Nanostructured Aluminum Films: Deep Ultraviolet Absorption from Glancing Angle Physical Vapor Deposition

2019 ◽  
Author(s):  
Stephen Stagon ◽  
Ryan Scherzer
Keyword(s):  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Nanoparticle Arrays ◽  
Aluminum Films ◽  
Optical Absorbance ◽  
Glancing Angle ◽  
Before And After ◽  
Facile Fabrication ◽  
Deep Ultraviolet

This entry reports on the facile fabrication and characterization of aluminum (Al) nanoparticle arrays that absorb strongly in deep ultraviolet. First, Al nanoparticle arrays are fabricated using glancing angle physical vapor deposition and have average diameters of ~30 nm. After subsequent annealing, the structures become oxidized on the exterior with an Al metal core. Ultraviolet visible spectroscopy is performed to characterize the optical absorbance of the structures before and after annealing. The as-fabricated structures show strong and broad absorption centered near ~230 nm, and annealing in air at 400°C results in tightening and blue shifting of the absorption peak. Additionally, annealing results in a decrease in overall absorption intensity. These new results may be potentially useful for tandem or plasmon-assisted photovoltaics.

TEM characterization of WSix films

1994 ◽  
Vol 52 ◽  
pp. 848-849
Author(s):  
V. C. Kannan ◽  
S. M. Merchant ◽  
R. B. Irwin ◽  
A. K. Nanda ◽  
M. Sundahl ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Vapor Deposition ◽  
High Purity ◽  
Physical Vapor Deposition ◽  
Thermal Treatments ◽  
Rapid Thermal Anneal ◽  
Tungsten Silicide ◽  
Tem Characterization ◽  
Metal Silicides

Metal silicides such as WSi2, MoSi2, TiSi2, TaSi2 and CoSi2 have received wide attention in recent years for semiconductor applications in integrated circuits. In this study, we describe the microstructures of WSix films deposited on SiO2 (oxide) and polysilicon (poly) surfaces on Si wafers afterdeposition and rapid thermal anneal (RTA) at several temperatures. The stoichiometry of WSix films was confirmed by Rutherford Backscattering Spectroscopy (RBS). A correlation between the observed microstructure and measured sheet resistance of the films was also obtained.WSix films were deposited by physical vapor deposition (PVD) using magnetron sputteringin a Varian 3180. A high purity tungsten silicide target with a Si:W ratio of 2.85 was used. Films deposited on oxide or poly substrates gave rise to a Si:W ratio of 2.65 as observed by RBS. To simulatethe thermal treatments of subsequent processing procedures, wafers with tungsten silicide films were subjected to RTA (AG Associates Heatpulse 4108) in a N2 ambient for 60 seconds at temperatures ranging from 700° to 1000°C.

Effect of Cu Content on the Tribological Performance of Cr-N Coatings at High Temperatures (840°C)

2009 ◽  
Author(s):  
Kyriaki Polychronopoulou ◽  
Claus Rebholz ◽  
Nicholaos G. Demas ◽  
Andreas A. Polycarpou ◽  
P. N. Gibson
Keyword(s):  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Physical Vapor Deposition ◽  
Tribological Performance ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cu Content ◽  
Glancing Angle ◽  
Scanning Electron ◽  
Ball On Disc

Cr-N and Cu-Cr-N coatings with Cu content between 3–65 at.%, Cu/Cr ratios in the 0.04–4.5 range and 21–27 at.% N, synthesized by twin e-beam Physical Vapor Deposition (EBPVD) at 450°C, were investigated. Using X-ray photoelectron spectroscopy (XPS), glancing angle X-ray diffraction (GAXRD) and scanning electron microscopy (SEM), in combination with nanoindentation mechanical property measurements and laboratory controlled ball-on-disc sliding experiments, it is shown that Cu-Cr-N coatings with low Cu content (3 at.%) possess sufficient wear resistance for high temperature demanding tribological applications.

Growth and characterization of Ge nanostructures on Si(111)

2001 ◽  
Vol 696 ◽  
Author(s):  
F. Rosei ◽  
N. Motta ◽  
A. Sgarlata ◽  
A. Balzarotti
Keyword(s):  
Scanning Probe Microscopy ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Misfit Strain ◽  
Contact Angles ◽  
Scanning Probe ◽  
Wetting Layer ◽  
Reconstructed Surfaces

AbstractScanning Probe Microscopy (SPM) in situ is used to study the evolution of Ge islands grown by Physical Vapor Deposition on Si(111) 7×7 reconstructed surfaces. Large 3D islands form on the Wetting Layer (WL), with average lateral dimension in the range 200 - 500 nm. The statistical distribution of the island shapes has been analyzed, showing that three types of shapes coexist under certain conditions: strained, partially relaxed and ripened (atoll-like) islands. We measured the contact angles of the island facets, and observed the depletion of the substrate around the ripened islands. These features are attributed to the misfit strain, which is partially relieved by interdiffusion of Si into the Ge layers.

COMPOSITION AND NANOHARDNESS OF SiC FILMS DEPOSITED BY ELECTRON BEAM PHYSICAL VAPOR DEPOSITION

2009 ◽  
Vol 23 (06n07) ◽  
pp. 1910-1915 ◽  
Author(s):  
MIN TENG ◽  
XIAODONG HE ◽  
YUE SUN
Keyword(s):  
Electron Beam ◽  
Chemical Bonding ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Physical Vapor Deposition ◽  
Current Intensity ◽  
X Ray ◽  
Deposited Films ◽  
Sic Films

SiC films with a quantity of carbon and silicon were obtained by electron beam physical vapor deposition (EB-PVD) from a sintered SiC target with different current intensity of EB. The X-ray photoelectron spectroscopy (XPS) was used for characterization of chemical bonding states of C and Si elements in SiC films in order to study the influence of current intensity of EB on the compositions in the deposited films. At the same time, the nanohardness of the deposited films was investigated.

Combinatorial Studies for High Density Si and Ge Nanoparticle Arrays

2006 ◽  
Vol 933 ◽  
Author(s):  
Scott K. Stanley ◽  
John G. Ekerdt
Keyword(s):  
Vapor Deposition ◽  
Entire Range ◽  
Physical Vapor Deposition ◽  
Large Temperature ◽  
Nanoparticle Arrays ◽  
Nanoparticle Growth ◽  
Wide Range ◽  
Time Required ◽  
Nanoparticle Sizes ◽  
Deposition Conditions

ABSTRACTA simple combinatorial approach for studying chemical and physical vapor deposition (CVD and PVD) nanoparticle growth is presented utilizing temperature and precursor flux gradients across sample surfaces. Large temperature gradients (450-700 °C) are induced covering the entire range of interest for most CVD and PVD processes. Precursor flux gradients may also be introduced simultaneously or separately using a tungsten cracking filament mounted on a translation arm. Theory and calibration experiments are explained and results from a study on Ge nanoparticle growth on HfO2 surfaces are presented and analyzed. This method drastically decreases experimental time required to investigate nanoparticle growth and identify optimum deposition conditions. Furthermore, this approach greatly facilitates preparation of library samples containing a wide range (several orders of magnitude) in variation of nanoparticle sizes, density, and composition for subsequent studies.

Deposition and Characterization of Carbon Nitride Films by Laser Processed Methods

1998 ◽  
Vol 526 ◽  
Author(s):  
Ashok Kumar ◽  
R. Alexandrescu ◽  
Michael A. George
Keyword(s):  
Thin Films ◽  
Comparative Analysis ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Carbon Nitride ◽  
Pyrolytic Graphite ◽  
Chemical Vapor ◽  
Nitrogen Atmosphere ◽  
Graphite Target

AbstractLaser assisted methods such as laser physical vapor deposition (LPVD) and laser induced chemical vapor deposition (LCVD) have been utilized to grow carbon nitride (CNx) films on various substrates. It has been shown that the both techniques produce good quality thin films of CNx. In LPVD, a laser beam (λ= 248 nm) has been used to ablate the pyrolytic graphite target in nitrogen atmosphere, where as CO2 laser was to irradiate carbon-nitrogen containing mixtures such as C2H2/N2O/NH3 in LCVD method. A comparative analysis will be presented in terms of structural properties of CNx films prepared by both techniques.

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