scholarly journals FINAL ANALYSIS: Characterisation of Catalysts Using Secondary and Backscattered Electron In-lens Detectors

2014 ◽  
Vol 58 (2) ◽  
pp. 106-110 ◽  
Author(s):  
WINSON C. H. KUO ◽  
MARTHA BRICENO ◽  
DOGAN OZKAYA
Keyword(s):  
Final Analysis ◽  
Backscattered Electron

Development of 200 kV Scanning-Transmission Electron Microscope

1974 ◽  
Vol 32 ◽  
pp. 410-411
Author(s):  
H. Koike ◽  
S. Sakurai ◽  
K. Ueno ◽  
M. Watanabe
Keyword(s):  
Electron Microscopy ◽  
Electron Microscope ◽  
Scanning Transmission Electron Microscope ◽  
The Other ◽  
Morphological Observation ◽  
Magnetic Domains ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Backscattered Electron ◽  
Increasing Demand

In recent years, there has been increasing demand for higher voltage SEMs, in the field of surface observation, especially that of magnetic domains, dislocations, and electron channeling patterns by backscattered electron microscopy. On the other hand, the resolution of the CTEM has now reached 1 ∼ 2Å, and several reports have recently been made on the observation of atom images, indicating that the ultimate goal of morphological observation has beem nearly achieved.

Remarks on the application of backscattered electron imaging (BEI) to the scanning electron microscopy (SEM) of biological structures

1983 ◽  
Vol 41 ◽  
pp. 484-487
Author(s):  
Etienne de Harven
Keyword(s):  
High Resolution ◽  
Incident Beam ◽  
Spot Size ◽  
Primary Electron ◽  
Critical Point Drying ◽  
Cell Shapes ◽  
High Resolution Images ◽  
Backscattered Electron ◽  
Electron Imaging ◽  
Scanning Electron

Biological ultrastructures have been extensively studied with the scanning electron microscope (SEM) for the past 12 years mainly because this instrument offers accurate and reproducible high resolution images of cell shapes, provided the cells are dried in ways which will spare them the damage which would be caused by air drying. This can be achieved by several techniques among which the critical point drying technique of T. Anderson has been, by far, the most reproducibly successful. Many biologists, however, have been interpreting SEM micrographs in terms of an exclusive secondary electron imaging (SEI) process in which the resolution is primarily limited by the spot size of the primary incident beam. in fact, this is not the case since it appears that high resolution, even on uncoated samples, is probably compromised by the emission of secondary electrons of much more complex origin.When an incident primary electron beam interacts with the surface of most biological samples, a large percentage of the electrons penetrate below the surface of the exposed cells.

Backscattered Electron Imaging of GaAs/AlGaAs Super Lattice Structures with an Ultra-High- Resolution SEM

1988 ◽  
Vol 46 ◽  
pp. 204-205
Author(s):  
Kazumichi Ogura ◽  
Michael M. Kersker
Keyword(s):  
High Resolution ◽  
Layer Structure ◽  
High Sensitivity ◽  
Beam Current ◽  
Electron Beam Current ◽  
Lattice Structures ◽  
Super Lattice ◽  
Different Types ◽  
Backscattered Electron ◽  
Electron Imaging

Backscattered electron (BE) images of GaAs/AlGaAs super lattice structures were observed with an ultra high resolution (UHR) SEM JSM-890 with an ultra high sensitivity BE detector. Three different types of super lattice structures of GaAs/AlGaAs were examined. Each GaAs/AlGaAs wafer was cleaved by a razor after it was heated for approximately 1 minute and its crosssectional plane was observed.First, a multi-layer structure of GaAs (100nm)/AlGaAs (lOOnm) where A1 content was successively changed from 0.4 to 0.03 was observed. Figures 1 (a) and (b) are BE images taken at an accelerating voltage of 15kV with an electron beam current of 20pA. Figure 1 (c) is a sketch of this multi-layer structure corresponding to the BE images. The various layers are clearly observed. The differences in A1 content between A1 0.35 Ga 0.65 As, A1 0.4 Ga 0.6 As, and A1 0.31 Ga 0.69 As were clearly observed in the contrast of the BE image.

Thickness and composition determinations from T.E.M. specimens using both x-ray and backscattered electron data

1984 ◽  
Vol 42 ◽  
pp. 576-577
Author(s):  
M.D. Ball ◽  
H. Lagace ◽  
M.C. Thornton
Keyword(s):  
Electron Microscope ◽  
Atomic Number ◽  
Transmission Electron Microscope ◽  
Convenient Method ◽  
Flow Chart ◽  
X Ray ◽  
Intensity Measurements ◽  
Transmission Electron ◽  
Electron Intensity ◽  
Backscattered Electron

The backscattered electron coefficient η for transmission electron microscope specimens depends on both the atomic number Z and the thickness t. Hence for specimens of known atomic number, the thickness can be determined from backscattered electron coefficient measurements. This work describes a simple and convenient method of estimating the thickness and the corrected composition of areas of uncertain atomic number by combining x-ray microanalysis and backscattered electron intensity measurements.The method is best described in terms of the flow chart shown In Figure 1. Having selected a feature of interest, x-ray microanalysis data is recorded and used to estimate the composition. At this stage thickness corrections for absorption and fluorescence are not performed.

Contrast in Scanning Images of Thin Crystals

1972 ◽  
Vol 30 ◽  
pp. 520-521
Author(s):  
S. Kimoto ◽  
H. Hashimoto ◽  
S. Takashima ◽  
R. M. Stern ◽  
T. Ichinokawa
Keyword(s):  
Crystal Surface ◽  
Solid Angle ◽  
Incident Angle ◽  
Intensity Variation ◽  
Lattice Defects ◽  
Scanning Microscope ◽  
Electron Detector ◽  
Backscattered Electrons ◽  
Electron Image ◽  
Backscattered Electron

The most well known application of the scanning microscope to the crystals is known as Coates pattern. The contrast of this image depends on the variation of the incident angle of the beam to the crystal surface. The defect in the crystal surface causes to make contrast in normal scanning image with constant incident angle. The intensity variation of the backscattered electrons in the scanning microscopy was calculated for the defect in the crystals by Clarke and Howie. Clarke also observed the defect using a scanning microscope.This paper reports the observation of lattice defects appears in thin crystals through backscattered, secondary and transmitted electron image. As a backscattered electron detector, a p-n junction detector of 0.9 π solid angle has been prepared for JSM-50A. The gain of the detector itself is 1.2 x 104 at 50 kV and the gain of additional AC amplifier using band width 100 Hz ∼ 10 kHz is 106.

Chemical Classification and Particle Sizing of Foundry Sands

1985 ◽  
Vol 43 ◽  
pp. 388-389
Author(s):  
D.S. DeMiglio
Keyword(s):  
Image Analysis ◽  
Energy Dispersive Spectrometer ◽  
Image Analysis System ◽  
Representative Sampling ◽  
Foundry Sands ◽  
Large Atomic Number ◽  
Backscattered Electron ◽  
Sand Particles ◽  
Analysis System ◽  
Reclamation System

Much progress has been made in recent years towards the development of closed-loop foundry sand reclamation systems. However, virtually all work to date has determined the effectiveness of these systems to remove surface clay and metal oxide scales by a qualitative inspection of a representative sampling of sand particles. In this investigation, particles from a series of foundry sands were sized and chemically classified by a Lemont image analysis system (which was interfaced with an SEM and an X-ray energy dispersive spectrometer) in order to statistically document the effectiveness of a reclamation system developed by The Pangborn Company - a subsidiary of SOHIO.The following samples were submitted: unreclaimed sand; calcined sand; calcined & mechanically scrubbed sand and unused sand. Prior to analysis, each sample was sprinkled onto a carbon mount and coated with an evaporated film of carbon. A backscattered electron photomicrograph of a field of scale-covered particles is shown in Figure 1. Due to a large atomic number difference between sand particles and the carbon mount, the backscattered electron signal was used for image analysis since it had a uniform contrast over the shape of each particle.

Improvements on the gaseous detector device

1986 ◽  
Vol 44 ◽  
pp. 630-631 ◽  
Author(s):  
G.D. Danilatos
Keyword(s):  
Gaseous Medium ◽  
The Other ◽  
Beam Specimen ◽  
Thin Wires ◽  
Interference Noise ◽  
Backscattered Electron ◽  
Detection Of Signals ◽  
Environmental Sem

The possibility of placing the specimen in a gaseous medium in the environmental SEM (ESEM) has created novel ways for detection of signals from the beam-specimen interactions. It was originally reported by Oanilatos that the ionization produced by certain signals inside the conditioning medium can be used to produce images. The aim of this report is to demonstrate some of the improvements on the system that have occurred thereafter.Two straight thin wires are aligned horizontally along a direction normal to the direction of the two scintillator backscattered electron (BSE) detectors reported elsewhere. The free end tips of the wires are about 5 mm apart halfway between the specimen and the pressure limiting aperture (specimen distance = 1.5 mm). The other end of each wire makes contact with the input of a separate preamplifier, two of which are built inside a shielding aluminum stub. With such a design, interference noise from the input cables is avoided.

The measurement of thin-film reaction layers with high-resolution FESEM

1995 ◽  
Vol 53 ◽  
pp. 330-331
Author(s):  
Paul G. Kotula ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
High Resolution ◽  
Reaction Layer ◽  
Product Layer ◽  
Buffer Layers ◽  
Oxide Superconductors ◽  
Rate Limiting Step ◽  
Ceramic Thin Film ◽  
Backscattered Electron ◽  
Boundary Reaction

Thin-film reactions in ceramic systems are of increasing importance as materials such as oxide superconductors and ferroelectrics are applied in thin-film form. In fact, reactions have been found to occur during the growth of YBa2Cu3O6+x on ZrO2. Additionally, thin-film reactions have also been intentionally initiated for the production of buffer layers for the subsequent growth of high-Tc superconductor thin films. The problem is that the kinetics of ceramic thin-film reactions are not well understood when the reaction layer is very thin; that is, when the rate-limiting step is a phase-boundary reaction as opposed to diffusion of the reactants through the product layer. In this case, the reaction layer is likely to be laterally non-uniform. In the present study, the measurement of thin reaction-product layers is accomplished by first digitally acquiring backscattered-electron images in a high-resolution field-emission scanning electron microscope (FESEM) followed by image analysis. Furthermore, the problem of measuring such small thicknesses (e.g., 20-500nm) over lengths of interfaces longer than 3mm is addressed.

Preparation And elemental analysis of ancient fibers

1987 ◽  
Vol 45 ◽  
pp. 410-411
Author(s):  
Allen Angel ◽  
Kathryn A. Jakes
Keyword(s):  
Cross Sections ◽  
Physical Structure ◽  
Energy Dispersive ◽  
Archaeological Sites ◽  
X Ray ◽  
Long Term Storage ◽  
Backscattered Electron ◽  
Electron Imaging

Fabrics recovered from archaeological sites often are so badly degraded that fiber identification based on physical morphology is difficult. Although diagenetic changes may be viewed as destructive to factors necessary for the discernment of fiber information, changes occurring during any stage of a fiber's lifetime leave a record within the fiber's chemical and physical structure. These alterations may offer valuable clues to understanding the conditions of the fiber's growth, fiber preparation and fabric processing technology and conditions of burial or long term storage (1).Energy dispersive spectrometry has been reported to be suitable for determination of mordant treatment on historic fibers (2,3) and has been used to characterize metal wrapping of combination yarns (4,5). In this study, a technique is developed which provides fractured cross sections of fibers for x-ray analysis and elemental mapping. In addition, backscattered electron imaging (BSI) and energy dispersive x-ray microanalysis (EDS) are utilized to correlate elements to their distribution in fibers.

A correlation of CL emissions from Penrith sandstone with elemental distributions obtained by simultaneous SEM-CL and EDS analysis

1995 ◽  
Vol 53 ◽  
pp. 392-393
Author(s):  
Paul J. Wright
Keyword(s):  
Optical Microscope ◽  
Electron Gun ◽  
High Electron ◽  
Collection System ◽  
Electron Hole ◽  
Depositional Processes ◽  
Eds Analysis ◽  
Distribution Mapping ◽  
Backscattered Electron ◽  
Electron Imaging

Most industrial and academic geologists are familiar with the beautiful red and orange cathodoluminescence colours produced by carbonate minerals in an optical microscope with a cold cathode electron gun attached. The cement stratigraphies interpreted from colour photographs have been widely used to determine the post depositional processes which have modified sedimentary rock textures.However to study quartzose materials high electron densities and kV's are necessary to stimulate sufficient emission. A scanning electron microscope with an optical collection system and monochromator provides an adequate tool and gives the advantage of providing secondary and backscattered electron imaging as well as elemental analysis and distribution mapping via standard EDS/WDS facilities.It has been known that the incorporation of many elements modify the characteristics of the CL emissions from geological materials. They do this by taking up positions between the valence and conduction band thus providing sites to assist in the recombination of electron hole pairs.

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