Microstructural Development of Dispersion Strengthened Cu Thin Films

1999 ◽  
Vol 562 ◽  
Author(s):  
D. Weiss ◽  
O. Kraft ◽  
E. Arzt
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
High Vacuum ◽  
Oxide Dispersion Strengthened ◽  
Ultra High Vacuum ◽  
Processing Route ◽  
Microstructural Development ◽  
High Temperature Strength ◽  
Second Phase ◽  
Si Substrates

ABSTRACTThe internal oxidation method is applied for the first time to produce a fine dispersion of second phase particles in thin films. A processing route is presented which includes ultra-high vacuum magnetron sputtering of about 1 μm thick alloy films onto Si substrates followed by in situ annealing and oxidation. Two different Cu-base alloys are examined, Cu-Y and Cu-Al, in which the extent of miscibilitiy differs significantly. This has considerable influence on the grain growth behavior. Nanoindention and wafer-curvature experiments show a drastic improvement of both room-temperature and high-temperature strength. Phenomena well known from bulk oxide-dispersion strengthened (ODS) alloys are found to appear in the thin films as well: Results on abnormal grain growth and the formation of creep voids are presented and discussed in terms of particle effects.

Microstructural Development of Dispersion Strengthened Cu Thin Films

1999 ◽  
Vol 564 ◽  
Author(s):  
D. Weiss ◽  
O. Kraft ◽  
E. Arzt
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
High Vacuum ◽  
Oxide Dispersion Strengthened ◽  
Ultra High Vacuum ◽  
Processing Route ◽  
Microstructural Development ◽  
High Temperature Strength ◽  
Second Phase ◽  
Si Substrates

AbstractThe internal oxidation method is applied for the first time to produce a fine dispersion of second phase particles in thin films. A processing route is presented which includes ultra-high vacuum magnetron sputtering of about 1 μm thick alloy films onto Si substrates followed by insitu annealing and oxidation. Two different Cu-base alloys are examined, Cu-Y and Cu-Al, in which the extent of miscibilitiy differs significantly. This has considerable influence on the grain growth behavior. Nanoindention and wafer-curvature experiments show a drastic improvement of both room-temperature and high-temperature strength. Phenomena well known from bulk oxide-dispersion strengthened (ODS) alloys are found to appear in the thin films as well: Results on abnormal grain growth and the formation of creep voids are presented and discussed in terms of particle effects.

Structure and Magnetic Properties of Fe-N Thin Films Grown by ECR Deposition

1999 ◽  
Vol 562 ◽  
Author(s):  
Š émeth ◽  
H. Akinaga ◽  
H. Boeve ◽  
H. Bender ◽  
J. de Boeck ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Cyclotron Resonance ◽  
Microwave Plasma ◽  
Nitrogen Concentration ◽  
High Vacuum ◽  
Plasma Source ◽  
Columnar Structure ◽  
Ultra High Vacuum ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTThe growth of FexNy thin films on GaAs, In0.2Ga0.8As, and SiO2/Si substrates using an ultra high-vacuum (UHV) deposition chamber equipped with electron cyclotron resonance (ECR) microwave plasma source is presented. The structural properties of the deposited films have been measured using various techniques as x-ray diffraction (XRD), Auger electron spectroscopy (AES), and transmission electron microscopy (TEM). The results of XRD measurements show that the films consist of a combination of α-Fe, α'-Fe, y-Fe4N, and α”- Fe16N2 phases. The depth profiles, calculated from the Auger peak intensities, show a uniform nitrogen concentration through the films. The TEM reveals a columnar structure of these films. The properties of the different Fe-N layers have been exploited in the fabrication of Fe(N) / FexNy / Fe trilayer structures, where Fe(N) means a slightly nitrogen doped Fe film. The magneto-transport properties of this trilayer structure grown on In0.2Ga0.8As substrates are presented.

Structure And Magnetic Properties Of Fe-N Thin Films Grown By Ecr Deposition

1999 ◽  
Vol 577 ◽  
Author(s):  
S. Németh ◽  
H. Akinaga ◽  
H. Boeve ◽  
H. Bender ◽  
J. De Boeck ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Cyclotron Resonance ◽  
Microwave Plasma ◽  
Nitrogen Concentration ◽  
High Vacuum ◽  
Plasma Source ◽  
Columnar Structure ◽  
Ultra High Vacuum ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTThe growth of FexNy thin films on GaAs, In0.2Ga0.8As, and Si02/Si substrates using an ultra high-vacuum (UHV) deposition chamber equipped with electron cyclotron resonance (ECR) microwave plasma source is presented. The structural properties of the deposited films have been measured using various techniques as x-ray diffraction (XRD), Auger electron spectroscopy (AES), and transmission electron microscopy (TEM). The results of XRD measurements show that the films consist of a combination of α-Fe, α'-Fe, γ-Fe4N, and α”- Fe16N2 phases. The depth profiles, calculated from the Auger peak intensities, show a uniform nitrogen concentration through the films. The TEM reveals a columnar structure of these films. The properties of the different Fe-N layers have been exploited in the fabrication of Fe(N) / FexNy / Fe trilayer structures, where Fe(N) means a slightly nitrogen doped Fe film. The magneto-transport properties of this trilayer structure grown on In0.2Ga0.8As substrates are presented.

Abnormal Grain Growth Behavior in Nanostructured Al Thin Films on SiO2/Si Substrates

2008 ◽  
Vol 1150 ◽  
Author(s):  
Flavia Piegas Luce ◽  
Paulo Fichtner ◽  
Luiz Fernando Schelp ◽  
Fernando Zawislak
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Grain Growth ◽  
Thermal Evolution ◽  
High Vacuum ◽  
Growth Behavior ◽  
Abnormal Grain Growth ◽  
Regular Growth ◽  
Si Substrates ◽  
Size Dispersion

AbstractWe report on the formation of nanocrystalline Al thin films (180 nm thick) via magnetron sputtering technique using a step-wise deposition concept where columnar growth is inhibited, giving place to the development of a nanocrystalline mosaic grain arrangement with characteristic diameters of ≈ 30 nm and small size dispersion. The thermal evolution of the grain size distributions is investigated by transmission electron microscopy (TEM) in samples annealed in high vacuum for 3600 s. For the temperature range 300 ≤ T ≤ 462 °C the system presents a 3-D regular growth behavior up to sizes ≈ 70 nm. For T = 475 °C a rather sharp transition from normal to abnormal grain growth occurs. The grains extend to the film thickness and present mean lateral dimensions of ≈ 1000 nm. The observed phenomenon is discussed in terms of a synergetic grain boundary mobility effect caused by the characteristics of the initial nanogranular grain boundary morphology.

TEM sample preparation of wear-tested room-temperature pulsed-laser-deposited thin films of MoS2 by ultramicrotomy

1993 ◽  
Vol 51 ◽  
pp. 1118-1119
Author(s):  
Pamela F. Lloyd ◽  
Scott D. Walck
Keyword(s):  
Thin Films ◽  
Sample Preparation ◽  
Room Temperature ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Ultra High Vacuum ◽  
Wear Testing ◽  
Preparation Technique ◽  
Cross Sectional ◽  
Aerospace Applications

Pulsed laser deposition (PLD) is a novel technique for the deposition of tribological thin films. MoS2 is the archetypical solid lubricant material for aerospace applications. It provides a low coefficient of friction from cryogenic temperatures to about 350°C and can be used in ultra high vacuum environments. The TEM is ideally suited for studying the microstructural and tribo-chemical changes that occur during wear. The normal cross sectional TEM sample preparation method does not work well because the material’s lubricity causes the sandwich to separate. Walck et al. deposited MoS2 through a mesh mask which gave suitable results for as-deposited films, but the discontinuous nature of the film is unsuitable for wear-testing. To investigate wear-tested, room temperature (RT) PLD MoS2 films, the sample preparation technique of Heuer and Howitt was adapted.Two 300 run thick films were deposited on single crystal NaCl substrates. One was wear-tested on a ball-on-disk tribometer using a 30 gm load at 150 rpm for one minute, and subsequently coated with a heavy layer of evaporated gold.

scholarly journals The Growth of Semiconductor Thin Films Studied by RHEED

1990 ◽  
Vol 43 (5) ◽  
pp. 583
Author(s):  
GL Price
Keyword(s):  
Thin Films ◽  
Surface Science ◽  
High Vacuum ◽  
High Energy ◽  
Ultra High Vacuum ◽  
Large Area ◽  
Growth Modes ◽  
Semiconductor Thin Films ◽  
Wide Range ◽  
Recent Developments

Recent developments in the growth of semiconductor thin films are reviewed. The emphasis is on growth by molecular beam epitaxy (MBE). Results obtained by reflection high energy electron diffraction (RHEED) are employed to describe the different kinds of growth processes and the types of materials which can be constructed. MBE is routinely capable of heterostructure growth to atomic precision with a wide range of materials including III-V, IV, II-VI semiconductors, metals, ceramics such as high Tc materials and organics. As the growth proceeds in ultra high vacuum, MBE can take advantage of surface science techniques such as Auger, RHEED and SIMS. RHEED is the essential in-situ probe since the final crystal quality is strongly dependent on the surface reconstruction during growth. RHEED can also be used to calibrate the growth rate, monitor growth kinetics, and distinguish between various growth modes. A major new area is lattice mismatched growth where attempts are being made to construct heterostructures between materials of different lattice constants such as GaAs on Si. Also described are the new techniques of migration enhanced epitaxy and tilted superlattice growth. Finally some comments are given On the means of preparing large area, thin samples for analysis by other techniques from MBE grown films using capping, etching and liftoff.

scholarly journals Strain-Relief Patterns and Kagome Lattice in Self-Assembled C60 Thin Films Grown on Cd(0001)

2021 ◽  
Vol 22 (13) ◽  
pp. 6880
Author(s):  
Zilong Wang ◽  
Minlong Tao ◽  
Daxiao Yang ◽  
Zuo Li ◽  
Mingxia Shi ◽  
...  
Keyword(s):  
Thin Films ◽  
Self Assembly ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Scanning Tunneling ◽  
Kagome Lattice ◽  
Tunneling Microscopy ◽  
Kagomé Lattice ◽  
Temperature Scanning ◽  
C60 Films

We report an ultra-high vacuum low-temperature scanning tunneling microscopy (STM) study of the C60 monolayer grown on Cd(0001). Individual C60 molecules adsorbed on Cd(0001) may exhibit a bright or dim contrast in STM images. When deposited at low temperatures close to 100 K, C60 thin films present a curved structure to release strain due to dominant molecule–substrate interactions. Moreover, edge dislocation appears when two different wavy structures encounter each other, which has seldomly been observed in molecular self-assembly. When growth temperature rose, we found two forms of symmetric kagome lattice superstructures, 2 × 2 and 4 × 4, at room temperature (RT) and 310 K, respectively. The results provide new insight into the growth behavior of C60 films.

AlN thin films fabricated by ultra-high vacuum electron-beam evaporation with ammonia for silicon-on-insulator application

2005 ◽  
Vol 239 (3-4) ◽  
pp. 327-334 ◽  
Author(s):  
Ming Zhu ◽  
Peng Chen ◽  
Ricky K.Y. Fu ◽  
Weili Liu ◽  
Chenglu Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
High Vacuum ◽  
Electron Beam Evaporation ◽  
Silicon On Insulator ◽  
Ultra High Vacuum

Preferential grain growth and improved fatigue endurance in Sr substituted PZT thin films on Pt(111)/TiOx/SiO2/Si substrates

2009 ◽  
Vol 482 (1-2) ◽  
pp. 253-255 ◽  
Author(s):  
N.K. Karan ◽  
R. Thomas ◽  
S.P. Pavunny ◽  
J.J. Saavedra-Arias ◽  
N.M. Murari ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Pzt Thin Films ◽  
Si Substrates ◽  
Fatigue Endurance

Ultra-high vacuum chemical vapor deposition and in situ characterization of titanium oxide thin films

1991 ◽  
Vol 6 (9) ◽  
pp. 1913-1918 ◽  
Author(s):  
Jiong-Ping Lu ◽  
Rishi Raj
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Titanium Oxide ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Titanium Isopropoxide ◽  
Ultra High Vacuum

Chemical vapor deposition (CVD) of titanium oxide films has been performed for the first time under ultra-high vacuum (UHV) conditions. The films were deposited through the pyrolysis reaction of titanium isopropoxide, Ti(OPri)4, and in situ characterized by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). A small amount of C incorporation was observed during the initial stages of deposition, through the interaction of precursor molecules with the bare Si substrate. Subsequent deposition produces pure and stoichiometric TiO2 films. Si–O bond formation was detected in the film-substrate interface. Deposition rate was found to increase with the substrate temperature. Ultra-high vacuum chemical vapor deposition (UHV-CVD) is especially useful to study the initial stages of the CVD processes, to prepare ultra-thin films, and to investigate the composition of deposited films without the interference from ambient impurities.

Sign in / Sign up

Export Citation Format

Share Document