A Review on the Low-Dimensional and Hybridized Nanostructured Diamond Films

In the last decade, besides the breakthrough of high-rate growth of chemical vapor deposited single-crystal diamonds, numerous nanostructured diamond films have been rapidly developed in the research fields of the diamond-based sciences and industrial applications. The low-dimensional diamonds of two-dimensional atomic-thick nanofilms and nanostructural diamond on the surface of bulk diamond films have been theoretically and experimentally investigated. In addition, the diamond-related hybrid nanostructures of n-type oxide/p-type diamond and n-type nitride/p-type diamond, having high performance physical and chemical properties, are proposed for further applications. In this review, we first briefly introduce the three categories of diamond nanostructures and then outline the current advances in these topics, including their design, fabrication, characterization, and properties. Finally, we address the remaining challenges in the research field and the future activities.

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Review of Fabrication Methods of Nanotube / Nanowire Devices

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.411.427 ◽

2011 ◽

Vol 411 ◽

pp. 427-431 ◽

Cited By ~ 1

Author(s):

Miao Miao Tan ◽

Zi Yi Zhang ◽

Lin Hui Zhao ◽

Jian Cheng Zhang

Keyword(s):

Carbon Nanotube ◽

High Performance ◽

Chemical Properties ◽

Research Field ◽

Nano Materials ◽

One Dimensional ◽

Nano Fabrication ◽

Nano Structures ◽

Manufacturing Methods ◽

And Chemical Properties

With the development of nano materials, a novel research field of NEMS forms by combining nano materials, nano-structures and nano fabrication with MEMS. Carbon nanotube (CNT) is a kind of one-dimensional nano structures which has unique mechanical, electrical and chemical properties. Using CNTs, new nano-devices with new principle or high performance would be developed. This paper reviews the assembly methods of one dimensional nanostructure and analyzes the characteristics of various methods, which provides reference for the device manufacturing methods using nanotubes/nanowires.

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High Rate, High Quality, Diamond Synthesis by the Combustion Flame Process

MRS Proceedings ◽

10.1557/proc-349-373 ◽

1994 ◽

Vol 349 ◽

Author(s):

K.V. Ravi ◽

D.S. Olson ◽

C.A. Koch

Keyword(s):

Diamond Films ◽

Chemical Vapor ◽

Low Pressure ◽

High Rate ◽

Synthesis Process ◽

Oh Radicals ◽

Diamond Synthesis ◽

Large Area ◽

Combustion Flame ◽

Bulk Diamond

ABSTRACTAmong the various low pressure techniques being developed for the synthesis of diamond films and bulk diamond slabs the combustion flame synthesis process has some distinct advantages. In this approach the combustion reaction between acetylene and oxygen is utilized to generate the requisite energy to activate excess acetylene in the gas mix leading to the deposition of diamond films on a temperature controlled substrate brought into contact with the flame. Other diamond synthesis approaches, such as microwave enhanced and the filament assisted chemical vapor deposition processes, and the various arc jet techniques utilize mixtures of hydrogen and methane as the process gases. Oxygen and oxidizing specie ( such as OH radicals) in the flame ambient may be much more effective than atomic hydrogen in promoting the growth of diamond over the growth of graphite and other non- diamond forms of carbon. In addition this technique enables the growth of diamond at high rates and is relatively easily scaled for large area synthesis. In this paper a discussion of this technique is presented drawing upon recent research by the authors as well as published work to present a general discussion of the issues involved in the development of this technique of low pressure diamond synthesis.

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III–V Nanowires: Synthesis, Property Manipulations, and Device Applications

Journal of Nanomaterials ◽

10.1155/2014/702859 ◽

2014 ◽

Vol 2014 ◽

pp. 1-14 ◽

Cited By ~ 22

Author(s):

Ming Fang ◽

Ning Han ◽

Fengyun Wang ◽

Zai-xing Yang ◽

SenPo Yip ◽

...

Keyword(s):

High Performance ◽

Low Cost ◽

Volume Ratio ◽

Chemical Vapor ◽

Cost Effective ◽

Research Field ◽

Synthesis Methods ◽

Comprehensive Overview ◽

Device Applications ◽

Property Control

III–V semiconductor nanowire (NW) materials possess a combination of fascinating properties, including their tunable direct bandgap, high carrier mobility, excellent mechanical flexibility, and extraordinarily large surface-to-volume ratio, making them superior candidates for next generation electronics, photonics, and sensors, even possibly on flexible substrates. Understanding the synthesis, property manipulation, and device integration of these III–V NW materials is therefore crucial for their practical implementations. In this review, we present a comprehensive overview of the recent development in III–V NWs with the focus on their cost-effective synthesis, corresponding property control, and the relevant low-operating-power device applications. We will first introduce the synthesis methods and growth mechanisms of III–V NWs, emphasizing the low-cost solid-source chemical vapor deposition (SSCVD) technique, and then discuss the physical properties of III–V NWs with special attention on their dependences on several typical factors including the choice of catalysts, NW diameters, surface roughness, and surface decorations. After that, we present several different examples in the area of high-performance photovoltaics and low-power electronic circuit prototypes to further demonstrate the potential applications of these NW materials. Towards the end, we also make some remarks on the progress made and challenges remaining in the III–V NW research field.

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Host–guest carbon dots as high-performance fluorescence probes

Journal of Materials Chemistry C ◽

10.1039/c7tc01574g ◽

2017 ◽

Vol 5 (25) ◽

pp. 6328-6335 ◽

Cited By ~ 17

Author(s):

Ping Wang ◽

Jia-Hui Liu ◽

Haidi Gao ◽

Yin Hu ◽

Xiaofang Hou ◽

...

Keyword(s):

Carbon Dots ◽

High Performance ◽

Research Field ◽

Hybrid Nanostructures ◽

Fluorescence Probes

Host–guest carbon dots (G@CDots) represent a new platform in the rapidly advancing and expanding research field of carbon dots, enabling the development of novel carbon hybrid nanostructures of unique properties beyond those of conventional carbon dots.

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Preparation of High-Performance Enteromorpha Prolifera–Based Porous Carbons by Nitrogen Modification and Their Electrochemical Performance

Frontiers in Energy Research ◽

10.3389/fenrg.2021.668111 ◽

2021 ◽

Vol 9 ◽

Author(s):

Ming Li ◽

Kuihua Han ◽

Zhaocai Teng ◽

Meimei Wang ◽

Yang Cao ◽

...

Keyword(s):

Electrochemical Performance ◽

High Performance ◽

Chemical Properties ◽

High Rate ◽

Cycle Performance ◽

Enteromorpha Prolifera ◽

Porous Carbons ◽

Surface Areas ◽

Notable Increase ◽

Novel Method

This study presents a novel method to improve the electrochemical performance of porous carbons (PCs) by simply adjusting the elemental composition of their precursors with nitrogen-rich materials as additives. Nitrogen-modified enteromorpha prolifera–based (EP-based) PCs are prepared from EP and urea (or melamine). Overall, compared with the control PC without nitrogen modification, their pore structures and surface chemical properties present similar improvement. When used in supercapacitors, their specific capacitances increase by approximately 22% due to their significant development of mesopores at 2.5–7.0 nm, which increases the effective surface areas. With an appropriate amount of nitrogen-containing or oxygen-containing functional groups maintaining surface wettability, the notable increase of graphitized N improves their conductivity. Due to the higher graphitization degrees, their resistances are reduced. With more mesopores transporting ions, they exhibit excellent high-rate capacitive performance. Moreover, they show remarkable long cycle performance with the specific capacitance retention of larger than 92% after 10,000 cycles.

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High-rate chemical vapor deposition of diamond films by dc arc discharge in hydrogen-methane mixture gas

10.1117/12.22474 ◽

1990 ◽

Author(s):

Xiang-Liu Jiang ◽

Fang-Qing Zhang ◽

Jiang-Qi Li ◽

Bin Yang ◽

Guang-Hua Chen

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Arc Discharge ◽

Diamond Films ◽

Chemical Vapor ◽

High Rate ◽

Methane Mixture ◽

Dc Arc

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Comparative Study of Ohmic Contact Metallizations to Nanocrystalline Diamond Films

Materials Science Forum ◽

10.4028/www.scientific.net/msf.645-648.733 ◽

2010 ◽

Vol 645-648 ◽

pp. 733-735 ◽

Cited By ~ 2

Author(s):

Marko J. Tadjer ◽

Travis J. Anderson ◽

Karl D. Hobart ◽

Tatyana I. Feygelson ◽

James E. Butler ◽

...

Keyword(s):

Thermal Stability ◽

Vapor Deposition ◽

Ohmic Contacts ◽

Diamond Films ◽

Chemical Vapor ◽

Nanocrystalline Diamond ◽

Atmospheric Conditions ◽

Boron Doped ◽

P Type ◽

Film Annealing

Nanocrystalline diamond (NCD) films were deposited using plasma-enhanced chemical vapor deposition. The NCD films were Boron-doped for p-type conductivity, yielding sheet resistances from 6.17x1011 to 522.5 /. Four different metals were deposited as Ohmic contacts and investigated for contact resistance and thermal stability. Contact and film annealing was performed under different atmospheric conditions with variable N2 content.

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Electrical Properties of Hydrogen Terminated P-Type Diamond Film

Materials Science Forum ◽

10.4028/www.scientific.net/msf.663-665.625 ◽

2010 ◽

Vol 663-665 ◽

pp. 625-628

Author(s):

Fu Yuan Xia ◽

Lin Jun Wang ◽

Jian Huang ◽

Ke Tang ◽

Ji Jun Zhang ◽

...

Keyword(s):

Carrier Concentration ◽

Microwave Plasma ◽

Hydrogen Plasma ◽

Diamond Films ◽

Chemical Vapor ◽

Polycrystalline Diamond ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

P Type ◽

Effect Method

Undoped high quality polycrystalline diamond films were grown by the microwave plasma chemical vapor deposition (MPCVD) method. The effects of hydrogen plasma treatment and vacuum annealing process on the p-type behavior of diamond films were investigated by the Hall effect method. The sheet carrier concentration increased and the sheet resistivity decreased with the treating time of hydrogen plasma and a stable value was achieved finally. After annealing the samples in vacuum at temperature above 600 °C, the sheet carrier concentration dropped dramatically. The origin of this hydrogen terminated p-type conductive layers is also discussed.

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The Hydrogenation Impact on Electronic Properties of p-Diamond/n-Si Heterojunctions

Materials ◽

10.3390/ma14216615 ◽

2021 ◽

Vol 14 (21) ◽

pp. 6615

Author(s):

Szymon Łoś ◽

Kazimierz Fabisiak ◽

Kazimierz Paprocki ◽

Mirosław Szybowicz ◽

Anna Dychalska ◽

...

Keyword(s):

Diamond Films ◽

Chemical Vapor ◽

Polycrystalline Diamond ◽

Cvd Diamond ◽

Point Of View ◽

Hydrogen Passivation ◽

Temperature Dependent ◽

Current Voltage ◽

P Type ◽

Hot Filament

The undoped polycrystalline diamond films (PDFs) have been deposited on n-type silicon (Si) by Hot Filament Chemical Vapor Deposition (HF CVD) technique. The reaction gases are a mixture of methane and hydrogen. The obtained PDFs were characterized by scanning electron microscopy (SEM) and Raman spectroscopy which, in addition to the diamond phase, also confirms the presence of sp2 hybridized carbon bonds. As-grown CVD diamond layers are hydrogen terminated and show p-type conductivity. The effect of the level of hydrogenation on the electrical properties of p-diamond/n-Si heterojunctions has been investigated by temperature dependent current–voltage (J-V/T) characteristics. The obtained results suggest that the energy distribution of interface states at the grain boundary (GB) subjected to hydrogenation becomes shallower, and the hole capture cross-section can be reduced. Hydrogenation can lead to a significant reduction of the GB potential barrier. These results can be interesting from the point of view of hydrogen passivation of GBs in microelectronics.

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