An Epitaxial Si/insulator/Si Structure Prepared by Vacuum Deposition of CaF2 and Silicon

1981 ◽  
Vol 10 ◽  
Author(s):  
T. Asano ◽  
H. Ishiwara
Keyword(s):  
Substrate Temperature ◽  
Silicon Film ◽  
Single Crystal Silicon ◽  
Rutherford Backscattering ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Optimum Conditions ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Substrate Temperatures

Heteroepitaxial CaF2/Si and Si/CaF2/Si structures were prepared by conventional vacuum evaporation of CaF2 and silicon onto silicon substrates. The optimum conditions for obtaining good epitaxial films were investigated by changing the silicon substrate orientation, the film thickness and the substrate temperature during film deposition. From Rutherford backscattering and channelling spectroscopy it was found that CaF2 films with excellent film quality were obtained on Si(111), Si(110) and Si(100) substrates at substrate temperatures of 600– 800°C, 800°C and 500–600°C respectively. It was also found from Rutherford backscattering and channelling spectroscopy and from transmission electron microscopy that single-crystal silicon films are formed on a CaF2/Si(111) structure at a substrate temperature of 700°C. From measurements of the electrical properties of the top silicon film after the implantation of phosphorus ions at 2 ×1015 cm−2 and subsequent annealing at 750°C, an electron Hall mobility of 69cm2 V−1 s−1 was obtained.

TEM characterization of Au/Polysilicon interactions

1990 ◽  
Vol 48 (4) ◽  
pp. 650-651
Author(s):  
N. David Theodore ◽  
Leslie H. Allen ◽  
C. Barry Carter ◽  
James W. Mayer
Keyword(s):  
Solid Phase ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Electrical Contacts ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Polysilicon Films ◽  
The Stability

Metal/polysilicon investigations contribute to an understanding of issues relevant to the stability of electrical contacts in semiconductor devices. These investigations also contribute to an understanding of Si lateral solid-phase epitactic growth. Metals such as Au, Al and Ag form eutectics with Si. reactions in these metal/polysilicon systems lead to the formation of large-grain silicon. Of these systems, the Al/polysilicon system has been most extensively studied. In this study, the behavior upon thermal annealing of Au/polysilicon bilayers is investigated using cross-section transmission electron microscopy (XTEM). The unique feature of this system is that silicon grain-growth occurs at particularly low temperatures ∽300°C).Gold/polysilicon bilayers were fabricated on thermally oxidized single-crystal silicon substrates. Lowpressure chemical vapor deposition (LPCVD) at 620°C was used to obtain 100 to 400 nm polysilicon films. The surface of the polysilicon was cleaned with a buffered hydrofluoric acid solution. Gold was then thermally evaporated onto the samples.

Pulsed Ion-Beam Induced Reactions of Ni And Co With Amorphous and Single Crystal Silicon

1984 ◽  
Vol 35 ◽  
Author(s):  
J. O. Olowolafe ◽  
R. Fastow
Keyword(s):  
Amorphous Silicon ◽  
Ion Beam ◽  
Single Crystal Silicon ◽  
Reaction Rates ◽  
Rutherford Backscattering ◽  
Thin Layers ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
Crystal Silicon ◽  
Transmission Electron

ABSTRACTThin layers (~1,000 A ) of Ni and Co have been reacted with both (100) and amorphous silicon (a-Si) using a pulsed ion beam. Samples were analyzed using Rutherford backscattering, x-ray diffraction, and transmission electron microscopy. Rutherford backscattering showed that the metal/a-Si and metal/(100)-Si reaction rates were comparable. Both reactions began at the composition of the lowest eutectic. For comparison. furnace annealing of the same structures showed that the reaction rate of Ni with amorphous silicon was greater than with (100) Si; Co reacted nearly identically with both substrates. Diffraction data suggest that pulsed ion beam annealing crystallizes the amorphous silicon before the metal/a-Si reaction begins.

Characteristics of Palladium Thin Films Deposited by the Ionized Cluster Beam Technique

1991 ◽  
Vol 239 ◽  
Author(s):  
Maria Huffman ◽  
T. S. Kalkur ◽  
L. Kammerdiner ◽  
R. Kwor ◽  
L. L. Levenson ◽  
...  
Keyword(s):  
Grain Size ◽  
Substrate Temperature ◽  
Substrate Surface ◽  
Silicon Substrates ◽  
Cluster Beam ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Neutral Mode ◽  
Almost All ◽  
Substrate Temperatures

ABSTRACTAn ionized cluster beam (ICB) source was used to deposit Pd onto oxidized silicon substrates. The ICB source was operated in both the neutral mode (no ionization and no acceleration) and in the ICB mode with ionization and acceleration voltages at 3 kV and 6 k.V. Also, substrate temperatures were varied between 100°C and 400°C. The Pd film thicknesses were generally between 1, 200Å and 1, 800Å, with one film thickness about 500Å. The films were examined by transmission electron microscopy (TEM), transmission electron diffraction (TED), and x-ray diffraction (XRD). Grain size measurements by TEM and XRD showed that ionization and acceleration of Pd resulted in a slight increase in grain size compared to films deposited without ionization or acceleration at any substrate temperature. However, the grain size increased significantly as the substrate temperature rose. XRD showed that all ICB deposited Pd films have significant (111) texturing as determined by comparison to XRD data for Pd powder. For Pd films deposited at 400°C, almost all grains were oriented with the (111) planes parallel to the substrate surface. The electrical conductivity of all Pd films was comparable to that of bulk Pd.

Synthesis and Selected Micro-Mechanical Properties of Titanium Nitride Thin Films by the Pyrolysis of Tetrakis Titanium in Ammonia.

1994 ◽  
Vol 363 ◽  
Author(s):  
Y. W. Bae ◽  
W. Y. Lee ◽  
T. M. Besmann ◽  
P. J. Blau ◽  
L. Riester
Keyword(s):  
Thin Films ◽  
Titanium Nitride ◽  
Electron Spectroscopy ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Chemical Vapor Deposited

AbstractThin films of titanium nitride were chemical vapor deposited on (100)-oriented single-crystal silicon substrates from tetrakis (dimethylamino) titanium, Ti((CH3)2N)4, and ammonia gas mixtures in a cold-wall reactor at 623 K and 655 Pa. The films were characterized by Auger electron spectroscopy, X-ray diffraction, and transmission electron spectroscopy. The nano-scale hardness of the film, measured by nanoindentation, was 12.7±0.6 GPa. The average kinetic friction coefficient against unlubricated, type- 440C stainless steel was determined using a computer-controlled friction microprobe to be ∼0.43.

Microwave Activation of Dopants & Solid Phase Epitaxy in Silicon

2007 ◽  
Vol 989 ◽  
Author(s):  
Douglas C. Thompson ◽  
J. Decker ◽  
T. L. Alford ◽  
J. W. Mayer ◽  
N. David Theodore
Keyword(s):  
Single Crystal ◽  
Microwave Heating ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Single Crystal Silicon ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Microwave System

AbstractMicrowave heating is used to activate solid phase epitaxial re-growth of amorphous silicon layers on single crystal silicon substrates. Layers of single crystal silicon were made amorphous through ion implantation with varying doses of boron or arsenic. Microwave processing occurred inside a 2.45 GHz, 1300 W cavity applicator microwave system for time-durations of 1-120 minutes. Sample temperatures were monitored using optical pyrometery. Rutherford backscattering spectrometry, and cross-sectional transmission electron microscopy were used to monitor crystalline quality in as-implanted and annealed samples. Sheet resistance readings show dopant activation occurring in both boron and arsenic implanted samples. In samples with large doses of arsenic, the defects resulting from vacancies and/or micro cluster precipitates are seen in transmission electron micrographs. Materials properties are used to explain microwave heating of silicon and demonstrate that the damage created in the implantation process serves to enhance microwave absorption.

Effect of Boron Doping on the C49 TO C54 Phase Transformation in Ti/Si (100) Bilayers

1996 ◽  
Vol 441 ◽  
Author(s):  
M. Libera ◽  
A. Quintero
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Interface Roughness ◽  
Ex Situ ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Boron Doped ◽  
Transmission Electron

AbstractWe have demonstrated that the formation of C54 TiSi2 on Boron-doped single crystal silicon substrates, under RTA annealing conditions in a Nitrogen ambient, leads to a thicker TiN capping surface layer, thinner silicide layer, higher C49 to C54 transformation temperature and greater interface roughness compared to C54 TiSi 2 formation on undoped single crystal silicon substrates. Titanium films 32 nm thick were deposited on undoped and boron-doped single crystal silicon substrates. The films were annealed at 3 /C/isn nitrogen to final quenching temperatures between 500 °C and 900 TC. Ex-situ four point probe sheet resistance, cross sectional transmission electron microscopy (XTEM), high resolution transmission electron microscopy (HRTEM) and x-ray diffraction (XRD) were used to analyze the resulting TiN on TiSi2 bilayer. The C49 to C54 transformation occurs circa 760 TC and 810 TC for the undoped and boron-doped cases respectively. HRTEM observations reveal a thick 20 nm TIN layer on the C54 TiSi2 film in the boron-doped case but only fine dispersed TiN particles embedded on the top of the silicide in the undoped case. It was observed that the resultant silicide in the boron-doped case was thinner and the TiSi2 /Si(100) interface is rougher. XRD and TEM analysis show that in the boron doped case, there is a preferred C54 (040) orientation compared to a random orientation for the undoped case.

High Hf Content NITIHF Shape Memory Films

1999 ◽  
Vol 604 ◽  
Author(s):  
Chen Zhang ◽  
Paul E. Thoma ◽  
Ralph Zee
Keyword(s):  
Heat Treatment ◽  
Substrate Temperature ◽  
Heat Treatment Temperature ◽  
Single Crystal Silicon ◽  
Treatment Temperature ◽  
Silicon Substrates ◽  
Scanning Calorimetry ◽  
Free Standing ◽  
Crystal Silicon ◽  
Transformation Temperatures

AbstractPolycrystalline NiTiHf films with around 9at% Hf have been successfully deposited from a single NiTiHf target using a DC magnetron sputtering system. Free standing films were obtained by depositing the films on single crystal silicon substrates. Thickness of the films was controlled between 10-12µm. In this investigation, the effects of deposition temperature on the crystallinity and transformation temperatures of the films were studied. Substrate temperature during deposition was varied between 300°C and 700°C at 100°C intervals. The influence of heat treatment temperature on the properties of the films was also investigated. The heat treatment temperature was between 300°C and 800°C at 100° C intervals. Transformation temperatures of these films were determined by differential scanning calorimetry (DSC). The crystallinity was determined using x-ray diffractometry. It was found that all the as-deposited films were crystalline even when the substrate temperature was as low as 300°C. Both martensite and austenite transformation temperatures increase with increasing substrate temperature and increasing heat treatment temperature.

Temperature Effects on Internal Stress in Molybdenum Thin Films on Single-Crystal Silicon Substrates

1982 ◽  
Vol 18 ◽  
Author(s):  
Jiann-Ruey Chen ◽  
Ching-Hung Ho
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Annealing Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Single Crystal Silicon ◽  
Internal Stresses ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Lower Annealing Temperature ◽  
Spectrometry Technique

Molybdenum thin films were deposited with an electron beam gun onto (100)- oriented silicon substrates. The samples were then annealed in vacuum, and the internal stresses in the molybdenum thin films were studied as functions both of the annealing temperature and of the substrate temperature during deposition. Silicide formation and the film thickness after annealing were monitored by the Rutherford backscattering spectrometry technique, and the stress was determined from the substrate curvature which was measured from Newton's ring interference fringes. It was found that, when the substrate temperature was kept at 400°C during deposition, MoSi2 was formed after annealing at temperatures above 500 °C. This MoSi2 exhibited large tensile stresses of about 2 × 1010 dyn cm−2 for annealing above 700 °C, whereas at the lower annealing temperature of 500 °C the stresses were compressive. No detectable silicides were observed when the substrates were kept at temperatures below 150 °C. The Mo-Si film stresses were tensile for substrates kept at room temperature during deposition and compressive for substrates kept at 150 °C.

Electron Microscope Observations of Mechanisms of thin Film Delamination from Substrates

1988 ◽  
Vol 119 ◽  
Author(s):  
D. Goyal ◽  
A. H. King
Keyword(s):  
Thin Film ◽  
Electron Microscope ◽  
Film Formation ◽  
Single Crystal Silicon ◽  
Metal Films ◽  
Model Systems ◽  
Silicon Substrates ◽  
Formation Model ◽  
Crystal Silicon ◽  
Transmission Electron

AbstractTransmission electron microscope techniques have been applied to the problem of thin film delamination from substrates during film formation. Model systems involving metal films on single crystal silicon substrates have been used and it is found that delamination of the films is initiated by the formation of damage in the substrate. This understanding removes some of the fundamental problems regarding delamination.

Heteroepitaxial Si-ZrO2-Si by MOCVD

1993 ◽  
Vol 335 ◽  
Author(s):  
Anton C. Greenwald ◽  
Nader M. Kalkhoran ◽  
Fereydoon Namavar ◽  
Alain E. Kaloyeros ◽  
Ioannis Stathakos
Keyword(s):  
Gas Flow ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Cubic Phase ◽  
Silicon Substrates ◽  
Heteroepitaxial Growth ◽  
Crystal Silicon ◽  
Flow Rates ◽  
Substrate Temperatures ◽  
Source Materials

AbstractThe objective of this research was to demonstrate heteroepitaxial growth of yttria stabilized cubic zirconia on single crystal silicon substrates by chemical vapor deposition (CVD) using metalorganic source materials. We succeeded in depositing extremely smooth, well aligned films of zirconia on silicon substrates, both the <100> and <111> orientations, without an oxide interfacial layer. Experimental variables investigated included varying zirconia source materials, substrate temperatures, oxygen concentration, gas flow rates, yttria doping, substrate orientation, and cobalt-silicide as an oxygen diffusion barrier. ZrO2 films were predominantly tetragonal when deposited in the absence of oxygen while cubic phase material could be put down at 750°C with oxygen background. Films deposited from TMHD zirconium contained no measurable carbon contamination. Deposits from trifluoro-acetylacetonate Zr contained small amounts of fluorine, even in the presence of water vapor, and some carbon when hydrogen was used as a diluent gas.

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