanism, film thickness affects the dominance of phonons or carriers. For film thicknesses less than 1 µm, the behaviour of the phonons is dominant, while both are dominant for film thicknesses greater than 1 µm. Control of the grain size and film thickness is thus critical for controlling the performance of Sb2Te3 thin films.

Thermoelectric Performance of Glass Microsphere Dispersed Bi-Sb Composites at Low Temperature

2013 ◽  
Vol 743-744 ◽  
pp. 120-125
Author(s):  
Zhen Chen ◽  
Ye Mao Han ◽  
Min Zhou ◽  
Rong Jin Huang ◽  
Yuan Zhou ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Materials ◽  
Sem Analysis ◽  
Glass Microsphere ◽  
Thermoelectric Performance ◽  
X Ray Diffraction ◽  
X Ray ◽  
Measurement Results

In the present study, the glass microsphere dispersed Bi-Sb thermoelectric materials have been fabricated through mechanical alloying followed by pressureless sintering. The phase composition and the microstructure were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) analysis. Electrical conductivity, Seebeck coefficient and thermal conductivity were measured in the temperature range of 77~300 K. The ZT values were calculated according to the measurement results. The results showed that the electrical conductivity, Seebeck coefficient and thermal conductivity decreased by adding glass microsphere into Bi-Sb thermoelectric materials. However, the optimum ZT value of 0.24 was obtained at 260 K, which was increased 10% than that of the Bi-Sb matrix. So it is confirmed that the thermoelectric performance of Bi-Sb-based materials can be improved by adding moderate glass microspheres.

scholarly journals Synthesis of AG Nanocrystal/Few-Layer Graphite Nanoplatelet Composites

2018 ◽  
Vol 27 (2) ◽  
pp. 096369351802700
Author(s):  
Shasha li ◽  
Nailiang Liu ◽  
Changqing Fang
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Grain Size ◽  
Electroless Plating ◽  
Organic Materials ◽  
Treatment Results ◽  
Plating Method ◽  
Distinct Boundary ◽  
Electroless Plating Method

The present study focuses on improving the combination of graphite nanoplatelet (GNP) with other organic materials without reducing its properties. An Ag nanocrystal was synthesized by electroless plating method under sonication at 40 °C, which was coated densely onto few-layer GNP and hexagon-slice GNP that was found during GNP treatment. Results illustrated that the Ag nanocrystal had uniform grain size and distinct boundary covered onto GNP. The thermal conductivity of the Ag nanocrystal /few-layer GNP (Ag/GNP) composite was superior to that of the GNP material. In addition, the Ag/GNP composite exhibited excellent electrical conductivity.

Thermoelectric Properties of Binary-Phased Nanocomposites

2014 ◽  
Vol 809-810 ◽  
pp. 3-8
Author(s):  
Peng Xian Lu
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Hot Press ◽  
Point Temperature ◽  
Disordered Structure ◽  
Maximum Value ◽  
Hot Press Process

In order to increase the electrical conductivity greatly but maintain a large Seebeck coefficient and a low thermal conductivity simultaneously, the binary-phased LaCeFe3CoSb12-Sb nanocomposites composed of LaCeFe3CoSb12skutterudite nanospheres and semimetal Sb microsized ribbons were fabricated via a hydro/solvo thermal route. The results suggest that the Sb powders result in a disordered structure during a hot-press process at its melting-point temperature and the disordered structure has been partly preserved into the room-temperature materials successfully. The Sb microsized ribbons enhance the electrical conductivity of the binary-phased materials largely, meanwhile the disordered structure increases the Seebeck coefficient obviously even though the thermal conductivity is also increased slightly. Consequently, the figure of merit of the binary-phased materials is improved significantly and the maximum value of 1.54 at 773 K has been realized for the LaCeFe3CoSb15material.

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