Structure and Piezoelectric Properties of Aluminum Nitride Thin Films on Quartz Substrates Deposited by Reactive RF-Magnetron Sputtering

2013 ◽  
Vol 699 ◽  
pp. 308-313 ◽  
Author(s):  
Amorn Thedsakhulwong ◽  
Kitsakorn Locharoenrat ◽  
Warawoot Thowladda
Keyword(s):  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Nitrogen Concentration ◽  
Rf Magnetron Sputtering ◽  
Columnar Structure ◽  
Absorption Bands ◽  
Cross Sectional ◽  
Sem Image ◽  
Metal Insulator Metal ◽  
Columnar Grains

This paper presents the effect of nitrogen concentration (CN) on aluminum-nitride bonding formation, structure and morphology of the aluminum nitride films. The films on the unheated substrates were deposited by radio frequency reactive magnetron sputtering technology using an aluminum target under argon/nitrogen mixture atmosphere. The FTIR and Raman spectra of the films confirmed their absorption bands corresponding to E1(TO), A1(TO), and E2(high) vibration modes of the infrared active aluminum-nitride bonding. The crystallographic orientation of the films was optimized under CNof 40%. The cross-sectional FE-SEM image of the film under this condition showed the columnar structure. The dense columnar grains were uniformly observed on the films surface under all CN, except for CNof 20%. The bulk resistivity and piezoelectric property were investigated via the metal-insulator-metal structures. The results showed that the resistivity was in a range of 1014-1015Ωcm while the effective piezoelectric coefficient was 11.03 pm/V.

Nitrogen Concentrations on Structural and Optical Properties of Aluminum Nitride Films Deposited by Reactive RF-Magnetron Sputtering

2013 ◽  
Vol 631-632 ◽  
pp. 186-191
Author(s):  
Amorn Thedsakhulwong ◽  
Kitsakorn Locharoenrat ◽  
Warawoot Thowladda
Keyword(s):  
Refractive Index ◽  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Band Gap ◽  
Optical Band Gap ◽  
Nitrogen Concentration ◽  
Rf Magnetron Sputtering ◽  
Band Gap Energy ◽  
Gap Energy ◽  
Nitrogen Concentrations

We have fabricated Aluminum Nitride (AlN) films on the quartz substrates using RF-reactive magnetron sputtering method. The conditions of the films have been performed under different concentration ratios between nitrogen and argon. We have found that all obtained films were transparent in visible wavelength. By using X-ray diffraction (XRD) technique, it was found that the (002), (102) and (103) orientations were shown in XRD patterns. The (002) orientation was dominant when nitrogen concentration (CN) was at 40%. On the other hand, the refractive index and optical band gap energy of the films were determined as a function of CN. We have found that the refractive index weakly depended on CN, while optical band gap energy did not.

Aluminum-Copper Bilayers Thin Films Deposited at Room Temperature by RF Magnetron Sputtering

2014 ◽  
Vol 606 ◽  
pp. 105-109
Author(s):  
Zulhelmi Alif Abdul Halim ◽  
Muhamad Azizi Mat Yajid ◽  
Zulkifli Mohd Rosli ◽  
Riyaz Ahmad M. Ali
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Grazing Incidence ◽  
Rf Magnetron Sputtering ◽  
Columnar Structure ◽  
Cross Sectional ◽  
X Ray ◽  
Temperature Deposition ◽  
20 Nm

In this work, the effects of room temperature deposition on the structural properties of Al-Cu bilayers thin films were investigated. The bilayers were sputter deposited by RF magnetron sputtering on Si {100} wafers without substrate heating. The thickness of each layer is approximately 500 nm thick. Characterization were performed with grazing incidence X-ray diffraction (XRD) cross-sectional field emission scanning electron microscope (FE-SEM) with chemical analysis by energy dispersive X-ray (EDX) and atomic force microscope (AFM). It was found polycrystalline Al and Cu thin films have been grown with {111} preferred growth orientation with very fine crystallites size (less than 20 nm). The bilayers were in non-strained condition, but each layer shows different morphologies between the columnar and non columnar structure. AFM analysis revealed that the bilayers top surface appears to have higher surface roughness (Ra= 20 nm) due to low adatoms surface mobility during room temperature deposition.

scholarly journals RF Sputtered MoO3 Thin Film on Si (100) for Gas Sensing Applications

2020 ◽  
Vol 70 (5) ◽  
pp. 505-510
Author(s):  
Akhilesh Pandey ◽  
Anoushka Dhaka ◽  
Chandni Kumari ◽  
Janesh Kaushik ◽  
Aman Arora ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Phase Formation ◽  
Gas Flow ◽  
Gas Sensing ◽  
Molybdenum Trioxide ◽  
Rf Magnetron Sputtering ◽  
Ex Situ ◽  
Cross Sectional ◽  
Sem Image ◽  
Sensing Applications

Molybdenum Trioxide (MoO3) films are grown on Si(100) substrates by reactive RF magnetron sputtering in plasma containing a mixture of Argon and Oxygen, using a pure Molybdenum target. In this paper, we report the deposition of (MoO3) films on Si(100) substrates under varying gas flow (O2 + Ar gas) (20 sccm to 30 sccm with the duration of deposition~ 1hr) by RF reactive magnetron sputtering at room temperature. To get crystalline MoO3 films annealing in O2 environment at 500 °C for 4 h is done. Phase formation and orientation of the film is characterized by Glancing incidence X-ray diffraction (GIXRD). The identification of the orthorhombic MoO3 phase is investigated by XRD and Raman spectroscopy. Raman lines at 819 cm-1 and 995 cm-1 are due to the (A1g, B1g) symmetric stretching (Mo-O–Mo) bond and asymmetric stretching band (Mo=O) respectively. Surface morphology and cross-sectional image of the deposited thin films were investigated by FE-SEM image. UV-Visible reflectance and cross-sectional FE-SEM image confirm the thickness of the MoO3 films with oxygen-rich and oxygen deficient phase formation occur. Reverse leakage current density of 20 sccm 1hr sample is low (1×10-6 mA/cm2) as compared to 30 sccm 1hr sample (1×10-3 mA/cm2). The higher leakage is due to crack formation during the ex-situ annealing of MoO3 films. This MoO3 films can be used in Gas sensing and switching devices.

Effect of Argon Flow to the Growth of Aluminum Nitride Thin Films using RF Magnetron Sputtering

2019 ◽  
Author(s):  
Muliana Tahan ◽  
Nafarizal Nayan ◽  
Mohd Zainizan Sahdan ◽  
Anis Suhaili Bakri ◽  
Amaliyana Raship ◽  
...  
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Argon Flow

Effect of Sputtering Pressure on Optimization of Titanium Dioxide Nanostructures Prepared by RF Magnetron Sputtering

2013 ◽  
Vol 667 ◽  
pp. 452-457 ◽  
Author(s):  
N.A.M. Asib ◽  
Mohamed Zahidi Musa ◽  
Saifollah Abdullah ◽  
Mohamad Rusop
Keyword(s):  
Surface Roughness ◽  
Titanium Dioxide ◽  
Magnetron Sputtering ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Transmission Spectra ◽  
Cross Sectional ◽  
Vis Spectroscopy ◽  
Sputtering Pressure ◽  
Tio2 Nanostructures

Titanium dioxide (TiO2) nanostructures were deposited on glass substrate by Radio Frequency (RF) magnetron sputtering. The samples deposited at various sputtering pressures and annealed at 723 K, were characterized using Atomic Force Microscope (AFM) to observe the surface morphology and topology, roughness properties and cross-sectional of TiO2 nanostructures, Field Emission Scanning Electrons Microscope (FESEM) to observe the particle sizes of TiO2 nanostructures and UV-vis spectroscopy to record the UV-vis transmission spectra. The aim of this paper is to determine which parameter of sputtering pressures influence the optimization of TiO2 nanostructures. AFM images show that the surface roughness of the samples decreases as the working pressures of sputtering increases. From FESEM images, it can be deduced that the higher the sputtering pressure, the smaller the particle size is. All the samples are highly transmittance with an average transmittance higher than 80% in the visible region as recorded by UV-vis transmission spectra. The relatively high transmittance of the sample indicates its low surface roughness and good homogeneity. For optimum TiO2 nanostructures deposited at various RF pressures it has the lowest surface roughness and the smallest TiO2 size particles with the indirect optical band gap of 3.41 eV.

Epitaxial cerium oxide buffer layers and YBa2Cu3O7−δ thin films for microwave device applications

1999 ◽  
Vol 14 (6) ◽  
pp. 2385-2393 ◽  
Author(s):  
Sissel N. Jacobsen ◽  
Lynnette D. Madsen ◽  
Ulf Helmersson
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Rf Magnetron Sputtering ◽  
Sample Surface ◽  
Columnar Structure ◽  
Buffer Layers ◽  
Ex Situ ◽  
Epitaxial Relationship ◽  
Cross Sectional ◽  
Appreciable Change

CeO2 films with thicknesses ranging from 8.8 to 199 nm were grown on Al2O3 (1102) (R-cut) substrates by off-axis rf magnetron sputtering. X-ray diffraction showed an epitaxial relationship with the CeO2 (001) planes parallel to the Al2O3 (1102) planes for all film thicknesses. Atomic force microscopy (AFM) revealed a rough surface morphology consisting of crystallites with lateral dimensions of 10–90 nm. In the thinnest film, these crystallites were regularly shaped and uniformly distributed on the substrate, while they were rectangularly shaped and oriented mainly in two directions, orthogonal to each other, in the thicker films. The surface roughness of the films increased with increasing layer thickness. Characterization of the microstructure was done by cross-sectional transmission electron microscopy (XTEM) and showed a polycrystalline, highly oriented, columnar structure with a top layer terminated by (111)-facets. High-quality YBa2Cu3O7−δ (YBCO) thin films were deposited directly onto the CeO2 layers. XTEM, rather surprisingly, showed a smooth interface between the YBCO and CeO2 layer. Postdeposition ex situ annealing was carried out on two CeO2 films and evaluated by AFM. Upon annealing samples at 930 °C, a relatively smooth morphology without facets was obtained. Annealing films at 800 °C caused no appreciable change in surface morphology, whereas igniting a YBCO plasma during a similar anneal clearly altered the sample surface, giving facets that were rounded.

scholarly journals Study the structural and optical properties of nanostructure ZnS thin film prepared by Radio frequency (RF) magnetron sputtering technique

2019 ◽  
Vol 24 (6) ◽  
pp. 93
Author(s):  
Azhar Mohammed Abed1 ◽  
, Abdulhussain K. Elttayef2 ◽  
Khalid Hamdi Razeg1
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Sem Image ◽  
Maximum Particle ◽  
Uv Visible ◽  
Different Thickness

Zinc sulfide (ZnS) thin films were deposited on glass substrate with different thickness by radiofrequency (RF) magnetron sputtering technique, and deals with effect of thickness on the optical and structural properties. The structure, surface morphology and optical properties are investigated by x-ray diffraction (XRD), atomic forces microscopy (AFM), scanning electron microscopy, and UV-visible spectrophotometer.  The result of XRD show that ZnS thin film exhibited cubic structure with strong peaks at (111) as highly preferential orientation. The maximum particle size of films was found to be 14.4 at thickness 868nm. SEM image show that the shape of grain is like spherical. The result of AFM shows that the surface roughness decrease with increasing in film thickness from (6.19 to 1.45)nm. The result of UV-visible suggests that transmittance increasing with increases in film thickness, the value maximum of ZnS transmission was 87.82%  at thickness 868nm, can be very much useful in the field of solar cell and optical sensor .   http://dx.doi.org/10.25130/tjps.24.2019.113

Growth and Characterization of ZnO Thin Film by RF Magnetron Sputtering for Photoacoustic Tomography Sensor

2013 ◽  
Vol 1494 ◽  
pp. 19-24 ◽  
Author(s):  
Takuya Matsuo ◽  
Shuhei Okuda ◽  
Katsuyoshi Washio
Keyword(s):  
Magnetron Sputtering ◽  
Quartz Substrate ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Optical Transmittance ◽  
Deposition Process ◽  
Photoacoustic Tomography ◽  
Diffraction Measurement ◽  
Zno Film ◽  
Cross Sectional

ABSTRACTTo apply thin ZnO film to photoacoustic tomography sensors, we investigated methods to improve its piezoelectricity with high optical transmittance. ZnO film was deposited by RF magnetron sputtering on a quartz substrate with various changes of the following conditions: RF sputtering power, Ar gas pressure, and substrate temperature (TSUB). The preliminary optimization of sputtering conditions is to form the ZnO film with good c-axis crystalline alignment. The results of X-ray diffraction measurement and cross-sectional observations indicated that the high-TSUB condition was preferable. This was because the desorption of Zn due to high-TSUB during the deposition process induced the formation of excellent columnar grains normal to the substrate. To enhance the piezoresponse, the substitution of Zn with different crystal-radius atoms was investigated, the aim being to increase the electrically neutral dipole moment by the partial displacement of the Zn-O bond. The transition metal V, with the potential to have the various configurations and coordination numbers, was selected as the dopant. As a result, it was confirmed that the diffraction peak from the (002) plane shifted to low angles with small degradation of the diffraction intensities.

scholarly journals Comparison of AlN films grown by RF magnetron sputtering and ion-assisted molecular beam epitaxy

1993 ◽  
Vol 300 ◽  
Author(s):  
J. Chan ◽  
T. Fu ◽  
N. W. Cheung ◽  
J. Ross ◽  
N. Newman ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Optical Absorption ◽  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Rf Magnetron Sputtering ◽  
Nitrogen Plasma ◽  
Absorption Characteristics

ABSTRACTCrystalline aluminum nitride (AIN) thin films were formed on various substrates by using RF magnetron sputtering of an Al target in a nitrogen plasma and also by ion-assisted molecular beam epitaxy (IAMBE). Basal-oriented AIN/(1 11) Si showed a degradation of crystallinity with increased substrate temperature from 550 to 770 °C, while the crystallinity of AIN/ (0001) A12O3 samples improved from 700 to 850 °C. The optical absorption characteristics of the AIN/(0001) A12O3 films as grown by both deposition methods revealed a decrease in subbandgap absorption with increased substrate temperature.

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