Deposition of Tungsten Nitride thin Films from (tBuN)2w(NHtBu)2

1991 ◽  
Vol 250 ◽  
Author(s):  
Hsin-Tien Chiu ◽  
Shiow-Huey Chuang
Keyword(s):  
Thin Films ◽  
Depth Profiling ◽  
Chemical Vapor ◽  
Lattice Parameter ◽  
Gas Chromatography Mass Spectrometry ◽  
Elemental Distribution ◽  
Tungsten Nitride ◽  
Wavelength Dispersive Spectroscopy ◽  
Glass Substrates ◽  
Pressure Chemical

AbstractThe possibility of growing tungsten nitride thin films from (tBuN)2W(NHtBu)2, a single-source molecular precursor with two nitrogen to tungsten double bonds, by low pressure chemical vapor deposition (LPCVD) was investigated. Deposition of thin films on silicon and glass substrates was carried out at temperatures 500 – 650 °C in a cold-wall reactor while the precursor was vaporized at 60 – 100 °C. Elemental composition of the thin films, studied by wavelength dispersive spectroscopy (WDS), is best described as WNx (x = 0.8 – 1.8). Elemental distribution within the films, studied by Auger depth profiling, is uniform. X-ray diffraction (XRD) studies show that the films have a cubic structure with a lattice parameter a = 4.14 – 4.18 Å. A stoichiometric WN thin film has a lattice parameter a equal to 4.154 Å. Volatile products, trapped at −196°C, were analyzed by nuclear magnetic resonance (NMR) and gas chromatography-mass spectrometry (GC-MS). Isobutylene, acetonitrile, hydrogen cyanide and ammonia were detected in the condensable mixtures.

Tungsten nitride thin films prepared by MOCVD

1993 ◽  
Vol 8 (6) ◽  
pp. 1353-1360 ◽  
Author(s):  
Hsin-Tien Chiu ◽  
Shiow-Huey Chuang
Keyword(s):  
Thin Films ◽  
Mass Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Lattice Parameter ◽  
Binding Energies ◽  
Organic Chemical ◽  
Elemental Distribution ◽  
Tungsten Nitride ◽  
Wavelength Dispersive Spectroscopy ◽  
X Ray

Polycrystalline tungsten nitride thin films were grown by low pressure metallo-organic chemical vapor deposition (MOCVD) using (tBuN)2W(NHtBu)2 as the single-source precursor. Deposition of uniform thin films on glass and silicon substrates was carried out at temperatures 723–923 K in a cold-wall reactor, while the precursor was vaporized at 333–363 K. The growth rates were 2–10 nm/min depending on the condition employed. Bulk elemental composition of the thin films, studied by wavelength dispersive spectroscopy (WDS), is best described as WNx (x = 0.7–1.8). The N/W ratio decreased with increasing temperature of deposition. X-ray diffraction (XRD) studies showed that the films have cubic structures with the lattice parameter a = 0.414–0.418 nm. The lattice parameter decreased with decreasing N/W ratio. Stoichiometric WN thin films showed an average lattice parameter a of 0.4154 nm. X-ray photoelectron spectroscopy (XPS) showed that binding energies of the W4f7/2, W4f5/2, and N1s electrons were 33.0, 35.0, and 397.3 eV, respectively. Elemental distribution within the films, studied by secondary ion mass spectroscopy (SIMS) and Auger spectroscopy depth profilings, was uniform. The SIMS depth profiling also indicated that C and O concentrations were low in the film. Volatile products trapped at 77 K were analyzed by gas chromatography–mass spectroscopy (GC–MS) and nuclear magnetic resonance (NMR). Isobutylene, acetonitrile, hydrogen cyanide, and ammonia were detected in the condensable mixtures. Possible reaction pathways were proposed to speculate the origin of these molecules.

Growth of Antimony Thin Films Using Perbenzylated Organometallic Precursors

1998 ◽  
Vol 547 ◽  
Author(s):  
Michael P. Remington ◽  
Smuruthi Kamepalli ◽  
Philip Boudjouk ◽  
Bryan R. Jarabek ◽  
Dean G. Grier ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Carbon ◽  
Design Strategies ◽  
Glass Substrates ◽  
Pressure Chemical ◽  
Organometallic Precursors

AbstractThe low temperature (ca. 300°C) deposition of antimony films by low-pressure chemical vapor deposition (LPCVD) on glass substrates from tribenzylantimony, Bn3Sb, is described. The facile elimination of the benzyl ligands results in preferentially oriented antimony films with low carbon content. The pyrolysis, decomposition mechanism and precursor design strategies are discussed. In addition, the deposition of bismuth from tribenzylbismuth, Bn3Bi, is presented. The potential for alloy growth using these precursors is discussed. Resulting films were characterized by XRD, SEM, and AFM.

Growth of ternary Si1−x-yGexCy thin films from a single-source precursor, Ge(SiMe3)4

1995 ◽  
Vol 10 (9) ◽  
pp. 2257-2259 ◽  
Author(s):  
Hsin-Tien Chiu ◽  
Ching-Shing Shie ◽  
Shiow-Huey Chuang
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Binding Energies ◽  
Photoelectron Spectra ◽  
Cubic Phase ◽  
Single Source ◽  
Wavelength Dispersive Spectroscopy ◽  
X Ray ◽  
Single Source Precursor ◽  
Pressure Chemical

Ge(SiMe3)4 was used as a single-source precursor to deposit thin films of alloys of germanium, silicon, and carbon, Si1−x-yGexCy, by low-pressure chemical vapor deposition on silicon substrates at temperatures 873-973 K. X-ray diffraction studies indicated that the films grown above 898 K were cubic phase (a = 0.441–0.442 nm). Infrared spectra of the films showed a major absorption near 783 cm−1. X-ray photoelectron spectra of a typical thin film showed binding energies of Ge3d, Si2p, and C1s electrons at 30.0, 100.6, and 283.2 eV, respectively. As determined by wavelength dispersive spectroscopy, x was 0.07–0.15 and y was 0.43–0.50, indicating that the films contained 7–15% Ge, 38–43% Si, and 43–50% C. At 973 K, the C/(Si + Ge) ratio was 1. Based on these data, the films deposited above 898 K have a structure of β-SiC with Ge atoms replacing some Si atoms in the lattice.

Effect of Introducing Free Gaseous Radicals of Trichlorosilane and Ammonia Precursors on Growth and Characteristics of LPCVD a-SiNx Ultra Thin Films

2013 ◽  
Vol 829 ◽  
pp. 401-409
Author(s):  
Armin Salmasi ◽  
Eskandar Keshavarz Alamdari
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Surface Topography ◽  
Depth Profiling ◽  
Chemical Vapor ◽  
Arrhenius Behavior ◽  
Force Microscopy ◽  
Atomic Force ◽  
Pressure Chemical ◽  
Rate Ratios

Preparation and characteristics of amorphous silicon nitride (a-SiNx) thin films deposited by low pressure chemical vapor deposition (LPCVD) are investigated. Free gaseous radicals of trichlorosilane (TCS) and ammonia (NH3) are produced by passing each of the precursor gases separately over Pt-Ir/Al2O3 catalyst at the temperature of 600 C. Kinetics studies of the LPCVD are carried out in different total pressures, NH3/TCS flow rate ratios and temperatures. Surface topography, chemical concentrations, growth rate and thickness are studied by Ellipsometry, x-ray photo-electron spectroscopy (XPS), atomic force microscopy (AFM) and auger depth profiling (ADP). Analysis of experiments indicates that at the temperatures between 730 C and 830 C, the growth rate of thin films follows an Arrhenius behavior with activation energy of 166.3 KJ.mol-1. The measured hydrogen contamination in a-SiNx ultra thin films is 1.05 at% which is 17 times lower than the corresponding contamination in the films produced by (PECVD) and 3.4 times lower than the contamination in the LPCVD thin films with silane (SiH4) or dichlorosilane (DCS) and Ammonia. The surface topography of the prepared films is smooth and uniform and the thickness varies between 23 and 101 nanometers.

A Novel Direct Liquid Injection Low Pressure Chemical Vapor Deposition System (DLI-LPCVD) for the Deposition of Thin Films

2017 ◽  
Vol 19 (8) ◽  
pp. 1700193 ◽  
Author(s):  
Mattias Vervaele ◽  
Bert De Roo ◽  
Jolien Debehets ◽  
Marilyne Sousa ◽  
Luman Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Liquid Injection ◽  
Pressure Chemical ◽  
Direct Liquid Injection

Microbridge Testing of Thin Films Under Small Deformation

1999 ◽  
Vol 594 ◽  
Author(s):  
T. Y. Zhang ◽  
Y. J. Su ◽  
C. F. Qian ◽  
M. H. Zhao ◽  
L. Q. Chen
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Silicon Nitride ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Chemical Vapor ◽  
Small Deformation ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Pressure Chemical

AbstractThe present work proposes a novel microbridge testing method to simultaneously evaluate the Young's modulus, residual stress of thin films under small deformation. Theoretic analysis and finite element calculation are conducted on microbridge deformation to provide a closed formula of deflection versus load, considering both substrate deformation and residual stress in the film. Silicon nitride films fabricated by low pressure chemical vapor deposition on silicon substrates are tested to demonstrate the proposed method. The results show that the Young's modulus and residual stress for the annealed silicon nitride film are respectively 202 GPa and 334.9 MPa.

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