Low Temperature Epitaxy of Hg1−xCdxTe

1988 ◽  
Vol 129 ◽  
Author(s):  
N. W. Cody ◽  
U. Sudarsan ◽  
R. Solanki
Keyword(s):  
Growth Rate ◽  
Electrical Properties ◽  
Low Temperature ◽  
Cadmium Telluride ◽  
Mercury Cadmium Telluride ◽  
Epitaxial Layers ◽  
High Quality ◽  
Temperature Range ◽  
Deposited Films ◽  
Low Temperature Epitaxy

ABSTRACTMercury cadmium telluride epitaxial layers have been grown using methylallyltelluride (MATe), dimethylcadmium (DMCd), and elemental Hg. Using these precursors high quality films have been achieved over the temperature range of 200-300°C. Comparisons are made between UV photon-assisted and thermally deposited films. Composition, growth rate, and electrical properties are compared for the two processes under various parameter conditions. Properties of films deposited on various substrates including CdTe, GaAs, and GaAs/Si are also described.

ФОРМИРОВАНИЕ ПЕРЕХОДНОГО СЛОЯ ALN НА ТЕМПЛЕЙТАХ 3С-SIC/SI(111) МЕТОДОМ АММИАЧНОЙ МОЛЕКУЛЯРНО-ЛУЧЕВОЙ ЭПИТАКСИИ

2020 ◽  
Vol 96 (3s) ◽  
pp. 148-153
Author(s):  
С.Д. Федотов ◽  
А.В. Бабаев ◽  
В.Н. Стаценко ◽  
К.А. Царик ◽  
В.К. Неволин
Keyword(s):  
Crystal Structure ◽  
Growth Rate ◽  
Low Temperature ◽  
Surface Morphology ◽  
Single Crystal ◽  
Root Mean Square Roughness ◽  
Rate Variation ◽  
Mean Square ◽  
Nucleation Layer ◽  
Low Temperature Epitaxy

Представлены результаты изучения морфологии поверхности и структуры слоев AlN, сформированных аммиачной МЛЭ на темплейтах 3C-SiC/Si(111) on-axis- и 4° off-axis-разориентации. Опробован технологический режим низкотемпературной эпитаксии зародышевого слоя AlN на поверхности 3C-SiC(111). Среднеквадратичная шероховатость поверхности (5 х 5 мкм) слоев AlN толщиной 150 ± 50 нм составила 2,5-3,5 нм на темплейтах 3C-SiC/Si(111) on-axis и 3,3-3,5 нм на 4° off-axis. Показано уменьшение шероховатости смачивающего слоя AlN при изменении скорости роста. Получены монокристаллические слои AlN(0002) со значениями FWHM (ω-геометрия) 1,4-1,6°. The paper presents the surface morphology and crystal structure of AlN layers formed by ammonia MBE on 3C-SiC/Si(111) on-axis and 4° off-axis disorientation. It offers the technological approach of low-temperature epitaxy of the AlN nucleation layer on the 3C-SiC (111) surface. Root mean square roughness (5 х 5 |xm) of AlN layers with thickness of 150 ± 50 nm was 2,5-3,5 nm onto on-axis templates and 3.3-3.5 nm onto 4° off-axis. It appears that the RMS roughness of the AlN surface is changing with the growth rate variation. Single-crystal AlN(0002) layers with FWHM values (ω-geometry) of 1.4-1.6° have been obtained.

Low-Temperature Processing Using Triple Alkoxide Precursors for Layer-Structured Perovskite Thin Films: Preparation and Characterization of Mbi2Ta2O9 (M: Ca or Ba) Thin Films

1999 ◽  
Vol 596 ◽  
Author(s):  
K. Kato
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Electrical Properties ◽  
Low Temperature ◽  
Surface Topography ◽  
Annealing Temperature ◽  
Low Temperature Processing ◽  
Deposited Films ◽  
Alkoxide Precursors

AbstractCaBi2Ta2O9 and BaBi2Ta2O9 thin films were successfully prepared by using triple alkoxide precursors such as Ca[BiTa(OC2H5)9]2 and Ba[BiTa(OC2H5)9]2, respectively. As-deposited films were amorphous and crystallized below 500°C by rapid thermal annealing in oxygen. The crystallinity improved with annealing temperature. The development of the crystal structure and surface topography of the thin films were investigated. Additionally, some electrical properties were evaluated.

Morphology Control, Dopant Incorporation, and Selective Epitaxial Growth of 4H-SiC at Low Temperatures Using CH3Cl Growth Precursor

2006 ◽  
Vol 911 ◽  
Author(s):  
Yaroslav Koshka ◽  
Bharat Krishnan ◽  
Huang-De Lin ◽  
Galyna Melnychuk
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Growth Surface ◽  
Epitaxial Layers ◽  
Selective Epitaxial Growth ◽  
Dopant Incorporation ◽  
Nitrogen Donor ◽  
Order Of Magnitude ◽  
Silicon Vapor

AbstractLow-temperature homoepitaxial growth of 4H-SiC using halo-carbon precursors was further investigated to address the problems limiting increase of the growth rate of the defect-free epilayers at growth temperatures below 1300°C. Enhanced etching of Si clusters in the gas phase was achieved by adding HCl during the low-temperature growth. The effective Si/C ratio above the growth surface was increased as a result of reduced depletion of silicon vapor species by cluster condensation, which resulted in drastically improved epilayer morphology and significant increase of the growth rate. An intentional insitu nitrogen doping of epitaxial layers during 1300°C growth on Si and C faces revealed more than an order of magnitude higher nitrogen donor incorporation in the C-face epitaxial layers. Finally, a feasibility of selective epitaxial growth using low-temperature masking materials such as SiO2 was demonstrated.

Electrical properties in low temperature range (5K–300K) of Tantalum Oxide dielectric MIM capacitors

2005 ◽  
Vol 45 (5-6) ◽  
pp. 925-928 ◽  
Author(s):  
E. Deloffre ◽  
L. Montès ◽  
G. Ghibaudo ◽  
S. Bruyère ◽  
S. Blonkowski ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Tantalum Oxide ◽  
Temperature Range ◽  
Mim Capacitors

scholarly journals Growth Of High Quality GaN Thin Films By MBE On Intermediate-temperature Buffer Layers

2000 ◽  
Vol 5 (1) ◽  
Author(s):  
W.K. Fong ◽  
C. F. Zhu ◽  
B. H. Leung ◽  
Charles Surya
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Electron Mobility ◽  
Unique Feature ◽  
Growth Conditions ◽  
Intermediate Temperature ◽  
Buffer Layers ◽  
Rf Plasma ◽  
Epitaxial Layers ◽  
High Quality

We report the growth of high quality GaN epitaxial layers by rf-plasma MBE. The unique feature of our growth process is that the GaN epitaxial layers are grown on top of a double layer that consists of an intermediate-temperature buffer layer (ITBL), which is grown at 690°C and a conventional low-temperature buffer layer deposited at 500°C. It is observed that the electron mobility increases steadily with the thickness of the ITBL, which peaks at 377 cm2V−1s−1 for an ITBL thickness of 800 nm. The PL also demonstrated systematic improvements with the thickness of the ITBL. Our analyses of the mobility and the photoluminescence characteristics demonstrate that the utilization of an ITBL in addition to the conventional low-temperature buffer layer leads to the relaxation of residual strain within the material resulting in improvement in the optoelectronic properties of the films. A maximum electron mobility of 430 cm2V−1s−1 can be obtained using this technique and further optimizing the growth conditions for the low-temperature buffer layer.

scholarly journals The elastic, magnetic, and electrical properties of Sr1–уYуCoO3–x cobaltites in the composition range 0.2 ≤ y ≤ 0.3

2020 ◽  
Vol 56 (2) ◽  
pp. 224-231
Author(s):  
M. V. Bushinsky ◽  
N. V. Tereshko ◽  
A. N. Chobot ◽  
O. S. Mantytskaya ◽  
V. V. Fedotova ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Phase Transformations ◽  
Composition Range ◽  
Magnetic Phase ◽  
Ceramic Technology ◽  
Temperature Phase ◽  
Temperature Range ◽  
Layered Cobaltites ◽  
Magnetic And Electrical Properties

Anion-deficient layered cobaltites Sr0.75Ln0.25CoO3–x (Ln is a lanthanide) have attracted the special attention of the scientists who study the nature of phase transformations in perovskite-like cobaltites, the anomalous behavior of the temperature magnetization of which is still the subject of scientific discussion. The purpose of this work is to investigate the regularity of changes in the elastic, magnetic, and electrical properties of layered cobaltites Sr1–уYуCoO3–x in the composition range 0.2 ≤ y ≤ 0.3 over a wide temperature range. The studied polycrystalline samples were obtained by the known ceramic technology in the air. Electron microscopic studies were performed on a LEO 1455 PV scanning electron microscope. The temperature dependence of the Young’s modulus was studied by the method of resonance vibrations in the frequency range 1000–6000 Hz and in the temperature range 100–450 K. X-ray phase analysis was performed on a DRON-3M diffractometer under Cu-Kα radiation. Magnetic measurements were performed using a physical property measurement system (Cryogenic Ltd.) in the temperature range 5–325 K. As a result of the studies, it was found that in the temperature range 25–300 K, Sr1–уYуCoO3–x solid solutions (0.2 ≤ y ≤ 0.3) are characterized by the semiconductor-like conductivity. No significant magnetoresistive effect was observed in this temperature range for the studied compositions. It was shown that the Sr1–уYуCoO3–x solid solution (у = 0.25) exhibits two magnetic phase transformations: low-temperature near 220 K and high-temperature at 350 K. The nearby compositions of the concentration range 0.2 ≤ y ≤ 0.3 exhibit magnetic phase transformations at temperatures above room temperature. No low-temperature phase transitions were detected in them. It has been established that magnetic phase transformations are accompanied by structural transitions at corresponding temperatures.

scholarly journals Anion-exchange synthesis of thermoelectric layered SnS0.1Se0.9−xTex nano/microstructures in aqueous solution: complexity and carrier concentration

2019 ◽  
Vol 7 (25) ◽  
pp. 7572-7579 ◽  
Author(s):  
Lisi Huang ◽  
Guang Han ◽  
Bin Zhang ◽  
Duncan H. Gregory
Keyword(s):  
Aqueous Solution ◽  
Electrical Properties ◽  
Low Temperature ◽  
Carrier Concentration ◽  
Anion Exchange ◽  
Temperature Range

Nanostructured SnS0.1Se0.9−xTex quaternary chalcogenides have been synthesized via anion exchange; sintered SnS0.1Se0.88Te0.02 achieves enhanced electrical properties in the low-temperature range.

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