ALGORITHMS FOR MODELING PROCESS SPENDING AND REPLENISHMENT OF RESOURCE GROUPING TECHNOLOGY

2019 ◽  
pp. 61-70 ◽  
Author(s):  
I. Tolok ◽  
Ye. Lienkov
Keyword(s):  
Random Access ◽  
Iteration Process ◽  
Access Memory ◽  
Specific Group ◽  
Equipment And Supplies ◽  
Military Equipment ◽  
Modeling Process ◽  
User Groups ◽  
Personal Computer User ◽  
Range Of Variation

This article explores the basic initial steps for constructing an enlarged structural diagram of an algorithm for modeling the processes of spending and replenishing resource of a grouping military objects in normative planning mode. The organizations responsible for operating the groupings have an important task of timely planning for repair of weapons and military equipment (WME) and military equipment and supplies to the grouping of new objects. Obviously, solution of such a problem is possible only on the basis of applying a mathematical model process of expenditure and replenishment of resource (PERR) of grouping objects, with which you can predict the composition and resource of the grouping, and taking into account the forecast obtained, find (calculate) optimal plans for replenishing its resource. The article shows the results of studies various groups in terms of elucidating patterns of the occurrence of PERR in them. To do this, using the model, various grouping options can be generated with the specified characteristics, as well as calculating the optimal plans for replenishing resource for a specific group of military equipment (user groups), save these plans in a database, and then make refinement calculations taking into account current changes in grouping. It is assumed that by the time this algorithm is launched, all the necessary data structures have already been created in random access memory of the personal computer, user has already selected an implementation option for the grouping for which simulation is performed. Also, the number of implementations of modeling process and coefficient specifying range of variation limit on the consumption of resource objects (in percent) are given. In each iteration, process of PERR objects the i-th type is simulated at a given forecast interval

NORMATIVE PLANNING PROCESSES OF CONSUMPTION AND REPLENISHMENT RESOURCES OF GROUPING WITH DELIVERY NEW OBJECTS

2019 ◽  
pp. 13-20
Author(s):  
Ye.S. Lienkov
Keyword(s):  
Block Diagram ◽  
Single Case ◽  
Initial Information ◽  
Equipment And Supplies ◽  
Military Equipment ◽  
Modeling Process ◽  
Planning Processes ◽  
Previous Algorithm ◽  
Case Simulation ◽  
Modeling Algorithm

The article describes the features and results of normative planning processes of spending and replenishing the grouping resource with the supply of new objects. The troops have an important task of timely planning for the repair of weapons and military equipment and supplies to the grouping of new objects. It is shown that the solution to this problem is possible only through the use of a mathematical model process of spending and replenishing the technical resource of grouping objects. Using it, you can predict the composition and resource of the group and calculate the optimal plans for maintaining the combat readiness of the group. The launch of the presented algorithm involves the use of a previously developed enlarged structural diagram of a modeling algorithm. The number of implementations of the modeling process and a certain coefficient that sets the range of the limit on the consumption of the resource of objects in percent are set. The block diagram of the modeling algorithm in the standard planning mode plus the supply of new facilities is presented. It is essentially an extension of the previous algorithm. The initial information, as before, is GR and TipO data structures. The required (minimum acceptable) number of objects in the grouping is added to them. The results are shown for two calculation options: for a single case simulation implementation and for 100 implementations. This allows us to compare the obtained data and qualitatively assess nature of the effect on the type of graphs numbers of simulation implementations. The block diagram of the algorithm for modeling the process of spending and replenishing a resource in the User Planning mode without supplying new objects is presented. The form for displaying simulation results (graphs) in the User Planning mode is no different from the form for presenting the results obtained in the Normative Planning modes. Showing examples of the presentation of these results.

Analysis of FSRAM Single Bit Failures Due to Unique Dislocations

1998 ◽  
Author(s):  
Phil Schani ◽  
S. Subramanian ◽  
Vince Soorholtz ◽  
Pat Liston ◽  
Jamey Moss ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Random Access ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Temperature Sensitive ◽  
Wafer Level ◽  
Top Down ◽  
Access Memory ◽  
Transmission Electron ◽  
Contact Processing

Abstract Temperature sensitive single bit failures at wafer level testing on 0.4µm Fast Static Random Access Memory (FSRAM) devices are analyzed. Top down deprocessing and planar Transmission Electron Microscopy (TEM) analyses show a unique dislocation in the substrate to be the cause of these failures. The dislocation always occurs at the exact same location within the bitcell layout with respect to the single bit failing data state. The dislocation is believed to be associated with buried contact processing used in this type of bitcell layout.

Deprocessing Methodologies for Detection of IBC and Cell-to-Cell Shorts in Submicron DRAM

2012 ◽  
Author(s):  
Ramachandra Chitakudige ◽  
Sarat Kumar Dash ◽  
A.M. Khan
Keyword(s):  
High Selectivity ◽  
Electron Cyclotron Resonance ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Plasma System ◽  
Poly Silicon ◽  
Hazardous Gases ◽  
Wet Etch ◽  
Resonance Plasma

Abstract Detection of both Insufficient Buried Contact (IBC) and cell-to-cell short defects is quite a challenging task for failure analysis in submicron Dynamic Random Access Memory (DRAM) devices. A combination of a well-controlled wet etch and high selectivity poly silicon etch is a key requirement in the deprocessing of DRAM for detection of these types of failures. High selectivity poly silicon etch methods have been reported using complicated system such as ECR (Electron Cyclotron Resonance) Plasma system. The fact that these systems use hazardous gases like Cl2, HBr, and SF6 motivates the search for safer alternative deprocessing chemistries. The present work describes high selectivity poly silicon etch using simple Reactive Ion Etch (RIE) plasma system using less hazardous gases such as CF4, O2 etc. A combination of controlled wet etch and high selectivity poly silicon etch have been used to detect both IBC and cell-to-cell shorts in submicron DRAMs.

Challenges and Benefits of Product-Like SRAM in Technology Development

2011 ◽  
Author(s):  
Felix Beaudoin ◽  
Stephen Lucarini ◽  
Fred Towler ◽  
Stephen Wu ◽  
Zhigang Song ◽  
...  
Keyword(s):  
Technology Development ◽  
Random Access ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Development Phase ◽  
High Complexity ◽  
Access Memory ◽  
Integration Schemes ◽  
Front End

Abstract For SRAMs with high logic complexity, hard defects, design debug, and soft defects have to be tackled all at once early on in the technology development while innovative integration schemes in front-end of the line are being validated. This paper presents a case study of a high-complexity static random access memory (SRAM) used during a 32nm technology development phase. The case study addresses several novel and unrelated fail mechanisms on a product-like SRAM. Corrective actions were put in place for several process levels in the back-end of the line, the middle of the line, and the front-end of the line. These process changes were successfully verified by demonstrating a significant reduction of the Vmax and Vmin nest array block fallout, thus allowing the broader development team to continue improving random defectivity.

Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Conductive Filament ◽  
Filament Temperature

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

scholarly journals All-inorganic perovskite quantum dot light-emitting memories

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Meng-Cheng Yen ◽  
Chia-Jung Lee ◽  
Kang-Hsiang Liu ◽  
Yi Peng ◽  
Junfu Leng ◽  
...  
Keyword(s):  
Random Access ◽  
Optoelectronic Device ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Light Emitting ◽  
Inorganic Perovskite ◽  
Emission Color ◽  
Perovskite Quantum Dots ◽  
In Series ◽  
First Time

AbstractField-induced ionic motions in all-inorganic CsPbBr3 perovskite quantum dots (QDs) strongly dictate not only their electro-optical characteristics but also the ultimate optoelectronic device performance. Here, we show that the functionality of a single Ag/CsPbBr3/ITO device can be actively switched on a sub-millisecond scale from a resistive random-access memory (RRAM) to a light-emitting electrochemical cell (LEC), or vice versa, by simply modulating its bias polarity. We then realize for the first time a fast, all-perovskite light-emitting memory (LEM) operating at 5 kHz by pairing such two identical devices in series, in which one functions as an RRAM to electrically read the encoded data while the other simultaneously as an LEC for a parallel, non-contact optical reading. We further show that the digital status of the LEM can be perceived in real time from its emission color. Our work opens up a completely new horizon for more advanced all-inorganic perovskite optoelectronic technologies.

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