scholarly journals Utilizing of (nTiO) Nanoparticles in Thin Films Based on Polystyrene Blending with (DCM) Laser Dye

2020 ◽  
Vol 18 (4) ◽  
Keyword(s):  
Thin Films ◽  
Laser Dye

scholarly journals Coumarin 4 Laser dye/PVP Polymer/Al2O3 Nanoparticle Thin Films Induced by Er: YAG Laser Radiation

2019 ◽  
Vol 54 (4) ◽  
Author(s):  
Mithaq M. Mehdy Al-Sultani
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Dielectric Constant ◽  
Magnetic Susceptibility ◽  
Electrical Properties ◽  
Response Time ◽  
Electrical Response ◽  
Laser Wavelength ◽  
Laser Dye ◽  
Yag Laser

In this paper, thin films were made of 10-4 mol/l of Coumarin 4 laser dye dissolved in ethanol, 0.3 g of PVP polymer and 0.04 g of Al2O3 nanoparticles. The electrical properties such as dielectric constant, phase velocity of laser photons inside the film, the film permittivity and permeability, medium impedance, electrical conductivity, skin depth, the electrical response time, magnetic susceptibility and dielectric time have been studied for the prepared thin films at two different Er:YAG laser wavelengths of 1645nm and 1617 nm based on various laser powers in one time and with changed laser exposure periods in the other time. It is observed that the highest laser power consolidates each value of dielectric constant, dielectric time, electrical conductivity, the electrical response time, magnetic susceptibility and the permeability of film because of increasing the abundant energy in films within laser irradiation. The most important conclusion is that the electrical properties were much higher for the prepared thin films irradiated with 1645nm Er: YAG laser wavelength than for those irradiated with 1617nm laser wavelength.

Characterization of Supported Solid Thin Films of Laponite Clay. Intercalation of Rhodamine 6G Laser Dye

Langmuir ◽  
2004 ◽  
Vol 20 (14) ◽  
pp. 5709-5717 ◽  
Author(s):  
V. Martínez Martínez ◽  
F. López Arbeloa ◽  
J. Bañuelos Prieto ◽  
T. Arbeloa López ◽  
I. López Arbeloa
Keyword(s):  
Thin Films ◽  
Rhodamine 6G ◽  
Laser Dye ◽  
Solid Thin Films ◽  
Clay Intercalation

scholarly journals Effect of Ag nanoparticles on R6G laser dye hosted by PMMA polymerized by plasma jet

2019 ◽  
Vol 14 (29) ◽  
pp. 27-36
Author(s):  
Hammad R. Humud
Keyword(s):  
Thin Films ◽  
Silver Nanoparticles ◽  
Laser Dye ◽  
X Ray Diffraction ◽  
Sem Images ◽  
Visible Absorption ◽  
Interferometric Method ◽  
Glass Substrates ◽  
Afm Analysis

This work aim to prepare Ag/R6G/PMMA nanocomposite thinfilms by In-situ plasma polymerization and study the changes in theoptical properties of fluorophore due to the presence of Agnanoparticles structures in the vicinity of the R6G laser dye. Theconcentrations of R6G dye/MMA used are: 10-4M solutions wereprepared by dissolving the required quantity of the R6G dye inMMAMonomer. Then Silver nanoparticles with 50 average particlessize were mixed with MMAmonomer with concentration of 0.3, 0.5,0.7wt% to get R6G silver/MMA in liquid phase. The films weredeposited on glass substrates by dielectric barrier discharge plasmajet. The Ag/R6G/PMMA nanocomposite thin films werecharacterization by UV-Visible absorption spectra by using a doublebeam UV-Vis-NIR Spectrophotometer and fluorescenceSpectrophotometer. The thin films surface morphological analysis iscarried out by employing an AFM and SEM. the structure analysisare achieved by X-ray diffraction. The thickness of the films wasmeasured by optical interferometric method. AFM analysis showsthat the surface roughness of plasma polymerized pure PMMA thinfilms was 2.7 nm and for (10-4 R6G + 0.7wt% Ag)Ag/R6G/PMMAthin films was 4.16 nm. The SEM images were indicates that Agnanoparticles (NPs) disperse in the PMMA matrix with uniformdistribution and formed mostly spherical NPs and slightlyagglomerate. Also the silver nanoparticles with 0.7wt%concentration enhances the absorption process by 2.3 times and thefluorescence by 1.7 times. it can be conclude, that the addition of lowconcentrations of silver nanoparticles to the PMMA/ R6G matrix waschanging the optical properties of the prepared nanocomposite thinfilms.

scholarly journals Optical Study on Deposed Polystyrene Doped DCM Laser Dye Thin Films at Different Temperature

2016 ◽  
Vol 68 ◽  
pp. 39-47
Author(s):  
Akeel Shaker Tuhaiwer
Keyword(s):  
Thin Films ◽  
Transition Energy ◽  
Energy Gap ◽  
Electronic Transitions ◽  
Effect Of Temperature ◽  
Optical Study ◽  
Laser Dye ◽  
Casting Method ◽  
Annealing Temperatures ◽  
Electronic Transition Energy

Polystyrene (PS) polymer doped with DCM laser dye thin films have prepared on glass substrate using casting method. The obtained PS doped with DCM thin films were treated at different annealing temperatures such (30, 40, 50, 60, 70) °C. It was observed from result that the allowed direct electronic transitions energy gap was increased from 2.21 up to 2.3e.V as the temperature increasing from 30-70°C. And the allowed indirect electronic transition energy gap rose from 0.06 to 0.15e.V as the temperature increasing. The allowed indirect phonon energy also was decreased at the same range of temperature. The different effect of temperature variation was observed on the optical properties of PS doped with DCM thin films.

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

Macromolecular structures of biological specimens are not obscured by controlled osmium impregnation

1983 ◽  
Vol 41 ◽  
pp. 606-607
Author(s):  
Klaus-Ruediger Peters ◽  
Samuel A. Green
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Critical Point ◽  
Metal Films ◽  
High Magnification ◽  
Osmium Impregnation ◽  
Instrumental Resolution ◽  
20 Nm ◽  
Continuous Metal

High magnification imaging of macromolecules on metal coated biological specimens is limited only by wet preparation procedures since recently obtained instrumental resolution allows visualization of topographic structures as smal l as 1-2 nm. Details of such dimensions may be visualized if continuous metal films with a thickness of 2 nm or less are applied. Such thin films give sufficient contrast in TEM as well as in SEM (SE-I image mode). The requisite increase in electrical conductivity for SEM of biological specimens is achieved through the use of ligand mediated wet osmiuum impregnation of the specimen before critical point (CP) drying. A commonly used ligand is thiocarbohvdrazide (TCH), first introduced to TEM for en block staining of lipids and glvcomacromolecules with osmium black. Now TCH is also used for SEM. However, after ligand mediated osinification nonspecific osmium black precipitates were often found obscuring surface details with large diffuse aggregates or with dense particular deposits, 2-20 nm in size. Thus, only low magnification work was considered possible after TCH appl ication.

The Precipitation of Si in AlCuSi Thin Films

1973 ◽  
Vol 31 ◽  
pp. 34-35 ◽  
Author(s):  
R. M. Anderson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Heat Treatment ◽  
Solid Solution ◽  
Integrated Circuit ◽  
Copper Film ◽  
Solution Concentration ◽  
X Ray ◽  
Silicon Thin Films ◽  
Before And After

Aluminum-copper-silicon thin films have been considered as an interconnection metallurgy for integrated circuit applications. Various schemes have been proposed to incorporate small percent-ages of silicon into films that typically contain two to five percent copper. We undertook a study of the total effect of silicon on the aluminum copper film as revealed by transmission electron microscopy, scanning electron microscopy, x-ray diffraction and ion microprobe techniques as a function of the various deposition methods.X-ray investigations noted a change in solid solution concentration as a function of Si content before and after heat-treatment. The amount of solid solution in the Al increased with heat-treatment for films with ≥2% silicon and decreased for films <2% silicon.

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