scholarly journals Characterization of Cr/Ag Bi-Layer thin Metal Contacts Sputter Deposited on N-Type Si Semiconductor

2018 ◽  
Vol 7 (4.30) ◽  
pp. 326
Author(s):  
Ahmad Hadi Al ◽  
Nurul Syafiqah Pauzi
Keyword(s):  
Electrical Conductivity ◽  
Surface Roughness ◽  
Energy Conversion Efficiency ◽  
Thin Metal ◽  
Electrical Characteristics ◽  
Metal Contacts ◽  
Atomic Force ◽  
Metal Thickness ◽  
Sputter Deposited ◽  
20 Nm

Good electrical conductivity of metal contacts on semiconductor are very crucial in determining quality of the energy conversion efficiency. This paper reports on the Cr/Ag thin metal contacts properties sputter deposited on n-type Si. The metal contacts were characterized based on the morphological and electrical properties. The surface morphology of metal contacts was characterized by using atomic force microscope (AFM) and resulted in increment of the surface roughness from 1.35 nm to 9.21 nm at the thickness of 20 nm to 100 nm. The electrical characteristics were characterized by using four-point probe system. From the measurement, the lowest electrical resistivity was measured as 1.19 × 10-6 W-cm at Ag thickness of 100 nm. Whereas the electrical conductivity of the thin metal contact was obtained as 8.40 × 105 W-cm-1 at Ag thickness of 100 nm. From the analysis, it is clearly shown that as the Ag thin metal thickness gets thicker, the surface roughness gets rougher thus resulting in the improvement of the electrical characteristics of the Si/Cr/Ag contacts.

scholarly journals The Potential of High-Fluence Ion Irradiation for Processing and Recovery of Diamond Tools

Coatings ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1243
Author(s):  
Anatoly M. Borisov ◽  
Valery A. Kazakov ◽  
Eugenia S. Mashkova ◽  
Mikhail A. Ovchinnikov ◽  
Sergey N. Grigoriev ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Ion Irradiation ◽  
Diamond Structure ◽  
High Fluence ◽  
Carbon Ions ◽  
Atomic Force ◽  
Synthetic Diamonds ◽  
Argon Ions ◽  
20 Nm ◽  
Scanning Electron

The graphitization and surface growth of synthetic diamonds by high-fluence irradiation with 30 keV argon and carbon ions have been experimentally studied. scanning electron microscope (SEM) and atomic force microscope (AFM) show removal of traces of mechanical polishing. The ion-induced roughness does not exceed 20 nm. Raman spectroscopy and the measurement of electrical conductivity confirm the graphitization of the surface layer when irradiated with argon ions at the temperature of 230 °C and the diamond structure of the synthesized layer when irradiated with carbon ions at the temperature of 650 °C.

Structural, morphology and electrical properties of layered copper selenide thin film

Open Physics ◽  
2009 ◽  
Vol 7 (2) ◽  
Author(s):  
J. Ying Chyi Liew ◽  
Zainal Talib ◽  
W. Mahmood ◽  
M. Yunus ◽  
Zulkarnain Zainal ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Surface Roughness ◽  
Grain Size ◽  
Copper Selenide ◽  
Layer By Layer ◽  
Structural Morphology ◽  
Force Microscopy ◽  
Atomic Force ◽  
Average Grain Size ◽  
Evaporation Technique

AbstractThin films of copper selenide (CuSe) were physically deposited layer-by-layer up to 5 layers using thermal evaporation technique onto a glass substrate. Various film properties, including the thickness, structure, morphology, surface roughness, average grain size and electrical conductivity are studied and discussed. These properties are characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), ellipsometer and 4 point probe at room temperature. The dependence of electrical conductivity, surface roughness, and average grain size on number of layers deposited is discussed.

AFM STUDIES OF VARIOUS NIOBIUM AND ALUMINIUM THIN FILMS FOR THEIR USE IN JOSEPHSON JUNCTIONS

2001 ◽  
Vol 08 (06) ◽  
pp. 689-692
Author(s):  
SHAHZAD NASEEM
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Magnetron Sputtering ◽  
Atomic Force Microscope ◽  
Josephson Junctions ◽  
Smooth Surface ◽  
Film Surface ◽  
Rf Magnetron Sputtering ◽  
Atomic Force ◽  
Sputter Deposited

Nb thin films have been prepared with e-beam evaporation under UHV conditions, and by RF magnetron sputtering. Al thin films were deposited by resistive heating in the UHV chamber. The preparation of these films and the trilayers of Nb/AlO x /Nb are intended for their use in Josephson junctions. Surface studies of these films are undertaken by using an atomic force microscope in the noncontact mode. These studies have revealed that the sputter-deposited Nb film surface is smoother than that of the UHV e-beam evaporated with R rms values of 3.5 and 4.0 nm respectively. Al thin films have a very smooth surface, with an R rms value of only 0.9 nm. Consequently, UHV-evaporated Nb thin films deposited on top of Al thin films are smoother, with a surface roughness of 1.8 nm.

THICKNESS DEPENDENCE OF MORPHOLOGY IN La2/3Ca1/3MnO3 THIN FILMS

2005 ◽  
Vol 19 (15n17) ◽  
pp. 2409-2414 ◽  
Author(s):  
Y. M. ZHANG ◽  
X. S. WU ◽  
S. S. JIANG ◽  
W. S. TAN ◽  
J. GAO
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Surface Morphology ◽  
Lattice Strain ◽  
Lattice Mismatch ◽  
Atomic Force ◽  
Average Grain Size ◽  
Full Relaxation ◽  
20 Nm ◽  
Rough Surface Morphology

La2/3Ca1/3MnO3 (LCMO) thin films with the thickness from 4 nm to 50 nm were fabricated by the off-axis magnetron sputtering technique. Single crystal (001) SrTiO3 (STO), (0001) sapphire (ALO), and (001) yttrium-stabilized ZrO2 (YSZ) were used as substrates. The surface morphology of thin films was characterized by atomic force microscope (AFM). The surface morphology of the thin films depends on the thickness. Thin films on STO substrates with the thickness less than 20 nm show a wave-like morphology, which indicates a two-dimension growth mode. With the thickness increases, some cracks and grains appear on the surface, which indicates the release of the lattice strain due to the lattice mismatch between the substrate and the films. The morphology became smoother with the thickness more than 30 nm, which indicates the full relaxation in strain for the film. The surface roughness and the average grain size increase with the thickness. The morphology for LCMO grows on ALO and YSZ show a rougher surface than that on STO. The rough surface morphology may indicate the wide metallic-to-insulating transition in transport properties.

Turnover of Texture in low rate Sputter-Deposited Nanocrystalline Molybdenum Films

1997 ◽  
Vol 472 ◽  
Author(s):  
Tilo P. Drüsedau ◽  
Frank Klabunde ◽  
Mirko Lohmann ◽  
Thomas Hempel ◽  
Jurgen Bläsing
Keyword(s):  
Film Thickness ◽  
Fiber Texture ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Sputter Deposited ◽  
20 Nm ◽  
Low Rate ◽  
Erosion Zone

ABSTRACTThe crystallite size and orientation in molybdenum films prepared by magnetron sputtering at a low rate of typical 1 Å/s and a pressure of 0.45 Pa was investigated by X-ray diffraction and texture analysis. The surface topography was studied using atomic force microscopy. Increasing the film thickness from 20 nm to 3 μm, the films show a turnover from a (110) fiber texture to a (211) mosaic-like texture. In the early state of growth (20 nm thickness) the development of dome-like structures on the surface is observed. The number of these structures increases with film thickness, whereas their size is weakly influenced. The effect of texture turnover is reduced by increasing the deposition rate by a factor of six, and it is absent for samples mounted above the center of the magnetron source. The effect of texture turnover is related to the bombardment of the films with high energetic argon neutrals resulting from backscattering at the target under oblique angle and causing resputtering. Due to the narrow angular distribution of the reflected argon, bombardment of the substrate plane is inhomogeneous and only significant for regions close to the erosion zone of the magnetron.

A Comparison of the Mechanical Properties of RF- and DC- Sputter-Deposited Cr Thin Films

2007 ◽  
Vol 546-549 ◽  
pp. 1695-1698 ◽  
Author(s):  
Min Woo Park ◽  
Wang Woo Lee ◽  
Jae Gab Lee ◽  
Chong Mu Lee
Keyword(s):  
Surface Roughness ◽  
Deposition Rate ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Plain Carbon Steel ◽  
Force Microscopy ◽  
Atomic Force ◽  
Sputtering Power ◽  
Sputter Deposited ◽  
Cr Film

Chromium (Cr) films were deposited on plain carbon steel sheets by DC and RF magnetron sputtering as well as by electroplating. Effects of DC or RF sputtering power on the deposition rate and properties such as hardness and surface roughness of the Cr films were investigated. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microcopy (SEM) analyses were performed to investigate the crystal structure, surface roughness, thickness of the Cr films. The deposition rate, hardness and surface roughness of the Cr film deposited by either DC or RF sputtering increase with the increase of sputtering power. The deposition rate and hardness of the Cr film deposited by DC sputtering are higher than those of the Cr film deposited by RF sputtering, but RF sputtering offers smoother surface. The sputter-deposited Cr film is harder and has a smoother surface than the electroplated one.

Macromolecular structures of biological specimens are not obscured by controlled osmium impregnation

1983 ◽  
Vol 41 ◽  
pp. 606-607
Author(s):  
Klaus-Ruediger Peters ◽  
Samuel A. Green
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Critical Point ◽  
Metal Films ◽  
High Magnification ◽  
Osmium Impregnation ◽  
Instrumental Resolution ◽  
20 Nm ◽  
Continuous Metal

High magnification imaging of macromolecules on metal coated biological specimens is limited only by wet preparation procedures since recently obtained instrumental resolution allows visualization of topographic structures as smal l as 1-2 nm. Details of such dimensions may be visualized if continuous metal films with a thickness of 2 nm or less are applied. Such thin films give sufficient contrast in TEM as well as in SEM (SE-I image mode). The requisite increase in electrical conductivity for SEM of biological specimens is achieved through the use of ligand mediated wet osmiuum impregnation of the specimen before critical point (CP) drying. A commonly used ligand is thiocarbohvdrazide (TCH), first introduced to TEM for en block staining of lipids and glvcomacromolecules with osmium black. Now TCH is also used for SEM. However, after ligand mediated osinification nonspecific osmium black precipitates were often found obscuring surface details with large diffuse aggregates or with dense particular deposits, 2-20 nm in size. Thus, only low magnification work was considered possible after TCH appl ication.

The morphologies and electrical properties of indium contacts on (100) cadmium telluride surfaces

1992 ◽  
Vol 50 (2) ◽  
pp. 1422-1423
Author(s):  
A.M. Letsoalo ◽  
M.E. Lee ◽  
E.O. de Neijs
Keyword(s):  
Electrical Properties ◽  
Cadmium Telluride ◽  
Methanol Solution ◽  
Electrical Characteristics ◽  
Metal Contacts ◽  
Deposition Technique ◽  
Interfacial Layers ◽  
Semiconductor Contacts ◽  
Grown Single Crystal ◽  
Diamond Abrasive

Semiconductor devices require metal contacts for efficient collection of electrical charge. The physics of these metal/semiconductor contacts assumes perfect, abrupt and continuous interfaces between the layers. However, in practice these layers are neither continuous nor abrupt due to poor nucleation conditions and the formation of interfacial layers. The effects of layer thickness, deposition rate and substrate stoichiometry have been previously reported. In this work we will compare the effects of a single deposition technique and multiple depositions on the morphology of indium layers grown on (100) CdTe substrates. The electrical characteristics and specific resistivities of the indium contacts were measured, and their relationships with indium layer morphologies were established.Semi-insulating (100) CdTe samples were cut from Bridgman grown single crystal ingots. The surface of the as-cut slices were mechanically polished using 5μm, 3μm, 1μm and 0,25μm diamond abrasive respectively. This was followed by two minutes immersion in a 5% bromine-methanol solution.

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