A Study of Point Defects and Cause of Nonstoichiometry in InSb Nanowires

2011 ◽  
Vol 1302 ◽  
Author(s):  
U. Philipose ◽  
Gopal Sapkota ◽  
Pradeep Gali ◽  
Prathyusha Nukala
Keyword(s):  
Point Defects ◽  
Growth Temperature ◽  
Defect Formation ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Metal Catalyst ◽  
Vapor Pressures ◽  
Experimental Findings ◽  
Good Agreement ◽  
Insb Nanowires

ABSTRACTSynthesis of InSb nanowires using chemical vapor deposition (CVD) is technically challenging due to the tuning of III-V vapor pressures. Growth parameters such as the choice of the metal catalyst, growth temperature and vapor pressure of constituents affect the morphology and stoichiometry of InSb nanowires. By controlling the growth temperature, it was possible to grow either stoichiometric InSb nanowires or In nanowires that contained no Sb within detectable limits. We present a simple model to show that the occurrence of native point defects in InSb is influenced by the growth kinetics and by the thermodynamics of defect formation. Results from this model are in good agreement with our experimental findings of the evidence of point defects in these nanowires.

Electrical And Structural Properties Of LT-GaAs: Influence Of As/Ga Flux Ratio And Growth Temperature

1996 ◽  
Vol 442 ◽  
Author(s):  
M. Luysberg ◽  
H. Sohn ◽  
A. Prasad ◽  
P. Specht ◽  
H. Fujioka ◽  
...  
Keyword(s):  
Structural Properties ◽  
Point Defects ◽  
Growth Temperature ◽  
Conduction Mechanism ◽  
Growth Parameters ◽  
Flux Ratio ◽  
Growth Conditions ◽  
High Resistivity ◽  
Antisite Defects ◽  
Band Conduction

AbstracThe deposition of GaAs by MBE at low temperatures results in a material of unique properties. However, up to now the control and understanding of the electrical and structural properties are unsatisfactory. To investigate the influence of growth parameters on the formation of point defects and electrical properties, the substrate temperature and the As/Ga flux ratio were systematically varied. In a well defined parameter range the lattice expansion was found to be dominated by the formation of As antisite defects. After annealing a high resistivity is obtained independent of the growth conditions. A strong influence of the growth temperature on the band conduction mechanism is observed, whereas a variation of the As/Ga flux ratio induces only slight changes of the temperature dependence of the conductivity.

MOCVD Growth Of GaxIn1−xAs1−ySby and GaxIn1−xSb ALLOYS: Effect of Growth Parameters on Their Solid Compositions

1995 ◽  
Vol 415 ◽  
Author(s):  
Baolin Zhang ◽  
Tianming Zhou ◽  
Hong Jiang ◽  
Yongqiang Ning ◽  
Shuwei Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Growth Kinetic ◽  
Metalorganic Chemical Vapor Deposition ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Mocvd Growth ◽  
Growth Temperature Dependence ◽  
Metalorganic Chemical

ABSTRACTQuaternary GaxIn1−xAs1−ySby and ternary GaxIn1−xSb alloys have been grown by metalorganic chemical vapor deposition (MOCVD). The effects of growth parameters on the solid compositions, x, y for GaxIn1−xAs1−ySby and x for GaxIn1−x Sb alloys are described in detail. Concentrations of the reactants have major effects on the corresponding solid compositions in the two kinds of alloys. The growth temperature dependence of the solid compositions in both GaxIn1−xAs1−ySby and GaxIn1−xSb was obviously observed and the growth kinetic factor was considered to account for this dependence. It was found that III/V ratio in vapor has a great effect on x in GaxIn1−xSb alloy but little effect on x and y in GaxIn1−xAs1−ySby alloy.

scholarly journals Special Issue: Advances in Chemical Vapor Deposition

Materials ◽  
2020 ◽  
Vol 13 (18) ◽  
pp. 4167
Author(s):  
Dimitra Vernardou
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Growth Parameters ◽  
Daily Life ◽  
Chemical Vapor ◽  
Polymer Coatings ◽  
Water Filtration ◽  
Special Issue ◽  
Experimental Findings ◽  
Scalable Production

Pursuing a scalable production methodology for materials and advancing it from the laboratory to industry is beneficial to novel daily-life applications. From this perspective, chemical vapor deposition (CVD) offers a compromise between efficiency, controllability, tunability and excellent run-to-run repeatability in the coverage of monolayer on substrates. Hence, CVD meets all the requirements for industrialization in basically everything including polymer coatings, metals, water-filtration systems, solar cells and so on. The Special Issue “Advances in Chemical Vapor Deposition” has been dedicated to giving an overview of the latest experimental findings and identifying the growth parameters and characteristics of perovskites, TiO2, Al2O3, VO2 and V2O5 with desired qualities for potentially useful devices.

Interdiffused SbN-based Quantum Well on GaAs for 1300-1550 nm Diode Lasers

2005 ◽  
Vol 891 ◽  
Author(s):  
Ronald A. Arif ◽  
Nelson Tansu
Keyword(s):  
Quantum Well ◽  
Diode Lasers ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Growth Technique ◽  
Gaas Matrix ◽  
Metal Organic ◽  
Experimental Findings ◽  
Organic Chemical Vapor Deposition ◽  
Good Agreement

ABSTRACTA new method to realize InGaAsSbN quantum well (QW) structures on GaAs substrate is presented. This approach combines the established growth technique of InGaAsN and InGaAsSb QWs by metal organic chemical vapor deposition (MOCVD), with a post-growth thermal interdiffusion to achieve high quality interdiffused InGaAsSbN QW for diode lasers emitting at 1300-1550-nm. In addition to presenting the optimized interdiffused SbN-based QW design at 1550-nm, strain-compensated interdiffused InGaAsSb-GaAsN QW structure is also presented. Preliminary experimental findings of N- and Sb-diffusivities in GaAs matrix show good agreement with theory, indicating the feasibility of realizing interdiffused InGaAsSbN QW.

Catalyst-free synthesis and cathodoluminescent properties of ZnO nanobranches on Si nanowire backbones

2008 ◽  
Vol 23 (12) ◽  
pp. 3403-3408 ◽  
Author(s):  
Kwang-Soo Son ◽  
Dong Hyun Lee ◽  
Jae-Woong Choung ◽  
Yong Bum Pyun ◽  
Won Il Park ◽  
...  
Keyword(s):  
Growth Temperature ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Nanowire Arrays ◽  
Zno Nanowire ◽  
Si Nanowires ◽  
Si Nanowire ◽  
Catalyst Free ◽  
Transmission Electron ◽  
Nanowire Networks

We report the catalyst-free synthesis of ZnO nanobranches on Si nanowires using metalorganic chemical vapor deposition. The formation of single-crystalline ZnO nanobranches on Si nanowire backbones has been confirmed by lattice resolved transmission electron microscopy. Depending on the growth parameters, especially the growth temperature, the morphology and size of the ZnO nanobranches evolved from nanothorn-shaped (at 350 °C) to nanoneedle-shaped structures (at 500 °C). When the growth temperature was further increased to 800 °C, thin ZnO nanowire branches grew out of the Si nanowire backbones coated with thin ZnO shells, whereas no ZnO branch was formed on bare Si nanowires due to limited nucleation. The growth behavior was further exploited to fabricate ZnO/Si nanowire networks by growing the ZnO nanowires selectively on laterally aligned Si–ZnO core-shell nanowire arrays. In addition, cathodoluminescent properties of ZnO nanobranches on Si nanowire backbones are discussed with respect to position and size.

Fabrication of Patterned Carbon Nanotube Field Emission Surfaces on SiC Substrates

2013 ◽  
Vol 1505 ◽  
Author(s):  
Michael Pochet ◽  
Jonathon Campbell ◽  
Ronald Coutu ◽  
Steven Fairchild ◽  
John Boeckl
Keyword(s):  
Thermal Decomposition ◽  
Carbon Nanotube ◽  
Field Emission ◽  
Chemical Vapor ◽  
Metal Catalyst ◽  
Chemical Vapor Deposition Growth ◽  
Field Emission Properties ◽  
Growth Method ◽  
Experimental Findings ◽  
Surface Decomposition

ABSTRACTThis work focuses on the patterning of SiC substrates prior to carbon nanotube (CNT) formation using the surface decomposition growth method for the purpose of improving the field emission capabilities of the resultant CNT film. The thermal decomposition of silicon carbide (SiC) substrates is an established approach to create highly dense arrays of vertically aligned CNTs. The attractiveness of this growth approach is that the CNTs form without the aid of a catalyst metal, yielding potentially defect free CNTs ideal for various applications. Due to the high temperature anneals (1400-1700oC) and moderate vacuum conditions (10−2 – 10−5 Torr) necessary for the thermal decomposition process to initiate on the SiC substrate, patterning CNT outcroppings ideal for enhancing the surface’s field emission properties is more difficult when compared to metal catalyst based chemical vapor deposition growth processes on silicon substrates. The intent of the SiC patterning is to reduce field screening effects between neighboring emission sites during field emission while maintaining a high emission site density. Specifically, the SiC substrate is etched to form μm scale pillars on the SiC surface. Experimental findings show that SiC substrates patterned with μm scale pillars can be decomposed to form CNT topped field emission sites, yielding a field emission substrate that outperforms a non-patterned SiC/CNT film. A turn-on electric field of 4.0 V/μm was measured.

Au-assisted Growth of Indium Antimonide Nanowires by Chemical Vapor Deposition: Temperature and Growth Duration Effects

2011 ◽  
Vol 1350 ◽  
Author(s):  
Jiebin Zhong ◽  
Jian Lin ◽  
Miroslav Penchev ◽  
Mihrimah Ozkan ◽  
Cengiz S. Ozkan
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Temperature ◽  
Indium Antimonide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Direction ◽  
Growth Duration ◽  
Transmission Electron ◽  
Temperature And Growth ◽  
Insb Nanowires

ABSTRACTIn this paper, we investigate the morphology variation of Au-assisted epitaxial InSb nanowires (NWs) dependence on growth temperature and growth duration by chemical vapor deposition (CVD). The NW length and tapering factor correlated to the NW morphology are determined as a function of growth temperature (300°C-480°C). Higher density and longer NWs were observed on the substrate as proportional to the growth duration. The growth direction of the NWs is <110> by Transmission Electron Microscopy (TEM) studies. The aim of this study is to gain better understanding of the III-V NWs growth mechanism and achieve control over the growth of InSb NWs.

Lifetime Regime in the Electrically-Detected Transient Grating Method Applied to Amorphous and Microcrystalline Silicon Films

2002 ◽  
Vol 715 ◽  
Author(s):  
P. Sanguino ◽  
M. Niehus ◽  
S. Koynov ◽  
P. Brogueira ◽  
R. Schwarz ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Analytical Calculation ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Dielectric Relaxation Time ◽  
Transient Grating ◽  
Minority Carrier Diffusion Length ◽  
Carrier Recombination ◽  
Thin Silicon ◽  
Good Agreement

AbstractThe minority-carrier diffusion length in thin silicon films can be extracted from the electrically-detected transient grating method, EDTG, by a simple ambipolar analysis only in the case of lifetime dominated carrier transport. If the dielectric relaxation time, τdiel, is larger than the photocarrier response time, τR, then unexpected negative transient signals can appear in the EDTG result. Thin silicon films deposited by hot-wire chemical vapor deposition (HWCVD) near the amorphous-to-microcrystalline transition, where τR varies over a large range, appeared to be ideal candidates to study the interplay between carrier recombination and dielectric response. By modifying the ambipolar description to allow for a time-dependent carrier grating build-up and decay we can obtain a good agreement between analytical calculation and experimental results.

Effect of Laser Thermal Processing on Defect Evolution in Silicon

2002 ◽  
Vol 717 ◽  
Author(s):  
Erik Kuryliw ◽  
Kevin S. Jones ◽  
David Sing ◽  
Michael J. Rendon ◽  
Somit Talwar
Keyword(s):  
Point Defects ◽  
Thermal Processing ◽  
Defect Formation ◽  
Secondary Ion Mass Spectrometry ◽  
Laser Energy ◽  
Process Window ◽  
Loop Formation ◽  
Transmission Electron ◽  
Ultra Shallow Junctions ◽  
Laser Thermal Processing

AbstractLaser Thermal Processing (LTP) involves laser melting of an implantation induced preamorphized layer to form highly doped ultra shallow junctions in silicon. In theory, a large number of interstitials remain in the end of range (EOR) just below the laser-formed junction. There is also the possibility of quenching in point defects during the liquid phase epitaxial regrowth of the melt region. Since post processing anneals are inevitable, it is necessary to understand both the behavior of these interstitials and the nature of point defects in the recrystallized-melt region since they can directly affect deactivation and enhanced diffusion. In this study, an amorphizing 15 keV 1 x 1015/cm2 Si+ implant was done followed by a 1 keV 1 x 1014/cm2 B+ implant. The surface was then laser melted at energy densities between 0.74 and 0.9 J/cm2 using a 308 nm excimer-laser. It was found that laser energy densities above 0.81 J/cm2 melted past the amorphous-crystalline interface. Post-LTP furnace anneals were performed at 750°C for 2 and 4 hours. Transmission electron microscopy was used to analyze the defect formation after LTP and following furnace anneals. Secondary ion mass spectrometry measured the initial and final boron profiles. It was observed that increasing the laser energy density led to increased dislocation loop formation and increased diffusion after the furnace anneal. A maximum loop density and diffusion was observed at the end of the process window, suggesting a correlation between the crystallization defects and the interstitial evolution.

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