A Finite Element Study on the Nanoindentation of Thin Films

2000 ◽  
Vol 649 ◽  
Author(s):  
Xi Chen ◽  
Joost J. Vlassak

ABSTRACTNanoindentation is a technique commonly used for measuring thin film mechanical properties such as hardness and stiffness. Typically, shallow indentations with contact depths less than 10-20% of the film thickness are used to ensure that measurements are not affected by the presence of the substrate. In this study, we have used the finite element method to investigate the effect of substrate and pile-up on hardness and stiffness measurements of thin film systems. We find that: i) for soft films on hard substrates, the hardness is independent of the substrate as long as the indentation depth is less than 50% of the film thickness; ii) as soon as the hardness exceeds that of the substrate, the substrate effect becomes significant, even for indentations as shallow as 5% of the film thickness; iii) if the film is at least 40 times harder than the substrate, the plastic zone is mostly confined to the substrate while the film conforms to the deformed substrate by bending. We define a substrate effect factor and construct a map that may be useful in the interpretation of indentation measurements on thin films. It is found that the yield stress mismatch is a key factor characterizing the hardness of thin film system, and the elastic mismatch is important when making stiffness measurements. The results obtained in this study are very useful when it is difficult to avoid the influence of the substrate on the measurements.

2001 ◽  
Vol 16 (10) ◽  
pp. 2974-2982 ◽  
Author(s):  
Xi Chen ◽  
Joost J. Vlassak

Nanoindentation is a technique commonly used for measuring thin film mechanical properties such as hardness and stiffness. In this study, we used the finite element method to investigate the effect of substrate and pileup on hardness and stiffness measurements of thin film systems. We define a substrate effect factor and construct a map that may be useful in the interpretation of indentation measurements when it is not possible to make indentations shallow enough to avoid the influence of the substrate on the measurements. A new technique for measuring mechanical properties of thin films by nanoindentation is suggested at the end of this article.


1992 ◽  
Vol 7 (6) ◽  
pp. 1553-1563 ◽  
Author(s):  
Martha K. Small ◽  
W.D. Nix

Since its first application to thin films in the 1950's the bulge test has become a standard technique for measuring thin film mechanical properties. While the apparatus required for the test is simple, interpretation of the data is not. Failure to recognize this fact has led to inconsistencies in the reported values of properties obtained using the bulge test. For this reason we have used the finite element method to model the deformation behavior of a thin film in a bulge test for a variety of initial conditions and material properties. In this paper we will review several of the existing models for describing the deformation behavior of a circular thin film in a bulge test, and then analyze these models in light of the finite element results. The product of this work is a set of equations and procedures for analyzing bulge test data that will improve the accuracy and reliability of this technique.


2015 ◽  
Vol 789-790 ◽  
pp. 25-32
Author(s):  
Kuen Tsann Chen ◽  
Jui Hsing Chang ◽  
Jiun Yu Wu

In the article, a simple method for the modification of the Stoney's equation was presented. The Stoney's equation is proposed from the assumption of equi-biaxial residual stresses in thin films. In this present method, biaxial stresses are different in x-axis and y-axis on thin film. The location of neutral axis depends on the material parameters and the film thickness. The finite element method (FEM) was used to simulate the thermal stress on the thin film. The results of the modified methods are compared with the results of FEM and other literatures. The present method is more accurate than the Stoney's equation in the evaluation of such films.


Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 23
Author(s):  
Weiguang Zhang ◽  
Jijun Li ◽  
Yongming Xing ◽  
Xiaomeng Nie ◽  
Fengchao Lang ◽  
...  

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.


2020 ◽  
Vol 102 (21) ◽  
Author(s):  
Stephan Geprägs ◽  
Björn Erik Skovdal ◽  
Monika Scheufele ◽  
Matthias Opel ◽  
Didier Wermeille ◽  
...  

2014 ◽  
Vol 979 ◽  
pp. 240-243
Author(s):  
Narathon Khemasiri ◽  
Chanunthorn Chananonnawathorn ◽  
Mati Horprathum ◽  
Pitak Eiamchai ◽  
Pongpan Chindaudom ◽  
...  

Tantalum oxide (Ta2O5) thin films were deposited as the protective layers for the metal surface finishing by the DC reactive magnetron sputtering system. The effect of the Ta2O5 film thickness, ranging from 25 nm to 200 nm, on the physical properties and the anti-corrosive performance were investigated. The grazing-incidence X-ray diffraction (GIXRD) and the atomic force microscopy (AFM) were used to examine the crystal structures and the surface topologies of the prepared films, respectively. The XRD results showed that the Ta2O5 thin films were all amorphous. The AFM micrographs demonstrated the film morphology with quite smooth surface features. The surface roughness tended to be rough when the film thickness was increased. To examine the protective performance of the films, the poteniostat and galvanometer was utilized to examine the electrochemical activities with the 1M NaCl as the corrosive electrolyte. The results from the I-V polarization curves (Tafel slope) indicated that, with the Ta2O5 thin film, the current density was significantly reduced by 3 orders of magnitude when compared with the blank sample. Such results were observed because of fully encapsulated surface of the samples were covered with the sputtered Ta2O5 thin films. The study also showed that the Ta2O5 thin film deposited at 50 nm yielded the most extreme protective performance. The Ta2O5 thin films therefore could be optimized for the smallest film thickness for highly potential role in the protective performance of the metal surface finishing products.


2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Hendrik Wulfmeier ◽  
Dhyan Kohlmann ◽  
Thomas Defferriere ◽  
Carsten Steiner ◽  
Ralf Moos ◽  
...  

Abstract The chemical expansion of Pr0.1Ce0.9O2–δ (PCO) and CeO2–δ thin films is investigated in the temperature range between 600 °C and 800 °C by laser Doppler vibrometry (LDV). It enables non-contact determination of nanometer scale changes in film thickness at high temperatures. The present study is the first systematic and detailed investigation of chemical expansion of doped and undoped ceria thin films at temperatures above 650 °C. The thin films were deposited on yttria stabilized zirconia substrates (YSZ), operated as an electrochemical oxygen pump, to periodically adjust the oxygen activity in the films, leading to reversible expansion and contraction of the film. This further leads to stresses in the underlying YSZ substrates, accompanied by bending of the overall devices. Film thickness changes and sample bending are found to reach up to 10 and several hundred nanometers, respectively, at excitation frequencies from 0.1 to 10 Hz and applied voltages from 0–0.75 V for PCO and 0–1 V for ceria. At low frequencies, equilibrium conditions are approached. As a consequence maximum thin-film expansion of PCO is expected due to full reduction of the Pr ions. The lower detection limit for displacements is found to be in the subnanometer range. At 800 °C and an excitation frequency of 1 Hz, the LDV shows a remarkable resolution of 0.3 nm which allows, for example, the characterization of materials with small levels of expansion, such as undoped ceria at high oxygen partial pressure. As the correlation between film expansion and sample bending is obtained through this study, a dimensional change of a free body consisting of the same material can be calculated using the high resolution characteristics of this system. A minimum detectable dimensional change of 5 pm is estimated even under challenging high-temperature conditions at 800 °C opening up opportunities to investigate electro-chemo-mechanical phenomena heretofore impossible to investigate. The expansion data are correlated with previous results on the oxygen nonstoichiometry of PCO thin films, and a defect model for bulk ceria solid solutions is adopted to calculate the cation and anion radii changes in the constrained films during chemical expansion. The constrained films exhibit anisotropic volume expansion with displacements perpendicular to the substrate plane nearly double that of bulk samples. The PCO films used here generate high total displacements of several 100 nm’s with high reproducibility. Consequently, PCO films are identified to be a potential core component of high-temperature actuators. They benefit not only from high displacements at temperatures where most piezoelectric materials no longer operate while exhibiting, low voltage operation and low energy consumption.


2020 ◽  
Vol 12 (8) ◽  
pp. 1125-1129
Author(s):  
Shrutidhara Sarma

In depth understanding of resistivity of metals is of utmost importance for optimizing circuit designs and electrical systems. In this study, we investigated the relation between film thickness (in the range of 25−350 nm) and film resistivity of Cu thin films, with respect to thin film temperature sensors. The films were deposited in a vacuum deposition chamber over pyrex substrates and the film resistances were measured using 4 point probe technique. The empirical relationship established by Lacy has been used along with our experimental results in order to calculate the constants relating the filmsubstrate compatibility, which influences the change of resistivity with thickness.


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