Surface Studies of Aluminum Mitride Thik Films

1988 ◽  
Vol 121 ◽  
Author(s):  
T. K. Hatwar ◽  
T. R. Pian
Keyword(s):  
Surface Layer ◽  
Electron Spectroscopy ◽  
Surface Region ◽  
Rf Magnetron Sputtering ◽  
Nitrogen Atmosphere ◽  
Columnar Microstructure ◽  
Near Surface ◽  
X Ray ◽  
Reactive Rf Magnetron Sputtering ◽  
Scanning Electron

ABSTRACTThe nature and the composition of the surface and near surface region of A1N films plays a significant role in determining their chemical and thermal stability. A1N thin films were deposited by reactive RF magnetron sputtering of Al in argon and nitrogen atmosphere. Transmission and scanning electron microscopy indicated that these films have a dense columnar microstructure with columns oriented along the c-axis of the A1N crystallites. X-ray photo-electron spectroscopy (XPS) revealed a graded oxygen-rich surface layer about 5–10 nm thick which is formed when the film is exposed to the atmosphere. This oxide is limited to the surface and does not grow even when the film is annealed at 600°C for 10 hours in dry oxygen. It is expected that this passivating oxygen rich surface layer will, to a large extent, determine the oxidation resistance of the fresh underlying AIN. A surface chemistry model is proposed for this protection behavior.

scholarly journals Формирование преципитатов в Si, имплантированном ионами -=SUP=-64-=/SUP=-Zn-=SUP=-+-=/SUP=- и -=SUP=-16-=/SUP=-O-=SUP=-+-=/SUP=-

2018 ◽  
Vol 52 (8) ◽  
pp. 827
Author(s):  
В.В. Привезенцев ◽  
Е.П. Kириленко ◽  
А.В. Горячев ◽  
А.В. Лютцау
Keyword(s):  
Mass Spectrometry ◽  
Surface Layer ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
Secondary Ion Mass Spectrometry ◽  
Near Surface ◽  
Secondary Ion ◽  
Post Implantation ◽  
Scanning Electron

AbstractThe results of studying the surface Si layer and precipitate formation in CZ n -Si(100) samples sequentially implanted with ^64Zn^+ ions with a dose of 5 × 10^16 cm^2 and energy of 100 keV and ^16O^+ ions with the same dose but an energy of 33 keV at room temperature so that their projection paths R _ p = 70 nm would coincide are presented. The post-implantation samples are annealed for 1 h in an inert Ar medium in the temperature range of 400–900°C with a step of 100°C. The profiles of the implanted impurities are studied by time-of-flight secondary ion mass spectrometry. The Si surface is visualized using a scanning electron microscope, while the near-surface layer is visualized with the help of maps of elements formed by Auger electron spectroscopy with profiling over depth. The ZnO(002) texture is formed in an amorphized Si layer after the implantation of Zn and O ions. ZnO(102) crystallites of 5 nm in size are found in a recrystallized single-crystalline Si layer after annealing in Ar at 700°C.

Electronic Impact of Inclusions in Diamond

2009 ◽  
Vol 1203 ◽  
Author(s):  
Erik M. Muller ◽  
John Smedley ◽  
Balaji Raghothamachar ◽  
Mengjia Gaowei ◽  
Jeffrey W. Keister ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Secondary Phase ◽  
Surface Region ◽  
Phase Region ◽  
Electron Trapping ◽  
Near Surface ◽  
X Ray ◽  
Photoconductive Gain ◽  
Single Crystal Diamond ◽  
Topography Data

AbstractX-ray topography data are compared with photodiode responsivity maps to identify potential candidates for electron trapping in high purity, single crystal diamond. X-ray topography data reveal the defects that exist in the diamond material, which are dominated by non-electrically active linear dislocations. However, many diamonds also contain defects configurations (groups of threading dislocations originating from a secondary phase region or inclusion) in the bulk of the wafer which map well to regions of photoconductive gain, indicating that these inclusions are a source of electron trapping which affect the performance of diamond X-ray detectors. It was determined that photoconductive gain is only possible with the combination of an injecting contact and charge trapping in the near surface region. Typical photoconductive gain regions are 0.2 mm across; away from these near-surface inclusions the device yields the expected diode responsivity.

scholarly journals Enhanced Diffusion of Dopants in Vacancy Supersaturation Produced by MeV Implantation

1997 ◽  
Vol 469 ◽  
Author(s):  
V. C. Venezia ◽  
T. E. Haynes ◽  
A. Agarwal ◽  
H. -J. Gossmann ◽  
D. J. Eaglesham
Keyword(s):  
Surface Layer ◽  
Surface Region ◽  
Silicon On Insulator ◽  
Rich Region ◽  
Near Surface ◽  
Enhanced Diffusion ◽  
Float Zone ◽  
Transient Enhanced Diffusion

ABSTRACTThe diffusion of Sb and B markers has been studied in vacancy supersaturations produced by MeV Si implantation in float zone (FZ) silicon and bonded etch-back silicon-on-insulator (BESOI) substrates. MeV Si implantation produces a vacancy supersaturated near-surface region and an interstitial-rich region at the projected ion range. Transient enhanced diffusion (TED) of Sb in the near surface layer was observed as a result of a 2 MeV Si+, 1×1016/cm2, implant. A 4× larger TED of Sb was observed in BESOI than in FZ silicon, demonstrating that the vacancy supersaturation persists longer in BESOI than in FZ. B markers in samples with MeV Si implant showed a factor of 10× smaller diffusion relative to markers without the MeV Si+ implant. This data demonstrates that a 2 MeV Si+ implant injects vacancies into the near surface region.

scholarly journals Anomalous Grazing X-ray Reflectometry for Determining the Number Density of Atoms in the Near-Surface Region

1996 ◽  
Vol 37 (1) ◽  
pp. 39-44 ◽  
Author(s):  
Masatoshi Saito ◽  
Eiichiro Matsubara ◽  
Yoshio Waseda
Keyword(s):  
Surface Region ◽  
Number Density ◽  
Near Surface ◽  
X Ray

OMCVD of thin films from metal diketonates and triphenylbismuth

1990 ◽  
Vol 5 (6) ◽  
pp. 1169-1175 ◽  
Author(s):  
A. D. Berry ◽  
R. T. Holm ◽  
M. Fatemi ◽  
D. K. Gaskill
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Strontium Barium ◽  
X Ray ◽  
Scanning Electron

Films containing the metals copper, yttrium, calcium, strontium, barium, and bismuth were grown by organometallic chemical vapor deposition (OMCVD). Depositions were carried out at atmospheric pressure in an oxygen-rich environment using metal beta-diketonates and triphenylbismuth. The films were characterized by Auger electron spectroscopy, Nomarski and scanning electron microscopy, and x-ray diffraction. The results show that films containing yttrium consisted of Y2O3 with a small amount of carbidic carbon, those with copper and bismuth were mixtures of oxides with no detectable carbon, and those with calcium, strontium, and barium contained carbonates. Use of a partially fluorinated barium beta-diketonate gave films of BaF2 with small amounts of BaCO3.

Characterization of hydrofluoric acid treated Y–Ba–Cu–O oxides

1989 ◽  
Vol 4 (6) ◽  
pp. 1320-1325 ◽  
Author(s):  
Q. X. Jia ◽  
W. A. Anderson
Keyword(s):  
Hydrofluoric Acid ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Surface Passivation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Zero Resistance ◽  
Reaction With Water ◽  
Scanning Electron

Effects of hydrofluoric acid (HF) treatment on the properties of Y–Ba–Cu–O oxides were investigated. No obvious etching of bulk Y–Ba–Cu–O and no degradation of zero resistance temperature were observed even though the oxides were placed into 49% HF solution for up to 20 h. Surface passivation of Y–Ba–Cu–O due to HF immersion was verified by subsequent immersion of Y–Ba–Cu–O in water. A thin layer of amorphous fluoride formed on the surface of the Y–Ba–Cu–O during HF treatment, which limited further reaction between Y–Ba–Cu–O and HF, and later reaction with water. Thin film Y–Ba–Cu–O was passivated by HF vapors and showed no degradation in Tc-zero after 30 min immersion in water. The properties of the surface layer of Y–Ba–Cu–O oxide after HF treatment are reported from Auger electron spectroscopy, x-ray diffraction, and scanning electron microscopy studies.

Analyse des Stuckgipses der Abtei Villers / Analysis of Stucco from the Abbey of Villers

1997 ◽  
Vol 3 (4) ◽  
pp. 381-396
Author(s):  
S. Chandra ◽  
D. Van Gemert
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Analysis ◽  
Electron Spectroscopy ◽  
Natural Polymer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Scanning Electron

Abstract Interior plaster from the Abbot's Palace of the Abbey of Villers-la-Ville, Brabant Wallon province, Belgium has been investigated. It is done by using chemical analysis, x-ray diffraction analysis, scanning electron microscopy, energy dispersive electron spectroscopy, and transmission electron microscopy. It is found that the rendering was made with lime rich mortar and animal hairs. The sand used was very fine and the hairs were very short. The solid constituents and the hairs were uniformly dispersed, which could have been obtained by the addition of some other natural polymer, containing protein.

Revealing the mechanism of the early stages of Ni–W RABiTS oxidation

2010 ◽  
Vol 25 (12) ◽  
pp. 2362-2370 ◽  
Author(s):  
Andrey V. Blednov ◽  
Oleg Yu. Gorbenko ◽  
Dmitriy P. Rodionov ◽  
Andrey R. Kaul
Keyword(s):  
Internal Oxidation ◽  
Photoelectron Spectroscopy ◽  
Oxidation Mechanism ◽  
Surface Oxidation ◽  
Surface Region ◽  
Near Surface ◽  
Precise Position ◽  
X Ray ◽  
Early Stages ◽  
Phase And Chemical Composition

The early stages of surface oxidation of biaxially textured Ni–W tapes were studied using thermodynamic calculations along with experimental tape oxidation at low P(O2). Tape phase and chemical composition, surface morphology, and roughness were examined using x-ray diffraction (XRD), energy-dispersive x-ray analysis (EDX), secondary ion mass spectroscopy (SIMS), x-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). For a Ni0.95W0.05 alloy tape, the precise position of the tape oxidation line in P(O2)–T coordinates was established. This line includes a break at T ≈ 650 °C that originates from the change of the W oxidation mechanism from internal oxidation to oxidation on a free surface accompanied by segregation of the alloy components in the tape near-surface region. The surface roughness of a polished tape increased drastically during internal oxidation of W; further tape oxidation did not affect the integral roughness parameters, but introduced numerous small (˜;100 nm) features on the tape surface comprising NiO precipitates.

scholarly journals Microstructure and Mechanical Properties of Ti + N Ion Implanted Cronidur30 Steel

Materials ◽  
2019 ◽  
Vol 12 (3) ◽  
pp. 427 ◽  
Author(s):  
Jie Jin ◽  
Wei Wang ◽  
Xinchun Chen
Keyword(s):  
Mechanical Properties ◽  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
Structural Modification ◽  
Surface Region ◽  
Grazing Incidence ◽  
Bearing Steel ◽  
Near Surface ◽  
X Ray ◽  
Ion Implanted

In this study, Ti + N ion implantation was used as a surface modification method for surface hardening and friction-reducing properties of Cronidur30 bearing steel. The structural modification and newly-formed ceramic phases induced by the ion implantation processes were investigated by transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and grazing incidence X-ray diffraction (GIXRD). The mechanical properties of the samples were tested by nanoindentation and friction experiments. The surface nanohardness was also improved significantly, changing from ~10.5 GPa (pristine substrate) to ~14.2 GPa (Ti + N implanted sample). The friction coefficient of Ti + N ion implanted samples was greatly reduced before failure, which is less than one third of pristine samples. Furthermore, the TEM analyses confirmed a trilamellar structure at the near-surface region, in which amorphous/ceramic nanocrystalline phases were embedded into the implanted layers. The combined structural modification and hardening ceramic phases played a crucial role in improving surface properties, and the variations in these two factors determined the differences in the mechanical properties of the samples.

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