Recovery Kinetics of Phosphorus Ion-Implanted a-Si:H

1996 ◽  
Vol 420 ◽  
Author(s):  
J. Nakata ◽  
S. Wagner ◽  
H. Gleskova ◽  
P. A. Stolk ◽  
J. M. Poate
Keyword(s):  
Gas Phase ◽  
Thermal Activation ◽  
Urbach Energy ◽  
Defect Density ◽  
Strained Si ◽  
Effective Electron ◽  
Additional Illumination ◽  
Hydrogenated Amorphous ◽  
Kinetics Of ◽  
Strained Bonds

AbstractHydrogenated amorphous silicon was implanted with phosphorus ions to a uniform concentration of 3×1020 cm-3 and defect saturation. The implants were annealed isochronally up to 400°C in the dark or under additional illumination. This illumination had no effect on recovery. The Urbach energy remains higher than that of silicon-implants. The midgap defect density anneals to ˜ 1018 cm-3, typical of gas-phase doped samples. The dark conductvity remains lower and its thermal activation energy higher than in gas-phase doped samples. We surmise that the Si-Si network absorbs some of the donor electron-induced defect density by forming strained Si-Si bonds. These strained bonds widen the band tails, and thus reduce the effective electron mobility and pin the Fermi level.

Simultaneous Relaxation of Network and Defects in Silicon-Implanted a-Si:H

1995 ◽  
Vol 377 ◽  
Author(s):  
J. Nakata ◽  
S. Sherman ◽  
S. Wagner ◽  
P. A. Stolk ◽  
J. M. Poate
Keyword(s):  
Electronic Transport ◽  
Annealing Temperature ◽  
Urbach Energy ◽  
Defect Density ◽  
Dark Conductivity ◽  
Equilibrium Theory ◽  
Hopping Conduction ◽  
Dangling Bond ◽  
Bond Density ◽  
Additional Illumination

ABSTRACTWe report extensive optical and electronic transport data on silicon-implanted a-Si:H, annealed in steps in the dark or with additional illumination. All measured properties relax gradually with increasing annealing temperature. The dark conductivity of the as-implanted film is dominated by hopping conduction via midgap defects. This channel is pinched off during the initial stages of annealing. The midgap defect density and the Urbach energy follow an annealing path that agrees qualitatively with the trajectory postulated by the equilibrium theory of the dangling-bond density. Therefore, the silicon network and the defect density equilibrate continuously during network relaxation.

Saturation behavior of the Light-Induced Defect Density in Hydrogenated Amorphous Silicon

1990 ◽  
Vol 192 ◽  
Author(s):  
H. R. Park ◽  
J. Z. Liu ◽  
P. Roca i Cabarrocas ◽  
A. Maruyama ◽  
M. Isomura ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Urbach Energy ◽  
Defect Density ◽  
Generation Rate ◽  
Carrier Generation ◽  
Defect Generation ◽  
Ion Laser ◽  
Hydrogenated Amorphous ◽  
Defect Densities

ABSTRACTUsing a Kr ion laser (λ = 647.1 nm) to produce a carrier generation rate G of 3 × 1020 cm−3s−1, we have saturated the light-induced defect generation in hydrogenated (and fluorinated) amorphous silicon (a-Si:H(F)), within a few hours near room temperature. While the defect generation rate scales roughly with 1/G2, the saturation defect densities Ns,sat are essentially independent of G. The saturation is not due to thermal annealing. We have further measured Ns,sat m 37 a-Si:H(F) films grown in six different reactors under different conditions. The results show that Ns,sat lies between 5 × 1016 and 2 × 1017 cm−3, that Ns,sat drops with decreasing optical gap and hydrogen content, and that Ns,sat is not correlated with the initial defect density or with the Urbach energy.

Theory of Hydrogen Complexes in Si

1990 ◽  
Vol 209 ◽  
Author(s):  
S. B. Zhang ◽  
W. B. Jackson
Keyword(s):  
Binding Energy ◽  
Raman Spectra ◽  
Experimental Results ◽  
Lattice Expansion ◽  
Strained Si ◽  
Amorphous Si ◽  
Gap States ◽  
Hydrogenated Amorphous ◽  
And Diffusion ◽  
Strained Bonds

ABSTRACTThe predominance of Si-H bonding and the origin of {111} platelets in hydrogenated Si remain important unsolvedproblems in the study of H in Si.Recent theoretical and experimental results indicate that H predominately enters the Si network in pairs. A promising diatomic H configuration consists of a bond centered H closely associated with an antibonding centered H. In this work, we show that adjacent diatomic H pairs have a binding energy of 0.2 eV/2H. The binding originates from relaxation of strained Si-Si backbonds. Further clustering of the H pairs eliminates all strained bonds, forming a hydrogenated platelet oriented along the {111} plane. The binding energy of 3.95 eV/2H for the platelet is 0.15 eV lower than that for interstitial H2 molecules in c-Si. Lattice expansion makes the platelets energetically more competitivewith the lowest energy Si-H bonding confi gration at hydrogenated Si (111) surfaces. These higher level complexes explainthe formation of platelets, Raman spectra, and absence of gap states in hydrogenated c- Si as well as the clustered phaseseen in NMR and of H evolution and diffusion in hydrogenated amorphous Si.

Degradation Kinetics of Hydrogenated Amorphous Silicon: The Effect of Embedded Microcrystallites

1998 ◽  
Vol 507 ◽  
Author(s):  
Yoram Lubianiker ◽  
J. David Cohen ◽  
Hyun-Chul Jin ◽  
John R. Abelson
Keyword(s):  
Amorphous Silicon ◽  
Degradation Rate ◽  
Amorphous Matrix ◽  
Defect Density ◽  
Degradation Kinetics ◽  
Hydrogenated Amorphous Silicon ◽  
Significant Fraction ◽  
Hydrogenated Amorphous ◽  
Kinetics Of

ABSTRACTWe have studied the degradation kinetics of undoped a-Si:H films which contain a significant fraction of silicon microcrystallites. The degradation rate is found to be exceptionally slow in the first stage of degradation, then the defect density follows the “normal” t1/3rate and finally saturates. We present a model which relates this abnormal kinetics to the microcrystallites which are embedded in the amorphous matrix.

Defect Equilibration in Amorphous Silicon Films Submitted to High Intensity Illumination

1996 ◽  
Vol 420 ◽  
Author(s):  
C. Godet ◽  
P. Roca i Cabarrocas
Keyword(s):  
High Intensity ◽  
Urbach Energy ◽  
Defect Density ◽  
Fast Kinetics ◽  
Slow Kinetics ◽  
Wide Range ◽  
Medium Range ◽  
Infrared Signature ◽  
Kinetics Of ◽  
Creation Rate

AbstractIn plasma-deposited a-Si:H films, the increase of the metastable defect density produced by high-intensity illumination usually follows a stretched-exponential time-dependence, with a characteristic time τSE and a steady-state value Nss. For a wide range of deposition conditions, we have observed that both parameters depend on the material properties. The strong correlation between Nss and the monohydride [SiH]2000 density, reported previously, has been interpreted as due to the trapping of metastable H atoms at specific sites.In this study of the kinetics of defect equilibration under high-intensity illumination, we find two groups of a-Si:H films with fast and slow kinetics, respectively. These two groups display a very different dependence of the defect creation rate as a function of the optical gap. For the fast kinetics films, we emphasize the critical influence of the Urbach energy Eu deduced from the exponential optical absorption edge (1/τSE increases as a function of Eu). The slow kinetics films are characterized by a high nanovoid density evidenced by their SiHx infrared signature at 2090 cm-1. The results are discussed in relation to the medium-range H motion.

Comparison of Dark and Light-Induced Annealing of Metastable Defects in a-Si:H

1994 ◽  
Vol 336 ◽  
Author(s):  
Helena Gleskova ◽  
M. Nakata ◽  
S. Wagner
Keyword(s):  
Thermal Activation ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Annealing Process ◽  
Free Electrons ◽  
Initial Value ◽  
Free Electron Density ◽  
Rate Law ◽  
Hydrogenated Amorphous ◽  
Annealing Experiments

ABSTRACTWe propose a rate law that unifies the dark and light-induced annealing of metastable defects in hydrogenated Amorphous silicon (a-Si:H). Its form is dN/dt ∼ - C Naf (T), where N is the defect density, C the concentration of free electrons (holes), f (T) a dispersive function, t the time, and T the temperature. Special dark and light-annealing experiments, designed to keep the free electron density constant, were conducted to eliminate C from the rate law. We find that f (T) for the dark annealing process differs from that for light-annealing. We calculated the thermal activation energies for the decay of N to 1/e of its initial value. They are 1.56±0.2 eV for dark annealing and 0.91±0.2 eV for light-induced annealing.

Diffusion model for deposition of epitaxial GaAs layers prepared by the MOCVD method

1991 ◽  
Vol 56 (10) ◽  
pp. 2020-2029
Author(s):  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma ◽  
Rudolf Hladina
Keyword(s):  
Experimental Data ◽  
Growth Rate ◽  
Kinetic Model ◽  
Gas Phase ◽  
Substrate Surface ◽  
Deposition Process ◽  
Hydrogen Atmosphere ◽  
Epitaxial Gaas ◽  
Kinetics Of ◽  
Good Agreement

The authors proposed and treated quantitatively a kinetic model for deposition of epitaxial GaAs layers prepared by reaction of trimethylgallium with arsine in hydrogen atmosphere. The transport of gallium to the surface of the substrate is considered as the controlling process. The influence of the rate of chemical reactions in the gas phase and on the substrate surface on the kinetics of the deposition process is neglected. The calculated dependence of the growth rate of the layers on the conditions of the deposition is in a good agreement with experimental data in the temperature range from 600 to 800°C.

scholarly journals Towards High Efficacy of Pd-Au/C Catalyst for Tetrachloromethane Hydrodechlorination

Chemistry ◽  
2021 ◽  
Vol 3 (1) ◽  
pp. 338-359
Author(s):  
Magdalena Bonarowska ◽  
Zbigniew Kaszkur ◽  
Krzysztof Matus ◽  
Alicja Drelinkiewicz ◽  
Tomasz Szumełda ◽  
...  
Keyword(s):  
Microwave Irradiation ◽  
Gas Phase ◽  
Thermal Activation ◽  
Supported Catalysts ◽  
Carbon Support ◽  
Thermal Reduction ◽  
Microwave Oven ◽  
Optimal Conditions ◽  
Catalyst Activation ◽  
Critical Part

We present an efficient strategy for synthesising the PdAu catalysts with a homogeneous PdAu alloy phase for environmentally important hydrodechlorination of tetrachloromethane in the gas phase. The synthesis of carbon-supported catalysts involved two major steps: (i) incorporation of palladium and gold nanoparticles into carbon support and (ii) activation of the catalysts. The critical part of this work was to find the optimal conditions for both steps. Thus, the incorporation of the nanoparticles was carried out in two ways, by impregnation and direct redox reaction method using acetone solutions of metal precursor salts. The activation was performed either by a conventional thermal reduction in hydrogen or flash irradiation in a microwave oven. The homogeneity and structure of the PdAu alloy were found to depend on the catalyst activation method critically. In all cases, we observed better homogeneity for catalysts that were subject to microwave irradiation. Moreover, the flash microwave irradiation of prepared catalysts provided catalysts of better stability and selectivity towards the desired products (hydrocarbons) in the hydrodechlorination of tetrachloromethane as compared to the catalyst obtained by conventional thermal activation in hydrogen.

Is Thermal and Light-Induced Annealing of Met Astable Defects in a-Si:H Driven by Electrons?

1995 ◽  
Vol 377 ◽  
Author(s):  
Helena Gleskova ◽  
S. Wagner
Keyword(s):  
Electrical Conductivity ◽  
Light Intensity ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Free Electrons ◽  
Free Electron Density ◽  
Independent Variables ◽  
The Third ◽  
Defect Annealing ◽  
Hydrogenated Amorphous

ABSTRACTWe report results of a search for a unifying rate law for the annealing of metastable defects in hydrogenated amorphous silicon (a-Si:H). We tested the hypothesis that defect-annealing by both heating or illumination is driven by the density of free electrons. This hypothesis is formulated via the rate equation - dN/dt = A nα N f (T), where N is the defect density, t the time, A a constant, n the free electron density, and f (T) a function of temperature derived from a distribution of annealing energies. The model fits two sets of data, with light-intensity and electrical conductivity as the independent variables, reasonably well, with a ranging from 0.39 to 0.76, but not the third set, where we varied the temperature.

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