(A)thermal migration of Ge during junction formation in s-Si layers grown on thin SiGebuffer layers

2004 ◽  
Vol 809 ◽  
Author(s):  
W. Vandervorst ◽  
B.J. Pawlak ◽  
T. Janssens ◽  
B. Brijs ◽  
R. Delhougne ◽  
...  
Keyword(s):  
Activation Energy ◽  
Distribution Function ◽  
Solid Phase ◽  
Silicon Layer ◽  
Damage Distribution ◽  
Strained Si ◽  
Advanced Technologies ◽  
Epitaxial Regrowth ◽  
Junction Formation ◽  
Determining Factor

ABSTRACTSolid phase epitaxial regrowth (SPER) has been proven to be highly advantageous for ultra shallow junction formation in advanced technologies. Application of SPER to strained Si/SiGe structures raises the concern that the Ge may out diffuse during the implantation and/or anneal steps and thus reduce the strain in the top silicon layer.In the present studies we expose 8-30 nm strained silicon layers grown on thin relaxed SiGe-buffers, to implant conditions and anneal cycles, characteristic for formation of the junctions by solid phase epitaxial regrowth and conventional spike activation. The resulting Geredistribution is measured using SIMS. Based on the outdiffused Ge-profiles the Ge-diffusion coefficient has been determined in the temperature range of 800-1100C from which an activation energy of ∼ 3.6 eV can be deduced. Up to 1050 C, 10 min, even a 30 nm strained film remains highly stable and shows only very moderate outdiffusion.We also have observed a far more efficient, athermal Ge-redistribution process linked to the implantation step itself. This was studied by analysing the Ge-redistribution following an Asimplant (2-15 keV, 5 1014 – 3 1015 at/cm2). It is shown that the energy of the implant species (or more specifically the position of the damage distribution function relative to the Ge-edge) plays a determining factor with respect to the Ge-migration. For implants whereby the damage distribution overlaps with the Ge-edge, a very efficient transport of the Ge is observed, even prior to any anneal cycle. The migration is entirely correlated with the collision cascade and the resulting (forward!) Ge-recoil distribution. The scaling with dose for a given energy links the observed Ge-profile with a broadening mechanism related to the number of atom displacements induced in the sample within the vicinity of the Si-SiGe-transition.

Precision measurements of the effect of implanted boron on silicon solid phase epitaxial regrowth

1988 ◽  
Vol 3 (2) ◽  
pp. 298-308 ◽  
Author(s):  
Won Woo Park ◽  
M. F. Becker ◽  
R. M. Walser
Keyword(s):  
Activation Energy ◽  
Critical Temperature ◽  
Solid Phase ◽  
Laser Interferometry ◽  
Thermal Fluctuations ◽  
Solubility Limit ◽  
Activation Entropy ◽  
Epitaxial Regrowth ◽  
Sample Technique ◽  
Differential Increase

The epitaxial recrystallization rates of self-ion amorphitized layers in silicon wafers with 〈100〉 substrate orientation were measured by in situ, high precision, isothermal cw laser interferometry. With this one-sample technique the changes produced by implanted boron impurity concentrations (NB) in the activation energy Ea and preexponential V0 of solid phase epitaxy were measured for concentrations in the range 5 × 1018 cm−3 < NB < 3 × 1020 cm−3 and for temperatures from 450 to 550°C. The differential changes in Ea produced were measured to within ± 23 meV when systematic errors were eliminated. Changes in activation energy and entropy [Ea and log (V0)] were found to be linearly correlated for all concentrations. This observation is consistent with the idea that electronically active impurities alter regrowth velocities by reducing the critical temperature for disordering at some of the interfacial sites at which elementary reconstructive processes are driven by thermal fluctuations. For small Nn, the critical temperature of the impurity-modified reconstruction is estimated at 1200K, approximately 200 K below the melting temperature of amorphous silicon. The Ea decreased exponentially with NB to a concentration Ninfl, larger than the estimated equilibrium solubility limit, where there was an inflection point in the V vs NB curve. The Ea increased for values of NB larger than Ninfl, showing that the differential increase in V for higher concentrations was due to a differential increase in the activation entropy. A change in the correlation between Ea and log (V0) at Ninfl indicated that larger NB produced an additional reduction of the critical temperature of the reconstruction. For small NB, the data support a simple Fermi level shifting model for the “electronic effect” of impurities on SPE (solid phase epitaxial) regrowth.

Athermal germanium migration in strained silicon layers during junction formation with solid-phase epitaxial regrowth

2005 ◽  
Vol 86 (8) ◽  
pp. 081915 ◽  
Author(s):  
W. Vandervorst ◽  
T. Janssens ◽  
B. Brijs ◽  
R. Delhougne ◽  
R. Loo ◽  
...  
Keyword(s):  
Solid Phase ◽  
Strained Silicon ◽  
Epitaxial Regrowth ◽  
Junction Formation

Solid-Phase Epitaxy of Ti-Implanted LiNbO3

1987 ◽  
Vol 93 ◽  
Author(s):  
D. B. Poker
Keyword(s):  
Activation Energy ◽  
Optical Waveguides ◽  
Solid Phase ◽  
Complete Removal ◽  
Liquid Nitrogen Temperature ◽  
Index Of Refraction ◽  
Optical Index ◽  
Epitaxial Regrowth ◽  
Residual Damage ◽  
Water Saturated

ABSTRACTThe implantation of Ti into LiNbO3 has been studied as a means of altering the optical index of refraction to produce optical waveguides. Implanting 2 × 1017 atoms/cm2 of 360-keV Ti at liquid nitrogen temperature produces a highly damaged region extending to a depth of about 4000 Å. Solid-phase epitaxial regrowth of the LiNbO3 can be achieved by annealing in a water-saturated oxygen atmosphere at 400°C, though complete removal of the residual damage usually requires temperatures in excess of 800°C. The solid-phase epitaxial regrowth rate exhibits an activation energy of 2 eV at doses below 3 × 1016 Ti/cm2, but both the regrowth rate and activation energy decrease at higher doses. At doses above 1 × 1017 Ti/cm2, the solid-phase epitaxial regrowth occurs only at temperatures above 800°C.

Sb Implantation in Si1–xGex/Si(100) Structures

1991 ◽  
Vol 235 ◽  
Author(s):  
Z. Atzmon ◽  
M. Eizenberg ◽  
P. Revesz ◽  
J. W. Mayer ◽  
F. Schäffler
Keyword(s):  
Short Distance ◽  
Room Temperature ◽  
Solid Phase ◽  
Amorphous Layer ◽  
Strained Si ◽  
Si Substrates ◽  
Epitaxial Regrowth ◽  
Heat Treated ◽  
Significant Difference ◽  
Initial Process

ABSTRACTSolid phase epitaxial regrowth of Sb implanted strained Si1−x Gex alloy layers is reported. Two sets of Si1–xGex alloys with compositions of x=0.08 and x=0.18, MBE grown on (100)Si substrates, were implanted at room temperature with Sb− ions at energies of 200 and 100 keV, respectively, and a dose of 1015cm−2. These alloys were heat-treated in a rapid thermal annealing system at temperatures of 525, 550 and 575°C for durations between 5 and 600 sec. The study of the solid phase epitaxial regrowth was performed by Rutherford backscattering in the channeling mode. The measurements show a significant difference in the regrowth mechanism between the two alloys. For the Si0.92Ge0.00 alloy a fast regrowth process (faster than for Sb implanted Si or Si implanted SiGe layers) occured with an activation energy of 2.92±0.2eV. For the Si0.02Ge0.10 alloy the regrowth took place in two steps: a) a very fast initial process over a short distance, b) a regrowth process of the majority of the amorphous layer.

Modeling and Simulation of the Influence of SOI Structure on Damage Evolution and Ultra-shallow Junction Formed by Ge Preamorphization Implants and Solid Phase Epitaxial Regrowth

2006 ◽  
Vol 912 ◽  
Author(s):  
Caroline Mok ◽  
B. Colombeau ◽  
M. Jaraiz ◽  
P. Castrillo ◽  
J. E. Rubio ◽  
...  
Keyword(s):  
Damage Evolution ◽  
Solid Phase ◽  
Kinetic Monte Carlo ◽  
Silicon On Insulator ◽  
Bulk Silicon ◽  
Shallow Junction ◽  
Defect Interaction ◽  
Epitaxial Regrowth ◽  
Junction Formation ◽  
Ultra Shallow Junctions

AbstractPreamorphization implant (PAI) prior to dopant implantation, followed by solid phase epitaxial regrowth (SPER) is of great interest due to its ability to form highly-activated ultra-shallow junctions. Coupled with growing interest in the use of silicon-on-insulator (SOI) wafers, modeling and simulating the influence of SOI structure on damage evolution and ultra-shallow junction formation is required. In this work, we use a kinetic Monte Carlo (kMC) simulator to model the different mechanisms involved in the process of ultra-shallow junction formation, including amorphization, recrystallization, defect interaction and evolution, as well as dopant-defect interaction in both bulk silicon and SOI. Simulation results of dopant concentration profiles and dopant activation are in good agreement with experimental data and can provide important insight for optimizing the process in bulk silicon and SOI.

In Situ Tem Studies of The Growth of Strained Si1-xGex By Solid Phase Epitaxy

1990 ◽  
Vol 202 ◽  
Author(s):  
D. C. Paine ◽  
D. J. Howard ◽  
N. D. Evans ◽  
D. W. Greve ◽  
M. Racanelli ◽  
...  
Keyword(s):  
Activation Energy ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Surface Region ◽  
In Situ Tem ◽  
Solid Phase Epitaxy ◽  
Near Surface ◽  
Strained Layer ◽  
Epitaxial Regrowth

ABSTRACTIn this paper we report on the epitaxial growth of strained thin film Si1-xGex on Si by solid phase epitaxy. For these solid phase epitaxy experiments, a 180-nm-thick strained-layer of Si1-xGex with xGe=11.6 at. % was epitaxially grown on <001> Si using chemical vapor deposition. The near surface region of the substrate, including the entire Si1-xGex film, was then amorphized to a depth of 380 nm using a two step process of 100 keV, followed by 200 keV, 29Si ion implantation. The epitaxial regrowth of the alloy was studied with in situ TEM heating techniques which enabled an evaluation of the activation energy for strained solid phase epitaxial regrowth. We report that the activation energy for Si1-xGex (x=l 1.6 at. %) strained-layer regrowth is 3.2 eV while that for unstrained regrowth of pure Si is 2.68 eV and that regrowth in the alloy is slower than in pure Si over the temperature range 490 to 600°C.

Analysis and Optimisation of New Implantation and Activation Mechanisms in Ultra Shallow Junction Implants using Scanning Spreading Resistance Microscopy (SSRM)

2006 ◽  
Vol 912 ◽  
Author(s):  
Pierre Eyben ◽  
Simone Severi ◽  
Ray Duffy ◽  
Bartek Pawlak ◽  
Emmanuel Augendre ◽  
...  
Keyword(s):  
Solid Phase ◽  
Lateral Diffusion ◽  
Spreading Resistance ◽  
Mos Devices ◽  
Epitaxial Regrowth ◽  
Junction Formation ◽  
Activation Mechanisms ◽  
Spike Annealing ◽  
The Impact ◽  
Millisecond Laser

AbstractWithin this paper we have demonstrated the unique capability of scanning spreading resistance microscopy (SSRM) in order to evaluate and optimize the recent approaches towards the formation of advanced p-MOS devices. As shown in this paper, such an optimization requires a detailed 2D-analysis on completely processed devices as two-dimensional interactions may cause (unexpected) lateral diffusion and (de) activation of underlying profiles. Emphasis will be on junction formation using Ge- pre-amorphization and carbon based cocktail implantation coupled with activation based on solid phase epitaxial regrowth and/or millisecond laser anneal. In the case of a Ge-pre-amorphization implant followed by solid phase epitaxial regrowth, SSRM shows an obvious relationship between the presence of defects in the end of range region and halo implant de-activation. Based on the quantified 2D-profiles we can extract the lateral and vertical junction depths as well as the lateral and vertical abruptness of the extension region. A drastic reduction of the lateral diffusion for the cocktail implant versus the standard reference devices with classical spike annealing is eminent. At the same an important reduction of the lateral diffusion of the source/drain implants (HDD) under the spacer can be seen. The SSRM results also highlight the impact of different activation mechanisms on the channel implants (in particular on the shape of the halo pockets).

The Role of Preamorphization and Activation for Ultra Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer

2004 ◽  
Vol 809 ◽  
Author(s):  
B.J. Pawlak ◽  
W. Vandervorst ◽  
R. Lindsay ◽  
I. De Wolf ◽  
F. Roozeboom ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
Solid Phase ◽  
Cmos Technology ◽  
Strained Si ◽  
Transistor Channel ◽  
Thermal Budget ◽  
Dopant Activation ◽  
Junction Formation ◽  
Technology Nodes

In advanced CMOS technology nodes one may achieve further enhancement of device performance by carrier mobility modification in the transistor channel. The carrier mobility enhancement can be realized by formation of strained silicon layers on a Si1−xGex strain relaxed buffer. Formation of source and drain extensions on such structures need to satisfy one additional requirement, the formation process, including the activation related thermal budget should not relax the strain in the channel. In this paper we separately investigate the role of amorphization during implantation, different doping impurities and thermal budget on the junction and the transistor channel regions properties. Two approaches of dopant activation are discussed: low temperature solid phase epitaxial regrowth and high temperature conventional spike.

Silicon Carbide Recrystallization Mechanism by Non-Equilibrium Melting Laser Anneal

2016 ◽  
Vol 858 ◽  
pp. 540-543 ◽  
Author(s):  
Fulvio Mazzamuto ◽  
Sebastien Halty ◽  
Yoshihiro Mori
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Electron Diffraction ◽  
Solid Phase ◽  
Silicon Layer ◽  
Recrystallization Mechanism ◽  
Epitaxial Regrowth ◽  
Laser Anneal ◽  
Melt Annealing

We have demonstrated the possibility for epitaxial regrowth of crystalline SiC by laser melt annealing. The quality of the recrystallization is analyzed by XTEM, EELS, electron diffraction and XRD. The annealing guarantees a uniform activation achieved both in melting and solid phase. Carbon graphitization on the top surface and a crystallized silicon layer below is observed as an effect of the high temperature and the melting phase.

High Temperature n- and p-type Doped Microcrystalline Silicon Layers Grown by VHF PECVD Layer-by-Layer Deposition

2003 ◽  
Vol 762 ◽  
Author(s):  
A. Gordijn ◽  
J.K. Rath ◽  
R.E.I. Schropp
Keyword(s):  
Activation Energy ◽  
High Temperature ◽  
High Temperatures ◽  
Continuous Wave ◽  
Hydrogen Plasma ◽  
Silicon Layer ◽  
Dark Conductivity ◽  
High Deposition Rate ◽  
Layer By Layer ◽  
Microcrystalline Silicon

AbstractDue to the high temperatures used for high deposition rate microcrystalline (μc-Si:H) and polycrystalline silicon, there is a need for compact and temperature-stable doped layers. In this study we report on films grown by the layer-by-layer method (LbL) using VHF PECVD. Growth of an amorphous silicon layer is alternated by a hydrogen plasma treatment. In LbL, the surface reactions are separated time-wise from the nucleation in the bulk. We observed that it is possible to incorporate dopant atoms in the layer, without disturbing the nucleation. Even at high substrate temperatures (up to 400°C) doped layers can be made microcrystalline. At these temperatures, in the continuous wave case, crystallinity is hindered, which is generally attributed to the out-diffusion of hydrogen from the surface and the presence of impurities (dopants).We observe that the parameter window for the treatment time for p-layers is smaller compared to n-layers. Moreover we observe that for high temperatures, the nucleation of p-layers is more adversely affected than for n-layers. Thin, doped layers have been structurally, optically and electrically characterized. The best n-layer made at 400°C, with a thickness of only 31 nm, had an activation energy of 0.056 eV and a dark conductivity of 2.7 S/cm, while the best p-layer made at 350°C, with a thickness of 29 nm, had an activation energy of 0.11 V and a dark conductivity of 0.1 S/cm. The suitability of these high temperature n-layers has been demonstrated in an n-i-p microcrystalline silicon solar cell with an unoptimized μc-Si:H i-layer deposited at 250°C and without buffer. The Voc of the cell is 0.48 V and the fill factor is 70 %.

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