Formation of Oxide Layers by High Dose Implantation into Silicon

1983 ◽  
Vol 27 ◽  
Author(s):  
S.S. Gill ◽  
I. H. Wilson
Keyword(s):  
Oxide Layer ◽  
Single Crystal Silicon ◽  
High Dose ◽  
Surface Oxide Layer ◽  
Crystal Silicon ◽  
Implantation Energy ◽  
Oxygen Ions ◽  
Oxygen Profile ◽  
Dose Levels ◽  
Very High

ABSTRACTSingle crystal silicon was implanted with 80, 120, 160 and 240 keV oxygen ions. Rutherford backscattering (RBS) analysis was used to obtain the implanted oxygen profile and the oxygen to silicon ratio in the implanted layer for doses in the range 1016 to 1.5 × 1018 O2+ cm−2 for room temperature implants. The depth and the thickness of the buried oxide layer has been measured as a function of implantation energy and oxygen dose. Chemical formation of stoichiometric SiO2 was confirmed by infra-red (IR) spectroscopy. Both RBS and IR indicate that once a surface oxide layer is formed for very high dose levels, the layer thickness decreases with increasing implanted dose beyond a critical dose level.

XTEM analysis of buried layer structure of silicon-on-insulator materials

1990 ◽  
Vol 48 (4) ◽  
pp. 666-668
Author(s):  
Ni Rushan ◽  
Lin Chenglu
Keyword(s):  
Silicon Nitride ◽  
Single Crystal ◽  
Oxide Layer ◽  
Silicon Oxide ◽  
Single Crystal Silicon ◽  
Silicon On Insulator ◽  
High Dose ◽  
Main Concern ◽  
Crystal Silicon ◽  
Silicon Oxide Layer

It Is well known that a buried silicon nitride or silicon oxide layer in silicon can be formed by high dose >150 KeV nitrogen or oxygen implantation into single crystal silicon followed by high temperature annealing. This is one of the techniques to produce silicon-on-insulator (SOI) structures which is promising for a variety of potential application in VLSI, high-voltage devices, high density CMOS circuits and possibly 3-dimensional integration, etc. The main concern is how to produce a buried dielective layer with good insulating properties and with a high quality single crystal silicon overlayer on it.In this paper the microstructures of buriea silicon nitride and silicon oxide layer of the SOI materials formed by N+ or O+ implantation in single-crystal silicon are studied oy means of cross-sectional transmission electron microscopy (XTEM) and infrared (IR) absorption measurements.

Progress and Study of Measurement of Surface Oxide Layer on Single Crystal Silicon Sphere

2014 ◽  
Vol 51 (3) ◽  
pp. 030007
Author(s):  
刘文德 Liu Wende ◽  
陈赤 Chen Chi ◽  
罗志勇 Luo Zhiyong ◽  
樊其明 Fan Qiming ◽  
刘玉龙 Liu Yulong
Keyword(s):  
Single Crystal ◽  
Oxide Layer ◽  
Single Crystal Silicon ◽  
Surface Oxide ◽  
Surface Oxide Layer ◽  
Crystal Silicon

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

Non Destructive Determination of the Threading Dislocation Density of Smooth Simox Substrates using Atomic Force Microscopy

2000 ◽  
Vol 6 (S2) ◽  
pp. 1088-1089
Author(s):  
A. Domenicucci ◽  
R. Murphy ◽  
D. Sadanna ◽  
S. Klepeis
Keyword(s):  
Atomic Force Microscopy ◽  
High Temperature ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
High Dose ◽  
Threading Dislocation ◽  
Crystal Silicon ◽  
Force Microscopy ◽  
Atomic Force ◽  
High Temperature Anneal

Atomic force microscopy (AFM) has been used extensively in recent years to study the topographic nature of surfaces in the nanometer range. Its high resolution and ability to be automated have made it an indispensable tool in semiconductor fabrication. Traditionally, AFM has been used to monitor the surface roughness of substrates fabricated by separation by implanted oxygen (SIMOX) processes. It was during such monitoring that a novel use of AFM was uncovered.A SIMOX process requires two basic steps - a high dose oxygen ion implantation (1017 to 1018 cm-3) followed by a high temperature anneal (>1200°C). The result of these processes is to form a buried oxide layer which isolates a top single crystal silicon layer from the underlying substrate. Pairs of threading dislocations can form in the top silicon layer during the high temperature anneal as a result of damage caused during the high dose oxygen implant.

scholarly journals Fracture behavior of single crystal silicon with thermal oxide layer

2016 ◽  
Vol 163 ◽  
pp. 523-532 ◽  
Author(s):  
Toshiyuki Tsuchiya ◽  
Kenji Miyamoto ◽  
Koji Sugano ◽  
Osamu Tabata
Keyword(s):  
Single Crystal ◽  
Oxide Layer ◽  
Fracture Behavior ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Thermal Oxide

Supersaturated P-Type Polycrystaline Films Produced by Rapid Thermal Annealing of High Dose Boron Ion Implants for Interconnects and Shallow Junction Diffusion Sources

1990 ◽  
Vol 182 ◽  
Author(s):  
B. Raicu ◽  
M.I. Current ◽  
W.A. Keenan ◽  
D. Mordo ◽  
R. Brennan ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Thermal Annealing ◽  
Cross Section ◽  
Rapid Thermal Annealing ◽  
Single Crystal Silicon ◽  
High Dose ◽  
Crystal Silicon ◽  
Polysilicon Films ◽  
P Type

AbstractHighly conductive p+-polysilicon films were fabricated over Si(100) and SiO2 surfaces using high-dose ion implantation and rapid thermal annealing. Resistivities close to that of single crystal silicon were achieved. These films were characterized by a variety of electrical and optical techniques as well as SIMS and cross-section TEM.

Fabrication of Smooth Surface on 4H-SiC Substrate by Ultraviolet Assisted Local Polishing in Hydrogen Peroxide Solution

2012 ◽  
Vol 523-524 ◽  
pp. 24-28 ◽  
Author(s):  
Akihisa Kubota ◽  
Kazuya Kurihara ◽  
Mutsumi Touge
Keyword(s):  
Hydrogen Peroxide ◽  
Oxide Layer ◽  
Uv Irradiation ◽  
Process Parameters ◽  
Removal Rate ◽  
Single Crystal Silicon ◽  
Interference Microscopy ◽  
Process Time ◽  
Crystal Silicon ◽  
Synthetic Quartz

In this study, we investigated the possibility of removing and smoothing a single-crystal silicon carbide (SiC) surface under ultraviolet (UV) irradiation in hydrogen peroxide (H2O2) solution. In this method, a SiC substrate was excited by UV irradiation that transmitted synthetic quartz, and then an oxide layer on the SiC substrate was formed by photochemical reaction. Simultaneously, hydroxyl radical (OH*) was generated by the decomposition of H2O2 solution by UV irradiation. OH* plays an important role of oxidation of SiC surface. With these chemical reactions, oxide layer was effectively formed on the SiC surface. Finally, the oxide layer generated on a SiC substrate was chemically and/or mechanically removed by synthetic quartz and solutions. The polishing characteristics of this method were investigated by controlling the process parameters. Additionally, surface quality and removal depth were measured and evaluated by a phase-shift interference microscopy. Obtained results show that the surface morphology and the removal rate are strongly dependent on the existence of the UV irradiation. Moreover, it is shown that the removal characteristics of the SiC substrate depend on the process parameters such as the process time, reciprocating speed, and contact load. The processed surface has revealed that many scratches on the preprocessed surface was completely removed. The microroughness of the processed surface was improved to 0.15 nm (Rms) and 1.62 nm (p-v), respectively. These results provide useful information for obtaining an atomically smooth SiC surface.

HOMOLOGOUS RADIOIMMUNOASSAY FOR CANINE PROLACTIN AND ITS APPLICATION IN VARIOUS PHYSIOLOGICAL STATES

1977 ◽  
Vol 75 (1) ◽  
pp. 93-103 ◽  
Author(s):  
K.-J. GRÄF ◽  
E. FRIEDREICH ◽  
S. MATTHES ◽  
S. H. HASAN
Keyword(s):  
Late Pregnancy ◽  
Significant Inhibition ◽  
Serum Prolactin ◽  
Normal Male ◽  
High Dose ◽  
Normal Female ◽  
Serum Progesterone ◽  
Basal Serum ◽  
Dose Levels ◽  
Very High

The purification of canine prolactin and the development of an homologous radioimmunoassay including several physiological studies in the Beagle dog are described. The assay measured immunoreactive canine prolactin with a sensitivity limit of 0·6 ng/ml. Purified canine luteinizing hormone gave no significant inhibition in the assay whereas purified canine growth hormone inhibited the binding of 125I-labelled canine prolactin to antiserum only at very high dose levels. In Beagle dogs, basal serum prolactin concentrations were in the range 1–2 ng/ml in normal male, normal female (metoestrus and anoestrus) and oophorectomized–hysterectomized female dogs. The prolactin concentration in one sample of amniotic fluid was in the same range, while in hypophysectomized male dogs no serum prolactin could be detected by our assay system. Serum prolactin concentrations tended to increase during late pregnancy and parturition, remaining high during the first 9 days of lactation. In consequence, a negative correlation was suggested between serum prolactin and serum progesterone concentrations.

High Dose Rate Oxygen Implantation for Formation of Silicon-on-Insulator Structures

1990 ◽  
Vol 201 ◽  
Author(s):  
E. Cortesi ◽  
F. Namavar ◽  
R. F. Pinizzotto ◽  
H. Yang
Keyword(s):  
Dose Rate ◽  
Silicon Surface ◽  
High Dose Rate ◽  
Silicon On Insulator ◽  
High Dose ◽  
Surface Oxide Layer ◽  
Dose Rates ◽  
Pit Formation ◽  
Lower Dose Rate ◽  
Very High

AbstractWe have studied Separation by IMplantation of OXygen (SIMOX) processes using very high dose rates (40–60 μA/cm2). For a dose of 4 × 1017 O+/cm2 at 160 keV, the structure formed by implantation at 50 μA/cm2 is very similar to that associated with lower dose rates. The same dose implanted at a dose rate of 60 μA/cm2, however, results in the formation of pits in the silicon surface as well as a somewhat different oxide structure. Implantation through a surface oxide layer appears to result in a structure similar to that associated with lower dose rate implantation. These and higher dose samples suggest that the threshold for pit formation is related to both dose rate and dose.

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