Studies of the effect of temperature on charge accumulation in PVDF-PMMA double-layered thin films based on depolarization current measurements

2021 ◽  
pp. 009524432199640
Author(s):  
Pooja Saxena ◽  
Prashant Shukla
Keyword(s):  
Thin Films ◽  
Polyvinylidene Fluoride ◽  
Short Circuit ◽  
Charge Trapping ◽  
Opposite Polarity ◽  
Air Gap ◽  
Excess Charge ◽  
Polarization Current ◽  
Surface Charges ◽  
Depolarization Current

In this paper, we have reported the interpretation of air gap (Thermally Stimulated Depolarization Current) of surface charges in PVDF-PMMA (Polyvinylidene fluoride (PVDF)–Polymethyl methacrylate (PMMA)) double-layered polymer thin films whose decay could not be observed in metalized electrets with short-circuit TSDC. Since short-circuit TSDC is caused by the relaxations of homo- and hetero-charge flow in one direction and thus makes it difficult to identify, separate, and characterize its components, therefore, an air gap was introduced to the short-circuit TSDC technique to carry out air-gap TSDC. This technique enables one to observe the orientation of dipoles, excess charge decay by ohmic conduction, and decay of surface charge. When a dielectric is charged by an application of an external field, two charges with opposite polarity and different nature can be found. Air-gap TSDC’s of double-layer samples revealed the presence of homo charge; charges trapped at the surface are due to dissipation of space charges thus, the depolarization current is observed to have the same polarity as that of the polarization current. Hetero-charge persists at high temperatures due to the bulk polarization formed because of the electric field created by the homo-charge. Hence, the depolarization current observed in the present study was observed to be of opposite polarity as that of polarization current. The above discussed polymeric layered structure was found to be a source of charge trapping which was identified and confirmed by various calculated parameters.

scholarly journals Generating Electricity from Natural Evaporation Using PVDF Thin Films Incorporating Nanocomposite Materials

Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 585
Author(s):  
Ariel Ma ◽  
Jian Yu ◽  
William Uspal
Keyword(s):  
Thin Films ◽  
Graphene Oxide ◽  
Polyvinylidene Fluoride ◽  
Capillary Flow ◽  
Short Circuit ◽  
Current Source ◽  
Nanocomposite Materials ◽  
The Other ◽  
Pvdf Film ◽  
Ambient Conditions

Natural evaporation has recently come under consideration as a viable source of renewable energy. Demonstrations of the validity of the concept have been reported for devices incorporating carbon-based nanocomposite materials. In this study, we investigated the possibility of using polymer thin films to generate electricity from natural evaporation. We considered a polymeric system based on polyvinylidene fluoride (PVDF). Porous PVDF films were created by incorporating a variety of nanocomposite materials into the polymer structure through a simple mixing procedure. Three nanocomposite materials were considered: carbon nanotubes, graphene oxide, and silica. The evaporation-induced electricity generation was confirmed experimentally under various ambient conditions. Among the nanocomposite materials considered, mesoporous silica (SBA-15) was found to outperform the other two materials in terms of open-circuit voltage, and graphene oxide generated the highest short-circuit current. It was found that the nanocomposite material content in the PVDF film plays an important role: on the one hand, if particles are too few in number, the number of channels will be insufficient to support a strong capillary flow; on the other hand, an excessive number of particles will suppress the flow due to excessive water absorption underneath the surface. We show that the device can be modeled as a simple circuit powered by a current source with excellent agreement between the theoretical predictions and experimental data.

scholarly journals Layer-by-Layer Nanoassembly of Copper Indium Gallium Selenium Nanoparticle Films for Solar Cell Applications

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
A. Hemati ◽  
S. Shrestha ◽  
M. Agarwal ◽  
K. Varahramyan
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Zeta Potential ◽  
Copper Chloride ◽  
Short Circuit ◽  
Film Deposition ◽  
Layer By Layer ◽  
Surface Charges ◽  
Photoelectric Properties ◽  
Cigs Nanoparticles

Thin films of CIGS nanoparticles interdigited with polymers have been fabricated through a cost-effective nonvacuum film deposition process called layer-by-layer (LbL) nanoassembly. CIGS nanoparticles synthesized by heating copper chloride, indium chloride, gallium chloride, and selenium in oleylamine were dispersed in water, and desired surface charges were obtained through pH regulation and by coating the particles with polystyrene sulfonate (PSS). Raising the pH of the nanoparticle dispersion reduced the zeta-potential from+61 mV at pH 7 to−51 mV at pH 10.5. Coating the CIGS nanoparticles with PSS (CIGS-PSS) produced a stable dispersion in water with−56.9 mV zeta-potential. Thin films of oppositely charged CIGS nanoparticles (CIGS/CIGS), CIGS nanoparticles and PSS (CIGS/PSS), and PSS-coated CIGS nanoparticles and polyethylenimine (CIGS-PSS/PEI) were constructed through the LbL nanoassembly. Film thickness and resistivity of each bilayer of the films were measured, and photoelectric properties of the films were studied for solar cell applications. Solar cell devices fabricated with a 219 nm CIGS film, when illuminated by 50 W light-source, produced 0.7 V open circuit voltage and 0.3 mA/cm2short circuit current density.

scholarly journals Partial Discharge Simulation of Air Gap Defects in Oil-Paper Insulation Paperboard of Converter Transformer under Different Ratios of AC–DC Combined Voltage

Energies ◽  
2021 ◽  
Vol 14 (21) ◽  
pp. 6995
Author(s):  
Bing Luo ◽  
Jian Wang ◽  
Dong Dai ◽  
Lei Jia ◽  
Licheng Li ◽  
...  
Keyword(s):  
Fluid Model ◽  
Partial Discharge ◽  
Opposite Polarity ◽  
Air Gap ◽  
Mechanism Analysis ◽  
Surface Charges ◽  
Practical Operation ◽  
Discharge Simulation ◽  
Dc Component ◽  
Paper Insulation

A converter transformer is important primary equipment in a DC transmission project. The voltage on the valve side winding is complex when the equipment is running, including DC, AC, and AC–DC combined voltage. The insulation structure of the valve side winding of a converter transformer is an oil-paper insulation structure, which may have a variety of defects in the manufacturing stage and daily use, resulting in partial discharge. Therefore, it is the key to studying the partial discharge characteristics and mechanism of oil-paper insulation under AC–DC combined voltage. In this paper, we build a two-dimensional air gap model of oil-paper-insulated pressboard considering the actual particles and actual reaction based on the fluid model. The characteristics and evolution mechanism of partial discharge (PD) in pressboard under different AC/DC combined voltages are studied by numerical simulation. The results show that when the DC component increases, the polarity effect of partial discharge is more obvious, while the potential and discharge intensity in the air gap decrease. Further analysis revealed that the DC component in the combined voltage accumulated a large number of surface charges on the surface of the air gap, and the space charge distribution was more uniform and dispersed, which generated an electric field with opposite polarity to the DC component in the air gap and, then, inhibited the development of local discharge in the paperboard. The results of the simulation are consistent with the previous experimental phenomena, and the mechanism analysis of the simulation results also verifies the previous analysis on the mechanism of experimental phenomena. This will lay a theoretical foundation for the further study of partial discharge phenomenon of oil-paper insulation structures in practical operation in the future.

Charge Trapping and Degradation Properties of PZT Thin Films for MEMS

1996 ◽  
Vol 444 ◽  
Author(s):  
Hyeon-Seag Kim ◽  
D. L. Polla ◽  
S. A. Campbell
Keyword(s):  
Thin Films ◽  
Loss Factor ◽  
High Field ◽  
Microelectromechanical Systems ◽  
Charge Trapping ◽  
Metal Organic ◽  
Electrical Reliability ◽  
Silicon Based ◽  
Degradation Properties ◽  
Organic Decomposition

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).

scholarly journals Charge Trapping in Mixed Organic Donor-Acceptor Semiconductor Thin Films

2014 ◽  
Vol 26 (45) ◽  
pp. 7555-7560 ◽  
Author(s):  
Shota Nunomura ◽  
Xiaozhou Che ◽  
Stephen R. Forrest
Keyword(s):  
Thin Films ◽  
Charge Trapping ◽  
Semiconductor Thin Films ◽  
Donor Acceptor

scholarly journals Superior photo-carrier diffusion dynamics in organic-inorganic hybrid perovskites revealed by spatiotemporal conductivity imaging

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Xuejian Ma ◽  
Fei Zhang ◽  
Zhaodong Chu ◽  
Ji Hao ◽  
Xihan Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Relaxation Times ◽  
Charge Trapping ◽  
Free Carrier ◽  
Carrier Dynamics ◽  
Electron Hole ◽  
Inorganic Hybrid ◽  
Diffusion Dynamics ◽  
The Difference

AbstractThe outstanding performance of organic-inorganic metal trihalide solar cells benefits from the exceptional photo-physical properties of both electrons and holes in the material. Here, we directly probe the free-carrier dynamics in Cs-doped FAPbI3 thin films by spatiotemporal photoconductivity imaging. Using charge transport layers to selectively quench one type of carriers, we show that the two relaxation times on the order of 1 μs and 10 μs correspond to the lifetimes of electrons and holes in FACsPbI3, respectively. Strikingly, the diffusion mapping indicates that the difference in electron/hole lifetimes is largely compensated by their disparate mobility. Consequently, the long diffusion lengths (3~5 μm) of both carriers are comparable to each other, a feature closely related to the unique charge trapping and de-trapping processes in hybrid trihalide perovskites. Our results unveil the origin of superior diffusion dynamics in this material, crucially important for solar-cell applications.

scholarly journals Research on the Time-Domain Dielectric Response of Multiple Impulse Voltage Aging Oil-Film Dielectrics

Energies ◽  
2021 ◽  
Vol 14 (7) ◽  
pp. 1948
Author(s):  
Chenmeng Zhang ◽  
Kailin Zhao ◽  
Shijun Xie ◽  
Can Hu ◽  
Yu Zhang ◽  
...  
Keyword(s):  
Time Domain ◽  
Dielectric Response ◽  
Early Stage ◽  
Debye Model ◽  
Polarization Current ◽  
Depolarization Current ◽  
Oil Film ◽  
Impulse Voltage ◽  
The Time Domain ◽  
Film Dielectric

Power capacitors suffer multiple impulse voltages during their lifetime. With the multiple impulse voltage aging, the internal insulation, oil-film dielectric may deteriorate and even fail in the early stage, which is called accumulative effect. Hence, the time-domain dielectric response of oil-film dielectric with multiple impulse voltage aging is studied in this paper. At first, the procedure of the preparation of the tested samples were introduced. Secondly, an aging platform, impulse voltage generator was built to test the accumulative effect of capacitor under multiple impulse voltage. Then, a device was used to test the time-domain dielectric response (polarization depolarization current, PDC) of oil-film dielectric in different aging states. And finally, according to the PDC data, extended Debye model and characteristic parameters were obtained by matrix pencil algorithm identification. The results indicated that with the increase of impulse voltage times, the time-domain dielectric response of oil-film dielectric changed accordingly. The polarization current curve moved up gradually, the insulation resistance decreased when subjected to the repeated impulses. In frequency domain, the frequency spectrum of tan δ changed along with the impulse accumulation aging, especially at low frequency. At last, combined with the aging mechanism of oil-film dielectric under multiple impulse voltage, the test results were discussed.

Photoelectric Cells of Merocyanine Langmuir-Blodgett Films Utilizing Surface Plasmon Excitations

2001 ◽  
Vol 708 ◽  
Author(s):  
Keizo Kato ◽  
Futoshi Takahashi ◽  
Kazunari Shinbo ◽  
Futao Kaneko ◽  
Takashi Wakamatsu
Keyword(s):  
Thin Films ◽  
Surface Plasmon ◽  
Short Circuit ◽  
Schottky Diodes ◽  
Attenuated Total Reflection ◽  
Dielectric Constants ◽  
Type I ◽  
Type Ii ◽  
Lb Films ◽  
Langmuir Blodgett

ABSTRACTShort-circuit photocurrents (ISC) due to surface plasmon (SP) excitations have been investigated for the photoelectric cells using Langmuir-Blodgett (LB) films of merocyanine (MC) dye. The MC dye exhibits p-type conduction, and the Schottky and Ohmic contacts are obtained at the interfaces between MC LB films and Al thin films and between MC LB films and Ag thin films, respectively. Since the Schottky diodes show the photoelectric effects, the Schottky photoelectric cells have been constructed. The cells with two kinds of structures, that is, prism/Al/MC/Ag (type I) and prism/MgF2/Al/MC/Ag (type II), have been prepared. In the attenuated total reflection (ATR) method, the types I and II have the Kretschmann and both the Kretschmann and Otto configurations, respectively. SP has been resonantly excited at the interface between Ag and air for the type I and at the interfaces between MgF2 and Al between Ag and air for the type II. The ATR and the ISC properties have been simultaneously measured as a function of the incident angles of the laser beams. The peaks of the ISC have corresponded to the resonant angles of the ATR curves. The electric fields and optical absorptions in the cells have been also calculated using the dielectric constants and the film thicknesses obtained from the ATR measurements. The calculated absorptions in the MC layers as a function of the incident angles have corresponded to the results of ISC. It has been estimated that the ISC for both types I and II could be enhanced by the excitations of SP in the ATR configurations.

scholarly journals Performance of Parallel Connected SiC MOSFETs under Short Circuits Conditions

Energies ◽  
2021 ◽  
Vol 14 (20) ◽  
pp. 6834
Author(s):  
Ruizhu Wu ◽  
Simon Mendy ◽  
Nereus Agbo ◽  
Jose Ortiz Gonzalez ◽  
Saeed Jahdi ◽  
...  
Keyword(s):  
Elevated Temperatures ◽  
Short Circuit ◽  
Critical Factor ◽  
Charge Trapping ◽  
Parallel Connection ◽  
Bias Temperature Instability ◽  
Test Methodology ◽  
Threshold Voltages ◽  
Short Circuits ◽  
The Impact

This paper investigates the impact of parameter variation between parallel connected SiC MOSFETs on short circuit (SC) performance. SC tests are performed on parallel connected devices with different switching rates, junction temperatures and threshold voltages (VTH). The results show that VTH variation is the most critical factor affecting reduced robustness of parallel devices under SC. The SC current conducted per device is shown to increase under parallel connection compared to single device measurements. VTH shift from bias–temperature–instability (BTI) is known to occur in SiC MOSFETs, hence this paper combines BTI and SC tests. The results show that a positive VGS stress on the gate before the SC measurement reduces the peak SC current by a magnitude that is proportional to VGS stress time. Repeating the measurements at elevated temperatures reduces the time dependency of the VTH shift, thereby indicating thermal acceleration of negative charge trapping. VTH recovery is also observed using SC measurements. Similar measurements are performed on Si IGBTs with no observable impact of VGS stress on SC measurements. In conclusion, a test methodology for investigating the impact of BTI on SC characteristics is presented along with key results showing the electrothermal dynamics of parallel devices under SC conditions.

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