Pendeo Epitaxy Of 3C-SiC on Si Substrates

2000 ◽  
Vol 622 ◽  
Author(s):  
G.E. Carter ◽  
T. Zheleva ◽  
G. Melnychuck ◽  
B. Geil ◽  
K. Jones ◽  
...  
Keyword(s):  
Low Cost ◽  
Large Diameter ◽  
Side Wall ◽  
Cost Effective ◽  
Interface Layer ◽  
Lateral Epitaxial Overgrowth ◽  
Si Substrates ◽  
Device Applications ◽  
Sic Film

ABSTRACTPendeo Epitaxy is a type of Lateral Epitaxial Overgrowth (LEO) that instead of using a dielectric buffer layer, uses an etched substrate to grow laterally without an interface layer. We report the first successful growth of 3C-SiC on Si using Pendeo epitaxy. Rectangular stripes of 3C-SiC on (100) Si substrates were fabricated, along both the [110] and [100] directions. Pendeo epi was only observed for columns parallel to [001], indicating a preferred growth facet for Pendeo epi of 3C-SiC on Si. SEM and TEM investigations were performed to assess the material quality of the Pendeo 3C-SiC material. Films were grown for 60 min at 1310°C and film coalescence was achieved without evidence of voids where the growth fronts joined. TEM data indicate not only the growth of vertical and lateral 3C-SiC on the 3C-SiC seed layer but direct nucleation of 3C-SiC on the exposed Si columns side wall and trench bottom, despite the lack of a carbonization procedure. The quality of the Pendeo 3C-SiC film appears to be of high quality indicating that Pendeo epi of 3C-SiC on low-cost, large-diameter Si substrates may prove to be a cost effective way to grow device-grade SiC layers on Si substrates for device applications.

Growth and processing of heteroepitaxial 3C-SiC films for electronic devices applications

2012 ◽  
Vol 1433 ◽  
Author(s):  
A. Severino ◽  
M. Mauceri ◽  
R. Anzalone ◽  
A. Canino ◽  
N. Piluso ◽  
...  
Keyword(s):  
Growth Parameters ◽  
Low Cost ◽  
Electronic Devices ◽  
Young Modulus ◽  
Interesting Property ◽  
Large Area ◽  
Si Substrates ◽  
Application Fields ◽  
Sic Films

ABSTRACT3C-SiC is very attractive due the chance to be grown on large-area, low-cost Si substrates. Moreover, 3C-SiC has higher channel electron mobility with respect to 4H-SiC, interesting property in MOSFET applications. Other application fields where 3C-SiC can play a significant role are solar cells and MEMS-based sensors. In this work, we present a general overview of 3C-SiC growth on Si substrate. The influence of growth parameters, such as the growth rate, on the crystal quality of 3C-SiC films is discussed. The main issue for 3C-SiC development is the reduction of the stacking fault density, which shows an exponential decreasing trend with the film thickness tending to a saturation value of about 1000 cm-1. Some aspect of processing will be also faced with the realization of cantilever for Young modulus calculations and the implantation of Al ions for the study of damaging and recovery of the 3C-SiC crystal.

Development of Calibration Equipment for Geodetic Angle Measurement Instruments

2015 ◽  
Vol 220-221 ◽  
pp. 396-400
Author(s):  
Lauryna Šiaudinytė ◽  
Deividas Sabaitis ◽  
Domantas Bručas ◽  
Gintaras Dmitrijev
Keyword(s):  
Low Cost ◽  
Cost Effective ◽  
Angle Measurement ◽  
Measurement Instruments ◽  
Measurement Systems ◽  
Complex Processes ◽  
Cost Effective Alternative ◽  
Reducing Costs ◽  
The Cost

Production of high precision circular scales is a complicated process requiring expensive equipment and complex processes to achieve. Precision angle measurement equipment tends to be very expensive and therefore not accessible to all in need. Simplification of production of such devices can lead to reducing costs of angle measurement systems ensuring easier accessibility. A new method of producing precision circular scales using low cost mass production can reduce the costs of these devices drastically. Therefore, utilising a common CD technology as the basis for such scales is analysed. This paper deals with the analysis of the newest laser cutting method for plastic circular scales. Preliminary results of manufacturing such scales are presented in the paper as well as measurements of the grating of the scale were performed. The quality of different scales manufactured using different laser types is analysed in the study. The cost – effective alternative of manufacturing circular scales is discussed in the paper.

scholarly journals III–V Nanowires: Synthesis, Property Manipulations, and Device Applications

2014 ◽  
Vol 2014 ◽  
pp. 1-14 ◽  
Author(s):  
Ming Fang ◽  
Ning Han ◽  
Fengyun Wang ◽  
Zai-xing Yang ◽  
SenPo Yip ◽  
...  
Keyword(s):  
High Performance ◽  
Low Cost ◽  
Volume Ratio ◽  
Chemical Vapor ◽  
Cost Effective ◽  
Research Field ◽  
Synthesis Methods ◽  
Comprehensive Overview ◽  
Device Applications ◽  
Property Control

III–V semiconductor nanowire (NW) materials possess a combination of fascinating properties, including their tunable direct bandgap, high carrier mobility, excellent mechanical flexibility, and extraordinarily large surface-to-volume ratio, making them superior candidates for next generation electronics, photonics, and sensors, even possibly on flexible substrates. Understanding the synthesis, property manipulation, and device integration of these III–V NW materials is therefore crucial for their practical implementations. In this review, we present a comprehensive overview of the recent development in III–V NWs with the focus on their cost-effective synthesis, corresponding property control, and the relevant low-operating-power device applications. We will first introduce the synthesis methods and growth mechanisms of III–V NWs, emphasizing the low-cost solid-source chemical vapor deposition (SSCVD) technique, and then discuss the physical properties of III–V NWs with special attention on their dependences on several typical factors including the choice of catalysts, NW diameters, surface roughness, and surface decorations. After that, we present several different examples in the area of high-performance photovoltaics and low-power electronic circuit prototypes to further demonstrate the potential applications of these NW materials. Towards the end, we also make some remarks on the progress made and challenges remaining in the III–V NW research field.

The Behavior of Impurities During Producer Gas Implementation as Alternative Fuel in Steel Reheating Furnaces: A CFD and Thermo-Chemical Study

2016 ◽  
Author(s):  
M. Saffari Pour ◽  
N. Å. I. Andersson ◽  
M. Ersson ◽  
L. T. I. Jonsson ◽  
J. Niska ◽  
...  
Keyword(s):  
Alternative Fuels ◽  
Side Wall ◽  
Calorific Value ◽  
Chemical Study ◽  
Interface Layer ◽  
Injection Velocity ◽  
Heating Zone ◽  
Slab Surface ◽  
Steel Slab

The use of available and cheap industrial producer gases as alternative fuels for the steel reheating furnaces is an attractive topic for steel industry. The application of producer gases for such furnaces introduces not only the complicated combustion system of Low Calorific Value (LCV) gases, but also several impurities that could be problematic for the quality of final steel products. The quality of steel can be highly affected by the interaction of impurities with iron-oxides at hot slab surfaces. In this research, the combustion of producer gases and the behavior of impurities at the steel slab surface are studied by aid of a novel coupled computational fluid dynamics (CFD) and thermodynamics approach. The impurities are introduced as mineral ash particles with the particle size distributions of 15–100 μm. The CFD predicted data regarding the accumulation of ash particles are extracted from an interface layer at the flaring gas media around the steel slab surface. Later on, these predicted data are used for the thermo-chemical calculations regarding the formation of sticky solutions and stable phases at the steel slab surface. The results show that the particles are more likely follow the flow due to the high injection velocity of fuel (70 m/s) and the dominant inertial forces. More than 90 percent of particles have been evacuated through the exhaust pipes. The only 10 percent of remaining particles due to the high recirculation zones at the middle of furnace and the impinging effect of front walls tend to stick to the side wall of slab in the heating zone more than the soaking zone.

High Quality Graphene Formation on 3C-SiC/4H-AlN/Si Heterostructure

2014 ◽  
Vol 806 ◽  
pp. 89-93 ◽  
Author(s):  
Sai Jiao ◽  
Yuya Murakami ◽  
Hiroyoki Nagasawa ◽  
Hirokazu Fukidome ◽  
Isao Makabe ◽  
...  
Keyword(s):  
Quality Improvement ◽  
Production Cost ◽  
Structural Quality ◽  
Si Substrate ◽  
High Quality ◽  
Device Applications ◽  
High Scalability ◽  
Nanoelectromechanical System ◽  
Sic Film

The growth of graphene on 3C-SiC/Si heterostructure is a promising approach, which provides low production cost, high scalability and easiness of nanoelectromechanical system fabrication. However, the quality of graphene is still insufficient for device applications due to mediocre morphological and structural quality of the 3C-SiC epilayers compared to bulk SiC crystals and to excessive Si out-diffusion from the Si substrate. Here, we propose a solution of inserting a 4H-AlN layer between 3C-SiC and Si, which allows us to polish the 3C-SiC film without worrying about enhancement of the Si out-diffusion despite the thinning after the polishing. With this insertion, a considerable quality improvement is achieved in our graphene on silicon.

scholarly journals Development of a chopper charge amplifier for measuring the cavity pressure inside injection moulding tools and signal optimisation with a Kalman filter

2017 ◽  
Vol 6 (1) ◽  
pp. 199-210
Author(s):  
Manuel Schneider ◽  
Alexander Jahn ◽  
Norbert Greifzu ◽  
Norbert Fränzel
Keyword(s):  
Kalman Filter ◽  
Injection Moulding ◽  
Low Cost ◽  
Pressure Sensors ◽  
Cost Effective ◽  
Low Frequencies ◽  
Sensor Signals ◽  
Chopper Amplifier ◽  
Insight Into

Abstract. This article provides insight into the development of a powerful and low-cost chopper amplifier for piezoelectric pressure sensors and shows its possible applications for injection moulding machines. With a power supply of 3.3 volts and the use of standard components, a circuit is introduced which can be connected to a commercially available microcontroller without any additional effort. This amplifier is specialised for low frequencies and high-pressure environments. With the adjustment of the sample and chopper frequency by means of software, the amplifier can easily be adapted for other applications. This chopper amplifier is a very compact and cost-effective solution with a small number of required components. In this contribution, it will be shown that the amplifier has good results in various laboratory tests as well as in the production process. Furthermore, an approach to fuse data from force and pressure signals by using a Kalman filter will be presented. With this method, the quality of the sensor signals can be significantly improved. This article is an extension of our previous work in Schneider et al. (2016b).

scholarly journals High Electron Mobility Transistors Using AlGaN Materials

2019 ◽  
Author(s):  
Xiejia
Keyword(s):  
Electron Mobility ◽  
Low Cost ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Dimensional Electron ◽  
High Electron Mobility ◽  
Si Substrates ◽  
Electron Mobility Transistors ◽  
Dimensional Electron Gas

High electron mobility AlGaN/GaN have been successfully grown on low cost and high challenges AlN/Si substrates. By inserting a thin SiN layer between GaN and AlN to improve the quality of GaN, the result showed that the thin SiN layer could greatly increase the mobility of the two-dimensional electron gas formed at the interface of AlGaN and GaN layers. This suggests that it is possible to grow high-quality GaN on silicon as well as on sapphire for many applications

scholarly journals AlGaN Based High Electron Mobility Transistors

2019 ◽  
Author(s):  
Yu Yun ◽  
Xiejia
Keyword(s):  
Electron Mobility ◽  
Low Cost ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Dimensional Electron ◽  
High Electron Mobility ◽  
Si Substrates ◽  
Electron Mobility Transistors ◽  
Dimensional Electron Gas

High electron mobility AlGaN/GaN have been successfully grown on low cost and high challenges AlN/Si substrates. By inserting a thin SiN layer between GaN and AlN to improve the quality of GaN, the result showed that the thin SiN layer could greatly increase the mobility of the two-dimensional electron gas formed at the interface of AlGaN and GaN layers. This suggests that it is possible to grow high-quality GaN on silicon as well as on sapphire for many applications

Fabrication of PZT Based Capacitor with SrRuO3 Electrode for Memory Device Applications

1998 ◽  
Vol 541 ◽  
Author(s):  
Ashok Kumar ◽  
H. Rahman ◽  
M. Shamsuzzoha
Keyword(s):  
Ferroelectric Properties ◽  
Ruthenium Oxide ◽  
Memory Device ◽  
Ferroelectric Material ◽  
Test System ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Transmission Electron ◽  
Device Applications

AbstractStrontium ruthenium oxide (SrRuO3) was deposited on Pt/(100)Si substrates at varying temperatures and 300 mTorr oxygen pressure using the pulsed laser deposition method and was found to be highly crystalline and textured when deposited over 450°C. After achieving highly crystalline SrRuO3 films, capacitors using the ferroelectric material - PZT (PbZr0.5Ti0.48O3) were successfully fabricated on Pt/(100)Si substrates. The ferroelectric properties of the films were determined by the RT66A Standardized Ferroelectric Test System. The structural properties of the films were analyzed by X-ray diffraction. Transmission electron microscopy was used to determine the crystallinity and quality of interfaces among different layers.

Status of Large Diameter SiC Single Crystals at II-VI

2008 ◽  
Vol 600-603 ◽  
pp. 35-38 ◽  
Author(s):  
Avinash K. Gupta ◽  
Ilya Zwieback ◽  
Andrew E. Souzis ◽  
Murugesu Yoganathan ◽  
Thomas Anderson
Keyword(s):  
Single Crystals ◽  
Large Diameter ◽  
Lattice Curvature ◽  
Rocking Curve ◽  
Si Substrates ◽  
Edge Defects ◽  
New Generation ◽  
Sublimation Growth ◽  
Lattice Matched

II-VI is developing large-diameter SiC crystals to be used as lattice-matched, high thermal conductivity substrates for new generation GaN-based and SiC-based semiconductor devices. Large-diameter 6H SiC single crystals are grown at II-VI using our Advanced PVT sublimation growth process. Stable SI properties are achieved by compensation with vanadium, which results in high and spatially uniform resistivity, on the order of 1011 Ohm-cm. The quality of the presently grown 100 mm 6H SI substrates has been dramatically improved [1], and they are free of edge defects. Micropipe density in the 100 mm 6H SI substrates ranges from 2 to 8 cm-2 and dislocation density from 3·104 to 6·104 cm-2. X-ray rocking curves measured on as-sawn 100 mm 6H wafers showed edge-to-edge lattice curvature () between 0.1° and 0.3° and FWHM of the rocking curve between 50 and 100 arc-seconds

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