Proton Effects in KTiOPO4

1989 ◽  
Vol 172 ◽  
Author(s):  
P. A. Morris ◽  
M. K. Crawford ◽  
M. G. Roelofs ◽  
J. D. Bierlein ◽  
P. K. Gallagher ◽  
...  
Keyword(s):  
Activation Energy ◽  
High Temperature ◽  
Ionic Conductivity ◽  
Defect Complex ◽  
Temperature Dependent ◽  
Cooperative Motion ◽  
Oxygen Sublattices ◽  
Defect Mechanism ◽  
Damage Susceptibility

AbstractEvidence supporting the temperature dependent defect mechanism of nonstoichiometry on the potassium and oxygen sublattices in KTP is presented. The primary compensating defects for the formation of vacant potassium sites in typical flux grown KTP are vacant oxygen sites. Protons (OH-) are the principal defect compensating for the formation of vacant potassium sites in high temperature hydrothermal KTP. A model of the ionic conductivity in high temperature hydrothermal KTP is proposed in which specific protons participate in cooperative motion over a limited distance with the potassium vacancies migrating along the “channels” in the structure in the Z-direction. The higher activation energy measured for ionic conductivity in flux grown KTP (0.5 eV) relative to high temperature hydrothermal (0.3 eV) is suggested to be due to the energy required to dissociate from a defect complex, such as a (VO - VK). The correlation of ionic conductivity to damage susceptibility appears to be due to the levels of compensating defects for vacant potassium sites in KTP, which are related to the concentrations of Ti3+ formed in the crystals. Further study is ongoing to understand the specific mechanisms involved in the ionic conductivity and damage in KTP grown by the flux and hydrothermal techniques.

Ionic conductivity of acceptor doped sodium bismuth titanate: influence of dopants, phase transitions and defect associates

2017 ◽  
Vol 5 (35) ◽  
pp. 8958-8965 ◽  
Author(s):  
Leonie Koch ◽  
Sebastian Steiner ◽  
Kai-Christian Meyer ◽  
In-Tae Seo ◽  
Karsten Albe ◽  
...  
Keyword(s):  
Phase Transitions ◽  
Ionic Conductivity ◽  
Complex Formation ◽  
Bismuth Titanate ◽  
Dopant Concentration ◽  
Phase Coexistence ◽  
Defect Complex ◽  
Temperature Dependent ◽  
Sodium Bismuth Titanate ◽  
Formation Phase

The temperature dependent ionic conductivity of NBT results from an interplay of defect complex formation, phase coexistence, and dopant concentration.

High Temperature n- and p-type Doped Microcrystalline Silicon Layers Grown by VHF PECVD Layer-by-Layer Deposition

2003 ◽  
Vol 762 ◽  
Author(s):  
A. Gordijn ◽  
J.K. Rath ◽  
R.E.I. Schropp
Keyword(s):  
Activation Energy ◽  
High Temperature ◽  
High Temperatures ◽  
Continuous Wave ◽  
Hydrogen Plasma ◽  
Silicon Layer ◽  
Dark Conductivity ◽  
High Deposition Rate ◽  
Layer By Layer ◽  
Microcrystalline Silicon

AbstractDue to the high temperatures used for high deposition rate microcrystalline (μc-Si:H) and polycrystalline silicon, there is a need for compact and temperature-stable doped layers. In this study we report on films grown by the layer-by-layer method (LbL) using VHF PECVD. Growth of an amorphous silicon layer is alternated by a hydrogen plasma treatment. In LbL, the surface reactions are separated time-wise from the nucleation in the bulk. We observed that it is possible to incorporate dopant atoms in the layer, without disturbing the nucleation. Even at high substrate temperatures (up to 400°C) doped layers can be made microcrystalline. At these temperatures, in the continuous wave case, crystallinity is hindered, which is generally attributed to the out-diffusion of hydrogen from the surface and the presence of impurities (dopants).We observe that the parameter window for the treatment time for p-layers is smaller compared to n-layers. Moreover we observe that for high temperatures, the nucleation of p-layers is more adversely affected than for n-layers. Thin, doped layers have been structurally, optically and electrically characterized. The best n-layer made at 400°C, with a thickness of only 31 nm, had an activation energy of 0.056 eV and a dark conductivity of 2.7 S/cm, while the best p-layer made at 350°C, with a thickness of 29 nm, had an activation energy of 0.11 V and a dark conductivity of 0.1 S/cm. The suitability of these high temperature n-layers has been demonstrated in an n-i-p microcrystalline silicon solar cell with an unoptimized μc-Si:H i-layer deposited at 250°C and without buffer. The Voc of the cell is 0.48 V and the fill factor is 70 %.

scholarly journals Using Reverse Osmosis Membrane at High Temperature for Water Recovery and Regeneration from Thermo-Responsive Ionic Liquid-Based Draw Solution for Efficient Forward Osmosis

Membranes ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 588
Author(s):  
Eiji Kamio ◽  
Hiroki Kurisu ◽  
Tomoki Takahashi ◽  
Atsushi Matsuoka ◽  
Tomohisa Yoshioka ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
High Temperature ◽  
Energy Saving ◽  
Osmotic Pressure ◽  
Reverse Osmosis ◽  
Forward Osmosis ◽  
Solution Temperature ◽  
Water Recovery ◽  
Temperature Dependent ◽  
Draw Solution

Forward osmosis (FO) membrane process is expected to realize energy-saving seawater desalination. To this end, energy-saving water recovery from a draw solution (DS) and effective DS regeneration are essential. Recently, thermo-responsive DSs have been developed to realize energy-saving water recovery and DS regeneration. We previously reported that high-temperature reverse osmosis (RO) treatment was effective in recovering water from a thermo-responsive ionic liquid (IL)-based DS. In this study, to confirm the advantages of the high-temperature RO operation, thermo-sensitive IL-based DS was treated by an RO membrane at temperatures higher than the lower critical solution temperature (LCST) of the DS. Tetrabutylammonium 2,4,6-trimethylbenznenesulfonate ([N4444][TMBS]) with an LCST of 58 °C was used as the DS. The high-temperature RO treatment was conducted at 60 °C above the LCST using the [N4444][TMBS]-based DS-lean phase after phase separation. Because the [N4444][TMBS]-based DS has a significantly temperature-dependent osmotic pressure, the DS-lean phase can be concentrated to an osmotic pressure higher than that of seawater at room temperature (20 °C). In addition, water can be effectively recovered from the DS-lean phase until the DS concentration increased to 40 wt%, and the final DS concentration reached 70 wt%. From the results, the advantages of RO treatment of the thermo-responsive DS at temperatures higher than the LCST were confirmed.

scholarly journals High-Temperature Deformation of Naturally Aged 7010 Aluminum Alloy

Metals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 581
Author(s):  
Abdulhakim A. Almajid
Keyword(s):  
Activation Energy ◽  
Aluminum Alloy ◽  
High Temperature ◽  
Threshold Stress ◽  
Activation Energies ◽  
Temperature Deformation ◽  
High Temperature Range ◽  
Temperature Range ◽  
True Activation Energy ◽  
Two Temperatures

This study is focused on the deformation mechanism and behavior of naturally aged 7010 aluminum alloy at elevated temperatures. The specimens were naturally aged for 60 days to reach a saturated hardness state. High-temperature tensile tests for the naturally aged sample were conducted at different temperatures of 573, 623, 673, and 723 K at various strain rates ranging from 5 × 10−5 to 10−2 s−1. The dependency of stress on the strain rate showed a stress exponent, n, of ~6.5 for the low two temperatures and ~4.5 for the high two temperatures. The apparent activation energies of 290 and 165 kJ/mol are observed at the low, and high-temperature range, respectively. These values of activation energies are greater than those of solute/solvent self-diffusion. The stress exponents, n, and activation energy observed are rather high and this indicates the presence of threshold stress. This behavior occurred as a result of the dislocation interaction with the second phase particles that are existed in the alloy at the testing temperatures. The threshold stress decreases in an exponential manner as temperature increases. The true activation energy was computed by incorporating the threshold stress in the power-law relation between the stress and the strain. The magnitude of the true activation energy, Qt dropped to 234 and 102 kJ/mol at the low and high-temperature range, respectively. These values are close to that of diffusion of Zinc in Aluminum and diffusion of Magnesium in Aluminum, respectively. The Zener–Hollomon parameter for the alloy was developed as a function of effective stress. The data in each region (low and high-temperature region) coalescence in a segment line in each region.

The activation energy U(T,B) in high temperature superconductor

2020 ◽  
Vol 92 (2) ◽  
pp. 20601
Author(s):  
Abdelaziz Labrag ◽  
Mustapha Bghour ◽  
Ahmed Abou El Hassan ◽  
Habiba El Hamidi ◽  
Ahmed Taoufik ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Activation Energy ◽  
Phase Diagram ◽  
High Temperature ◽  
Apparent Activation Energy ◽  
High Temperature Superconductor ◽  
Flux Flow ◽  
Resistivity Measurements ◽  
Vortex Phase ◽  
The Magnetic Field

It is reported in this paper on the thermally assisted flux flow in epitaxial YBa2Cu3O7-δ deposited by Laser ablation method on the SrTiO3 substrate. The resistivity measurements ρ (T, B) of the sample under various values of the magnetic field up to 14T in directions B∥ab-plane and B∥c-axis with a dc weak transport current density were investigated in order to determine the activation energy and then understand the vortex dynamic phenomena and therefore deduce the vortex phase diagram of this material. The apparent activation energy U0 (B) calculated using an Arrhenius relation. The measured results of the resistivity were then adjusted to the modified thermally assisted flux flow model in order to account for the temperature-field dependence of the activation energy U (T, B). The obtained values from the thermally assisted activation energy, exhibit a behavior similar to the one showed with the Arrhenius model, albeit larger than the apparent activation energy with ∼1.5 order on magnitude for both cases of the magnetic field directions. The vortex glass model was also used to obtain the vortex-glass transition temperature from the linear fitting of [d ln ρ/dT ] −1 plots. In the course of this work thanks to the resistivity measurements the upper critical magnetic field Hc2 (T), the irreversibility line Hirr (T) and the crossover field HCrossOver (T) were located. These three parameters allowed us to establish a phase diagram of the studied material where limits of each vortex phase are sketched in order to optimize its applicability as a practical high temperature superconductor used for diverse purposes.

Temperature-dependent activation energy and variable range hopping in semi-insulating GaAs

2006 ◽  
Vol 21 (12) ◽  
pp. 1681-1685 ◽  
Author(s):  
R M Rubinger ◽  
G M Ribeiro ◽  
A G de Oliveira ◽  
H A Albuquerque ◽  
R L da Silva ◽  
...  
Keyword(s):  
Activation Energy ◽  
Variable Range Hopping ◽  
Temperature Dependent ◽  
Variable Range

Hydrogenation of methylacetylene. III. The reaction of methylacetylene with hydrogen catalyzed by nickel, copper, and their alloys

1968 ◽  
Vol 46 (4) ◽  
pp. 623-633 ◽  
Author(s):  
R. S. Mann ◽  
K. C. Khulbe
Keyword(s):  
Activation Energy ◽  
Nickel Catalyst ◽  
Hydrogen Pressure ◽  
Constant Volume ◽  
Temperature Dependent ◽  
Nickel Copper ◽  
Wide Range ◽  
Initial Hydrogen Pressure

The reaction between methylacetylene and hydrogen over unsupported nickel, copper, and their alloys has been investigated in a static constant volume system between 20 and 220 °C for a wide range of reactant ratios. The order of reaction with respect to hydrogen was one and nearly independent of temperature. While the order of reaction with respect to methylacetylene over nickel catalyst was slightly negative and temperature dependent, it was always positive and nearly independent of temperature for copper and copper-rich alloys. Selectivity was independent of initial hydrogen pressure for nickel and copper only; for others it decreased rapidly with increasing hydrogen pressure. The overall activation energy varied between 9 and 21.2 kcal/g mole. Selectivity and extent of polymerization increased with increasing amount of copper in the alloy.

Conductivity-Temperature Dependent Studies on MG49 Doped Lithium Triflate Salt

2015 ◽  
Vol 1107 ◽  
pp. 181-186
Author(s):  
Zaidatul Salwa Mahmud ◽  
N.H.M. Zaki ◽  
R. Zakaria ◽  
Mohamad Faizul Yahya ◽  
Ab Malik Marwan Ali
Keyword(s):  
Ionic Conductivity ◽  
Elevated Temperatures ◽  
Ethylene Carbonate ◽  
Ionic Mobility ◽  
Ionic Conductors ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
Lithium Triflate ◽  
Mobility Of Charge Carriers ◽  
Solution Cast

This paper reports on the conductivity-temperature studies of gel polymer electrolytes (GPEs) based on 49% poly (methyl methacrylate) grafted-natural rubber (MG49) doped with lithium triflate salt (LiTf) and plasticized with ethylene carbonate (EC). The GPE films are prepared by solution cast technique. The X-ray diffraction (XRD) studies reveal the polymer electrolyte systems are amorphous. AC impedance spectroscopy is carried out in the temperature range between 303 and 373 K. The magnitudes of conductivity observed are strongly dependent on salt concentration and temperature. The high ionic conductivity at elevated temperatures of GPE is attributed to the high ionic mobility of charge carriers. The ionic migration is seen to follow the VTF behavior and approaches to Arrhenius rule at high and low at temperature. Ionic conductivity relaxation appears to be a characteristic of the ionic polarization and the modulus formalism studies confirmed the GPEs in the present investigation are ionic conductors.

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