scholarly journals GaAs(100) Surface Passivation with Sulfide and Fluoride Ions

MRS Advances ◽  
2017 ◽  
Vol 2 (51) ◽  
pp. 2915-2920
Author(s):  
Pawan Tyagi
Keyword(s):  
Surface Passivation ◽  
Single Step ◽  
Gaas Surface ◽  
Surface Recombination Velocity ◽  
Double Step ◽  
Fluoride Ions ◽  
Rutherford Back Scattering ◽  
Near Surface ◽  
Photoluminescence Study ◽  
Sulfide Ions

ABSTRACTInteraction of GaAs with sulfur can be immensely beneficial in reducing the deleterious effect of surface states on recombination attributes. Bonding of sulfur on GaAs is also important for developing novel molecular devices and sensors, where a molecular channel can be connected to GaAs surface via thiol functional group. However, the primary challenge lies in increasing the stability and effectiveness of the sulfur passivated GaAs. We have investigated the effect of single and double step surface passivation of n-GaAs(100) by using the sulfide and fluoride ions. Our single-step passivation involved the use of sulfide and fluoride ions individually. However, the two kinds of double-step passivations were performed by treating the n-GaAs surface. In the first approach GaAs surface was firstly treated with sulfide ions and secondly with fluoride ions, respectively. In the second double step approach GaAs surface was first treated with fluoride ions followed by sulfide ions, respectively. Sulfidation was conducted using the nonaqueous solution of sodium sulfide salt. Whereas the passivation steps with fluoride ion was performed with the aqueous solution of ammonium fluoride. Both sulfidation and fluoridation steps were performed either by dipping the GaAs sample in the desired ionic solution or electrochemically. Photoluminescence was conducted to characterize the relative changes in surface recombination velocity due to the single and double step surface passivation. Photoluminescence study showed that the double-step chemical treatment where GaAs was first treated with fluoride ions followed by the sulfide ions yielded the highest improvement. The time vs. photoluminescence study showed that this double-step passivation exhibited lower degradation rate as compared to widely discussed sulfide ion passivated GaAs surface. We also conducted surface elemental analysis using Rutherford Back Scattering to decipher the near surface chemical changes due to the four passivation methodologies we adopted. The double-step passivations affected the shallower region near GaAs surface as compared to the single step passivations.

scholarly journals Sulfide and Fluoride Ions Based Passivation of GaAs(100) Surface and Concept of Combining Surface Passivation with Tunnel Junction Based Molecular Devices

2019 ◽  
Author(s):  
Pawan Tyagi
Keyword(s):  
Surface Passivation ◽  
Surface States ◽  
Single Step ◽  
Gaas Surface ◽  
Double Step ◽  
Fluoride Ions ◽  
Rutherford Back Scattering ◽  
Near Surface ◽  
Photoluminescence Study ◽  
Sulfide Ions

Sulfur interaction with GaAs can reduce the harmful effect of surface states on recombination attributes. Apart from surface passivation, study of sulfur bonding on GaAs is also important for developing novel molecular electronics and molecular spintronics devices, where a molecular channel can be connected to at least one GaAs surface via thiol functional group. Excess thiol functional groups that are not involved in making molecular device channels can serve as the passivants to quench surface states. However, the primary challenge lies in increasing the stability and effectiveness of the sulfur passivated GaAs. We have investigated the effect of single and double step surface passivation of n-GaAs(100) by using the sulfide and fluoride ions. Our single-step passivation involved the use of sulfide and fluoride ions individually. However, the two kinds of double-step passivations were performed by treating the n-GaAs surface. In the first approach GaAs surface was firstly treated with sulfide ions and secondly with fluoride ions, respectively. In the second double step approach GaAs surface was first treated with fluoride ions followed by sulfide ions, respectively. Sulfidation was conducted using the nonaqueous solution of sodium sulfide salt. Whereas the passivation steps with fluoride ion was performed with the aqueous solution of ammonium fluoride. Both sulfidation and fluoridation steps were performed either by dipping the GaAs sample in the desired ionic solution or electrochemically. Photoluminescence was conducted to characterize the relative changes in surface recombination velocity due to the single and double step surface passivation. Photoluminescence study showed that the double-step chemical treatment where GaAs was first treated with fluoride ions followed by the sulfide ions yielded the highest improvement. The time vs. photoluminescence study showed that this double-step passivation exhibited lower degradation rate as compared to widely discussed sulfide ion passivated GaAs surface. We also conducted surface elemental analysis using Rutherford Back Scattering to decipher the near surface chemical changes due to the four passivation methodologies we adopted. The double-step passivations affected the shallower region near GaAs surface as compared to the single step passivations.

Investigation of Surface Passivation in InAs/GaSb Strained-Layer-Superlattices Using Picosecond Excitation Correlation Measurement and Variable-Area Diode Array Surface Recombination Velocity Measurement

2005 ◽  
Vol 891 ◽  
Author(s):  
Zhimei Zhu ◽  
Elena Plis ◽  
Abdenour Amtout ◽  
Pallab Bhattacharya ◽  
Sanjay Krishna
Keyword(s):  
Infrared Detectors ◽  
Surface Passivation ◽  
Surface Recombination ◽  
Surface States ◽  
Depletion Region ◽  
Surface Recombination Velocity ◽  
Diode Array ◽  
Ammonium Sulfide ◽  
Picosecond Excitation ◽  
Recombination Velocity

ABSTRACTThe effect of ammonium sulfide passivation on InAs/GaSb superlattice infrared detectors was investigated using two complementary techniques, namely, picosecond excitation correlation (PEC) measurement and variable-area diode array (VADA) surface recombination velocity (SRV) measurement. PEC measurements were conducted on etched InAs/GaSb superlattice mesas, which were passivated in aqueous ammonium sulfide solutions of various strengths for several durations. The PEC signal's decay time constant (DTC) is proportional to carrier lifetimes. At 77 K the PEC signal's DTC of the as-grown InAs/GaSb superlattice sample was 2.0 ns, while that of the unpassivated etched sample was reduced to 1.2 ns by the surface states at the mesa sidewalls. The most effective ammonium sulfide passivation process increased the PEC signal's DTC to 10.4 ns. However it is difficult to isolate surface recombination from other processes that contribute to the lifetime using the PEC data, therefore a VADA SRV measurement was undertaken to determine the effect of passivation on surface recombination. The obtained SRV in the depletion region of the InAs/GaSb superlattice and GaSb junction was 1.1×106 cm/s for the unpassivated sample and 4.6×105 cm/s for the passivated sample. At 77 K the highest R0A value measured in our passivated devices was 2540 W cm2 versus 0.22 W cm2 for the unpassivated diodes. The results of the lifetime, the SRV and the R0A measurements indicate that ammonium sulfide passivation will improve the performance of InAs/GaSb superlattice infrared detectors.

Experimental Investigation of Subsonic Turbulent Flow Over Single and Double Backward Facing Steps

1962 ◽  
Vol 84 (3) ◽  
pp. 317-325 ◽  
Author(s):  
D. E. Abbott ◽  
S. J. Kline
Keyword(s):  
Experimental Investigation ◽  
Velocity Profile ◽  
Flow Pattern ◽  
Reynolds Numbers ◽  
Area Ratio ◽  
Single Step ◽  
Reattachment Length ◽  
Double Step ◽  
Wide Range ◽  
Geometric Variables

Results are presented for flow patterns over backward facing steps covering a wide range of geometric variables. Velocity profile measurements are given for both single and double steps. The stall region is shown to consist of a complex pattern involving three distinct regions. The double step contains an assymmetry for large expansions, but approaches the single-step configuration with symmetric stall regions for small values of area ratio. No effect on flow pattern or reattachment length is found for a wide range of Reynolds numbers and turbulence intensities, provided the flow is fully turbulent before the step.

scholarly journals Surface passivation and optical characterization of Al2O3/a-SiCx stacks on c-Si substrates

2013 ◽  
Vol 4 ◽  
pp. 726-731 ◽  
Author(s):  
Gema López ◽  
Pablo R Ortega ◽  
Cristóbal Voz ◽  
Isidro Martín ◽  
Mónica Colina ◽  
...  
Keyword(s):  
Wavelength Range ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Surface Recombination ◽  
Chemical Vapor ◽  
Optical Characterization ◽  
Surface Recombination Velocity ◽  
Carrier Injection ◽  
Si Substrates

The aim of this work is to study the surface passivation of aluminum oxide/amorphous silicon carbide (Al2O3/a-SiCx) stacks on both p-type and n-type crystalline silicon (c-Si) substrates as well as the optical characterization of these stacks. Al2O3 films of different thicknesses were deposited by thermal atomic layer deposition (ALD) at 200 °C and were complemented with a layer of a-SiCx deposited by plasma-enhanced chemical vapor deposition (PECVD) to form anti-reflection coating (ARC) stacks with a total thickness of 75 nm. A comparative study has been carried out on polished and randomly textured wafers. We have experimentally determined the optimum thickness of the stack for photovoltaic applications by minimizing the reflection losses over a wide wavelength range (300–1200 nm) without compromising the outstanding passivation properties of the Al2O3 films. The upper limit of the surface recombination velocity (S eff,max) was evaluated at a carrier injection level corresponding to 1-sun illumination, which led to values below 10 cm/s. Reflectance values below 2% were measured on textured samples over the wavelength range of 450–1000 nm.

Homogenization Treatment to Optimize the Microstructures of the Al-3.5Cu-1.5Li Alloy and Analysis of Al3Zr Precipitates

2018 ◽  
Vol 921 ◽  
pp. 195-201 ◽  
Author(s):  
Jin Jun Xu ◽  
Mang Jiang
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Energy Dispersive Spectrometry ◽  
Single Step ◽  
Experimental Alloy ◽  
Composition Distribution ◽  
Double Step ◽  
Homogenization Treatment ◽  
Transmission Electron ◽  
Scanning Electron

The microstructure evolution and composition distribution of the cast Al-3.5Cu-1.5Li-0.11Zr alloy during single-step and double-step homogenization were studied with the help of the optical microscopy (OM), scanning electron microscopy (SEM), energy dispersive spectrometry (EDS) and transmission electron microscopy (TEM) methods. The results show that severe dendrite segregation exists in the experimental alloy. Six different homogenization treatments, conventional one-stage homogenization and double-stage homogenization are carried out, and the best homogenization treatment of the experimental alloys was achieved. Moreover, the precipitation of Al3Zr particles was significantly different after two kinds of homogenization in the experimental alloy. Compared with the single-stage homogenization, a finer particle size and distribution more diffuse of Al3Zr particles can be obtained in the double-stage homogenization treatment.

GaAs Surface Passivation for Device Applications.

1981 ◽  
Author(s):  
R. W. Grant ◽  
K. R. Elliott ◽  
S. P. Kowalczyk ◽  
D. L. Miller ◽  
J. R. Waldrop
Keyword(s):  
Surface Passivation ◽  
Gaas Surface ◽  
Device Applications

Effect of Double-Step Solution Treatment on Rejuvenation Heat Treated Microstructure of IN-738 Superalloy

2020 ◽  
Vol 856 ◽  
pp. 36-42
Author(s):  
Chuleeporn Paa-Rai
Keyword(s):  
Heat Treatment ◽  
Image Analysis ◽  
Electron Microscope ◽  
Solution Treatment ◽  
Single Step ◽  
Double Step ◽  
Heat Treated ◽  
Cast Superalloy ◽  
Scanning Electron

This work investigates the effect of rejuvenation heat treatment, with double-step solution treatment at the temperature from 1150 °C to 1200 °C, on the recovered microstructure of IN-738 cast superalloy. The superalloy has been long-term exposed as a turbine blade in a gas turbine prior to this study. After double solution treatment and aging at 845 °C for 12 h and 24 h, the recovered microstructures were examined by using a scanning electron microscope. Coarse γ΄ particles, that have presented in damaged microstructures, could not be observed in the samples after the rejuvenation heat treatment. In addition, the image analysis illustrates that the reprecipitated γ΄ particles in the samples with double-step solution treatments increase significantly in sizes during aging than that in the samples with the single-step solution treatment. Furthermore, the measurement of the samples hardness presents that the as-receive sample hardness is improved after rejuvenation heat treatment studied in this work.

Properties of Surface States on GaN and Related Compounds and Their Passivation by Dielectric Films

2002 ◽  
Vol 743 ◽  
Author(s):  
Hideki Hasegawa ◽  
Tamotsu Hashizume
Keyword(s):  
Plasma Treatment ◽  
Surface State ◽  
Surface Passivation ◽  
Hydrogen Plasma ◽  
Surface States ◽  
Ex Situ ◽  
Near Surface ◽  
Ecr Plasma ◽  
Good Surface ◽  
Donor States

ABSTRACTThis paper reviews the authors′ recent efforts to clarify the properties of electronic states near surfaces of GaN and AlGaN by using variousin-situandex-situcharacterization techniques, including UHV contact-less C-V, photoluminescence surface state spectroscopy (PLS3), cathode luminescence in-depth spectroscopy (CLIS),and gateless FET techniques that have been developed by the authors’ group.As a result, a model including a U-shaped surface state continuum, having a particular charge neutrality level, combined with frequent appearance of near-surface N-vacancy related deep donor states having a discrete level at Ec - 0.37eV is proposed as a unified model that can explain large gate leakage currents and current collapse in AlGaN/GaN HFETs. Hydrogen plasma treatment and SiO2deposition increase N-vacancy related deep donors. Reasonably good surface passivation can be achieved by ECR-plasma SiNx films and by ECR-plasma oxidized Al2O3films both combined with ECR N2plasma treatment.

Surface Recombination Investigation in Thin 4H-SiC Layers

1970 ◽  
Vol 17 (2) ◽  
pp. 119-124 ◽  
Author(s):  
Karolis GULBINAS ◽  
Vytautas GRIVICKAS ◽  
Haniyeh P. MAHABADI ◽  
Muhammad USMAN ◽  
Anders HALLÉN
Keyword(s):  
Surface Passivation ◽  
Surface Recombination ◽  
Atomic Layer ◽  
Surface Recombination Velocity ◽  
Lifetime Distributions ◽  
Carrier Lifetimes ◽  
Layer Deposition ◽  
Type Layer ◽  
Recombination Velocity ◽  
P Type

n- and p-type 4H-SiC epilayers were grown on heavily doped SiC substrates. The thickness of the p-type layer was 7 µm and the doping level around 1017 cm 3, while the n-type epilayers were 15 µm thick and had a doping concentration of 3 - 5*1015 cm 3. Several different surface treatments were then applied on the epilayers for surface passivation: SiO2 growth, Al2O3 deposited by atomic layer deposition, and Ar-ion implantation. Using collinear pump - probe technique the effective carrier lifetimes were measured from various places and statistical lifetime distributions were obtained. For surface recombination evaluation, two models are presented. One states that surface recombination velocity (SRV) is equal on both the passivation/epi layer interface (S2) and the deeper interface between the epilayer and the SiC substrate i. e. (S1 = S2). The other model is simulated assuming that SRV in the epilayer/substrate (S1) interface is constant while in the passivation layer/epilayer (S2) interface SRV can be varied S2 < S1. Empirical nomograms are presented with various parameters sets to evaluate S2 values. We found that on the investigated 4H-SiC surfaces S2 ranges from 3x104 to 5x104 assuming that the bulk lifetime is 4 (µs. In Ar+ implanted surfaces S2 is between (105 - 106) cm/s.http://dx.doi.org/10.5755/j01.ms.17.2.479

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