Highly conductive and transparent Ti-doped zinc oxide thin films

2003 ◽  
Vol 769 ◽  
Author(s):  
Yang-Ming Lu ◽  
Shu-I Tsai ◽  
Chen-Min Chang
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Zno Films ◽  
Zno Thin Film ◽  
Scientific Interest ◽  
Zno Film ◽  
Glass Substrates ◽  
Dc Power ◽  
Visible Transmittance ◽  
Ti Doping

AbstractThe properties of ZnO thin film are currently of great commercial and scientific interest due to its particular properties such as highly conductive, transparent as well as chemical stability and nontoxic. The Ti doping ZnO thin films were deposited by simultaneously magnetron co-sputtering from both Zn and Ti targets in a mixture of oxygen and argon gases onto heated Corning 7059 glass substrates in this study. The experimental results show that deposition rate of ZnO films are strongly dependent on DC power of Ti target. The growth rate initially increases and changes to decrease when the DC power of Ti target further rises. The content of Ti in the ZnO films increases with the applied DC power of Ti target. The lattice constant of ZnO (002) increases with DC power of Ti target due to incorporated Ti into the lattice of ZnO. The crystalline size becomes smaller when the DC power of Ti target was raised. The visible transmittance is a little lowered when slight Ti incorporated but still average maintains above 80%. The lowest resistivity of undoped ZnO film obtained in this study is 4.14×10-3 ohm-cm and further decreased to 1.02×10-3 ohm-cm after being doped a trace of Ti.

Effects of Annealing Atmosphere on the Optoelectrical Properties of ZnO Thin Films Grown by Atomic Layer Deposition

2006 ◽  
Vol 510-511 ◽  
pp. 670-673 ◽  
Author(s):  
Chong Mu Lee ◽  
Yeon Kyu Park ◽  
Anna Park ◽  
Choong Mo Kim
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Xrd Analysis ◽  
Nitrogen Atmosphere ◽  
Zno Thin Films ◽  
Zno Films ◽  
Annealing Atmosphere ◽  
Zno Film ◽  
Layer Deposition

This paper investigated the effects of annealing atmosphere on the carrier concentration, carrier mobility, electrical resistivity, and PL characteristics as well as the crystallinity of ZnO films deposited on sapphire substrates by atomic layer deposition (ALD). X-ray diffraction (XRD) and photoluminescence (PL) analyses, and Hall measurement were performed to investigate the crystallinity, optical properties and electrical properties of the ZnO thin films, respectively. According to the XRD analysis results, the crystallinity of the ZnO film annealed in an oxygen atmosphere is better than that of the ZnO film annealed in a nitrogen atmosphere. It was found that annealing undoped ZnO films grown by ALD at a high temperature above 600°C improves the crystallinity and enhances UV emission.

scholarly journals EPR Spectroscopy of Different Sol Concentration Synthesized Nanocrystalline-ZnO Thin Films

2015 ◽  
Vol 2015 ◽  
pp. 1-7 ◽  
Author(s):  
Manju Arora ◽  
Rayees A. Zargar ◽  
S. D. Khan
Keyword(s):  
Thin Films ◽  
Oxygen Vacancies ◽  
Film Surface ◽  
Epr Spectra ◽  
Zno Thin Films ◽  
Zno Films ◽  
Zno Film ◽  
Resonance Signal ◽  
X Ray ◽  
Impurity Defects

Nanocrystalline zinc oxide (nc-ZnO) thin films were grown on p-type silicon substrate through spin coating by sol-gel process using different sol concentrations (10 wt.%, 15 wt.%, and 25 wt.%). These films were characterized by high resolution nondestructive X-ray diffraction (XRD), scanning electron microscopy (SEM) with energy dispersive X-ray analysis (EDS) attachment, and electron paramagnetic resonance (EPR) techniques to understand variations in structural, morphological, and oxygen vacancy with respect to sol concentration. The film surface morphology changes from nanowall to nanorods on increasing sol concentration. EPR spectra revealed the systematic variation from ferromagnetic to paramagnetic nature in these nc-ZnO films. The broad EPR resonance signal arising from the strong dipolar-dipolar interactions among impurity defects present in nc-ZnO film deposited from 10 wt.% sol has been observed and a single strong narrow resonance signal pertaining to oxygen vacancies is obtained in 25 wt.% sol derived nc-ZnO film. The concentrations of impurity defects and oxygen vacancies are evaluated from EPR spectra, necessary for efficient optoelectronic devices development.

scholarly journals Optical Properties and Raman Scattering Investigation of Ag Doped ZnO Thin Film Prepared by Two-Step Solution-Based Deposition Method

2015 ◽  
Vol 773-774 ◽  
pp. 739-743
Author(s):  
A.N. Afaah ◽  
N.A.M. Asib ◽  
Aadila Aziz ◽  
Ruziana Mohamed ◽  
Kevin Alvin Eswar ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Scattering ◽  
Ultra Violet ◽  
Peak Shift ◽  
Zno Thin Films ◽  
Zno Films ◽  
Deposition Method ◽  
Immersion Method ◽  
Glass Substrates ◽  
Doped Zno

Mist-atomization deposition method was applied in order to grow ZnO nanoparticles on Au-seeded glass substrates acting as seeded template. Ag doped ZnO thin films were deposited on ZnO seeded templates by solution-immersion method. The influence of Ag doping content on the optical and Raman scattering properties of ZnO films were systematically investigated by UV-Vis transmittance measurement measured by ultra-violet visible spectroscopy (UV-Vis) and Raman scattering spectrum measured by Raman spectroscopy under room temperature. From UV-Vis transmittance measurement, the incorporation of Ag dopant to the ZnO makes the transmittance wavelength shifted to the shorter wavelength as compared to the pure ZnO. From Raman spectra, 4 cm-1 downshift is observed in Ag-doped thin films as compared to pure ZnO thin films. This Raman peak shift shows that a tensile stress existed in the Ag-doped ZnO film.

Microstructures and Photoluminescence of Electrochemically-Deposited ZnO Films on Porous Silicon and Silicon

2013 ◽  
Vol 538 ◽  
pp. 30-33 ◽  
Author(s):  
Lan Li Chen ◽  
Zhong Ke Tang ◽  
Ming Ji Shi
Keyword(s):  
Thin Films ◽  
Porous Silicon ◽  
Chloride Solution ◽  
Luminous Intensity ◽  
Zno Thin Films ◽  
Zno Films ◽  
Photoluminescence Spectra ◽  
Zno Film ◽  
Zinc Chloride Solution ◽  
Electrochemically Deposited

ZnO films covered with microrods were grown on silicon and porous silicon through electrochemical deposition with silicon or porous silicon as cathode, a platinum wire as anode, and zinc chloride solution of 0.05mol/L as electrolyte. The morphologies by SEM and the crystal structures by XRD were studied. The photoluminescence spectra were also measured. And the mechanisms of the growth and the photoluminescence of the ZnO thin films were analyzed and compared. Studies showed that the luminous intensity of ZnO thin films is different under different conditions, but its peak is located between 370-385nm, luminous intensity of the ZnO film deposited on porous silicon and then annealed is weaker.

scholarly journals Effect of thickness on the optical properties of ZnO thin films prepared by pulsed laser deposition technique (PLD)

2019 ◽  
Vol 15 (32) ◽  
pp. 114-121
Author(s):  
Maysar A. Salim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Film Thickness ◽  
Energy Gap ◽  
Transparent Conducting Oxide ◽  
Zno Thin Films ◽  
Zno Films ◽  
Zno Thin Film ◽  
Optical Energy Gap

Zinc Oxide (ZnO) thin films of different thickness were preparedon ultrasonically cleaned corning glass substrate, by pulsed laserdeposition technique (PLD) at room temperature. Since mostapplication of ZnO thin film are certainly related to its opticalproperties, so the optical properties of ZnO thin film in thewavelength range (300-1100) nm were studied, it was observed thatall ZnO films have high transmittance (˃ 80 %) in the wavelengthregion (400-1100) nm and it increase as the film thickness increase,using the optical transmittance to calculate optical energy gap (Egopt)show that (Egopt) of a direct allowed transition and its value nearlyconstant (~ 3.2 eV) for all film thickness (150, 180, 210, and 240)nm, so Zn0 thin films were used as a transparent conducting oxide(TCO) in various optoelectronic application such as a window in athin film solar cells.

Room-Temperature Deposition of ZnO Thin Films by Using DC Magnetron Sputtering

2014 ◽  
Vol 896 ◽  
pp. 237-240 ◽  
Author(s):  
Putut Marwoto ◽  
Sulhadi ◽  
Sugianto ◽  
Didik Aryanto ◽  
Edy Wibowo ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Film Growth ◽  
Transparent Conductive Oxide ◽  
Zno Thin Films ◽  
Zno Films ◽  
Plasma Power ◽  
Zno Film ◽  
Dc Magnetron Sputtering

ZnO thin films have successfully been deposited using DC magnetron sputtering at room temperature by means of plasma power variation. XRD results show that films were grown at a plasma power of 30 W and 40 W are polycrystalline, while at 20 W is considered as amorphous. The optical bandgap of films are shrinkage by increasing the plasma power. The broadest transmittance range is belongs to ZnO film growth at plasma power of 40 W. The electrical conductivity of ZnO films increase from 4.02x10-7(Ωcm)-1to 8.92x10-7(Ωcm)-1once the plasma power is increased. Based on the electrical and optical properties of the films it clearly be seen that ZnO film grown at plasma power of 40 W has highest transmittance and lower electrical resistivity therefore it appropriate for transparent conductive oxide (TCO).

CHARACTERIZATION OF n AND p TYPE ZNO THIN FILMS DEPOSITED BY CATHODIC PULSED FILTERED VACUUM ARC SYSTEM

2009 ◽  
Vol 23 (06n07) ◽  
pp. 1719-1724
Author(s):  
H. KAVAK ◽  
N. H. ERDOGAN ◽  
K. KARA ◽  
H. YANIS ◽  
Z. BAZ ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Wavelength Region ◽  
Zno Thin Films ◽  
Vacuum Arc ◽  
Zno Films ◽  
Zno Thin Film ◽  
Xrd Pattern ◽  
Zinc Nitride ◽  
P Type

The transparent, conductive n and p -type semiconducting ZnO thin films were prepared by pulsed filtered cathodic vacuum arc deposition (PFCVAD) method. The structural, optical and electrical properties of n and p -type ZnO thin films are investigated after annealing at 450°C. 197 nm thick n -type ZnO thin film was deposited with oxygen pressure of 8.5 × 10-4 Torr . XRD pattern of annealed ZnO thin film exhibits hexagonal structure with (100), (101) and (110) orientations. The crystallite size of semiconductor ZnO thin film is 18 nm, interplanar distance 0.16 nm and lattice constant c is 0.52 nm for (110) orientation. The optical transmittance spectra of n and p -type ZnO films are over 90% in the visible wavelength region with optical energy gap 3.3 eV. p -type ZnO thin films are produced by oxidation of PFCVAD deposited zinc nitride. Zinc nitride is deposited with nitrogen pressure of 8.6 × 10-4 Torr and the thickness of this film is 179 nm. The oxidation of zinc nitride thin films at 450°C results in hexagonal structures p -type ZnO thin films. XRD pattern of this film has the same (100), (101) and (110) orientations with the same crystalline structures as the directly deposited ZnO thin film. Hall measurements indicated that ZnO films were p -type and the highest carrier concentration of 1.08 × 1018 cm -3 and mobility of 93.53 cm2/Vs were obtained.

Structural, Optical and Electrical Properties of Multiple Layers Nano-Structured Zinc Oxide Thin Film

2015 ◽  
Vol 1109 ◽  
pp. 401-404
Author(s):  
I. Saurdi ◽  
Mohamad Hafiz Mamat ◽  
M.F. Malik ◽  
A. Ishak ◽  
Mohamad Rusop
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Thickness ◽  
Visible Region ◽  
Oxide Thin Film ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Thin Film Thickness ◽  
Glass Substrates ◽  
Average Transmittance

The nanoStructured ZnO thin films were prepared by Spin coating technique on glass substrates at various layers. The structural and optical properties were characterized by field emission scanning electron microscopy (FESEM) and UV-Vis-NIR respectively. The surface morphology reveals that the nanostructured ZnO thin films become densely packed as the thickness increased. The average particles size of ZnO thin film estimated from FESEM images at different layers of 1, 3, 5, 7, 9 were 20nm, 28nm, 36nm, 39nm and 56nm, respectively. The surface roughness of thin films was increase as the thin film thickness increases. The results show all films are transparent in the visible region (400-800 nm) with average transmittance above 85 %. Meanwhile, the optical band gap was decrease as the film thickness increases. The conductivity of ZnO thin film slightly improved as the thickness increased as measured through two probes 1-V measurement system.

Ultra-Violet Photoresponse Characteristics of Nanostructured Al Doped Zinc Oxide Thin Films Based Ultra-Violet Sensor

2013 ◽  
Vol 667 ◽  
pp. 569-572
Author(s):  
S.Z. Muhamed ◽  
Mohamad Hafiz Mamat ◽  
N.D. Md Sin ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Ultra Violet ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Glass Substrates ◽  
Measurement Results ◽  
Doped Zno ◽  
Photocurrent Measurement ◽  
Uv Sensors

Nanostructured Aluminum (Al) doped Zinc Oxide (ZnO) thin films based ultra-violet (UV) sensors were prepared on glass substrates using immersion technique at different immersion times. Surface morphology results as characterized by scanning electron microscope (SEM) show that all prepared nanostructured Al doped ZnO were in form of nanorod structures with the typical diameter in the range of 60-250nm and the length within several micrometers. Photocurrent measurement results of the fabricated UV photoconductive sensor from nanostructured Al doped ZnO thin film immersed at 1 hr gives the highest photocurrent intensity compared with other samples.

scholarly journals Effect of substrate temperature on structural and optical properties of spray deposited ZnO thin films

2015 ◽  
Vol 33 (3) ◽  
pp. 491-496 ◽  
Author(s):  
Y. Larbah ◽  
M. Adnane ◽  
T. Sahraoui
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Energy Gap ◽  
Zno Thin Films ◽  
Effect Of Temperature ◽  
Zno Films ◽  
Spray Pyrolysis Method ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Substrate Temperatures

Abstract Undoped ZnO thin films have been prepared on glass substrates at different substrate temperatures by spray pyrolysis method. The effect of temperature on the structural, morphological and optical properties of n-type ZnO films was studied. The X-ray diffraction (XRD) results confirmed that the ZnO thin films were polycrystalline with wurtzite structure. Scanning electron microscopy (SEM) measurements showed that the surface morphology of the films changed with temperature. The studies demonstrated that the ZnO film had a transmission of about 85 % and energy gap of 3.28 eV at 450 °C. The RBS measurements revealed that ZnO layers with a thickness up to 200 nm had a good stoichiometry.

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