Properties of Zn Implanted GaN

1995 ◽  
Vol 395 ◽  
Author(s):  
S. Strite ◽  
P. W. Epperlein ◽  
A. Dommann ◽  
A. Rockett ◽  
R. F. Broom
Keyword(s):  
Room Temperature ◽  
Optical Quality ◽  
N Loss ◽  
X Ray ◽  
Implantation Damage ◽  
Transmission Electron ◽  
Optical Activation ◽  
Low Efficiency ◽  
Secondary Ion

ABSTRACTWe report the optical and structural properties of ion implanted GaN:Zn. Post-implant annealing up to 1100 °C was performed under flowing N2 in both a tube furnace and a rapid thermal annealing (RTA) system, with and without SiNx encapsulation layers. The implantation damage is quantified by transmission electron microscopy (TEM). Secondary ion mass spectroscopy (SIMS) detects significant rearrangement of implanted Zn only at the highest temperatures and doses investigated. Strain reduction, observed in GaN:Zn annealed at or above 975 °C by high-resolution x-ray diffractometry (HRXRD), indicates successful damage removal. The optical activation of annealed GaN:Zn is measured by photoluminescence (PL). The room temperature (RT) Zn acceptor transition at ∼430 nm is consistently observed in annealed GaN:Zn, but at low efficiency. We conclude that residual implantation damage and/or N loss during annealing limits the optical quality of implanted GaN:Zn.

Structural and Optical Property Investigations on Mg-Alloying in Epitaxial Zinc Oxide Films on Sapphire

1999 ◽  
Vol 595 ◽  
Author(s):  
A.K. Sharma ◽  
C. Jin ◽  
A. Kvit ◽  
J. Narayan ◽  
J.F. Muth ◽  
...  
Keyword(s):  
Single Crystal ◽  
Room Temperature ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Channeling ◽  
Zinc Oxide Films ◽  
Transmission Electron ◽  
Potential Applications ◽  
Post Deposition

AbstractWe have synthesized single-crystal epitaxial MgZnO films by pulsed-laser deposition. High-resolution transmission electron microscopy, X-ray diffraction and Rutherford backscattering spectroscopy/ion channeling were used to characterize the microstructure, defect content, composition and epitaxial single-crystal quality of the films. In these films with up to ∼ 34 atomic percent Mg incorporation, an intense ultraviolet band edge photoluminescence at room temperature and 77 K was observed. The highly efficient photoluminescence is indicative of the excitonic nature of the material. Transmission spectroscopy revealed that the excitonic structure of the alloys was clearly visible at room temperature. Post-deposition annealing in oxygen reduced the number of defects and improved the optical properties of the films. The potential applications of MgZnO alloys in a variety of optoelectronic devices are discussed.

scholarly journals Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N2 overpressure

1997 ◽  
Vol 2 ◽  
Author(s):  
A. Pelzmann ◽  
S. Strite ◽  
A. Dommann ◽  
C. Kirchner ◽  
Markus Kamp ◽  
...  
Keyword(s):  
Optical Quality ◽  
X Ray Diffraction ◽  
High Optical Quality ◽  
X Ray ◽  
Mocvd Reactor ◽  
Defect Annealing ◽  
Optical Activation ◽  
Gan Crystal ◽  
Ion Implanted

We investigated the properties of ion-implanted GaN:Zn annealed under various conditions using photoluminescence (PL) and high resolution x-ray diffraction (HRXRD). Epitaxial GaN/sapphire of high optical quality was ion-implanted with a 1013 cm−2 dose of Zn+ ions at 200 keV. The sample was capped with 200 Å of SiNx and then diced into numerous pieces which were annealed under varied conditions in an attempt to optically activate the Zn. Annealing was performed in a tube furnace under flowing N2, an atmospheric pressure MOCVD reactor under flowing NH3 or N2, and under an N2 overpressure of 190 atm. The observed improvement in the optical quality of GaN:Zn annealed under N2 overpressure yields further insights into the trade-off between defect annealing and N loss from the GaN crystal.

Crystal structure, dielectric, piezoelectric and elastic properties of (±)-tris(ethylenediamine)cobalt(III) nitrate, (±)–[Co(H2N(CH2)2NH2)3](NO3)3

1998 ◽  
Vol 213 (3) ◽  
Author(s):  
S. Haussühl ◽  
J. Schreuer
Keyword(s):  
Crystal Structure ◽  
Thermal Expansion ◽  
Single Crystals ◽  
Elastic Properties ◽  
Structure Analysis ◽  
Elastic Constants ◽  
Room Temperature ◽  
Optical Quality ◽  
X Ray

AbstractLarge single crystals of optical quality of (±)-tris(ethylenediamine)cobalt(III) nitrate have been grown from aequeous solutions. An X-ray structure analysis yielded space groupPyroelectric, dieletric, piezoelectric and elastic constants have been determined at room temperature. Additionally, we have studied the coefficients of thermal expansion and the thermoelastic constants in the range between 270 K and 350 K. The structure exhibits a nearly trigonal symmetry around the [unk]

Helium Implantation Damage in SiC

2005 ◽  
Vol 108-109 ◽  
pp. 709-712
Author(s):  
Stephanie Leclerc ◽  
Marie France Beaufort ◽  
Valerie Audurier ◽  
Alain Déclemy ◽  
Jean François Barbot
Keyword(s):  
Electron Microscopy ◽  
Mechanical Properties ◽  
Transmission Electron Microscopy ◽  
Room Temperature ◽  
X Ray Diffraction ◽  
Helium Ions ◽  
X Ray ◽  
Implantation Damage ◽  
Transmission Electron ◽  
Helium Implantation

Single crystals SiC were implanted with 50 keV helium ions at room temperature and fluences in the range 1x1016 -1x1017 cm-2. The helium implantation induced swelling was studied through the measurement of the step height. The damage was studied by using X-ray diffraction measurements and the transmission electron microscopy observations. Degradation of mechanical properties is found after helium implantation.

scholarly journals Исследования поперечного среза и фотолюминесценции слоя GaAs, выращенного на подложке Si/Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-

2019 ◽  
Vol 53 (9) ◽  
pp. 1271
Author(s):  
А.А. Сушков ◽  
Д.А. Павлов ◽  
В.Г. Шенгуров ◽  
C.А. Денисов ◽  
В.Ю. Чалков ◽  
...  
Keyword(s):  
Gaas Layer ◽  
Optical Quality ◽  
Buffer Layers ◽  
Structural Studies ◽  
Hot Wire ◽  
X Ray ◽  
Organic Vapor ◽  
Transmission Electron ◽  
Metal Organic

AbstractA GaAs/AlAs/GaAs/AlAs/Ge heterostructure grown on a Si/Al_2O_3(1 $$\bar {1}$$ 02) substrate is formed and studied. The Ge buffer layer is produced by the “hot wire” technique, whereas the III–V layers are grown by metal–organic vapor-phase epitaxy. The optical quality of the III–V layers is determined by photoluminescence spectroscopy. Structural studies are performed by high-resolution transmission electron microscopy. The elemental composition is determined by energy-dispersive X-ray spectroscopy. In the study, the possibility of growing a single-crystal GaAs layer on a Si/Al_2O_3 substrate through AlAs/GaAs/AlAs/Ge buffer layers is shown.

Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 215
Author(s):  
Rajeev R. Kosireddy ◽  
Stephen T. Schaefer ◽  
Marko S. Milosavljevic ◽  
Shane R. Johnson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Interface Quality ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Lateral Variations

Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The InAsSbBi layers are 210 nm thick, coherently strained, and show no observable defects. The substrate offcut is not observed to influence the structural and interface quality of the samples. Each sample exhibits small lateral variations in the Bi mole fraction, with the largest variation observed in the on-axis growth. Bismuth rich surface droplet features are observed on all samples. The surface droplets are isotropic on the on-axis sample and elongated along the [011¯] step edges on the 1° and 4° offcut samples. No significant change in optical quality with offcut angle is observed.

Effects of Concurrent Co or Ti Silicidation on Transient Diffusion and End-of-Range Damage in Phosphorus Implanted Silicon

1992 ◽  
Vol 262 ◽  
Author(s):  
J.W. Honeycutt ◽  
J. Ravi ◽  
G. A. Rozgonyi
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Complete Removal ◽  
Dislocation Loops ◽  
Enhanced Diffusion ◽  
Depth Profiles ◽  
Enhanced Dissolution ◽  
Implantation Damage ◽  
Transmission Electron ◽  
Defect Behavior ◽  
Secondary Ion

ABSTRACTThe effects of Ti and Co silicidation on P+ ion implantation damage in Si have been investigated. After silicidation of unannealed 40 keV, 2×1015 cm-2 P+ implanted junctions by rapid thermal annealing at 900°C for 10–300 seconds, secondary ion mass spectrometry depth profiles of phosphorus in suicided and non-silicided junctions were compared. While non-silicided and TiSi2 suicided junctions exhibited equal amounts of transient enhanced diffusion behavior, the junction depths under COSi2 were significantly shallower. End-of-range interstitial dislocation loops in the same suicided and non-silicided junctions were studied by planview transmission electron microscopy. The loops were found to be stable after 900°C, 5 minute annealing in non-silicided material, and their formation was only slightly effected by TiSi2 or COSi2 silicidation. However, enhanced dissolution of the loops was observed under both TiSi2 and COSi2, with essentially complete removal of the defects under COSi2 after 5 minutes at 900°C. The observed diffusion and defect behavior strongly suggest that implantation damage induced excess interstitial concentrations are significantly reduced by the formation and presence of COSi2, and to a lesser extent by TiSi2. The observed time-dependent defect removal under the suicide films suggests that vacancy injection and/or interstitial absorption by the suicide film continues long after the suicide chemical reaction is complete.

Photoluminescence Enhancement of CdS Nanocrystals Fabricated on Dithiocarbamate Functionalized PET Substrates

2012 ◽  
Vol 512-515 ◽  
pp. 1511-1515
Author(s):  
Chun Lin Zhao ◽  
Li Xing ◽  
Xiao Hong Liang ◽  
Jun Hui Xiang ◽  
Fu Shi Zhang ◽  
...  
Keyword(s):  
Room Temperature ◽  
Hexagonal Structure ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
Visible Absorption ◽  
X Ray ◽  
Cds Nanocrystals ◽  
Morphological Studies ◽  
Transmission Electron

Cadmium sulfide (CdS) nanocrystals (NCs) were self-assembled and in-situ immobilized on the dithiocarbamate (DTCs)-functionalized polyethylene glycol terephthalate (PET) substrates between the organic (carbon disulfide diffused in n-hexane) –aqueous (ethylenediamine and Cd2+ dissolved in water) interface at room temperature. Powder X-ray diffraction measurement revealed the hexagonal structure of CdS nanocrystals. Morphological studies performed by scanning electron microscopy (SEM) and high-resolution transmission electron microscope (HRTEM) showed the island-like structure of CdS nanocrystals on PET substrates, as well as energy-dispersive X-ray spectroscopy (EDS) confirmed the stoichiometries of CdS nanocrystals. The optical properties of DTCs modified CdS nanocrystals were thoroughly investigated by ultraviolet-visible absorption spectroscopy (UV-vis) and fluorescence spectroscopy. The as-prepared DTCs present intrinsic hydrophobicity and strong affinity for CdS nanocrystals.

scholarly journals Facile Organometallic Synthesis of Fe-Based Nanomaterials by Hot Injection Reaction

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1141
Author(s):  
Georgia Basina ◽  
Hafsa Khurshid ◽  
Nikolaos Tzitzios ◽  
George Hadjipanayis ◽  
Vasileios Tzitzios
Keyword(s):  
Room Temperature ◽  
Colloidal Particles ◽  
Iron Pentacarbonyl ◽  
Vibrating Sample Magnetometer ◽  
X Ray Diffraction ◽  
Organometallic Synthesis ◽  
X Ray ◽  
Transmission Electron ◽  
Hot Injection ◽  
The Stability

Fe-based colloids with a core/shell structure consisting of metallic iron and iron oxide were synthesized by a facile hot injection reaction of iron pentacarbonyl in a multi-surfactant mixture. The size of the colloidal particles was affected by the reaction temperature and the results demonstrated that their stability against complete oxidation related to their size. The crystal structure and the morphology were identified by powder X-ray diffraction and transmission electron microscopy, while the magnetic properties were studied at room temperature with a vibrating sample magnetometer. The injection temperature plays a very crucial role and higher temperatures enhance the stability and the resistance against oxidation. For the case of injection at 315 °C, the nanoparticles had around a 10 nm mean diameter and revealed 132 emu/g. Remarkably, a stable dispersion was created due to the colloids’ surface functionalization in a nonpolar solvent.

ION CHANNELING AND PIXE STUDIES OF S IMPLANTATION IN GaAs

1992 ◽  
Vol 02 (02) ◽  
pp. 151-159
Author(s):  
LIU SHIJIE ◽  
WANG JIANG ◽  
HU ZAOHUEI ◽  
XIA ZHONGHUONG ◽  
GAO ZHIGIANG ◽  
...  
Keyword(s):  
Room Temperature ◽  
Dislocation Loops ◽  
Good Recovery ◽  
Electrical Measurements ◽  
X Ray ◽  
Defect Complexes ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Activation Efficiency ◽  
Very High

GaAs (100) crystals were implanted with 100 keV S+ to a dose of 3×1015 cm−2 in a nonchanneling direction at room temperature, and treated with rapid thermal annealing (RTA). He+ Rutherford backscattering and particle-induced X-ray emission in channeling mode in combination with transmission electron microscopy (TEM) were used to study the damage and the lattice location of S atoms. It is revealed that the RTA at 950 °C for 10 sec has resulted in a very good recovery of crystallinity with a few residual defects in the form of dislocation loops, and a very high substitutionality (~90%). The activation efficiency and the Hall mobility of the implanted samples are found to be low after the electrical measurements. Based on these results an extended dopant diffusion effect for the residual defects and a correlation between the electrical properties and defect complexes are suggested.

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