The Effect of Titanium Oxide Substrate on the Film Morphology and Photoluminescence Properties of Organometal Halide Perovskites

2015 ◽  
Vol 1771 ◽  
pp. 181-185
Author(s):  
Zhihua Xu ◽  
Zhengtao Chen
Keyword(s):  
Grain Size ◽  
Film Structure ◽  
Film Morphology ◽  
Photoluminescence Spectra ◽  
Photoluminescence Properties ◽  
Time Resolved ◽  
Oxide Substrate ◽  
Halide Perovskites ◽  
Heterogeneous Film ◽  
20 Nm

ABSTRACTWe have investigated the film morphology and photoluminescence properties of spin-coated CH3NH3PbI3-xClx films on mesoporous and compact TiO2 substrates. We observe that the perovskite film deposited on the mesoporous substrate composed of 20 nm TiO2 nanopaticles exhibits relatively uniform grain size, while the films deposited on the compact TiO2 substrate and the mesoporous substrate with large TiO2 nanoparticles (200 nm) show highly heterogeneous film morphology. The heterogeneity of film morphology has significant effect on the photoluminescence spectra and lifetime of the perovskite films. The result of time-resolved confocal microscopy unveils the relation between film structure and photoluminescence properties.

Size-Dependence of Photoluminescence Property of ZnO Nanoparticles

2014 ◽  
Vol 887-888 ◽  
pp. 143-146 ◽  
Author(s):  
Xiao Fang Wang ◽  
Yun Liang Fang ◽  
Tian Le Li ◽  
Fu Juan Wang
Keyword(s):  
Grain Size ◽  
Lower Energy ◽  
Size Dependence ◽  
Surface States ◽  
Photoluminescence Property ◽  
Precipitation Method ◽  
Pl Spectra ◽  
Broadband Emission ◽  
Band Emission ◽  
20 Nm

Nanometer-sized ZnO crystals with the diameter from 20 nm to 110 nm were prepared by homogenous precipitation method (HPM). The photoluminescence (PL) spectra of as-prepared nanoparticles under excitation at the wavelength of 320 nm were detected. The PL spectra were fitted with Gaussian curves, in which a good fitting consisting of six Gaussian peaks was obtained. We observed that the multi-peak centers do not change much, while the relative amplitude of Gaussian combination to the band-to-band emission decreases rapidly with the increased grain size. It shows that the broadband emission at the lower energy is associated with the surface states.

A Fresh Insight into Film Morphology Measurement Techniques for Advanced Ulsi Manufacturing

1993 ◽  
Vol 309 ◽  
Author(s):  
Seshadri Ramaswami
Keyword(s):  
Grain Size ◽  
Integrated Circuit ◽  
Measurement Techniques ◽  
Film Morphology ◽  
Integrated Circuit Fabrication ◽  
Circuit Fabrication ◽  
Non Destructive ◽  
Fresh Insight ◽  
Insight Into

AbstractA laser based non-destructive technique has been used to study the morphology of sputterdeposited aluminum alloy films. The data emanating from the Therma-wave Imager that makes use of this principle, has been correlated with reflectivity, grain size and micro-roughness of the film. In addition, through the use of a case study, this paper demonstrates the utility of this application as an in-line monitor in an integrated circuit fabrication line.

Solid-phase crystallization of ultra-thin amorphous Ge layers on insulators

2021 ◽  
Author(s):  
Ryo Oishi ◽  
Koji ASAKA ◽  
Bolotov Leonid ◽  
Noriyuki Uchida ◽  
Masashi Kurosawa ◽  
...  
Keyword(s):  
Grain Size ◽  
Grain Boundary ◽  
Barrier Height ◽  
Carrier Mobility ◽  
Solid Phase ◽  
Hole Mobility ◽  
Solid Phase Crystallization ◽  
Simple Method ◽  
20 Nm ◽  
Grain Boundary Barrier

Abstract A simple method to form ultra-thin (< 20 nm) semiconductor layers with a higher mobility on a 3D-structured insulating surface is required for next-generation nanoelectronics. We have investigated the solid-phase crystallization of amorphous Ge layers with thicknesses of 10−80 nm on insulators of SiO2 and Si3N4. We found that decreasing the Ge thickness reduces the grain size and increases the grain boundary barrier height, causing the carrier mobility degradation. We examined two methods, known effective to enhance the grain size in the thicker Ge (>100 nm). As a result, a relatively high Hall hole mobility (59 cm2/Vs) has been achieved with a 20-nm-thick polycrystalline Ge layer on Si3N4, which is the highest value among the previously reported works.

ATOMIC FORCE MICROSCOPY AND XRD ANALYSIS OF SILVER FILMS DEPOSITED BY THERMAL EVAPORATION

2006 ◽  
Vol 20 (02) ◽  
pp. 217-231 ◽  
Author(s):  
MUHAMMAD MAQBOOL ◽  
TAHIRZEB KHAN
Keyword(s):  
Atomic Force Microscopy ◽  
Grain Size ◽  
Surface Characterization ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Xrd Analysis ◽  
Force Microscopy ◽  
Atomic Force ◽  
Average Grain Size ◽  
20 Nm

Thin films of pure silver were deposited on glass substrate by thermal evaporation process at room temperature. Surface characterization of the films was performed using X-ray diffraction (XRD) and atomic force microscopy (AFM). Thickness of the films varied between 20 nm and 72.8 nm. XRD analysis provided a sharp peak at 38.75° from silver. These results indicated that the films deposited on glass substrates at room temperature are crystalline. Three-dimension and top view pictures of the films were obtained by AFM to study the grain size and its dependency on various factors. Average grain size increased with the thickness of the deposited films. A minimum grain size of 8 nm was obtained for 20 nm thick films, reaching 41.9 nm when the film size reaches 60 nm. Grain size was calculated from the information provided by the XRD spectrum and averaging method. We could not find any sequential variation in the grain size with the growth rate.

Steady state and time-resolved photoluminescence properties of alternating polyfluorene copolymers

2003 ◽  
Vol 135-136 ◽  
pp. 387-388 ◽  
Author(s):  
A. Charas ◽  
J. Morgado ◽  
L. Alcácer ◽  
J.M.G. Martinho ◽  
F. Cacialli
Keyword(s):  
Steady State ◽  
Photoluminescence Properties ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Mechanical Behavior and Stress-Induced Martensitic Transformation in Nanocrystalline Ti49.4Ni50.6 Alloy

2008 ◽  
Vol 584-586 ◽  
pp. 470-474 ◽  
Author(s):  
Egor Prokofiev ◽  
Dmitriy Gunderov ◽  
Alexandr Lukyanov ◽  
Vladimir Pushin ◽  
Ruslan Valiev
Keyword(s):  
Grain Size ◽  
Tensile Strength ◽  
Martensitic Transformation ◽  
Ultimate Tensile Strength ◽  
High Pressure Torsion ◽  
Coarse Grained ◽  
High Yield ◽  
D 20 ◽  
20 Nm ◽  
High Ultimate Tensile Strength

Amorphous-nanocrystalline Ti49.4Ni50.6 alloy in the shape of a disc 20 mm in diameter has been successfully produced using high pressure torsion (HPT). Application of HPT and annealing at temperatures of 300–550°C resulted in formation of a nanocrystalline (NC) structure with the grain size (D) about 20–300 nm. The HPT samples after annealing at Т = 400°C with the D= 20 nm possess high yield stress and high ultimate tensile strength (more than 2000 MPa). There is an area of strain-induced transformation B2-B19’ on the tensile curve of the samples with the grain size D =20 nm. The stress of martensitic transformation (σm) of samples is 450 MPa, which is three times higher than σm in the initial coarse-grained state (σm ≈ 160 MPa). The HPT samples after annealing at Т = 550°C with the D= 300 nm possess high ductility (δ>60 %) and high ultimate tensile strength (about 1000 MPa).

Transport Properties of B-, P-Doped and Undoped 50 kHz PECVD Microcrystalline Silicon

1989 ◽  
Vol 164 ◽  
Author(s):  
M.A. Hachicha ◽  
Etienne Bustarret
Keyword(s):  
Grain Size ◽  
Hall Mobility ◽  
Solid Phase ◽  
Grazing Angle ◽  
Dc Conductivity ◽  
X Ray Diffraction ◽  
Crystalline Fraction ◽  
Average Grain Size ◽  
20 Nm ◽  
Solid Phase Density

AbstractUndoped 500 nm-thick silicon layers with a crystalline fraction around 95% and an average grain size of 20 nm have been deposited at 350°C by 50 kHz triode PECVD in a H2/SiH4 mixture, in the presence of a magnetic field. Their room temperature (rt) dc conductivity μrt is 0.03 Δ−1cm−1 for a Hall mobility of 0.8 cm 2V−1s−1.The study by SIMS, infrared absorption, grazing angle x-ray diffraction and Raman scattering spectroscopies of the doped samples shows how the crystalline fraction and the grain size drop as the B2H6/SiH4 and PH3/SiH4 volumic ratios increase from 10 ppm to 1%.The rt dc conductivity reaches 2 Δ−1 cm−1 (Hall mobility: 15 cm2V−ls−1) for a solid phase density of 1019 cm−3 boron atoms, and 30 Δ−1cm−1 (Hall mobility: 55 cm2V−ls−1) at the maximum P incorporation of 8 × 1020cm−3.

Optical Absorption and Photoluminescence Properties of Dy3+ Ions in Bi2O3-SiO2-B2O3 Glass System

2014 ◽  
Vol 979 ◽  
pp. 280-284
Author(s):  
Narong Sangwaranatee ◽  
Yaowaluk Tariwong ◽  
Sunisa Sarachai ◽  
Jakrapong Kaewkhao ◽  
Natthakridta Chanthima
Keyword(s):  
Optical Absorption ◽  
Emission Spectrum ◽  
Molar Volume ◽  
Borosilicate Glass ◽  
Excitation Wavelength ◽  
Optical Absorption Spectra ◽  
Photoluminescence Spectra ◽  
Photoluminescence Properties ◽  
Melt Quenching ◽  
Absorption Bands

This research studied the effect of dysprosium on the physical, optical and luminescence properties of the bismuth borosilicate glass in compositions 40Bi2O3 : 20SiO2 : (40-x)B2O3 : xDy2O3 (where x = 0.0, 0.5, 1.0, 1.5, 2.0 and 2.5 mol%). The glass systems have been prepared at 1100 °C by melt quenching technique. The results showed that the density and molar volume of glass samples are between 4.6477 ± 0.0020 to 5.0047 ± 0.0041 g/cm3 and 45.6608 to 48.6797 cm3/mol, respectively. The values of density and molar volume of these glasses were not depend on the Dy2O3 concentration. The optical absorption spectra of glass samples in the UV-Vis-NIR region shows absorption bands at 794, 906, 1094, 1276 and 1690 nm, respectively. The photoluminescence spectra show emission bands at 482 (blue), 576 (green), 663 (yellow) and 756 (red) nm under 453 nm excitation wavelength. The emission spectrum at 576 nm has shown a strongest intensity.

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