High-Speed Uni-Traveling-Carrier Photodiodes Monolithically Integrated with InP Heterojunction Bipolar Transistors using Be Ion Implantation

2006 ◽  
Vol 45 (10A) ◽  
pp. 7605-7610 ◽  
Author(s):  
Norihide Kashio ◽  
Shoji Yamahata ◽  
Minoru Ida ◽  
Kenji Kurishima ◽  
Kimikazu Sano
Keyword(s):  
Ion Implantation ◽  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Bipolar Transistors ◽  
Monolithically Integrated

TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

1995 ◽  
Vol 53 ◽  
pp. 468-469
Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Bipolar Transistors ◽  
Sige Hbt ◽  
Integrated Circuit Manufacturing ◽  
Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

IVA-2 high-speed performance of AlGaAs/GaAs heterojunction bipolar transistors with nonalloyed emitter contacts

1987 ◽  
Vol 34 (11) ◽  
pp. 2369-2369 ◽  
Author(s):  
K. Nagata ◽  
O. Nakajima ◽  
Y. Yamauchi ◽  
H. Ito ◽  
T. Nittono ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Bipolar Transistors ◽  
Speed Performance

High-speed InGaP/InGaAsN/GaAs NpN double heterojunction bipolar transistors with low turn-on voltage

2002 ◽  
Vol 46 (4) ◽  
pp. 581-584 ◽  
Author(s):  
P.C Chang ◽  
C Monier ◽  
A.G Baca ◽  
N.Y Li ◽  
F Newman ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Bipolar Transistors ◽  
Turn On ◽  
Double Heterojunction

Design and Analysis of Micromachined Thermosyphon for Cooling of High-Power InP HBT Circuits

2003 ◽  
Author(s):  
H. Khalkhali ◽  
S. Mohammadi ◽  
L. P. B. Katehi ◽  
K. Kurabayashi
Keyword(s):  
High Power ◽  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Rf Circuits ◽  
Bipolar Transistors ◽  
Working Fluid ◽  
Thermal Reliability ◽  
Drive Power ◽  
On Chip ◽  
Micrometer Scale

Integrated InP heterojunction bipolar transistors (HBTs) are used as a high-speed switch in high-power radio frequency (RF) circuits for microwave wireless communications. The power dissipation of each of these devices often reaches as high as 1 W, raising concerns for their thermal reliability. The relatively poor thermal conductivity of InP prohibits effective spreading of heat within the device substrate. To address this problem, this work proposes a novel microfluidic device called the “micro thermosyphon” for cooling the InP-based microwave circuits. This paper describes the concept of the micro thermosyphon and presents its design and analysis, accounting for the large surface tension effect of the working fluid at the micrometer scale. Our simulation suggests that the proposed device could remove a heat flux density as large as 25 W/cm2 from a high-power InP HBT circuit while maintaining the circuit temperature lower than 100 °C. The micro thermosyphon is a fully passive cooling device suited for achieving effective on-chip cooling without requiring any drive power. Experimental work is currently being under way to validate the device performance.

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