scholarly journals Multiple output CMOS current amplifier

2016 ◽  
Vol 64 (2) ◽  
pp. 301-306 ◽  
Author(s):  
B. Pankiewicz
Keyword(s):  
Low Voltage ◽  
Current Mirror ◽  
Mos Transistors ◽  
Output Current ◽  
Current Amplifier ◽  
Low Voltage Operation ◽  
Current Consumption ◽  
Current Follower ◽  
Differential Pair ◽  
A Current

Abstract In this paper the multiple output current amplifier basic cell is proposed. The triple output current mirror and current follower circuit are described in detail. The cell consists of a split nMOS differential pair and accompanying biasing current sources. It is suitable for low voltage operation and exhibits highly linear DC response. Through cell devices scaling, not only unity, but also any current gains are achievable. As examples, a current amplifier and bandpass biquad section designed in CMOS TSMC 90nm technology are presented. The current amplifier is powered from a 1.2V supply. MOS transistors scaling was chosen to obtain output gains equal to -2, 1 and 2. Simulated real gains are -1.941, 0.966 and 1.932 respectively. The 3dB passband obtained is above 20MHz, while current consumption is independent of input and output currents and is only 7.77μA. The bandpass biquad section utilises the previously presented amplifier, two capacitors and one resistor, and has a Q factor equal to 4 and pole frequency equal to 100 kHz.

scholarly journals Microwatt Switched Capacitor Circuit Design

1982 ◽  
Vol 9 (4) ◽  
pp. 263-273 ◽  
Author(s):  
E. Vittoz
Keyword(s):  
Low Voltage ◽  
Settling Time ◽  
Switched Capacitor ◽  
Mos Transistors ◽  
Weak Inversion ◽  
Switched Capacitor Circuits ◽  
Low Voltage Operation ◽  
Biquadratic Filter ◽  
Cmos Implementation ◽  
Current Drain

The micropower CMOS implementation of the three basic components of switched capacitor circuits is discussed. Switches must be carefully designed to allow low voltage operation and compensation of clock feed-through by dummy transistors. Matched capacitors can be implemented in single polysilicon technologies primarily designed for digital micropower circuits. Excellent micropower amplifiers are realized by using simple one-stage circuits which take advantage of the special behaviour of MOS transistors in weak inversion. Noise is shown to be independent of current level which only influences the settling time. Various ways of improving the settling time while keeping a very low current drain are described. A method of calculating the noise of a biquadratic filter is followed by examples of a filter and of other switched capacitor circuits.

A Current-Mirror Winner-Take-All Sense Amplifier for Low Voltage SRAMs

2013 ◽  
Vol E96.C (9) ◽  
pp. 1205-1207
Author(s):  
Song JIA ◽  
Heqing XU ◽  
Fengfeng WU ◽  
Yuan WANG
Keyword(s):  
Low Voltage ◽  
Current Mirror ◽  
Sense Amplifier ◽  
Winner Take All ◽  
A Current ◽  
Take All

scholarly journals The CMOS Highly Linear Current Amplifier with Current Controlled Gain for Sensor Measurement Applications

Sensors ◽  
2020 ◽  
Vol 20 (16) ◽  
pp. 4653
Author(s):  
Roman Prokop ◽  
Roman Sotner ◽  
Vilem Kledrowetz
Keyword(s):  
Precise Measurement ◽  
Supply Voltage ◽  
Harmonic Distortion ◽  
Gain Control ◽  
Mos Transistors ◽  
Current Amplifier ◽  
Sensor Applications ◽  
Current Consumption ◽  
Sensor Measurement ◽  
High Output

This paper introduces a new current-controlled current-amplifier suitable for precise measurement applications. This amplifier was developed with strong emphasis on linearity leading to low total harmonic distortion (THD) of the output signal, and on linearity of the gain control. The presented circuit is characterized by low input and high output impedances. Current consumption is significantly smaller than with conventional quadratic current multipliers and is comparable in order to the maximum processed input current, which is ±200 µA. This circuit is supposed to be used in many sensor applications, as well as a precise current multiplier for general analog current signal processing. The presented amplifier (current multiplier) was designed by an uncommon topology based on linear sub-blocks using MOS transistors working in their linear region. The described circuit was designed and fabricated in a C035 I3T25 0.35-µm ON Semiconductor process because of the demand of the intended application for higher supply voltage. Nevertheless, the topology is suitable also for modern smaller CMOS technologies and lower supply voltages. The performance of the circuit was verified by laboratory measurement with parameters comparable to the Cadence simulation results and presented here.

Current State of Biological High-Resolution Scanning Electron Microscopy

1988 ◽  
Vol 46 ◽  
pp. 180-181 ◽  
Author(s):  
Klaus-Ruediger Peters
Keyword(s):  
High Performance ◽  
Low Voltage ◽  
Backscattered Electrons ◽  
Lens Position ◽  
Low Voltage Operation ◽  
Signal Collection ◽  
Probe Size ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

A new generation of high performance field emission scanning electron microscopes (FSEM) is now commercially available (JEOL 890, Hitachi S 900, ISI OS 130-F) characterized by an "in lens" position of the specimen where probe diameters are reduced and signal collection improved. Additionally, low voltage operation is extended to 1 kV. Compared to the first generation of FSEM (JE0L JSM 30, Hitachi S 800), which utilized a specimen position below the final lens, specimen size had to be reduced but useful magnification could be impressively increased in both low (1-4 kV) and high (5-40 kV) voltage operation, i.e. from 50,000 to 200,000 and 250,000 to 1,000,000 x respectively.At high accelerating voltage and magnification, contrasts on biological specimens are well characterized1 and are produced by the entering probe electrons in the outmost surface layer within -vl nm depth. Backscattered electrons produce only a background signal. Under these conditions (FIG. 1) image quality is similar to conventional TEM (FIG. 2) and only limited at magnifications >1,000,000 x by probe size (0.5 nm) or non-localization effects (%0.5 nm).

High resolution at low voltage: A new approach

1989 ◽  
Vol 47 ◽  
pp. 76-77
Author(s):  
Arthur V. Jones
Keyword(s):  
Low Voltage ◽  
Emission Sources ◽  
New Approach ◽  
Design Concepts ◽  
Probe Diameter ◽  
Low Voltage Operation ◽  
Sufficient Intensity ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Immersion Type

With the introduction of field-emission sources and “immersion-type” objective lenses, the resolution obtainable with modern scanning electron microscopes is approaching that obtainable in STEM and TEM-but only with specific types of specimens. Bulk specimens still suffer from the restrictions imposed by internal scattering and the need to be conducting. Advances in coating techniques have largely overcome these problems but for a sizeable body of specimens, the restrictions imposed by coating are unacceptable.For such specimens, low voltage operation, with its low beam penetration and freedom from charging artifacts, is the method of choice.Unfortunately the technical dificulties in producing an electron beam sufficiently small and of sufficient intensity are considerably greater at low beam energies — so much so that a radical reevaluation of convential design concepts is needed.The probe diameter is usually given by

Low-Voltage Variable Gain Current Amplifier for High-Voltage Signal Processing

2009 ◽  
Vol 129 (8) ◽  
pp. 1511-1517
Author(s):  
Nicodimus Retdian ◽  
Jieting Zhang ◽  
Takahide Sato ◽  
Shigetaka Takagi
Keyword(s):  
Signal Processing ◽  
High Voltage ◽  
Low Voltage ◽  
Current Amplifier ◽  
Variable Gain ◽  
Voltage Signal
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