Optofluidic Waveguiding for Biomedical Sensing

2014 ◽  
Vol 1720 ◽  
Author(s):  
Thomas A. Wall ◽  
Joshua Parks ◽  
Kaelyn D. Leake ◽  
Holger Schmidt ◽  
Aaron R. Hawkins
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Ridge Waveguide ◽  
Detection Sensitivity ◽  
Silicon Substrates ◽  
Low Loss ◽  
Biomedical Sensing ◽  
Ridge Waveguides ◽  
Sacrificial Etching ◽  
Materials Used

ABSTRACTWe review an optofluidic waveguiding lab-on-a-chip used to sense bioparticles. The sensor uses a liquid filled Anti-Resonant Reflecting Optical Waveguide (ARROW) that is interfaced with standard ridge waveguides. The ridge waveguides are coupled to off-chip lasers and detectors via optical fiber. A perpendicular intersection between the ARROW and a ridge waveguide is especially useful for detecting fluorescently tagged particles. Light coupled into the ridge waveguide can fluorescently excite these particles within a very small volume. Fluorescent signal can then be guided within the ARROW and subsequently off chip to a detector.We also discuss how such devices are fabricated. Both the ARROW and ridge waveguides are made using alternating thin films of tantalum oxide and silicon dioxide on silicon substrates. These thin films are deposited by either sputtering or plasma enhanced chemical vapor deposition (PECVD). The waveguides are patterned using a combination of standard photolithographic processes, reactive ion etching, and sacrificial etching. Low-loss optical guiding is very dependent on both the waveguide structure and the materials used. The latest processes for maximizing detection sensitivity are reviewed.We also present results using the optofluidic waveguiding sensor for detecting a variety of different types of particles such as fluorescently labeled nanobeads, viruses, ribosomes, and RNA.

Measurement of The Activation Energy in Phosphorous Doped Polycrystalline Diamond Thin Films Grown on Silicon Substrates by Hot Filament Chemical Vapor Deposition

1996 ◽  
Vol 423 ◽  
Author(s):  
S. Mirzakuchaki ◽  
H. Golestanian ◽  
E. J. Charlson ◽  
T. Stacy
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Silicon Substrates ◽  
Boron Doped Diamond ◽  
Diamond Thin Films ◽  
Hot Filament

AbstractAlthough many researchers have studied boron-doped diamond thin films in the past several years, there have been few reports on the effects of doping CVD-grown diamond films with phosphorous. For this work, polycrystalline diamond thin films were grown by hot filament chemical vapor deposition (HFCVD) on p-type silicon substrates. Phosphorous was introduced into the reaction chamber as an in situ dopant during the growth. The quality and orientation of the diamond thin films were monitored by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Current-voltage (I-V) data as a function of temperature for golddiamond film-silicon-aluminum structures were measured. The activation energy of the phosphorous dopants was calculated to be approximately 0.29 eV.

Epitaxial Ferroelectric BaTiO3 Thin Films for Microphotonic Applications

2000 ◽  
Vol 637 ◽  
Author(s):  
F. Niu ◽  
A.R. Teren ◽  
B.H. Hoerman ◽  
B.W. Wessels
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Insulating Layer ◽  
Ferroelectric State ◽  
Transmission Electron ◽  
Electro Optic ◽  
Metal Organic ◽  
Mgo Layers

AbstractEpitaxial ferroelectric BaTiO3 thin films have been developed as a material for microphotonics. Efforts have been directed toward developing these materials for thin film electro-optic modulators. Films were deposited by metalorganic chemical vapor deposition (MOCVD) on both MgO and silicon substrates. The electro-optic properties of the thin films were measured. For BaTiO3 thin films grown on (100) MgO substrates, the effective electro-optic coefficient, reff depended on the magnitude and direction of the electric field. Coefficients as high as 260 pm/V have been measured. Investigation of BaTiO3 films on silicon has been undertaken. Epitaxial BaTiO3 thin films were deposited by MOCVD on (100) MgO layers grown on silicon (100) substrates by metal-organic molecular beam epitaxy (MOMBE). The MgO serves as the low index optical cladding layer as well as an insulating layer. X-ray diffraction and transmission electron microscopy (TEM) indicated that BaTiO3 was epitaxial with an orientational relation given by BaTiO3 (100)//Si (100) and BaTiO3[011]//Si [011]. Polarization measurements indicated that the BaTiO3 epitaxial films on Si were in the ferroelectric state.

Conductance in Microcrystalline BbxCx/Si Heterojunction Diodes

1992 ◽  
Vol 283 ◽  
Author(s):  
Sunwoo Lee ◽  
Thuong Ton ◽  
D. Zych ◽  
P. A. Dowben
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Electronic Material ◽  
Boron Carbide ◽  
Band Gap ◽  
Reverse Current ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Chemical Vapor Deposited ◽  
Heterojunction Diodes

ABSTRACTPlasma-enhanced chemical vapor deposited boron carbide (B1-xCx) thin films are shown to be a potential electronic material suitable for high temperature devices. The boron carbide films make excellent p-n heteroj unction diodes with /i-type silicon substrates. The B1-xCx/Si heteroj unction diodes are demonstrated to have rectifying properties at temperatures above 200°C and reverse current is strongly dependent on the energy of the band gap of the boron carbide films.

Chemical Vapor Deposition of Nickel Ferrite Using Ni C5H5 2 and Fe C5H4C4H9 C5H5

2010 ◽  
Vol 3 (1) ◽  
Author(s):  
Rachel Walker ◽  
M. Singh ◽  
Y. Yang ◽  
C.G. Takoudis
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Nickel Ferrite ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Pressure Chemical ◽  
Oxygen Gas ◽  
The Individual

Chemical vapor deposition was used to deposit thin films of nickel oxide (NiO) and iron oxide (Fe2O3) on silicon substrates. Precursors chosen for this process were nickelocene,Ni(C5H5)2 and n-butylferrocene, Fe(C5H4C4H9)(C5H5), which were oxidized with oxygen gas in a low-pressure chemical vapor deposition system. Following the deposition of the individual metal oxides, the two precursors were used together with the goal of depositing a thin film of nickel ferrite (NiFe2O4). Both co-deposition and cyclic deposition were carried out, and the resulting thin films were analyzed using x-ray photoelectron spectroscopy. This study found that the resulting thin films did not contain NiFe2O4, but were composed of NiO and Fe2O3 in a different ratio. It is suggested that changing various parameters in this experiment can be used to vary this ratio.

scholarly journals Postannealing Effect at Various Gas Ambients on Ohmic Contacts of Pt/ZnO Nanobilayers toward Ultraviolet Photodetectors

2013 ◽  
Vol 2013 ◽  
pp. 1-9 ◽  
Author(s):  
Chung-Hua Chao ◽  
Mao-Yi Chen ◽  
Chii-Ruey Lin ◽  
Yueh-Chung Yu ◽  
Yeong-Der Yao ◽  
...  
Keyword(s):  
Thin Films ◽  
Gas Flow ◽  
Ohmic Contacts ◽  
Chemical Vapor ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Flow Rate Ratio ◽  
Silicon Substrates ◽  
Pt Electrode ◽  
Ultraviolet Photodetectors

This paper describes a fabrication and characterization of ultraviolet (UV) photodetectors based on Ohmic contacts using Pt electrode onto the epitaxial ZnO (0002) thin film. Plasma enhanced chemical vapor deposition (PECVD) system was employed to deposit ZnO (0002) thin films onto silicon substrates, and radio-frequency (RF) magnetron sputtering was used to deposit Pt top electrode onto the ZnO thin films. The as-deposited Pt/ZnO nanobilayer samples were then annealed at450∘Cin two different ambients (argon and nitrogen) to obtain optimal Ohmic contacts. The crystal structure, surface morphology, optical properties, and wettability of ZnO thin films were analyzed by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), photoluminescence (PL), UV-Vis-NIR spectrophotometer, and contact angle meter, respectively. Moreover, the photoconductivity of the Pt/ZnO nanobilayers was also investigated for UV photodetector application. The above results showed that the optimum ZnO sample was synthesized with gas flow rate ratio of 1 : 3 diethylzinc [DEZn, Zn(C2H5)2] to carbon dioxide (CO2) and then combined with Pt electrode annealed at450∘Cin argon ambient, exhibiting good crystallinity as well as UV photo responsibility.

scholarly journals Low loss ridge waveguides in lithium niobate thin films by optical grade diamond blade dicing

2016 ◽  
Vol 24 (2) ◽  
pp. 1386 ◽  
Author(s):  
Martin F. Volk ◽  
Sergiy Suntsov ◽  
Christian E. Rüter ◽  
Detlef Kip
Keyword(s):  
Thin Films ◽  
Lithium Niobate ◽  
Low Loss ◽  
Diamond Blade ◽  
Ridge Waveguides

In-Situ Preparation and Characterization of Superconducting Thin Films and Related Materials by Mocvd for the Development of Three Terminal Switching Devices

1989 ◽  
Vol 169 ◽  
Author(s):  
R. Singh ◽  
S. Sinha ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
High Temperature Superconductor ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Superconducting Thin Films ◽  
In Situ Preparation ◽  
In Situ Deposition ◽  
Rapid Isothermal Processing

AbstractMetalorganic chemical vapor deposition (MOCVD) has the potential of emerging as a major technique for the fabrication of high temperature superconductor devices. In this paper, we present preliminary results of in-situ deposition of Y-Ba-Cu-0 thin films (Tc = 79K) by rapid isothermal processing assisted MOCVD on BaF2/silicon substrates.

Organometallic Chemical Vapor Deposition of Strontium Titanate thin Films

1989 ◽  
Vol 168 ◽  
Author(s):  
W. A. Feil ◽  
B. W. Wessels ◽  
L. M. Tonge ◽  
T. J. Marks
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Titanium Isopropoxide ◽  
Dielectric Constants ◽  
Silicon Substrates ◽  
Metal Organic ◽  
Organic Precursors ◽  
Organometallic Chemical Vapor Deposition

AbstractSrTiO3 thin films were deposited by low pressure organometallic chemical vapor deposition on silicon substrates using the volatile metal-organic precursors titanium isopropoxide and Sr(dipivaloylmethanate)2. Oxygen and water vapor were used as reactant gases and argon was used as a carrier gas. Growth rates ranging from 0.6–2.1 μm/hr were obtained at 650–800°C. Polycrystalline films were obtained at growth temperatures of 650–750°C, and amorphous films above 750°C. SrTiO3 films deposited on silicon substrates exhibited resistivities greater than 109 Ω-cm and dielectric constants up to 100.

scholarly journals Propiedades ópticas y estructurales de las películas de óxido de silicio rico en silicio obtenidas por la técnica HFCVD

2019 ◽  
pp. 9-14
Author(s):  
Nora Castillo-Tépox ◽  
José Alberto Luna-López ◽  
José Álvaro David Hernández-De la Luz ◽  
Karim Monfil-Leyva
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Optical Transmittance ◽  
Silicon Substrates ◽  
Hydrogen Flow ◽  
Optical Energy Band Gap ◽  
Order Of Magnitude ◽  
P Type ◽  
Hot Filament

In this work we present the results of the analysis obtained from the deposit and characterization of thin films of silicon rich oxide (SRO). The films were obtained by hot filament chemical vapor deposition (HFCVD) technique, such films were deposited on silicon substrates p-type. The deposit of thin films was realized considering different distances from source to substrate (DFS) which were 3, 4, 5 and 6 mm. The quantity of precursors (SiO2) was controlled by the distance from the filament to the source, which was 6 mm for this work, the filament was held at 2000°C. A constant 3-minute deposit time was maintained, and the hydrogen flow level was 10 sccm. The films thickness was obtained by using the profilometry technique, the thickness range was from 200 to 600 nm. The vibrational molecular modes of the SRO films were obtained by Fourier Transform Infrared Spectroscopy (FTIR). The films of 3 mm DFS exhibit an optical transmittance of 90%. The optical energy band gap of the thin films varies from 2.2 to 3.3 eV. When an annealing process at 1000°C was carried out for one hour, the SRO films increase their photoluminescence by an order of magnitude approximately.

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