Fib/Tem Analysis of Paint Layers from Thomas Eakins' TheCrucifixion, 1880

2002 ◽  
Vol 712 ◽  
Author(s):  
Andrew Lins ◽  
Lucille A. Giannuzzi ◽  
Frederick A. Stevie ◽  
Beth Price ◽  
Mark Tucker ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Analytical Techniques ◽  
Paint Layer ◽  
Thin Layers ◽  
Chemical Cleaning ◽  
Tem Analysis ◽  
Free Zone ◽  
Thomas Eakins ◽  
Initial Work

ABSTRACTMany issues in the examination, treatment, and authentication of works of art depend on the accurate characterization of thin layers, which may challenge the resolution and detection limits of instrumentation routinely used for analyses, particularly SEM-EDS and EPMA. Such thin layers are the focus of recent conservation analysis in preparation for a major retrospective of Thomas Eakins' works. Interpretation of Eakins' paintings has often been complicated by mechanical and chemical cleaning procedures performed after the artist's death in 1916.Recent advances in Focused Ion Beam (FIB) technology provide means for preparing specimens of thin layers that can be analyzed directly by transmission electron microscopy (TEM) yielding resolution in the nanometer range or better. This paper describes initial work undertaken to elucidate the inorganic components in the uppermost paint layers from Eakins' The Crucifixion, completed in 1880. Using TEM, we have observed a 250-500 nm Pb-rich nanocrystalline region, a pigment free zone less than 2 μm thick, and a lead white paint layer. An analysis of samples from two paintings that were subjected to mild cleaning operations did not show comparable Pb-rich nanocrystals. These results suggest that The Crucifixion may have been subjected to a more aggressive cleaning treatment which caused the entrainment of the Pbrich material–not resolvable by traditional analytical techniques – at the painting's surface. The use of FIB/TEM has enabled clear identification of the thin paint surface layers and offers enormous promise for understanding the processing and alteration of artists' materials, including issues of authentication.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

Direct Plan View FIB Liftout for Near-Surface Defect Analysis in TEM

2013 ◽  
Author(s):  
Max L. Lifson ◽  
Carla M. Chapman ◽  
D. Philip Pokrinchak ◽  
Phyllis J. Campbell ◽  
Greg S. Chrisman ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Silicon Germanium ◽  
Focused Ion Beam ◽  
Surface Defects ◽  
Ion Beam ◽  
Misfit Dislocations ◽  
Tem Analysis ◽  
Plan View ◽  
Near Surface ◽  
Straightforward Method

Abstract Plan view TEM imaging is a powerful technique for failure analysis and semiconductor process characterization. Sample preparation for near-surface defects requires additional care, as the surface of the sample needs to be protected to avoid unintentionally induced damage. This paper demonstrates a straightforward method to create plan view samples in a dual beam focused ion beam (FIB) for TEM studies of near-surface defects, such as misfit dislocations in heteroepitaxial growths. Results show that misfit dislocations are easily imaged in bright-field TEM and STEM for silicon-germanium epitaxial growth. Since FIB tools are ubiquitous in semiconductor failure analysis labs today, the plan view method presented provides a quick to implement, fast, consistent, and straightforward method of generating samples for TEM analysis. While this technique has been optimized for near-surface defects, it can be used with any application requiring plan view TEM analysis.

A Methodology to Reduce Ion Beam Induced Damage in TEM Specimens Prepared by FIB

2002 ◽  
Author(s):  
Chin Kai Liu ◽  
Chi Jen. Chen ◽  
Jeh Yan.Chiou ◽  
David Su
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Tem Analysis ◽  
Sensitive Issue ◽  
Transmission Electron

Abstract Focused ion beam (FIB) has become a useful tool in the Integrated Circuit (IC) industry, It is playing an important role in Failure Analysis (FA), circuit repair and Transmission Electron Microscopy (TEM) specimen preparation. In particular, preparation of TEM samples using FIB has become popular within the last ten years [1]; the progress in this field is well documented. Given the usefulness of FIB, “Artifact” however is a very sensitive issue in TEM inspections. The ability to identify those artifacts in TEM analysis is an important as to understanding the significance of pictures In this paper, we will describe how to measure the damages introduced by FIB sample preparation and introduce a better way to prevent such kind of artifacts.

Analysis of the Intermetallic Compound Formed in Hot Dip Aluminized Steel

2006 ◽  
Vol 15-17 ◽  
pp. 159-163 ◽  
Author(s):  
Kee Hyun Kim ◽  
Benny van Daele ◽  
Gustaaf Van Tendeloo ◽  
Yong Sug Chung ◽  
Jong Kyu Yoon
Keyword(s):  
Intermetallic Compound ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Liquid Aluminium ◽  
Thin Specimen ◽  
Tem Analysis ◽  
X Ray ◽  
Cell Parameters ◽  
Transmission Electron ◽  
Aluminized Steel

A hot dip aluminising process was carried out with a 1mm steel sheet dipped into the Al-10at.% Si melt in an automatic hot-dip simulator. When steel and liquid aluminium are in contact with each other, a thin intermetallic compound (IMC) is formed between the steel and the aluminium. The analysis and identification of the formation mechanism of the IMC is needed to manufacture the application products. Energy dispersive X-ray spectroscopy (EDX) and electron probe microanalysis (EPMA) are normally used to identify the phases of IMC. In the Al-Fe-Si system, numerous compounds with only slight differences in composition are formed. Consequently, EDX and EPMA are insufficient to confirm exactly the thin IMC with multiphases. In this study, transmission electron microscopy (TEM) analysis combined with EDX was used. The TEM sample was prepared with focused ion beam (FIB) sampling. The FIB lift-out technology is used to slice a very thin specimen with minimum contamination for TEM analysis. It is clearly shown that the IMC consists of Al-27 at. % Fe-10 at. % Si and is identified as Al8Fe2Si with a hexagonal unit cell (space group P63/mmc). The cell parameters are a= 1.2404nm and c= 2.6234nm.

Comparison of Precision XTEM Specimen Preparation Techniques for Semiconductor Failure Analysis

1997 ◽  
Vol 3 (S2) ◽  
pp. 357-358
Author(s):  
C. Amy Hunt
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Mechanical Polishing ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Tem Analysis ◽  
The Past ◽  
Preparation Techniques

The demand for TEM analysis in semiconductor failure analysis is rising sharply due to the shrinking size of devices. A well-prepared sample is a necessity for getting meaningful results. In the past decades, a significant amount of effort has been invested in improving sample preparation techniques for TEM specimens, especially precision cross-sectioning techniques. The most common methods of preparation are mechanical dimpling & ion milling, focused ion beam milling (FIBXTEM), and wedge mechanical polishing. Each precision XTEM technique has important advantages and limitations that must be considered for each sample.The concept for both dimpling & ion milling and wedge specimen preparation techniques is similar. Both techniques utilize mechanical polishing to remove the majority of the unwanted material, followed by ion milling to assist in final polishing or cleaning. Dimpling & ion milling produces the highest quality samples and is a relatively easy technique to master.

Focused Ion Beam Milling and Micromanipulation Lift-Out for Site Specific Cross-Section Tem Specimen Preparation

1997 ◽  
Vol 480 ◽  
Author(s):  
L. A. Giannuzzi ◽  
J. L. Drown ◽  
S. R. Brown ◽  
R. B. Irwin ◽  
F. A. Stevie
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specific Area ◽  
Specimen Preparation ◽  
Tem Analysis ◽  
Site Specific ◽  
Area Of Interest ◽  
Carbon Coated ◽  
A Site

AbstractA site specific technique for cross-section transmission electron microscopy specimen preparation of difficult materials is presented. Focused ion beams are used to slice an electron transparent sliver of the specimen from a specific area of interest. Micromanipulation lift-out procedures are then used to transport the electron transparent specimen to a carbon coated copper grid for subsequent TEM analysis. The experimental procedures are described in detail and an example of the lift-out technique is presented.

Formation of Defects in MBE Re-Grown GaAs Films on GaAs/AlGaAs Heterostructures

2002 ◽  
Vol 744 ◽  
Author(s):  
M. Lamberti ◽  
V. Tokranov ◽  
R. Moore ◽  
M. Yakimov ◽  
A. Katsnelson ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Defect Formation ◽  
Defect Density ◽  
Ion Beam ◽  
Stacking Faults ◽  
Tem Analysis ◽  
Planar Defects ◽  
Site Specific ◽  
Al Content ◽  
Gaas Films

ABSTRACTIn the present work, we examine the formation of defects on the sidewall slope in 1 μm - thick GaAs layers regrown on GaAs/AlGaAs heterostructures. Site-specific TEM specimens of sidewall slopes are obtained using focused ion beam combined with lift-out method. TEM analysis shows planar defects, such as stacking faults and microtwins, dislocations and large twinned areas, nucleating on the AlGaAs surfaces. SIMS and EDX reveal an increase in carbon and oxygen at the interface. The defect density increased with Al content exceeding 1010 cm-2 on Al0.4Ga0.6As. The defect formation is related to the oxidation of Al-containing surfaces.

TEM FIB Lift-Out of Mount Saint Helens Volcanic Ash

1999 ◽  
Vol 5 (S2) ◽  
pp. 908-909
Author(s):  
J.L. Drown-MacDonald ◽  
B.I. Prenitzer ◽  
T.L. Shofner ◽  
L.A. Giannuzzi
Keyword(s):  
Cross Sections ◽  
Volcanic Ash ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Tem Analysis ◽  
Plan View ◽  
Transmission Electron ◽  
Silver Paint

Focused Ion Beam (FIB) specimen preparation for both scanning and transmission electron microscopy (SEM and TEM respectively) has seen an increase in usage over the past few years. The advantage to the FIB is that site specific cross sections (or plan view sections) may be fabricated quickly and reproducibly from numerous types of materials using a finely focused beam of Ga+ ions [1,2]. It was demonstrated by Prenitzer et al. that TEM specimens may be acquired from individual Zn powder particles by employing the FIB LO specimen preparation technique [3]. In this paper, we use the FIB LO technique to prepare TEM specimens from Mount Saint Helens volcanic ash.Volcanic ash from Mount Saint Helens was obtained at the Microscopy and Microanalysis 1998 meeting in Atlanta. TEM analysis of the ash was performed using the FIB lift out technique [1]. Ash powders were dusted onto an SEM sample stud that had been coated with silver paint.

Magnetic Head Shorting Failure Analysis

2017 ◽  
Author(s):  
Liang Hong ◽  
Jia Li ◽  
Haifeng Wang
Keyword(s):  
Electron Microscopy ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Resistance Change ◽  
Root Cause ◽  
Transmission Electron ◽  
Root Cause Failure Analysis ◽  
Metal Layers

Abstract This paper provides an innovative root cause failure analysis method that combines multiple failure analysis (FA) techniques to narrow down and expose the shorting location and allow the material analysis of the shorting defect. It begins with a basic electrical testing to narrow down shorting metal layers, then utilizing mechanical lapping to expose over coat layers. This is followed by optical beam induced resistance change imaging to further narrow down the shorting location. Scanning electron microscopy and optical imaging are used together with focused ion beam milling to slice and view through the potential shorting area until the shorting defect is exposed. Finally, transmission electron microscopy (TEM) sample is prepared, and TEM analysis is carried out to pin point the root cause of the shorting. This method has been demonstrated successfully on Western Digital inter-metal layers shorting FA.

Identification of an IDDQ Failure Mechanism Using a Variety of Front and Backside Analytical Techniques

2003 ◽  
Author(s):  
Jim Shearer ◽  
Kim Le ◽  
Xiaoyu Yang ◽  
Monty Cleeves ◽  
Al Meeks
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
Metal Layer ◽  
Ion Beam ◽  
Photon Emission ◽  
Analytical Techniques ◽  
Cmos Process ◽  
Microscopy Imaging ◽  
Leakage Path ◽  
Dual Beam

Abstract This article presents a case study to solve an IDDQ leakage problem using a variety of failure analysis techniques on a product. The product is fabricated using a 3-metal-layer 0.25 μm CMOS process with the addition of Matrix's proprietary 3-D memory layers. The failure analysis used both top and backside analytical techniques, including liquid crystal, photon emission microscopy from both front and back, dual-beam focused ion beam cross-sectioning, field emission scanning electron microscopy imaging, parallel-lap/passive voltage contrast, microprobing of parallel-lapped samples, and scanning capacitance microscopy. The article discusses how the application of each of the techniques narrowed down the search for this IDDQ leakage path. This leakage path was eliminated using the two corrective actions: The resist is pre-treated prior to ion implantation to produce a consistent resist sidewall profile; and the Nwell boundaries were adjusted in the next Nwell mask revision.

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