The Recrystallization Properties of Poly-GexSi1-xON SiO2/Si

1997 ◽  
Vol 472 ◽  
Author(s):  
N. Jiang ◽  
J.R. Ma ◽  
M. Wu ◽  
X.D. Huang ◽  
S.L. Gu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Raman Spectra ◽  
Annealing Process ◽  
Subsequent Annealing ◽  
Damage Distribution ◽  
Grain Sizes ◽  
Longitudinal Pattern

ABSTRACTIn this paper, we have developed a new way to recrystallize the poly-GeSi on SiO2. 300nm poly-GeSi was grown by RTP/VLP-CVD on SiO2/Si, and then amorphized by 180 keV-Si+ ion implantation with dose of 2×10'4 cm'2. An amorphized region with the damage distribution was formed. After subsequent annealing process, the comparison between the XRD scans and Raman spectra of poly-GeSi and poly-Si indicated that the annealed poly-GeSi was more recrystallized than the poly-Si in the same conditions, this was the inducement of Ge in the annealing process. The segregation of Ge atoms in the heavy damaged region would enhance this inducement. The XTEM showed the longitudinal pattern of GeSi grains which meant the longitudinal sizes were much greater than the horizontal sizes. After annealing process, the final GeSi grain sizes were greater than the poly-Si grain sizes processed in SSIC with the same implantation conditions.

Raman Spectra of Ion Implanted Graphite

1981 ◽  
Vol 7 ◽  
Author(s):  
B.S. Elman ◽  
H. Mazurek ◽  
M.S. Dresselhaus ◽  
G. Dresselhaus
Keyword(s):  
Raman Spectroscopy ◽  
Ion Implantation ◽  
Raman Spectra ◽  
Annealing Temperature ◽  
Annealing Process ◽  
Lattice Order ◽  
Annealing Temperatures ◽  
High Fluences ◽  
Lattice Damage ◽  
The Way

ABSTRACTRaman spectroscopy is used in a variety of ways to monitor different aspects of the lattice damage caused by ion implantation into graphite. Particular attention is given to the use of Raman spectroscopy to monitor the restoration of lattice order by the annealing process, which depends critically on the annealing temperature and on the extent of the original lattice damage. At low fluences the highly disordered region is localized in the implanted region and relatively low annealing temperatures are required, compared with the implantation at high fluences where the highly disordered region extends all the way to the surface. At high fluences, annealing temperatures comparable to those required for the graphitization of carbons are necessary to fully restore lattice order.

Stress relaxation of Si/Si1−x Ge x /Si structure prepared by ion implantation and subsequent annealing process

Rare Metals ◽  
2011 ◽  
Vol 30 (3) ◽  
pp. 270-273
Author(s):  
Wenting Xu ◽  
Hailing Tu ◽  
Qing Chang ◽  
Qinghua Xiao
Keyword(s):  
Stress Relaxation ◽  
Ion Implantation ◽  
Annealing Process ◽  
Subsequent Annealing

Effects of Se implantation on the compositional disordering of GaAs-AlAs superlattices

1985 ◽  
Vol 56 ◽  
Author(s):  
T. NAKAMURA ◽  
S. KOMIYA ◽  
T. INATA ◽  
S. MUTO ◽  
S. HIYAMIZU
Keyword(s):  
Thermal Diffusion ◽  
Raman Spectra ◽  
Low Dose ◽  
Phonon Frequency ◽  
Gaas Layer ◽  
Probable Mechanism ◽  
Subsequent Annealing ◽  
Alas Layer

AbstractThe LO phonon frequency evaluated from Raman spectra identifies two compositional disordering mechanisms in GaAs-AlAs superlattices. For a high Se dose, the LO phonons of the Al0.5Ga0.5As alloy are observed from the asimplanted samples. That means the compositional disordering occurred just by Se implantation. The probable mechanism for this disordering is the implantation of Ga atoms into the AlAs layer and of Al atoms into the GaAs layer. The superlattices implanted at a low dose are disordered by the subsequent annealing. The mechanism is the enhanced interdiffusion of both Ga and Al atoms between the GaAs and AlAs layers by Se thermal diffusion.

P-type ZnO thin films achieved by N+ ion implantation through dynamic annealing process

2012 ◽  
Vol 101 (11) ◽  
pp. 112101 ◽  
Author(s):  
M. A. Myers ◽  
M. T. Myers ◽  
M. J. General ◽  
J. H. Lee ◽  
L. Shao ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Annealing Process ◽  
Zno Thin Films ◽  
P Type

scholarly journals Effect of Annealing Process on the Mechanical Properties of X70 Pipeline Steel

2018 ◽  
Vol 186 ◽  
pp. 02001
Author(s):  
Teng-wei Zhu ◽  
Cheng-liang Miao ◽  
Zheng Cheng ◽  
Zhipeng Wang ◽  
Yang Cui ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Mechanical Properties ◽  
Scanning Electron Microscopy ◽  
Tensile Strength ◽  
Annealing Temperature ◽  
Pipeline Steel ◽  
Annealing Process ◽  
X70 Pipeline Steel ◽  
Grain Sizes ◽  
Scanning Electron

The influence of the mechanical properties of X70 pipeline steel under different annealing temperature was studied. The corresponding microstructure was investigated by the Field Emission Scanning Electron Microscopy. The results showed that the yield strength and the tensile strength both experienced from rise to decline with the increase of annealing temperature. The grain sizes were coarse and a large amount of cementite precipitated due to preserving temperature above 550 °, which induced matrix fragmentation and deteriorate the -10 ° DWTT Toughness. There were little changes on the microstructure and mechanical properties when the annealing temperature was under 500 °.

Correlation Between Defect Characteristics and Layer Intermixing in Si Implanted GaAs/AIGaAs Superlattices

1989 ◽  
Vol 147 ◽  
Author(s):  
Samuel Chen ◽  
S.-Tong Lee ◽  
G. Braunstein ◽  
G. Rajeswaran ◽  
P. Fellinger
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Peak Position ◽  
Compound Semiconductor ◽  
Subsequent Annealing ◽  
Semiconductor Superlattices ◽  
Furnace Annealing ◽  
Annealing Conditions ◽  
Induced Defects

AbstractDefects induced by ion implantation and subsequent annealing are found to either promote or suppress layer intermixing in Ill-V compound semiconductor superlattices (SLs). We have studied this intriguing relationship by examining how implantation and annealing conditions affect defect creation and their relevance to intermixing. Layer intermixing has been induced in SLs implanted with 220 keV Si+ at doses < 1 × 1014 ions/cm2 and annealed at 850°C for 3 hrs or 1050°C for 10 s. Upon furnace annealing, significant Si in-diffusion is observed over the entire intermixed region, but with rapid thermal annealing layer intermixing is accompanied by negligible Si movement. TEM showed that the totally intermixed layers are centered around a buried band of secondary defects and below the Si peak position. In the nearsurface region layer intermixing is suppressed and is only partially completed at ≤1 × 1015 Si/cm2. This inhibition is correlated to a loss of the mobile implantation-induced defects, which are responsible for intermixing.

Numerical study of silicon vacancy color centers in silicon carbide by helium ion implantation and subsequent annealing

2021 ◽  
Author(s):  
Yexin Fan ◽  
ying song ◽  
zongwei xu ◽  
jintong wu ◽  
rui zhu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Color Center ◽  
Md Simulation ◽  
Subsequent Annealing ◽  
Atomic Scale ◽  
New Method ◽  
Color Centers ◽  
Silicon Vacancy ◽  
Helium Ion

Abstract Molecular dynamics (MD) simulation is adopted to discover the underlying mechanism of silicon vacancy color center and damage evolution during helium ions implanted four-hexagonal silicon carbide (4H-SiC) and subsequent annealing. The atomic-scale mechanism of silicon vacancy color centers in the process of He ion implantation into 4H-SiC can be described more accurately by incorporating electron stopping power for He ion implantation. We present a new method for calculating the silicon vacancy color center numerically, which considers the structure around the color center and makes the statistical results more accurate than the Wigner-Seitz defect analysis method. At the same time, photoluminescence (PL) spectroscopy of silicon vacancy color center under different helium ion doses is also characterized for validating the numerical analysis. The MD simulation of the optimal annealing temperature of silicon vacancy color center is predicted by the proposed new method.

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