Characterizing the Two-Dimensional Doping Concentration inside Silicon-Nanowires Using Scanning Spreading Resistance Microscopy

2009 ◽  
Vol 1178 ◽  
Author(s):  
Thomas Hantschel ◽  
Volker Schulz ◽  
Andreas Schulze ◽  
Esteban Angeletti ◽  
Firat Guder ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Silicon Nanowire ◽  
Electronic Devices ◽  
Longitudinal Axis ◽  
Two Dimensional ◽  
Electrical Measurements ◽  
Spreading Resistance ◽  
Sectioning Method ◽  
Etched Silicon

AbstractThe characterization of doped regions inside silicon nanowire structures poses a challenge which must be overcome if these structures are to be incorporated into future electronic devices. Precise cross-sectioning of the nanowire along its longitudinal axis is required, followed by two-dimensional electrical measurements with nanometer spatial resolution. The authors have developed an approach to cross-section silicon nanowires and to characterize them by scanning spreading resistance microscopy (SSRM). This paper describes a cleaving- and polishing-based cross-sectioning method for silicon nanowires. High resolution SSRM measurements are demonstrated for epitaxially grown and etched silicon nanowires.

Nanorobotic Strategies for Handling and Characterization of Metal-Assisted Etched Silicon Nanowires

2013 ◽  
Vol 18 (3) ◽  
pp. 887-894 ◽  
Author(s):  
Christian Stolle ◽  
Malte Bartenwerfer ◽  
Caroline Celle ◽  
Jean-Pierre Simonato ◽  
Sergej Fatikow
Keyword(s):  
Silicon Nanowires ◽  
Etched Silicon

Fabrication of silicon nanowire network in aluminum thin films

2005 ◽  
Vol 862 ◽  
Author(s):  
Vincent H. Liu ◽  
Husam H. Abu-Safe ◽  
Hameed A. Naseem ◽  
William D. Brown
Keyword(s):  
Thin Film ◽  
Silicon Nanowires ◽  
Silicon Nanowire ◽  
Vertical Direction ◽  
X Ray ◽  
Nanowire Network ◽  
Aluminum Thin Film ◽  
Nanowire Networks ◽  
Scanning Electron

AbstractThe formation of isolated silicon nanowires and silicon nanowire networks using aluminum thin film is investigated. The formation mechanism of the network mainly depends on the diffusion of silicon in the aluminum thin film. The silicon stops at the film grain boundaries. The continuous accumulations of silicon at these boundaries give raise to a continuous network of silicon nanowires. Characterization of the nanowires has been done using scanning electron microscopy and energy dispersive x-ray spectroscopy. These results are unique in the fact that the nanowires found are grown in a horizontal fashion instead of the more common vertical direction. Most of the nanowires have a diameter of about 60 nm and a length of over 10 μm.

Silicon Nanowire Electromechanical Switch for Logic Device Application

2007 ◽  
Vol 1018 ◽  
Author(s):  
Qiliang Li ◽  
Sang-Mo Koo ◽  
Monica D. Edelstein ◽  
John S. Suehle ◽  
Curt A. Richter
Keyword(s):  
Silicon Nanowires ◽  
Silicon Nanowire ◽  
Chemical Vapor ◽  
Metal Electrode ◽  
Subthreshold Slope ◽  
Logic Device ◽  
Metal Electrodes ◽  
Device Application ◽  
Switching Characteristics

AbstractIn this paper, we have reported the fabrication and characterization of nanowire electromechanical switches consisting of chemical-vapor-deposition grown silicon nanowires suspended over metal electrodes. The devices operate as transistors with the suspended part of the nanowire bent to touch metal electrode via electromechanical force by applying voltage. The reversible switching, large on/off current ratio, small subthreshold slope and low switching energy compared to current CMOSFET make the switches very attractive for logic device application. In addition, we have developed a physical model to investigate the switching characteristics and extract the material properties.

SILICON NANOWIRES FORMATION IN CMOS COMPATIBLE MANNER

2006 ◽  
Vol 05 (04n05) ◽  
pp. 445-451 ◽  
Author(s):  
AJAY AGARWAL ◽  
N. BALASUBRAMANIAN ◽  
N. RANGANATHAN ◽  
R. KUMAR
Keyword(s):  
Silicon Nanowires ◽  
Silicon Nanowire ◽  
Electrical Characterization ◽  
Single Electron Transistor ◽  
Bulk Silicon ◽  
Nanowire Diameter ◽  
Section Shape ◽  
Medical Sensors ◽  
Cmos Compatible

We present CMOS compatible fabrication technique for silicon nanowire ( SiNW ) on bulk silicon wafers. Our method uses saw-tooth etch-profiles of fins followed by self-limiting oxidation to form vertically self-aligned horizontal SiNW down to 5 nm diameter. The concept of modifying the cross-section shape of SiNW from triangular to circular and the ability to achieve desired nanowire diameter are unique in this work. Nanowires formed by such technique can be utilized to realize several nanoelectronics devices like gate-all-around transistor, single-electron-transistor, etc.; NEMS and bio-medical sensors; all in a CMOS friendly manner. The physical and electrical characterization of the SiNW is also presented in this paper.

scholarly journals Functionalization and Characterization of Silicon Nanowires for Sensing Applications: A Review

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 999
Author(s):  
Samuel Ahoulou ◽  
Etienne Perret ◽  
Jean-Marie Nedelec
Keyword(s):  
Silicon Nanowires ◽  
Radio Frequency Identification ◽  
Inorganic Compounds ◽  
Silicon Nanowire ◽  
High Surface ◽  
Volume Ratio ◽  
Point Of View ◽  
Sensing Applications ◽  
Frequency Identification

Silicon nanowires are attractive materials from the point of view of their electrical properties or high surface-to-volume ratio, which makes them interesting for sensing applications. However, they can achieve a better performance by adjusting their surface properties with organic/inorganic compounds. This review gives an overview of the main techniques used to modify silicon nanowire surfaces as well as characterization techniques. A comparison was performed with the functionalization method developed, and some applications of modified silicon nanowires and their advantages on those non-modified are subsequently presented. In the final words, the future opportunities of functionalized silicon nanowires for chipless tag radio frequency identification (RFID) have been depicted.

Thermal Characterization of Silicon Nanowires

2005 ◽  
Author(s):  
Wenjun Liu ◽  
Yizhang Yang ◽  
Mehdi Asheghi
Keyword(s):  
Dispersion Relation ◽  
Silicon Nanowires ◽  
Phonon Dispersion ◽  
Silicon Nanowire ◽  
Thermal Characterization ◽  
Phonon Transport ◽  
Phonon Confinement ◽  
Phonon Dispersion Relation ◽  
20 Nm

When crystalline solids are confined to the nanometer range, phonon transport within them can be significantly altered due to various effects, namely (i) increased boundary scattering; (ii) changes in phonon dispersion relation; and (iii) quantization of phonon transport. For example, theoretical studies (e.g., Chung et al., 2000) have suggested that, as the diameter of a silicon nanowire (NW) becomes smaller than 20 nm, the phonon dispersion relation, and therefore its density of states, could be modified due to phonon confinement. This in turn impacts the phonon group velocities and scattering rates that can further reduce the thermal conductivity of confined structures.

Optical Characterization of Oxide Encapsulated Silicon Nanowires of Various Morphologies

2008 ◽  
Vol 8 (8) ◽  
pp. 4202-4206 ◽  
Author(s):  
Sharon M. King ◽  
Shweta Chaure ◽  
Satheesh Krishnamurthy ◽  
Werner J. Blau ◽  
Alan Colli ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Silicon Oxide ◽  
Crystalline Silicon ◽  
Silicon Nanowire ◽  
Visible Spectrum ◽  
Optical Characterization ◽  
Nanocrystalline Silicon ◽  
Oxide Nanowires ◽  
Emitting Species

The optical properties of four different silicon nanowire structures were investigated. Two of the samples consisted of spheres of nanocrystalline silicon en-capsulated by silicon oxide nanowires, with other two consisting of crystalline silicon nanowires coated by silicon oxide shells. The nanostructures produced by oxide assisted growth consisted of spheres of crystalline silicon encapsulated by silicon oxide shells. The absorption and photoluminescence of the different structures of the sample are investigated. The emitting species responsible for photoluminescence across the visible spectrum are discussed.

Quantitative Two-Dimensional Carrier Mapping in Silicon Nanowire-Based Tunnel-Field Effect Transistors Using Scanning Spreading Resistance Microscopy

2010 ◽  
Vol 1258 ◽  
Author(s):  
Andreas Schulze ◽  
Thomas Hantschel ◽  
Pierre Eyben ◽  
Anne Vandooren ◽  
Rita Rooyackers ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
High Vacuum ◽  
Calibration Procedure ◽  
Successful Implementation ◽  
Two Dimensional ◽  
Carrier Distribution ◽  
Spreading Resistance ◽  
Fully Integrated

AbstractThe successful implementation of silicon nanowire (NW)-based tunnel-field effect transistors (TFET) critically depends on gaining a clear insight into the quantitative carrier distribution inside such devices. Therefore, we have developed a method based on scanning spreading resistance microscopy (SSRM) which allows quantitative two-dimensional (2D) carrier profiling of fully integrated NW-based TFETs with 2 nm spatial resolution. The keys in our process are optimized NW cleaving and polishing steps, in-house fabricated diamond tips with ultra-high resolution, measurements in high-vacuum and a dedicated calibration procedure accounting for dopant dependant carrier mobilities.

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