High-Power High-Temperature Heterobipolar TransistorWith Gallium Nitride Emitter

1996 ◽  
Vol 1 ◽  
Author(s):  
J. I. Pankove ◽  
M. Leksono ◽  
S. S. Chang ◽  
C. Walker ◽  
B. Van Zeghbroeck
Keyword(s):  
Activation Energy ◽  
Gallium Nitride ◽  
High Power ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Arrhenius Plot ◽  
Wide Bandgap ◽  
Current Gain ◽  
Energy Gaps ◽  
The Difference

A new heterobipolar transistor was made with the wide bandgap semicon-ductors gallium nitride (GaN) and silicon carbide (SiC). The heterojunction allows high injection efficiency, even at elevated temperatures. A record current gain of ten million was obtained at room temperature, decreasing to 100 at 535°C. An Arrhenius plot of current gain vs 1/T yields an activation energy of 0.43 eV that corresponds to the valence band barrier blocking the escape of holes from the base to the emitter. This activation energy is approximately equal to the difference of energy gaps between emitter and base. This Transistor can operate at high power without cooling. A power density of 30 KW/cm2 was sustained.

On the use of Ozawa/Flynn/Wall method to determine aging activation energy for elastomers

2021 ◽  
pp. 009524432110203
Author(s):  
Sudhir Bafna
Keyword(s):  
Mechanical Properties ◽  
Activation Energy ◽  
Weight Loss ◽  
Oxygen Consumption ◽  
Dwell Time ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Degradation Mechanism ◽  
Kinetics Of ◽  
Wall Method

It is often necessary to assess the effect of aging at room temperature over years/decades for hardware containing elastomeric components such as oring seals or shock isolators. In order to determine this effect, accelerated oven aging at elevated temperatures is pursued. When doing so, it is vital that the degradation mechanism still be representative of that prevalent at room temperature. This places an upper limit on the elevated oven temperature, which in turn, increases the dwell time in the oven. As a result, the oven dwell time can run into months, if not years, something that is not realistically feasible due to resource/schedule constraints in industry. Measuring activation energy (Ea) of elastomer aging by test methods such as tensile strength or elongation, compression set, modulus, oxygen consumption, etc. is expensive and time consuming. Use of kinetics of weight loss by ThermoGravimetric Analysis (TGA) using the Ozawa/Flynn/Wall method per ASTM E1641 is an attractive option (especially due to the availability of commercial instrumentation with software to make the required measurements and calculations) and is widely used. There is no fundamental scientific reason why the kinetics of weight loss at elevated temperatures should correlate to the kinetics of loss of mechanical properties over years/decades at room temperature. Ea obtained by high temperature weight loss is almost always significantly higher than that obtained by measurements of mechanical properties or oxygen consumption over extended periods at much lower temperatures. In this paper, data on five different elastomer types (butyl, nitrile, EPDM, polychloroprene and fluorocarbon) are presented to prove that point. Thus, use of Ea determined by weight loss by TGA tends to give unrealistically high values, which in turn, will lead to incorrectly high predictions of storage life at room temperature.

Effect of titanium alloys elasticity modulus on warping of stamped blanks during cooling

2021 ◽  
pp. 221-227
Author(s):  
M.O. Smirnov ◽  
A.M. Zolotov ◽  
A.M. Tyukhtyaev
Keyword(s):  
Mathematical Modeling ◽  
Titanium Alloys ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Elasticity Modulus ◽  
Preliminary Deformation ◽  
Wide Spread ◽  
Temperature Dependences ◽  
Cumulative Deformation ◽  
The Difference

Wide spread in the values of the elasticity modulus of the titanium VT6 alloy and its analogs Ti—6Al—4V, Ti—6Al—4V ELI at room temperature and at elevated temperatures is revealed аs result of the literature sources analysis. The data are ambiguous, the available temperature dependences of the elasticity modulus have very different values starting from the temperature T l 500 °C. Mathematical modeling of the warping process is carried out on the example of figurine-shaped stamped blank of turbine blade using various dependences of the elasticity modulus on temperature. Cases of warping during cooling of stamped blank after cooling-down in stamp with and without cumulative deformation are considered. The difference in the course of thermal deformations during the cooling of the workpiece is obtained using different temperature dependences of the elasticity modulus. The presence of preliminary deformation increases the warping of the workpieces.

Junction Field Effect Transistors For High-Temperature Or High-Power Electronics

1997 ◽  
Vol 483 ◽  
Author(s):  
J. C. Zolperw
Keyword(s):  
High Temperature ◽  
High Power ◽  
Field Effect ◽  
Elevated Temperatures ◽  
Field Effect Transistors ◽  
Current Gain ◽  
Semiconductor Interface ◽  
Transistor Channel ◽  
Semiconductor Junction ◽  
Junction Field Effect Transistors

AbstractJunction field effect transistors (JFETs) are attractive for high-temperature or highpower operation since they rely on a buried semiconductor junction, and not a metal semiconductor interface as in a metal semiconductor (MESFET) or heterojunction field effect transistor (HFET), for modulating the transistor channel. This is important since a metal/semiconductor interface often degrades at elevated temperatures, either due to the ambient temperature or to Joule heating at high current levels, while a buried semiconductor junction can withstand higher temperatures. In fact, for proper design, the JFET becomes limited by thermal carrier generation in the semiconductor and not metallurgical degradation of the gate electrode.In this talk an overview is given of JFET technology based on GaAs, SiC, and GaN. While impressive room temperature, high-frequency, results have been reported for GaAs JFET's with unit current gain cut-off frequencies up to 50 GHz, more work is needed to limit substrate conduction for optimum operation at 300 °C and above. For SiC JFETs, well behaved transistor operation has been maintained up to 600 °C, however, increased frequency performance is needed. More recently, a GaN JFET has also been demonstrated that is promising for similarly high temperature operation but is presently limited by buffer conduction. Future directions for each of these technologies, and potential extension to high power switching devices such as thyristors, will be presented at the conference.

scholarly journals Ultrahigh thermal conductivity in isotope-enriched cubic boron nitride

Science ◽  
2020 ◽  
Vol 367 (6477) ◽  
pp. 555-559 ◽  
Author(s):  
Ke Chen ◽  
Bai Song ◽  
Navaneetha K. Ravichandran ◽  
Qiye Zheng ◽  
Xi Chen ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Boron Nitride ◽  
Thermal Management ◽  
High Power ◽  
Room Temperature ◽  
Cubic Boron Nitride ◽  
Wide Bandgap ◽  
Boron Isotopes ◽  
Fundamental Interest ◽  
Boron Phosphide

Materials with high thermal conductivity (κ) are of technological importance and fundamental interest. We grew cubic boron nitride (cBN) crystals with controlled abundance of boron isotopes and measured κ greater than 1600 watts per meter-kelvin at room temperature in samples with enriched 10B or 11B. In comparison, we found that the isotope enhancement of κ is considerably lower for boron phosphide and boron arsenide as the identical isotopic mass disorder becomes increasingly invisible to phonons. The ultrahigh κ in conjunction with its wide bandgap (6.2 electron volts) makes cBN a promising material for microelectronics thermal management, high-power electronics, and optoelectronics applications.

scholarly journals The Internal Friction of Single Crystals, Bicrystals and Polycrystals of Pure Magnesium

2015 ◽  
Vol 60 (1) ◽  
pp. 371-375 ◽  
Author(s):  
W.B. Jiang ◽  
Q.P. Kong ◽  
L.B. Magalas ◽  
Q.F. Fang
Keyword(s):  
Activation Energy ◽  
Internal Friction ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Single Crystals ◽  
Room Temperature ◽  
Internal Friction Peak ◽  
Self Diffusion ◽  
Boundary Relaxation ◽  
The Difference

Abstract The internal friction of magnesium single crystals, bicrystals and polycrystals has been studied between room temperature and 450°C. There is no internal friction peak in the single crystals, but a prominent relaxation peak appears at around 160°C in polycrystals. The activation energy of the peak is 1.0 eV, which is consistent with the grain boundary self-diffusion energy of Mg. Therefore, the peak in polycrystals can be attributed to grain boundary relaxation. For the three studied bicrystals, the grain boundary peak temperatures and activation energies are higher than that of polycrystals, while the peak heights are much lower. The difference between the internal friction peaks in bicrystals and polycrystals is possibly caused by the difference in the concentrations of segregated impurities in grain boundaries.

THE REACTION OF CYCLOPENTANE VAPOR WITH Hg 6(3P1) ATOMS AT ELEVATED TEMPERATURES: THE RECOMBINATION, DISPROPORTIONATION, AND DECOMPOSITION OF CYCLOPENTYL RADICALS

1964 ◽  
Vol 42 (2) ◽  
pp. 357-370 ◽  
Author(s):  
Harry E. Gunning ◽  
Richard L. Stock
Keyword(s):  
Activation Energy ◽  
Thermal Decomposition ◽  
Elevated Temperatures ◽  
Arrhenius Plot ◽  
New Products ◽  
Reaction Vessel ◽  
Rate Data ◽  
Kcal Mole ◽  
Low Light ◽  
Ethylene Propylene

The static reaction of Hg 6(3P1) atoms with cyclopentane vapor (c-C5H10) has been studied with temperatures from 26 to 376°, at constant c-C5H10 concentration and at low light intensities.From 26 to 250°, the only important products are hydrogen, cyclopentene, and bicyclopentyl. Above 250° new products appearing are ethylene, biallyl, and allyl cyclopentane, together with smaller yields of propylene, ethane, propane, and methane. To 250°, the reaction can be explained in terms of a 5-step paraffinic sequence, involving initial C—H scission to form H atoms and cyclopentyl (c-C5H9) radicals. The Arrhenius plot of a function equal to kdisp/kcomb for c-C5H9 radicals showed that Edisp−Ecomb = 0. Above 250° c-C5H9 radicals decompose into C2H4 and C3H5 radicals. The activation energy for this process was determined from a number of product functions to be 36.9 ± 1.2 kcal/mole. Evidence was also found for scission of c-C5H9 into cyclopentene and H atoms, above ca. 300°.A brief examination was also made of the thermal decomposition of c-C5H10 up to 457° in a quartz reaction vessel. The substrate is unstable above 350° forming ethylene, propylene, cyclopentene, cyclopentadiene, and hydrogen. The rate data can be satisfactorily explained by two intramolecular decompositions of the substrate into (a) ethylene and propylene and (b) cyclopentene and hydrogen with the cyclopentene further dehydrogenating to cyclopentadiene. From the data Ea = 49.6 ± 2.0 kcal/mole and Eb = 44.0 ± 2.0 kcal/mole.

Investigations of Oxidation Dependence on Type of Porous Silicon Near Room Temperature by Isothermal Microcalorimeter

1997 ◽  
Vol 485 ◽  
Author(s):  
J. Salonen ◽  
V-P. Lehto ◽  
E. Laine
Keyword(s):  
Activation Energy ◽  
Porous Silicon ◽  
Room Temperature ◽  
Activity Monitoring ◽  
Thermal Activity ◽  
Autocatalytic Reactions ◽  
The Difference ◽  
P Type ◽  
Isothermal Microcalorimeter

AbstractOxidation of porous silicon has been studied using thermal activity monitoring, i.e. isothermal microcalorimeter. It was found that, at room temperature (25 °C) the micro-calorimetric signal from the oxidation of the p+-type porous silicon (PS) reduces exponentially, while in the case of n-type PS, the signal starts to increase slowly, reaching its highest value after some hours. This kind of behaviour is typical of autocatalytic reactions. To clarify the origin of the difference, we varied the preparation parameters of the porous silicon. We determined the activation energy from the measurements near the room temperature (25–70 °C). The results of this research have been compared with the previous observations and the possible origin of the difference has been discussed.

9 kV 4H-SiC IGBTs with 88 mΩ·cm2 of R diff, on

2007 ◽  
Vol 556-557 ◽  
pp. 771-774 ◽  
Author(s):  
Qing Chun Jon Zhang ◽  
Charlotte Jonas ◽  
Bradley Heath ◽  
Mrinal K. Das ◽  
Sei Hyung Ryu ◽  
...  
Keyword(s):  
High Temperature ◽  
Threshold Voltage ◽  
High Power ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Gate Bias ◽  
Channel Mobility ◽  
Fast Switching ◽  
Blocking Voltage ◽  
First Time

SiC IGBTs are suitable for high power, high temperature applications. For the first time, the design and fabrication of 9 kV planar p-IGBTs on 4H-SiC are reported in this paper. A differential on-resistance of ~ 88 m(cm2 at a gate bias of –20 V is achieved at 25°C, and decreases to ~24.8 m(cm2 at 200°C. The device exhibits a blocking voltage of 9 kV with a leakage current density of 0.1 mA/cm2. The hole channel mobility is 6.5 cm2/V-s at room temperature with a threshold voltage of –6.5 V resulting in enhanced conduction capability. Inductive switching tests have shown that IGBTs feature fast switching capability at both room and elevated temperatures.

High temperature creep of SiC densified using a transient liquid phase

1991 ◽  
Vol 6 (9) ◽  
pp. 1945-1949 ◽  
Author(s):  
Zuei C. Jou ◽  
Anil V. Virkar ◽  
Raymond A. Cutler
Keyword(s):  
Activation Energy ◽  
Silicon Carbide ◽  
Liquid Phase ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Transient Liquid Phase ◽  
High Strength ◽  
High Temperature Creep ◽  
Fine Grained ◽  
Thermally Activated

Silicon carbide-based ceramics can be rapidly densified above approximately 1850 °C due to a transient liquid phase resulting from the reaction between alumina and aluminum oxycarbides. The resulting ceramics are fine-grained, dense, and exhibit high strength at room temperature. SiC hot pressed at 1875 °C for 10 min in Ar was subjected to creep deformation in bending at elevated temperatures between 1500 and 1650 °C in Ar. Creep was thermally activated with an activation energy of 743 kJ/mol. Creep rates at 1575 °C were between 10−9/s and 10−7/s at an applied stress between 38 and 200 MPa, respectively, resulting in a stress exponent of ≍1.7.

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