Effect of Introducing Free Gaseous Radicals of Trichlorosilane and Ammonia Precursors on Growth and Characteristics of LPCVD a-SiNx Ultra Thin Films

2013 ◽  
Vol 829 ◽  
pp. 401-409
Author(s):  
Armin Salmasi ◽  
Eskandar Keshavarz Alamdari
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Surface Topography ◽  
Depth Profiling ◽  
Chemical Vapor ◽  
Arrhenius Behavior ◽  
Force Microscopy ◽  
Atomic Force ◽  
Pressure Chemical ◽  
Rate Ratios

Preparation and characteristics of amorphous silicon nitride (a-SiNx) thin films deposited by low pressure chemical vapor deposition (LPCVD) are investigated. Free gaseous radicals of trichlorosilane (TCS) and ammonia (NH3) are produced by passing each of the precursor gases separately over Pt-Ir/Al2O3 catalyst at the temperature of 600 C. Kinetics studies of the LPCVD are carried out in different total pressures, NH3/TCS flow rate ratios and temperatures. Surface topography, chemical concentrations, growth rate and thickness are studied by Ellipsometry, x-ray photo-electron spectroscopy (XPS), atomic force microscopy (AFM) and auger depth profiling (ADP). Analysis of experiments indicates that at the temperatures between 730 C and 830 C, the growth rate of thin films follows an Arrhenius behavior with activation energy of 166.3 KJ.mol-1. The measured hydrogen contamination in a-SiNx ultra thin films is 1.05 at% which is 17 times lower than the corresponding contamination in the films produced by (PECVD) and 3.4 times lower than the contamination in the LPCVD thin films with silane (SiH4) or dichlorosilane (DCS) and Ammonia. The surface topography of the prepared films is smooth and uniform and the thickness varies between 23 and 101 nanometers.

scholarly journals Influence of the growth parameters of TiO2 thin films deposited by the MOCVD method

Cerâmica ◽  
2002 ◽  
Vol 48 (305) ◽  
pp. 38-42 ◽  
Author(s):  
M. I. B. Bernardi ◽  
E. J. H. Lee ◽  
P. N. Lisboa-Filho ◽  
E. R. Leite ◽  
E. Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Parameters ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Parameters

The synthesis of TiO2 thin films was carried out by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during growth on the final structural characteristics was studied. A combination of the following experimental parameters was studied: temperature of the organometallic bath, deposition time, and temperature and substrate type. The high influence of those parameters on the final thin film microstructure was analyzed by scanning electron microscopy with electron dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction.

Low pressure chemical vapor deposition of B-N-C-H films from triethylamine borane complex

1995 ◽  
Vol 10 (2) ◽  
pp. 320-327 ◽  
Author(s):  
R.A. Levy ◽  
E. Mastromatteo ◽  
J.M. Grow ◽  
V. Paturi ◽  
W.P. Kuo ◽  
...  
Keyword(s):  
Activation Energy ◽  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Apparent Activation Energy ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Index Of Refraction ◽  
Arrhenius Behavior ◽  
Pressure Chemical

In this study, films consisting of B-N-C-H have been synthesized by low pressure chemical vapor deposition using the liquid precursor triethylamine borane complex (TEAB) both with and without ammonia. When no NH3 is present, the growth rate was observed to follow an Arrhenius behavior in the temperature range of 600 to 800 °C with an apparent activation energy of 11 kcal/mol. A linear dependence of growth rate is observed as a function of square root of flow rate for the TEAB range of 20 to 60 sccm, indicating that the reaction rate is controlled by the adsorption of borane. The addition of NH3 to TEAB had the effect of lowering the deposition temperature down to 300 °C and increasing the apparent activation energy to 22 kcal/mol. Above 650 °C, the carbon concentration of the deposits increased significantly, reflecting the breakup of the amine molecule. X-ray diffraction measurements indicated the films to be in all cases amorphous. Infrared spectra of the films showed absorption peaks representing the vibrational modes of B-N, B-N-B, B-H, and N-H. The index of refraction varied between 1.76 and 2.47, depending on composition of the films. Films deposited with no NH3 above 700 °C were seen to be compressive while films below that temperature were tensile. In the range of 350 to 475 °C, the addition of NH3 to TEAB resulted in films that were mildly tensile, while below 325 °C and above 550 °C, the films were found to be compressive. Both the hardness and Young's modulus of the films decreased with higher temperatures, reflecting the influence of the carbon presence.

Deposition of Tungsten Nitride thin Films from (tBuN)2w(NHtBu)2

1991 ◽  
Vol 250 ◽  
Author(s):  
Hsin-Tien Chiu ◽  
Shiow-Huey Chuang
Keyword(s):  
Thin Films ◽  
Depth Profiling ◽  
Chemical Vapor ◽  
Lattice Parameter ◽  
Gas Chromatography Mass Spectrometry ◽  
Elemental Distribution ◽  
Tungsten Nitride ◽  
Wavelength Dispersive Spectroscopy ◽  
Glass Substrates ◽  
Pressure Chemical

AbstractThe possibility of growing tungsten nitride thin films from (tBuN)2W(NHtBu)2, a single-source molecular precursor with two nitrogen to tungsten double bonds, by low pressure chemical vapor deposition (LPCVD) was investigated. Deposition of thin films on silicon and glass substrates was carried out at temperatures 500 – 650 °C in a cold-wall reactor while the precursor was vaporized at 60 – 100 °C. Elemental composition of the thin films, studied by wavelength dispersive spectroscopy (WDS), is best described as WNx (x = 0.8 – 1.8). Elemental distribution within the films, studied by Auger depth profiling, is uniform. X-ray diffraction (XRD) studies show that the films have a cubic structure with a lattice parameter a = 4.14 – 4.18 Å. A stoichiometric WN thin film has a lattice parameter a equal to 4.154 Å. Volatile products, trapped at −196°C, were analyzed by nuclear magnetic resonance (NMR) and gas chromatography-mass spectrometry (GC-MS). Isobutylene, acetonitrile, hydrogen cyanide and ammonia were detected in the condensable mixtures.

scholarly journals Effect of Nucleation Parameters of Ge Quantum Dots Grown over Silicon Oxide by LPCVD

2007 ◽  
Vol 2 (2) ◽  
pp. 81-84
Author(s):  
S. N. M. Mestanza ◽  
I. Doi ◽  
N. C. Frateschi
Keyword(s):  
Quantum Dots ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Force Microscopy ◽  
Nucleation Parameters ◽  
Atomic Force ◽  
Transmission Electron ◽  
Pressure Chemical ◽  
Mean Size ◽  
Germanium Quantum Dots

Germanium quantum dots (Ge-QD) were grown by Low Pressure Chemical Vapor Deposition (LPCVD) on Si nucleus previously grown on 3 nm thick SiO2 ultra thin film. Samples were analyzed by atomic force microscopy (AFM) and high resolution transmission electron microscopy (HRTEM). We report the analysis of the influence of the nucleation parameters on size and spatial distribution of Ge-QD. AFM images show a Ge-QD density of around 3.6x1010 cm-2, with an 11 nm mean size and 2.9 nm height. Finally, HRTEM investigation shows that the Ge-QD have a crystalline structure, i.e., they are nanocrystals.

scholarly journals Influence of the growth parameters on TiO2 thin films deposited using the MOCVD method

Cerâmica ◽  
2002 ◽  
Vol 48 (308) ◽  
pp. 192-198 ◽  
Author(s):  
M. I. B. Bernardi ◽  
E. J. H. Lee ◽  
P. N. Lisboa-Filho ◽  
E. R. Leite ◽  
E. Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Parameters ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Parameters ◽  
Different Temperatures

In this work we report the synthesis of TiO2 thin films by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during the growth in the obtained structural characteristics was studied. Different temperatures of the organometallic bath, deposition time, temperature and type of the substrate were combined. Using Scanning Electron Microscopy associated to Electron Dispersive X-Ray Spectroscopy, Atomic Force Microscopy and X-ray Diffraction, the strong influence of these parameters in the thin films final microstructure was verified.

Ni Removal from Si Wafers by Low-Pressure UV-Chlorine Cleaning

1997 ◽  
Vol 477 ◽  
Author(s):  
C. H. Courtney ◽  
H. H. Lamb
Keyword(s):  
Physical Vapor Deposition ◽  
Depth Profiling ◽  
Chemical Vapor ◽  
Surface Concentration ◽  
Low Pressure ◽  
Force Microscopy ◽  
Etching Mechanism ◽  
Photochemical Etching ◽  
Atomic Force ◽  
Substrate Temperatures

ABSTRACTNi removal from Si wafers by low-pressure UV/Cl2 chemical vapor cleaning (CVC) was investigated at substrate temperatures of 150–200°C. Sub-monolayer Ni coverages were applied to Si(100) by ultrahigh-vacuum physical vapor deposition (UHV-PVD). The Ni surface concentration was reduced to the Auger electron spectroscopy (AES) detection limit by a 2-min UV/Cl2 exposure at 300 mTorr and 200°C. AES depth profiling revealed that Ni was not contained within nor buried beneath the chlorosilyl layer formed by UV/Cl2 CVC. In contrast, Ni was not removed under similar conditions from Si surfaces covered by a thin UV/air oxide layer. These results indicate that Ni removal from Si occurs by a photochemical etching mechanism and not by direct volatilization of NiCl2. Atomic force microscopy (AFM) of Si surfaces after UV/Cl2 CVC indicated that Si etching was limited ˜20 å and that the surface was smooth (RMS roughness = 1.6 å).

Growth and Characterization of Organic Polymeric Thin Films From Isopropanol by PECVD.

2009 ◽  
Vol 1242 ◽  
Author(s):  
J. O. Martínez-Gutiérrez ◽  
G. Romero-Paredes ◽  
R. Peña-Sierra ◽  
A. Ávila-García ◽  
G. Juárez-Díaz
Keyword(s):  
Thin Films ◽  
Visible Region ◽  
Chemical Vapor ◽  
Ammonium Hydroxide ◽  
Organic Thin Films ◽  
Optical Bandgap ◽  
Polymeric Thin Films ◽  
Force Microscopy ◽  
Atomic Force

ABSTRACTPolymerized organic thin films were synthesized on a variety of substrates by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique using isopropanol as precursor. Hydrogen peroxide, ammonium hydroxide, and iodine dissolved in isopropanol were used as dopants and chlorobenzene as copolymerization precursor. The structural, optical and electrical properties of the films were studied as functions of the dopant type and concentration.The polymeric films were characterized by variable angle ellipsometry (VAE), atomic force microscopy (AFM), Fourier Transform Infrared spectroscopy (FTIR), ultraviolet-visible transmission spectroscopy and photoluminescence. The electrical film behavior was explored by the four points probe method.The growth rate, refractive index, optical bandgap, chemical structure and resistivity of the films strongly depend on the concentration and type of dopant added. The AFM microphotographs showed smooth surfaces with RMS roughness less than 10 nm. The optical bandgap values of the films were in the range of 2.6 to 3.26 eV, the resistivity was in the order of 103 – 104 ohm-cm. The photoluminescence response of the polymerized films was obtained in the visible region, by exciting with a UV laser.

scholarly journals Diamond Films for Implantable Electrodes

10.14311/1638 ◽  
2012 ◽  
Vol 52 (5) ◽  
Author(s):  
Petra Henychová ◽  
Klára Hiřmanová ◽  
Martin Vraný
Keyword(s):  
Growth Rate ◽  
Surface Morphology ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Diamond Growth ◽  
Force Microscopy ◽  
Atomic Force ◽  
Boron Doped ◽  
Implantable Electrodes ◽  
Average Size

Diamond is a promising material for implantable electrodes due to its unique properties. The aim of this work is to investigate the growth of boron-doped nanocrystalline diamond (B-NCD) films by plasma-enhanced microwave chemical vapor deposition at various temperatures, and to propose optimal diamond growth conditions for implantable electrodes. We have investigated the temperature dependence (450 °C–820 °C) of boron incorporation, surface morphology and growth rate on a polished quartz plate. Surface morphology and thickness were examined by atomic force microscopy (AFM).The quality of the films in terms of diamond and non-diamond phase of carbon was investigated by Raman spectroscopy. AFM imaging showed that the size of the grains was determined mainly by the thickness of the films, and varied from an average size of 40 nm in the lowest temperature sample to an average size of 150 nm in the sample prepared at the highest temperature. The surface roughness of the measured samples varied between 10 (495 °C) and 25 nm (800 °C). The growth rate of the sample increased with temperature. We found that the level of boron doping was strongly dependent on temperature during deposition. An optimal B-NCD sample was prepared at 595 °C.

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