Carrier Confinement Effects in Epitaxial Silicon Quantum Wells Prepared by MOCVD

ABSTRACTSilicon multiquantum wells ranging in width from 3 to 15 nm were deposited on closely lattice-matched ZnS barriers. MOCVD was used to deposit the ZnS films using diethyl zinc and hydrogen sulfide as the precursors; disilane was used to deposit silicon layers at low temperatures. Single and multiple silicon nano-layers were observed by transmission electron microscopy and secondary ion mass spectrometry. Photoluminesence studies revealed emissions peaks which were blue-shifted with respect to the edge emission from bulk silicon substrates. The observation of emission from silicon nanostructures shifted to wavelengths as short as the 800-850 nm range is consistent with the effects of quantum confinement in silicon nanostructures.

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Strain-Induced Diffusion in Heteroepitaxially Grown CuInSe2 on GaAs Substrates

MRS Proceedings ◽

10.1557/proc-399-549 ◽

1995 ◽

Vol 399 ◽

Cited By ~ 3

Author(s):

P. Fons ◽

S. Niki ◽

A. Yamada ◽

A. Okada ◽

D.J. Tweet

Keyword(s):

Thin Film ◽

Secondary Ion Mass Spectrometry ◽

Second Phase ◽

X Ray Diffraction ◽

X Ray ◽

State Of Stress ◽

Gaas Substrates ◽

Transmission Electron ◽

Secondary Ion ◽

Lattice Matched

ABSTRACTA series of CuInSe2 thin films of varying thicknesses were grown on both GaAs(001) substrates and nominally lattice-matched In0.29Ga0.71As (001) linearly graded buffers by MBE at 450°C. Transmission electron microscopy and high resolution x-ray diffraction measurements revealed the presence of a second phase with chalcopyrite symmetry strained to the CuInSe2 thin film in-plane lattice constant for CuInSe2 films grown on GaAs substrates. Further examination confirmed that the second phase possessed chalcopyrite symmetry. No second phase was observed in films grown on nearly lattice-matched In0.29Ga0.71As (001) linearly graded buffers. Secondary ion mass spectrometry confirmed the presence of interdiffusion from of Ga from the substrate into the CuInSe2layer. It is speculated that this diffusion is related to the state of stress due to heteroepitaxial misfit.

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Epitaxial Silicon-Carbon Alloy Growth by Laser Induced Melting and Solidification

MRS Proceedings ◽

10.1557/proc-398-127 ◽

1995 ◽

Vol 398 ◽

Cited By ~ 1

Author(s):

Kenneth M. Kramer ◽

Michael O. Thompson

Keyword(s):

Single Crystal ◽

Secondary Ion Mass Spectrometry ◽

Single Crystal Silicon ◽

Epitaxial Silicon ◽

X Ray Diffraction ◽

Crystal Silicon ◽

Silicon Carbon ◽

Transmission Electron ◽

Excimer Laser Irradiation ◽

Secondary Ion

ABSTRACTIon implantation of carbon into single-crystal silicon followed by excimer laser irradiation was used to create supersaturated, epitaxial SixC1-x. films. Crystallization proceeded from the underlying single-crystal silicon through the carbon containing layers at velocities of approximately 5 m/s. Characterization by high-resolution x-ray diffraction and Fourier-transform infrared absorption indicate that the carbon is found predominantly on substi-tutional lattice sites for concentrations up to 1.4 at.% C. Secondary-ion mass spectrometry profiles and numerical mass transfer calculations were used to estimate the diffusion coefficient of carbon in the liquid as 2-3 × 10−4cm2/s with a segregation coefficient greater than 0.4. Unusual diffusion behavior was observed for the carbon at 1.4 at.% C. At higher concentrations, evidence of SiC precipitates was observed in transmission electron microscope images and FTIR absorption spectra.

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Microstructure and Electrical Properties of Zinc Films on InP

MRS Proceedings ◽

10.1557/proc-403-465 ◽

1995 ◽

Vol 403 ◽

Author(s):

E. Kamiinska ◽

A. Piotrowska ◽

A. Barcz ◽

S. Kasjaniuk ◽

E. Mizera ◽

...

Keyword(s):

Electron Microscopy ◽

Heat Treatment ◽

Secondary Ion Mass Spectrometry ◽

Native Oxide ◽

X Ray Diffraction ◽

X Ray ◽

Transmission Electron ◽

Secondary Ion ◽

Lattice Matched ◽

Inp Surface

AbstractThe interactions between thin films of Zn and (100)InP were analysed with secondary ion mass spectrometry, X-ray diffraction and transmission electron microscopy. Zn was found to penetrate the native oxide on InP surface during deposition, and to form an ohmic contact when deposited on n-type InP. Under heat treatment Zn protrudes into InP, and beneath Zn/InP interface a tetragonal Zn3P2 phase lattice matched to InP grows.

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Effects of Concurrent Co or Ti Silicidation on Transient Diffusion and End-of-Range Damage in Phosphorus Implanted Silicon

MRS Proceedings ◽

10.1557/proc-262-701 ◽

1992 ◽

Vol 262 ◽

Cited By ~ 1

Author(s):

J.W. Honeycutt ◽

J. Ravi ◽

G. A. Rozgonyi

Keyword(s):

Secondary Ion Mass Spectrometry ◽

Complete Removal ◽

Dislocation Loops ◽

Enhanced Diffusion ◽

Depth Profiles ◽

Enhanced Dissolution ◽

Implantation Damage ◽

Transmission Electron ◽

Defect Behavior ◽

Secondary Ion

ABSTRACTThe effects of Ti and Co silicidation on P+ ion implantation damage in Si have been investigated. After silicidation of unannealed 40 keV, 2×1015 cm-2 P+ implanted junctions by rapid thermal annealing at 900°C for 10–300 seconds, secondary ion mass spectrometry depth profiles of phosphorus in suicided and non-silicided junctions were compared. While non-silicided and TiSi2 suicided junctions exhibited equal amounts of transient enhanced diffusion behavior, the junction depths under COSi2 were significantly shallower. End-of-range interstitial dislocation loops in the same suicided and non-silicided junctions were studied by planview transmission electron microscopy. The loops were found to be stable after 900°C, 5 minute annealing in non-silicided material, and their formation was only slightly effected by TiSi2 or COSi2 silicidation. However, enhanced dissolution of the loops was observed under both TiSi2 and COSi2, with essentially complete removal of the defects under COSi2 after 5 minutes at 900°C. The observed diffusion and defect behavior strongly suggest that implantation damage induced excess interstitial concentrations are significantly reduced by the formation and presence of COSi2, and to a lesser extent by TiSi2. The observed time-dependent defect removal under the suicide films suggests that vacancy injection and/or interstitial absorption by the suicide film continues long after the suicide chemical reaction is complete.

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Oxygen Precipitation Along Individual Ion Tracks During High Dose O+ Implantation into Silicon

MRS Proceedings ◽

10.1557/proc-93-143 ◽

1987 ◽

Vol 93 ◽

Cited By ~ 7

Author(s):

Witold P. Maszara

Keyword(s):

Silicon Layer ◽

High Dose ◽

Regular Array ◽

Ion Tracks ◽

Oxygen Precipitation ◽

Transmission Electron ◽

Oxygen Gas ◽

Kinetics Of ◽

Secondary Ion ◽

Lattice Matched

ABSTRACTSilicon wafers with and without protective1Ahermil oxide were implanted with oxygen at 150keV with doses 1.6 – 2.0×1018 cm−2. Transmission electron microscopy (TEM) and secondary ion mass spectroscopy (SIMS) were used to study the top silicon layer remaining above the implanted buried oxide. regular array of spheroidal voids filled with oxygen gas was observed only in the samples that were not protected by the oxide. The voids were aligned into individual columns whose crystallographic orientation with respect to the host silicon lattice matched the direction of the implantation. The origin and the kinetics of their formation are discussed.

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In Situ Correlative Microscopy Combining Transmission Electron Microscopy and Secondary Ion Mass Spectrometry

Microscopy and Microanalysis ◽

10.1017/s1431927618002398 ◽

2018 ◽

Vol 24 (S1) ◽

pp. 380-381 ◽

Cited By ~ 1

Author(s):

Santhana Eswara ◽

Lluis Yedra ◽

Alisa Pshenova ◽

Varun Sarbada ◽

Jean-Nicolas Audinot ◽

...

Keyword(s):

Electron Microscopy ◽

Mass Spectrometry ◽

Transmission Electron Microscopy ◽

Secondary Ion Mass Spectrometry ◽

Correlative Microscopy ◽

Transmission Electron ◽

Ion Mass Spectrometry ◽

Secondary Ion

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Optimization of growth of InGaAs/InP quantum wells using photoluminescence and secondary ion mass spectrometry

Bulletin of Materials Science ◽

10.1007/bf02719911 ◽

2000 ◽

Vol 23 (3) ◽

pp. 207-209

Author(s):

S. Bhunia ◽

P. Banerji ◽

T. K. Chaudhuri ◽

A. R. Haldar ◽

D. N. Bose ◽

...

Keyword(s):

Mass Spectrometry ◽

Quantum Wells ◽

Secondary Ion Mass Spectrometry ◽

Ion Mass Spectrometry ◽

Secondary Ion

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Изменение структуры и свойств приповерхностного слоя Si, имплантированного Zn, в зависимости от флюенса облучения ионами -=SUP=-132-=/SUP=-Xe-=SUP=-26+-=/SUP=- с энергией 167 МэВ

Физика и техника полупроводников ◽

10.21883/ftp.2019.03.47284.8979 ◽

2019 ◽

Vol 53 (3) ◽

pp. 332

Author(s):

В.В. Привезенцев ◽

В.С. Куликаускас ◽

В.А. Скуратов ◽

О.С. Зилова ◽

А.А. Бурмистров ◽

...

Keyword(s):

Electron Microscopy ◽

Zinc Oxide ◽

Cross Section ◽

Secondary Ion Mass Spectrometry ◽

Sample Surface ◽

Transmission Electron ◽

Oxide Phases ◽

Secondary Ion ◽

Surface Pores ◽

Scanning Electron

AbstractSingle-crystal n -Si(100) wafers are implanted with ^64Zn^+ ions with an energy of 50 keV and dose of 5 × 10^16 cm^–2. Then the samples are irradiated with ^132Xe^26+ ions with an energy of 167 MeV in the range of fluences from 1 × 10^12 to 5 × 10^14 cm^–2. The surface and cross section of the samples are visualized by scanning electron microscopy and transmission electron microscopy. The distribution of implanted Zn atoms is studied by time-of-flight secondary-ion mass spectrometry. After irradiation with Xe, surface pores and clusters consisting of a Zn–ZnO mixture are observed at the sample surface. In the amorphized subsurface Si layer, zinc and zinc-oxide phases are detected. After irradiation with Xe with a fluence of 5 × 10^14 cm^–2, no zinc or zinc-oxide clusters are detected in the samples by the methods used in the study.

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Determination of the Distribution of Ion Implantation Boron in Silicon

MRS Proceedings ◽

10.1557/proc-650-r9.3/o14.3 ◽

2000 ◽

Vol 650 ◽

Author(s):

Te-Sheng Wang ◽

A.G. Cullis ◽

E.J.H. Collart ◽

A.J. Murrell ◽

M.A. Foad

Keyword(s):

Electron Microscopy ◽

Secondary Ion Mass Spectrometry ◽

Low Energy ◽

Concentration Profiles ◽

Impurity Profile ◽

Transmission Electron ◽

Device Applications ◽

P Type ◽

Secondary Ion

ABSTRACTBoron is the most important p-type dopant in Si and it is essential that, especially for low energy implantation, both as-implanted B distributions and those produced by annealing should be characterized in very great detail to obtain the required process control for advanced device applications. While secondary ion mass spectrometry (SIMS) is ordinarily employed for this purpose, in the present studies implant concentration profiles have been determined by direct B imaging with approximately nanometer depth and lateral resolution using energy-filtered imaging in the transmission electron microscopy. The as-implanted B impurity profile is correlated with theoretical expectations: differences with respect to the results of SIMS measurements are discussed. Changes in the B distribution and clustering that occur after annealing of the implanted layers are also described.

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