Transformations in Thin Solid Layers: The Reversible Polymerization-Depolymerization of 2,6-Di-n-propyl- 1,3,5,7-tetraoxa-2,6-dibora-4,8-octalindiones at Low Temperatures

1985 ◽  
Vol 40 (2) ◽  
pp. 222-228 ◽  
Author(s):  
Mohamed Yalpani ◽  
E. Klotzbücher
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Title Compound ◽  
Low Temperatures ◽  
Three Dimensional ◽  
Visible Spectroscopy ◽  
Varying Thickness ◽  
Spontaneous Formation ◽  
Uv Visible ◽  
Lattice Energies

The course of Aggregation of molecules of the title compound (1b) through different, spectroscopically discernible and chemically identifiable forms of associations could be followed by matrix isolation and thin film infrared and UV-visible spectroscopy. It was found that molecules of 1b in thin films form clusters which at low temperatures interact weakly, probably through the carbonyl oxygens of one and the boron atoms of the neighbouring molecules. On warming to 260 K this association gradually takes the form of more defined chelate bonds, probably with ordered three-dimensional intermolecular structures. Above this temperature spontaneous formation of crystallites of the previously reported ʻhotʼ and ʻcoldʼ modifications was observed. Studies with films of varying thickness indicate an interdependence of crystallite size and lattice energies.

scholarly journals Synthesis and Characterization of C, SnO2, and C+SnO2 Materials through Resistance Measurement, UV-Visible Spectroscopy, and X-Ray Diffraction

2018 ◽  
Vol 1 (1) ◽  
pp. 29
Author(s):  
Nabila Rahmasari ◽  
Azka Fathia ◽  
Wipsar Dwandaru
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Layers ◽  
Resistance Measurement ◽  
X Ray Diffraction ◽  
Visible Spectroscopy ◽  
X Ray ◽  
Three Samples ◽  
Sno2 Thin Films ◽  
Uv Visible

The objectives of this study are i) to determine an electrical property, especially resistance, of carbon  (C), tin oxide (SnO2), and C+SnO2 thin films. ii) to determine the optical property of C, SnO2 and C+SnO2 thin films based on UV-visible spectroscopy (UV-Vis). and iii) to determine the crystallinity of C, SnO2 and C+SnO2 thin films based on X-ray diffraction (XRD). The results show different physical characteristics from the three samples of the thin film layers. The result on the resistance measurement shows that C thin film has the lowest resistance, followed by SnO2, and C+SnO2 thin films with resistance values of 1.0769 mΩ, 1.0774 mΩ, and 3.8875 mΩ, respectively. The UV-Vis results show a peak for each of the thin film at 256 nm, 257 nm, and 258 nm for C, SnO2, and C+SnO2, respectively, which is in the UV area. The XRD results show that the C and SnO2 thin layers are amorphous while C+SnO2 thin layer is crystal

scholarly journals Tip-Based Nanomachining on Thin Films: A Mini Review

2021 ◽  
Author(s):  
Shunyu Chang ◽  
Yanquan Geng ◽  
Yongda Yan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Data Storage ◽  
Three Dimensional ◽  
Maintenance Cost ◽  
Two Dimensional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current State ◽  
Two Dimensional Materials

AbstractAs one of the most widely used nanofabrication methods, the atomic force microscopy (AFM) tip-based nanomachining technique offers important advantages, including nanoscale manipulation accuracy, low maintenance cost, and flexible experimental operation. This technique has been applied to one-, two-, and even three-dimensional nanomachining patterns on thin films made of polymers, metals, and two-dimensional materials. These structures are widely used in the fields of nanooptics, nanoelectronics, data storage, super lubrication, and so forth. Moreover, they are believed to have a wide application in other fields, and their possible industrialization may be realized in the future. In this work, the current state of the research into the use of the AFM tip-based nanomachining method in thin-film machining is presented. First, the state of the structures machined on thin films is reviewed according to the type of thin-film materials (i.e., polymers, metals, and two-dimensional materials). Second, the related applications of tip-based nanomachining to film machining are presented. Finally, the current situation of this area and its potential development direction are discussed. This review is expected to enrich the understanding of the research status of the use of the tip-based nanomachining method in thin-film machining and ultimately broaden its application.

scholarly journals Epoxy/Silicone Blend Loaded with N-Doped CNT Composites: Study on the Optoelectronic Properties

2021 ◽  
Vol 2021 ◽  
pp. 1-11
Author(s):  
Younes Ziat ◽  
Hamza Belkhanchi ◽  
Maryama Hammi ◽  
Ousama Ifguis
Keyword(s):  
Thin Films ◽  
Urbach Energy ◽  
Optical Transition ◽  
Sol Gel ◽  
Visible Range ◽  
Visible Spectroscopy ◽  
Glass Substrates ◽  
Optical Gap ◽  
Ito Glass ◽  
Uv Visible

Thin films of epoxy/silicone loaded with N-CNT were prepared by a method of sol-gel and deposited on ITO glass substrates at room temperature. The properties of the loaded monolayer samples (0.00, 0.07, 0.1, and 0.2 wt% N-CNTs) were analyzed by UV-visible spectroscopy. The transmittance for the unloaded thin films is 88%, and an average transmittance for the loaded thin film is about 42 to 67% in the visible range. The optical properties were studied from UV-visible spectroscopy to examine the transmission spectrum, optical gap, Tauc verified optical gap, and Urbach energy, based on the envelope method proposed by Swanepoel (1983). The results indicate that the adjusted optical gap of the film has a direct optical transition with an optical gap of 3.61 eV for unloaded thin films and 3.55 to 3.19 eV for loaded thin films depending on the loading rate. The optical gap is appropriately adapted to the direct transition model proposed by Tauc et al. (1966); its value was 3.6 eV for unloaded thin films and from 3.38 to 3.1 eV for loaded thin films; then, we determined the Urbach energy which is inversely variable with the optical gap, where Urbach’s energy is 0.19 eV for the unloaded thin films and varies from 0.43 to 1.33 eV for the loaded thin films with increasing rate of N-CNTs. Finally, nanocomposite epoxy/silicone N-CNT films can be developed as electrically conductive materials with specific optical characteristics, giving the possibility to be used in electrooptical applications.

Effect of Dip-Coating Cycle on Some Physical Properties of Cu2NiSnS4 Thin Films for Photovoltaic Applications

2021 ◽  
Author(s):  
Ahmed ZITI ◽  
Bouchaib HARTITI ◽  
Amine BELAFHAILI ◽  
Hicham LABRIM ◽  
Salah FADILI ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Sol Gel ◽  
Dip Coating ◽  
Visible Spectroscopy ◽  
X Ray ◽  
Uv Visible ◽  
The Impact ◽  
Scanning Electron

Abstract Quaternary semiconductor Cu2NiSnS4 thin film was made by the sol-gel method associated to dip-coating technique on ordinary glass substrates. In this paper, we have studied the impact of dip-coating cycle at different cycles: 4, 5 and 6 on the structural, compositional, morphological, optical and electrical characteristics. CNTS thin films have been analyzed by various characterization techniques including: X-ray diffractometer (XRD), Raman measurements, scanning electron microscope (SEM), energy dispersive X-ray spectroscope (EDS), UV-visible spectroscopy and four-point probe method. XRD spectra demonstrated the formation of cubic Cu2NiSnS4 with privileged orientation at (111) plane. Crystallite size of cubic CNTS thin films increase with from 6.30 to 9.52 with dip-coating cycle augmented. Raman scattering confirmed the existence of CNTS thin films by Raman vibrational mode positioned at 332 cm− 1. EDS investigations showed near-stoichiometry of CNTS sample deposited at 5 cycles. Scanning electron microscope showed uniform surface morphologies without any crack. UV-visible spectroscopy indicated that the optical absorption values are larger than 104 cm− 1, Estimated band gap energy of CNTS absorber layers decrease from 1.64 to 1.5 eV with dip-coating cycle increased. The electrical conductivity of CNTS thin films increase from 0.19 to 4.16 (Ω cm)-1. These characteristics are suitable for solar cells applications.

scholarly journals Synthesis, Crystal Structure, and Properties of a Zn(II) Coordination Polymer Based on a Difunctional Ligand Containing Triazolyl and Carboxyl Groups

Crystals ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 424 ◽  
Author(s):  
Jia-Le Li ◽  
Wei-Dong Li ◽  
Zi-Wei He ◽  
Shuai-Shuai Han ◽  
Shui-Sheng Chen
Keyword(s):  
Coordination Polymer ◽  
Weak Interactions ◽  
Layer Structure ◽  
Three Dimensional ◽  
Stacking Interactions ◽  
Structure And Properties ◽  
X Ray Diffraction ◽  
Visible Spectroscopy ◽  
X Ray ◽  
Uv Visible

A new compound, namely, [Zn(L)2]n (1) was obtained by the reaction of 2-methyl-4-(4H-1,2,4-triazol-4-yl) benzoic acid (HL) with ZnSO4·7H2O, and the compound was characterized by single-crystal X-ray diffraction, infrared spectroscopy, elemental analysis, powder X-ray diffraction (PXRD), and thermogravimetric analysis. The linear HL ligands were deprotonated to be L− anions and act as two-connectors to link Zn2+ to form a two-dimensional (2D) lay structure with (4, 4) topology. The large vacancy of 2D framework allows another layer structure to interpenetrate, resulting in the formation of 2D + 2D → 2D parallel interpenetration in 1. The weak interactions, such as hydrogen bonding and π–π stacking interactions, connect the adjacent 2D layers into a three-dimensional (3D) coordination polymer. The solid-state UV-visible spectroscopy and luminescent property have also been studied.

Study on integration of aluminum-doped zinc oxide (AZO) thin films with graphene oxide (GO)

2018 ◽  
Vol 32 (19) ◽  
pp. 1840044
Author(s):  
Aditya Dalal ◽  
Animesh Mandal ◽  
Shubhada Adhi ◽  
Kiran Adhi
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Graphene Oxide ◽  
X Ray Diffraction ◽  
Visible Spectroscopy ◽  
X Ray ◽  
Transmission Electron ◽  
Vis Spectroscopy ◽  
Aluminum Doped Zinc Oxide ◽  
Uv Visible

Aluminum (0.5 at.%)-doped ZnO (AZO) thin films were deposited by pulsed laser deposition technique (PLD) in oxygen ambient of 10[Formula: see text] Torr. The deposited thin films were characterized by x-ray diffraction (XRD), photoluminescence (PL), Raman spectroscopy and uv–visible spectroscopy (UV–vis). Next, graphene oxide (GO) was synthesized by Hummers method and was characterized by XRD, UV–vis spectroscopy, Raman spectroscopy and transmission electron microscopy (TEM). Thereafter, GO solution was drop-casted on AZO thin films. These films were then characterized by Raman Spectroscopy, UV–vis spectroscopy and PL. Attempt is being made to comprehend the modifications in properties brought about by integration.

Simulation of 3D Films Deposited by Glancing Angle Deposition Using 3D-Films

2000 ◽  
Vol 616 ◽  
Author(s):  
T. Smy ◽  
D. Vick ◽  
M. J. Brett ◽  
S. K. Dew ◽  
A. T. Wu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Three Dimensional ◽  
Thin Film Deposition ◽  
Glancing Angle Deposition ◽  
Film Deposition ◽  
Porous Thin Films ◽  
Glancing Angle ◽  
Memory Resources ◽  
Angle Deposition

AbstractA new fully three dimensional (3D) ballistic deposition simulator 3D-FILMS has been developed for the modeling of thin film deposition and structure. The simulator may be implemented using the memory resources available to workstations. In order to illustrate the capabilities of 3D-FILMS, we apply it to the growth of engineered porous thin films produced by the technique of GLancing Angle Deposition (GLAD).

Ultra high-yield one-step synthesis of conductive and superhydrophobic three-dimensional mats of carbon nanofibers via full catalysis of unconstrained thin films

2014 ◽  
Vol 2 (36) ◽  
pp. 15118-15123 ◽  
Author(s):  
Efrat Shawat ◽  
Ilana Perelshtein ◽  
Andrew Westover ◽  
Cary L. Pint ◽  
Gilbert D. Nessim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Carbon Nanofibers ◽  
Three Dimensional ◽  
High Yield ◽  
One Step

We directly synthesized large conductive and superhydrophobic 3D mats of entangled carbon nanofibers (CNFs). The mechanism is based on thin film delamination and bi-directional catalytic CNF growth.

Influence of Substrate Temperature on the Optoelectronic Properties of CuPc Thin Film

2015 ◽  
Vol 1105 ◽  
pp. 123-126
Author(s):  
Tao Yu Zou ◽  
Xiao Lin Ji ◽  
Lei Ming Yu ◽  
Zhen Fang Qiao ◽  
Yi Ji Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Copper Phthalocyanine ◽  
Visible Spectroscopy ◽  
X Ray ◽  
Different Temperatures ◽  
Uv Visible ◽  
Influence Of Substrate ◽  
Transmission And Absorption ◽  
Substrate Temperatures ◽  
Scanning Electron

The copper phthalocyanine thin films were deposited on quartz and Si/SiO2 substrates at different substrate temperatures. The morphologies, structures and optical properties of CuPc films were characterized by scanning electron microscopy, X-ray diffra ction and UV-Visible spectroscopy. The polymorph of alpha–CuPc was observed in films deposited at temperature ranging from 20°C to 145°C. The transmission and absorption spectra of CuPc films deposited at different temperatures are presented.

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