scholarly journals RF Sputtered MoO3 Thin Film on Si (100) for Gas Sensing Applications

2020 ◽  
Vol 70 (5) ◽  
pp. 505-510
Author(s):  
Akhilesh Pandey ◽  
Anoushka Dhaka ◽  
Chandni Kumari ◽  
Janesh Kaushik ◽  
Aman Arora ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Phase Formation ◽  
Gas Flow ◽  
Gas Sensing ◽  
Molybdenum Trioxide ◽  
Rf Magnetron Sputtering ◽  
Ex Situ ◽  
Cross Sectional ◽  
Sem Image ◽  
Sensing Applications

Molybdenum Trioxide (MoO3) films are grown on Si(100) substrates by reactive RF magnetron sputtering in plasma containing a mixture of Argon and Oxygen, using a pure Molybdenum target. In this paper, we report the deposition of (MoO3) films on Si(100) substrates under varying gas flow (O2 + Ar gas) (20 sccm to 30 sccm with the duration of deposition~ 1hr) by RF reactive magnetron sputtering at room temperature. To get crystalline MoO3 films annealing in O2 environment at 500 °C for 4 h is done. Phase formation and orientation of the film is characterized by Glancing incidence X-ray diffraction (GIXRD). The identification of the orthorhombic MoO3 phase is investigated by XRD and Raman spectroscopy. Raman lines at 819 cm-1 and 995 cm-1 are due to the (A1g, B1g) symmetric stretching (Mo-O–Mo) bond and asymmetric stretching band (Mo=O) respectively. Surface morphology and cross-sectional image of the deposited thin films were investigated by FE-SEM image. UV-Visible reflectance and cross-sectional FE-SEM image confirm the thickness of the MoO3 films with oxygen-rich and oxygen deficient phase formation occur. Reverse leakage current density of 20 sccm 1hr sample is low (1×10-6 mA/cm2) as compared to 30 sccm 1hr sample (1×10-3 mA/cm2). The higher leakage is due to crack formation during the ex-situ annealing of MoO3 films. This MoO3 films can be used in Gas sensing and switching devices.

Structure and Piezoelectric Properties of Aluminum Nitride Thin Films on Quartz Substrates Deposited by Reactive RF-Magnetron Sputtering

2013 ◽  
Vol 699 ◽  
pp. 308-313 ◽  
Author(s):  
Amorn Thedsakhulwong ◽  
Kitsakorn Locharoenrat ◽  
Warawoot Thowladda
Keyword(s):  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Nitrogen Concentration ◽  
Rf Magnetron Sputtering ◽  
Columnar Structure ◽  
Absorption Bands ◽  
Cross Sectional ◽  
Sem Image ◽  
Metal Insulator Metal ◽  
Columnar Grains

This paper presents the effect of nitrogen concentration (CN) on aluminum-nitride bonding formation, structure and morphology of the aluminum nitride films. The films on the unheated substrates were deposited by radio frequency reactive magnetron sputtering technology using an aluminum target under argon/nitrogen mixture atmosphere. The FTIR and Raman spectra of the films confirmed their absorption bands corresponding to E1(TO), A1(TO), and E2(high) vibration modes of the infrared active aluminum-nitride bonding. The crystallographic orientation of the films was optimized under CNof 40%. The cross-sectional FE-SEM image of the film under this condition showed the columnar structure. The dense columnar grains were uniformly observed on the films surface under all CN, except for CNof 20%. The bulk resistivity and piezoelectric property were investigated via the metal-insulator-metal structures. The results showed that the resistivity was in a range of 1014-1015Ωcm while the effective piezoelectric coefficient was 11.03 pm/V.

scholarly journals RF Magnetron Sputtering Deposition of TiO2 Thin Films in a Small Continuous Oxygen Flow Rate

Coatings ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 442 ◽  
Author(s):  
Octavian-Gabriel Simionescu ◽  
Cosmin Romanițan ◽  
Oana Tutunaru ◽  
Valentin Ion ◽  
Octavian Buiu ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Gas Flow ◽  
Anatase Phase ◽  
Rf Magnetron Sputtering ◽  
Ex Situ ◽  
Substrate Bias ◽  
Tio2 Thin Films ◽  
Rutile Tio2 ◽  
X Ray

Rutile titanium oxide (TiO2) thin films require more energy to crystallize than the anatase phase of TiO2. It is a prime candidate for micro-optoelectronics and is usually obtained either by high substrate temperature, applying a substrate bias, pulsed gas flow to modify the pressure, or ex situ annealing. In the present work, we managed to obtain high enough energy at the substrate in order for the particles to form rutile TiO2 at room temperature without any intentional substrate bias in a continuous gas flow. The rutile TiO2 thin films were deposited by a reactive radiofrequency magnetron sputtering system from a titanium target, in an argon/oxygen gas mixture. Investigations regarding the film’s structure and morphology were performed by X-ray diffraction (XRD), X-ray reflectivity (XRR), scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDAX), while the optical properties were investigated by means of ellipsometry.

SUPERCONDUCTING PROPERTIES OF BSCCO (2223) ULTRATHIN FILMS

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1757-1760
Author(s):  
L. NAVARRETE ◽  
A. MARIÑO ◽  
H. SÁNCHEZ
Keyword(s):  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Structural Characterization ◽  
Ultrathin Films ◽  
Rf Magnetron Sputtering ◽  
Ex Situ ◽  
Thermal Treatments ◽  
Superconducting Properties

Ultrathin films of (Bi–Pb)–Sr–Ca–Cu–O (2223) were produced by ex situ RF magnetron sputtering on MgO (100) substrates. Films with different thermal treatments and thickness varying between 30 nm and 300 nm were obtained and studied systematically. A structural characterization of these samples was carried out and correlated with their electrical properties and thickness.

scholarly journals Effect of Cr Atom Plasma Emission Intensity on the Characteristics of Cr-DLC Films Deposited by Pulsed-DC Magnetron Sputtering

Coatings ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 608
Author(s):  
Guang Li ◽  
Yi Xu ◽  
Yuan Xia
Keyword(s):  
Magnetron Sputtering ◽  
Emission Intensity ◽  
Gas Flow ◽  
Optical Emission ◽  
Scratch Test ◽  
Deposition Process ◽  
Plasma Emission ◽  
Cross Sectional ◽  
Pulsed Dc ◽  
Plasma Emission Intensity

A pulsed-dc (direct current) magnetron sputtering with a plasma emission monitor (PEM) system was applied to synthesize Cr-containing hydrogenated amorphous diamond-like carbon (Cr-DLC) films using a large-size industrial Cr target. The plasma emission intensity of a Cr atom at 358 nm wavelength was characterized by optical emission spectrometer (OES). C2H2 gas flow rate was precisely adjusted to obtain a stable plasma emission intensity. The relationships between Cr atom plasma emission intensity and the element concentration, cross-sectional morphology, deposition rate, microstructure, mechanical properties, and tribological properties of Cr-DLC films were investigated. Scanning electron microscope and Raman spectra were employed to analyze the chemical composition and microstructure, respectively. The mechanical and tribological behaviors were characterized and analyzed by using the nano-indentation, scratch test instrument, and ball-on-disk reciprocating friction/wear tester. The results indicate that the PEM system was successfully used in magnetron sputtering for a more stable Cr-DLC deposition process.

scholarly journals Tuning Stoichiometry and Structure of Pd-WO3−x Thin Films for Hydrogen Gas Sensing by High-Power Impulse Magnetron Sputtering

Materials ◽  
2020 ◽  
Vol 13 (22) ◽  
pp. 5101
Author(s):  
Nirmal Kumar ◽  
Stanislav Haviar ◽  
Jiří Rezek ◽  
Pavel Baroch ◽  
Petr Zeman
Keyword(s):  
Magnetron Sputtering ◽  
High Power ◽  
Gas Sensing ◽  
Pulse Length ◽  
Pd Nanoparticles ◽  
Hydrogen Gas ◽  
Sensory Response ◽  
Hydrogen Sensing ◽  
Sensing Applications ◽  
Deposition Parameters

By tuning the deposition parameters of reactive high-power impulse magnetron sputtering, specifically the pulse length, we were able to prepare WO3−x films with various stoichiometry and structure. Subsequently, the films were annealed in air at moderate temperature (350 °C). We demonstrate that the stoichiometry of the as-deposited films influences considerably the type of crystalline phase formed in the annealed films. The appropriate sub-stoichiometry of the films (approx. WO2.76) enabled crystallization of the monoclinic phase during the annealing. This phase is favorable for hydrogen sensing applications. To characterize the sensory behavior of the films, the tungsten oxide films were decorated by Pd nanoparticles before annealing and were assembled as a conductometric gas sensor. The sensory response of the films that crystallized in the monoclinic structure was proven to be superior to that of the films containing other phases.

Effect of Sputtering Pressure on Optimization of Titanium Dioxide Nanostructures Prepared by RF Magnetron Sputtering

2013 ◽  
Vol 667 ◽  
pp. 452-457 ◽  
Author(s):  
N.A.M. Asib ◽  
Mohamed Zahidi Musa ◽  
Saifollah Abdullah ◽  
Mohamad Rusop
Keyword(s):  
Surface Roughness ◽  
Titanium Dioxide ◽  
Magnetron Sputtering ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Transmission Spectra ◽  
Cross Sectional ◽  
Vis Spectroscopy ◽  
Sputtering Pressure ◽  
Tio2 Nanostructures

Titanium dioxide (TiO2) nanostructures were deposited on glass substrate by Radio Frequency (RF) magnetron sputtering. The samples deposited at various sputtering pressures and annealed at 723 K, were characterized using Atomic Force Microscope (AFM) to observe the surface morphology and topology, roughness properties and cross-sectional of TiO2 nanostructures, Field Emission Scanning Electrons Microscope (FESEM) to observe the particle sizes of TiO2 nanostructures and UV-vis spectroscopy to record the UV-vis transmission spectra. The aim of this paper is to determine which parameter of sputtering pressures influence the optimization of TiO2 nanostructures. AFM images show that the surface roughness of the samples decreases as the working pressures of sputtering increases. From FESEM images, it can be deduced that the higher the sputtering pressure, the smaller the particle size is. All the samples are highly transmittance with an average transmittance higher than 80% in the visible region as recorded by UV-vis transmission spectra. The relatively high transmittance of the sample indicates its low surface roughness and good homogeneity. For optimum TiO2 nanostructures deposited at various RF pressures it has the lowest surface roughness and the smallest TiO2 size particles with the indirect optical band gap of 3.41 eV.

Epitaxial cerium oxide buffer layers and YBa2Cu3O7−δ thin films for microwave device applications

1999 ◽  
Vol 14 (6) ◽  
pp. 2385-2393 ◽  
Author(s):  
Sissel N. Jacobsen ◽  
Lynnette D. Madsen ◽  
Ulf Helmersson
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Rf Magnetron Sputtering ◽  
Sample Surface ◽  
Columnar Structure ◽  
Buffer Layers ◽  
Ex Situ ◽  
Epitaxial Relationship ◽  
Cross Sectional ◽  
Appreciable Change

CeO2 films with thicknesses ranging from 8.8 to 199 nm were grown on Al2O3 (1102) (R-cut) substrates by off-axis rf magnetron sputtering. X-ray diffraction showed an epitaxial relationship with the CeO2 (001) planes parallel to the Al2O3 (1102) planes for all film thicknesses. Atomic force microscopy (AFM) revealed a rough surface morphology consisting of crystallites with lateral dimensions of 10–90 nm. In the thinnest film, these crystallites were regularly shaped and uniformly distributed on the substrate, while they were rectangularly shaped and oriented mainly in two directions, orthogonal to each other, in the thicker films. The surface roughness of the films increased with increasing layer thickness. Characterization of the microstructure was done by cross-sectional transmission electron microscopy (XTEM) and showed a polycrystalline, highly oriented, columnar structure with a top layer terminated by (111)-facets. High-quality YBa2Cu3O7−δ (YBCO) thin films were deposited directly onto the CeO2 layers. XTEM, rather surprisingly, showed a smooth interface between the YBCO and CeO2 layer. Postdeposition ex situ annealing was carried out on two CeO2 films and evaluated by AFM. Upon annealing samples at 930 °C, a relatively smooth morphology without facets was obtained. Annealing films at 800 °C caused no appreciable change in surface morphology, whereas igniting a YBCO plasma during a similar anneal clearly altered the sample surface, giving facets that were rounded.

scholarly journals Study the structural and optical properties of nanostructure ZnS thin film prepared by Radio frequency (RF) magnetron sputtering technique

2019 ◽  
Vol 24 (6) ◽  
pp. 93
Author(s):  
Azhar Mohammed Abed1 ◽  
, Abdulhussain K. Elttayef2 ◽  
Khalid Hamdi Razeg1
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Sem Image ◽  
Maximum Particle ◽  
Uv Visible ◽  
Different Thickness

Zinc sulfide (ZnS) thin films were deposited on glass substrate with different thickness by radiofrequency (RF) magnetron sputtering technique, and deals with effect of thickness on the optical and structural properties. The structure, surface morphology and optical properties are investigated by x-ray diffraction (XRD), atomic forces microscopy (AFM), scanning electron microscopy, and UV-visible spectrophotometer.  The result of XRD show that ZnS thin film exhibited cubic structure with strong peaks at (111) as highly preferential orientation. The maximum particle size of films was found to be 14.4 at thickness 868nm. SEM image show that the shape of grain is like spherical. The result of AFM shows that the surface roughness decrease with increasing in film thickness from (6.19 to 1.45)nm. The result of UV-visible suggests that transmittance increasing with increases in film thickness, the value maximum of ZnS transmission was 87.82%  at thickness 868nm, can be very much useful in the field of solar cell and optical sensor .   http://dx.doi.org/10.25130/tjps.24.2019.113

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