Grain Boundary Confinement in Soi Films Using Patterned Ar Coatings and Seeded Oscillatory Growth

1983 ◽  
Vol 23 ◽  
Author(s):  
C.I. Drowley ◽  
P. Zorabedian ◽  
T.I. Kamins
Keyword(s):  
Grain Boundary ◽  
Laser Beam ◽  
Single Crystal ◽  
Grain Boundaries ◽  
Silicon On Insulator ◽  
Mos Transistors ◽  
Etch Pits ◽  
Polysilicon Films ◽  
Regular Arrays ◽  
Ar Coating

ABSTRACTRegular arrays of grain-boundary-free silicon strips several hundred microns long have been produced in a silicon-on-insulator (SOI) structure by using a patterned anti-reflection (AR) coating in combination with seeded oscillatory growth techniques. The AR coating pattern consists of a series of parallel stripes (typically 10 μm wide, separated by 10 μm spaces) starting from a seeding window. A laser beam (typically a 50 μm × 250 μm elliptical beam) is scanned perpendicular to the stripes, with the long axis of the beam parallel to the scan direction. The beam is stepped 1–2 μm between successive scans to advance the single crystal along the direction of the AR stripes. Grain boundaries are confined to the region under the AR stripes. Stereographic analysis of KOH etch pits formed in the single crystal strips has shown that the orientation of the stripes gradually rotates from (001)[110] to (013)[331] as the crystal propagates away from the seed. MOS transistors formed in the single-crystal strips have mobilities comparable to devices formed in bulk films. These mobilities are approximately 20% higher than those found in devices formed in large-grain recrystallized polysilicon films.

A Highly Reliable Al Line with Controlled Texture and Grain Boundaries

1995 ◽  
Vol 391 ◽  
Author(s):  
M. Hasunuma ◽  
H. Toyoda ◽  
T. Kawanoue ◽  
S. Ito ◽  
H. Kaneko ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Single Crystal ◽  
Grain Boundaries ◽  
Empirical Relation ◽  
Boundary Structure ◽  
Homogeneous Microstructure ◽  
Grain Boundary Structure ◽  
Dislocation Arrays ◽  
Order Of Magnitude ◽  
Individual Grains

AbstractIn order to clarify the relationship between Al line reliability and film microstructure, especially grain boundary structure and crystal texture, we have tested three kinds of highly textured Al lines, namely, single-crystal Al line, quasi-single-crystal Al line and hypertextured Al line, and two kinds of conventional Al lines deposited on TiN/Ti and on SiO2. Consequently, the empirical relation between the electromigration (EM) lifetime of Al line † and the (111) full width at half maximum (FWHM) value ω is described by † ∝ ω-2 [1]. This improvement of Al line reliability results from as following reasons; firstly, homogeneous microstructure and high activation energy of 1.28eV for the single-crystal Al line (ω=0.18°); secondly, sub-grain boundaries which consisted of dislocation arrays found in the quasi-single-crystal Al line (ω=0.26°) has turned out to be no more effective mass transport paths because dislocation lines are perpendicular to the direction of electron wind. Although there exist plural grain boundary diffusion paths in the newly developed hypertextured Al line (ω=0.5°) formed by using an amorphous Ta-Al underlayer {1], the vacancy flux along the line has been suppressed to the same order of magnitude of single crystal line. It has been clarified that the decrease of FWHM value has promoted the formation of sub-grain boundaries and low-angle boundaries with detailed orientation analysis of individual grains in the hypertextured film. The longer EM lifetime for the hypertextured Al line is considered to be due to the small grain boundary diffusivities for these stable grain boundaries, and this diffusivity reduction resulted in the suppression of void/hillock pair in the Al lines. These results have confirmed that controlling texture and/or grain boundary itself is a promising approach to develop reliable Al lines which withstand higher current densities required in future ULSIs.

On {h,1,1}, the Recrystallisation Texture of Heavily Cold Rolled BCC Steel

2004 ◽  
Vol 467-470 ◽  
pp. 269-274 ◽  
Author(s):  
Hotaka Homma ◽  
Shuichi Nakamura ◽  
Naoki Yoshinaga
Keyword(s):  
Grain Boundary ◽  
Cold Rolling ◽  
Single Crystal ◽  
Grain Boundaries ◽  
Rolling Direction ◽  
Experimental Results ◽  
Rolled Steel ◽  
Fibre Structure ◽  
Pole Figures ◽  
Cold Rolled

Heavily cold rolled BCC steel has been indicated to generate {411}<148> recrystallisation texture and its family orientations which might be represented as {h,1,1}<1/h,1,2>. As a-fibre structure, or RD//<011> texture is significantly developed during the cold rolling, it is naturally speculated to be the recrystallisation site of {h,1,1}<1/h,1,2> fibre. The present paper prompts to demonstrate the recrystallisation procedure by utilising EBSP-OIM analysis. The first demonstration was carried out with OIM analysis on partially recrystallised cold rolled steel. At the stage of 50% recrystallisation, only ND//<111> texture has appeared for the recrystallised area. {100}<011> - {211}<011> a-fibre remains as deformed structure, and several {h,1,1}<1/h,1,2> grains could be found at the grain boundaries. Therefore, a bi-crystal of {100}<011> was employed to simulate the irregular deformation at the grain boundary. After cold rolling, a warp toward the grain boundary was observed. Although the interior of the {100}<011> single crystal was hardly recrystallised, sharp {411}<148> texture was created along the grain boundary. In order to confirm the phenomenon, another experiment was carried out that a cold rolled {100}<011> single crystal was bent along the rolling direction and annealed. Very sharp {411}<148> recrystallisation texture was formed again at the bent perimeter. These experimental results lead us to conclude that the irregular strain was sufficiently piled at the grain boundary after the heavy deformation and generates {h,1,1}<1/h,1,2> texture. On {100} pole figures, the recrystallisation textures were equivalently scattered around three <100> poles, therefore the rotation relationship around <111> axes with the original orientation was suggested.

Annealing Texture in a Rolled and Artificially Nucleated Aluminum Single Crystal

1958 ◽  
Vol 2 ◽  
pp. 7-22
Author(s):  
S. Kohara ◽  
M. N. Parthasarathi ◽  
Paul A. Beck
Keyword(s):  
Grain Boundary ◽  
Single Crystal ◽  
Grain Boundaries ◽  
Pure Aluminum ◽  
Boundary Edge ◽  
Orientation Relationships ◽  
Aluminum Single Crystal ◽  
Self Diffusion ◽  
Large Numbers ◽  
The Matrix

AbstractIt has been suggested that the experimentally observed orientation dependence of the mobility of grain boundaries in f.c.c. metals may be related to the dependence of the rate of self diffusion in grain boundaries on the disorientation across the boundary. Later, this relative orientation effect on the rate of boundary diffusion and self diffusion was experimentally observed. It was shown by Hoffman and Turnbull that in bicrystals of silver misoricnted around (100) by 9° to 28°, self diffusion along the boundary (parallel to the common (100)) may be described in terms of a coefficient of self diffusion in individual grain boundary edge dislocation pipes, orders of magnitude larger than the coefficient of lattice self diffusion. It is significant that the coefficient of self diffusion in grain boundary dislocation pipes was found to be independent of the misorientation (i.e., of the density of edge dislocations in the boundary) at least up to 28°, suggesting that even a boundary of such a great misorientation may be considered as a network of dislocations, as far as self diffusion is concerned.In recent experiments the relative mobilities of boundaries in various orientations between a deformed (99.98% pure) aluminum single crystal and recrystallized grains growing in it in fairly well defined, lattice orientation relationships were compared. The matrix crystal was rolled to 80% R.A. on a (110) plane in a [112] direction, after which the strip still retained its initial orientation and the texture was very sharp. Recrystallized grains quite accurately oriented so as to have highest overall boundary mobility, i.e., corresponding to 40° rotations around the two 111 axes of the matrix grain lying in the rolling plane, were produced in large numbers by random nucleation on one side of the strip (rubbing one side with sandpaper and annealing). The re crystallized grains, that were at first growing in very large numbers and quite randomly but only in the thin surface layer highly deformed by abrasion (nucleation side), on annealing for 600 sec at 350°C grew across the whole thickness (0,010″) of the rolled single crystal. As a result of very selective growth, the recrystallized grains reaching the other side of the strip (growth side) showed a very sharp texture consisting of four components with the orientations described.

Analysis of defect formation in Nb-doped SrTiO3 by impedance spectroscopy

2001 ◽  
Vol 16 (1) ◽  
pp. 192-196 ◽  
Author(s):  
Seong-Ho Kim ◽  
Jung-Ho Moon ◽  
Jae-Hwan Park ◽  
Jae-Gwan Park ◽  
Yoonho Kim
Keyword(s):  
Activation Energy ◽  
Impedance Spectroscopy ◽  
Grain Boundary ◽  
Single Crystal ◽  
Grain Boundaries ◽  
Thermal Activation ◽  
Oxygen Vacancies ◽  
Defect Formation ◽  
Activation Energies ◽  
Single Grain

The thermal activation energies for conduction of Nb-doped SrTiO3 grains and grain boundaries have been investigated by impedance spectroscopy. First, to observe the effect of electrode/SrTiO3 bulk interface, the varied impedances of SrTiO3 single crystal were measured with temperatures. The activation energy of an electrode/bulk interface was determined to be 1.3 eV, whereas that of bulk was 0.8 eV. When the impedances of Nb-doped SrTiO3 ceramics were measured, it was suggested that the more precise impedance values of a single grain and a single grain to grain junction be obtained using a microelectrode method. The activation energies for a grain, a grain boundary, and an electrode/bulk interface were determined to be about 0.8, 1.3, and 1.5 eV, respectively. From these measured results, it was suggested that the activation energy, 0.8 eV, measured in grain was originated from oxygen vacancies and the activation energy, 1.3 eV, in grain boundary was from strontium vacancies.

Lateral Seeding of Silicon-On-Insulator Using an Elliptical Laser Beam: A Comparison of Scanning Methods

1984 ◽  
Vol 33 ◽  
Author(s):  
P. Zorabedian ◽  
T. I. Kamins
Keyword(s):  
Laser Beam ◽  
Single Crystal ◽  
Leakage Current ◽  
Silicon Film ◽  
Stacking Faults ◽  
Single Crystal Silicon ◽  
Silicon On Insulator ◽  
Crystal Silicon ◽  
Mos Transistor ◽  
Lateral Offset

ABSTRACTTwo scanning methods for laterally-seeded recrystallization of striped silicon-on-insulator/seed structures with an elliptical laser beam are discussed. One method requires repeated remelting of the silicon film and is controlled by the temperature of the substrate, which is locally heated by the beam. This method results in very few defects and single-crystal silicon-on-insulator stripes up to 50 μm wide. The second method involves little remelting and is primarily controlled by the lateral offset of the beam with respect to the stripes. Single-crystal silicon-on-insulator stripes up to 40 μm wide have been obtained, with defects consisting primarily of stacking faults and twins, as well as some grain boundaries. These defects show little effect on MOS transistor leakage current.

Laser Recrystallization and 3D Integration

1984 ◽  
Vol 35 ◽  
Author(s):  
J.P. Colinge
Keyword(s):  
Single Crystal ◽  
Grain Boundaries ◽  
High Speed ◽  
Silicon On Insulator ◽  
Cmos Circuits ◽  
3D Integration ◽  
Stages Of Development ◽  
3D Ics ◽  
Laser Recrystallization ◽  
Integrated Structures

ABSTRACTThere are various methods for producing device-worthy Silicon-on-Insulator films, most, however, are unsuitable for fabrication of 3D integrated structures. The laser recrystallization technique is currently the only one which has produced single-crystal devices for 3D ICs. Improvements on this technique have been such that defects such as grain boundaries can be localized and even eliminated. High speed CMOS circuits with VLSI features have been realized as well as new devices which take advantage of the 3D arrangement of vertically integrated structures. Although 3D integration is still in the early stages of development, it has already opened up new perspectives for applications such as high speed circuits, dense memories, and sensors.

Sans Measurements of Deuterium Trapped at Grain Boundaries in Palladium

1993 ◽  
Vol 319 ◽  
Author(s):  
Brent J. Heuser ◽  
John S. King ◽  
George C. Summerfield
Keyword(s):  
Grain Boundary ◽  
Single Crystal ◽  
Grain Boundaries ◽  
Cross Sections ◽  
Cold Working ◽  
Boundary Surface ◽  
Surface Concentration ◽  
Calculated Effect ◽  
Scattering Response

AbstractSmall-angle neutron scattering from grain boundary interfaces has been investigated in polycrystal palladium with and without deuterium dissolved in the solution phase. Polycrystalline samples were prepared using two different procedures: (1) single crystal material was recrystallized at 517°C after 78% cold working, and (2) an extruded polycrystal rod was investigated as received, or recrystallized at 600°C and 680°C. The expected 1/Q2 scattering profile (where Q is the neutron wavevector transfer) from grain boundaries has been observed, and the absolute cross sections permit a determination of the grain boundary surface concentration of missing palladium atoms and of trapped deuterium. The vacancy and trapped deuterium surface concentration determined in these measurements was 0.2-0.3 vacancies/Å2 and 0.4-0.6 deuterons/Å2, respectively. The measurements were extended to the low Q region (Q ≥0.006 1/Å) where the scattering response was dominated by Porod 1/Q4 behavior typical of internal voids. This behavior was especially strong for the samples fabricated from the extruded polycrystal, but was also present in the as-received single crystal. The degradation of the single crystal Porod response after compressional cold working is in reasonable agreement with the calculated effect of flattening a spherical void.

Single Crystalline SOI Square Islands Fabricated by Laser Recrystallization Using a Surrounding Antireflection Cap and Successive Self-Aligned Isolation Utilizing the Same Cap

1984 ◽  
Vol 35 ◽  
Author(s):  
R. Mukai ◽  
N. Sasaki ◽  
T. Iwai ◽  
S. Kawamura ◽  
M. Nakano
Keyword(s):  
Grain Boundary ◽  
Laser Beam ◽  
Grain Boundaries ◽  
Crystalline Silicon ◽  
Silicon Film ◽  
High Density ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Laser Recrystallization ◽  
Silicon Islands

ABSTRACTA new laser recrystallizing technique has been developedfor high density SOI-LSI's. This technique produces single crystalline silicon islands on an amorphous insulating layerwithout seed. Square windows are opened at arbitrary places in an antireflection cap over a polycrystalline film on an amorphous insulatinq layer. Grain boundaries of the polycrystalline Si in the window are removed completely at the subsequent laser-recrystallization step. Single crystalline silicon islands are formed by self-aligned etching of silicon film which was covered by the antireflection cap. This technique is an effective method for fabricating high density SOI-LSI's, since the singlecrystalline islands can be fabricated at arbitrarily selected places. Yield of the grain-boundary-free islands was 95% the size of the island is 1O x 20μm, and the irradiation oyerlap of laser-beam traces is 70%.

Beam Shaping for Cw Laser Recrystallization of Polysilicon Films

1982 ◽  
Vol 13 ◽  
Author(s):  
P. Zorabedian ◽  
C.I. Drowley ◽  
T.I. Kamins ◽  
T.R. Cass
Keyword(s):  
Single Crystal ◽  
Grain Boundaries ◽  
Beam Shaping ◽  
Grain Structure ◽  
Shaped Beam ◽  
Cw Laser ◽  
Laser Recrystallization ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Polysilicon Films

ABSTRACTA shaped laser beam has been used for laterally seeded recrystallization of polysilicon films over oxide. Direct maps of the shaped-beam intensity distribution in the wafer plane are correlated with the grain structure of the recrystallized polysilicon. Using 60% overlapping of shaped-beam scans along <100> directions, we have obtained seeded areas one mm wide and 50 to 500μm long. These consist of 40μm-wide adjacent single-crystal strips regularly separated by low-angle grain boundaries extending laterally away from the seed openings. The spacing between grain boundaries is equal to the scan spacing, providing a means for controlling the location of grain boundaries in otherwise defect-free, single-crystal films.

Measurement of the Displacement Across a Coincidence Grain Boundary

1977 ◽  
Vol 35 ◽  
pp. 124-125
Author(s):  
J. W. Matthews ◽  
W. M. Stobbs
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Stacking Fault ◽  
The Other ◽  
Measuring Technique ◽  
High Angle ◽  
Twin Boundaries ◽  
Rigid Displacement ◽  
Cubic Crystals ◽  
Lattice Displacement

Many high-angle grain boundaries in cubic crystals are thought to be either coincidence boundaries (1) or coincidence boundaries to which grain boundary dislocations have been added (1,2). Calculations of the arrangement of atoms inside coincidence boundaries suggest that the coincidence lattice will usually not be continuous across a coincidence boundary (3). There will usually be a rigid displacement of the lattice on one side of the boundary relative to that on the other. This displacement gives rise to a stacking fault in the coincidence lattice.Recently, Pond (4) and Smith (5) have measured the lattice displacement at coincidence boundaries in aluminum. We have developed (6) an alternative to the measuring technique used by them, and have used it to find two of the three components of the displacement at {112} lateral twin boundaries in gold. This paper describes our method and presents a brief account of the results we have obtained.

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